IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon
MPN: IPD90N04S403ATMA1 ✓ فعالIPD90N04S403ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. The OptiMOS-T2 family sits within the broader hierarchy: MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Optimised trench MOSFET structures reduce R_DS(on) per unit silicon area, which directly lowers conduction losses and shrinks the PCB footprint required for a given current rating.
Key features of the IPD90N04S403ATMA1 include 3.2 mOhm typical R_DS(on) at V_GS = 10 V, AEC-Q101 automotive qualification, MSL1 rating allowing peak reflow up to 260 degC, 100% avalanche-tested die, and an operating junction temperature up to 175 degC. The PG-TO252-3-313 (DPAK) package provides a low thermal-resistance path through the tab and a small board footprint compatible with high-volume SMT assembly.
The trench cell architecture of OptiMOS-T2 reduces gate charge (Qg) and output capacitance (Coss), which lowers switching losses at high PWM frequencies. Combined with the 3.2 mOhm R_DS(on), this allows cooler operation, smaller heatsinks, and higher system efficiency compared with older planar MOSFET generations at similar current ratings.
Typical applications include automotive 12 V brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, solenoid drivers, and 24 V industrial switching. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics subject to extended temperature and vibration stress.
Designers should note that for high-side switching above 10 kHz, a gate driver with sufficient sink/source current is required to charge and discharge the MOSFET's input capacitance quickly. Place the gate resistor close to the IC pin and use a Kelvin source connection where the layout permits to minimise switching-loop inductance.
This page synthesises distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes that go beyond what is published in the Infineon datasheet alone, giving engineers a single reference for sourcing and design-in decisions.
کے لیے ڈراپ اِن متبادل IPD90N04S403ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD90N04S403ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف MSL Level, Technology, Package, RoHS Status, Avalanche Tested.
IPD90N06S404ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC90N04S5L3R3ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD78CN10NGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD046N08N5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC097N06NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD90N04S403ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 90 A |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W |
| پیکیج | PG-TO252-3-313 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| MSL لیول | MSL1 (peak reflow up to 260C) |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Tested | 100% avalanche-tested |
| RoHS Compliance | Compliant (Green Package) |
| Technology | Trench MOSFET (OptiMOS-T2) |
IPD90N04S403ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate control input; drive with 10V for full enhancement |
| پن 2 | Drain — Drain terminal; electrically connected to the metal tab on the package back |
| پن 3 | Source — Source terminal; Kelvin connection recommended for high-frequency switching |
عام استعمالات
IPD90N04S403ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive 12V BLDC Motor Drive, Electronic Power Steering (EPS), Automotive Water/Oil Pump Driver, 24V Industrial Solenoid/Valve Driver, DC-DC Buck Converter High-Side Switch, Battery Protection / Load Switch.
Automotive 12V BLDC Motor Drive
The IPD90N04S403ATMA1's 40 V V_DS, 90 A continuous drain current, and 3.2 mOhm typical R_DS(on) at V_GS = 10 V make it a strong fit for 12 V brushless DC (BLDC) motor half-bridge stages. At a typical 30 A RMS phase current, conduction loss is roughly 2.9 W per MOSFET, allowing operation without a heatsink at moderate ambient temperatures. AEC-Q101 qualification and MSL1 rating up to 260C peak reflow support high-reliability automotive assembly.
تجویز کردہ
Electronic Power Steering (EPS)
Electric power steering requires MOSFETs that can switch 30-80 A at 12 V with high reliability and low heat. The IPD90N04S403ATMA1's 3.2 mOhm R_DS(on) minimises I^2R losses during peak torque assist, while its AEC-Q101 qualification and 175C max junction temperature support under-hood placement. The DPAK package footprint allows direct PCB drop-in and efficient heat transfer to chassis-mounted copper pours.
تجویز کردہ
Automotive Water/Oil Pump Driver
Coolant and oil pumps in modern vehicles run continuously and demand MOSFETs with low conduction loss and proven automotive reliability. The IPD90N04S403ATMA1 delivers 3.2 mOhm R_DS(on) at 10 V V_GS, which keeps junction temperature rise low at 20-40 A continuous load. Its 100% avalanche-tested die and MSL1 rating simplify robust design for harsh under-hood environments.
تجویز کردہ
24V Industrial Solenoid/Valve Driver
Industrial 24 V solenoid and proportional valve drivers need 40 V-rated MOSFETs to handle inductive flyback. The IPD90N04S403ATMA1's 100% avalanche rating and 3.2 mOhm R_DS(on) allow safe unclamped switching of inductive loads. Its DPAK package is footprint-compatible with industry-standard 3-pin DPAK layouts, easing retrofit and design reuse across industrial platforms.
تجویز کردہ
DC-DC Buck Converter High-Side Switch
In 12 V to 3.3 V/5 V synchronous buck converters, the IPD90N04S403ATMA1 can serve as the high-side switch in non-isolated POL stages delivering up to 90 A. Its trench OptiMOS-T2 technology provides low gate charge and fast switching, reducing transition losses at 100-500 kHz. The 40 V rating gives ample margin for 12 V automotive transients including load dump.
تجویز کردہ
Battery Protection / Load Switch
As a low-side load disconnect switch in 12 V battery management, the IPD90N04S403ATMA1's 3.2 mOhm R_DS(on) adds only ~0.3 V drop at 90 A, well within typical system tolerances. Its 175C max junction temperature and automotive-grade reliability make it suitable for under-hood battery management units (BMUs) and e-fuse implementations.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD90N04S403ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD90N06S404ATMA2 | IPC90N04S5L3R3ATMA1 | IPD78CN10NGATMA1 | IPD046N08N5ATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| V_DS Max | 40 V | 60 V | 40 V | 100 V | 80 V | 60 V |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T5 | OptiMOS | OptiMOS-N5 | OptiMOS-N3 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
اہم امتیازی خصوصیات
- Lowest R_DS(on) in 40 V DPAK automotive-grade OptiMOS family (بمقابلہBSC097N06NSATMA1)
- Newer OptiMOS-T5 generation available with same footprint (بمقابلہIPC90N04S5L3R3ATMA1)
- 40 V rating optimised for 12V/24V automotive systems (بمقابلہIPD90N06S404ATMA2)
ڈیزائن نوٹس
Estimated: At I_D = 30 A continuous, V_GS = 10 V, and R_DS(on) = 3.2 mOhm, conduction loss is approximately 2.88 W. The DPAK package on a 1 sq-inch copper pad has a typical theta_JA of ~50 C/W, yielding a junction temperature rise of ~144C above ambient - meaning ambient must be kept below ~31C for 175C max junction. At lower currents (10 A), losses drop to ~0.32 W and a much smaller copper pad is adequate.
Place the gate drive resistor (typ. 10-100 ohm) as close as possible to the gate pin to dampen parasitic oscillations caused by the gate-source inductance and MOSFET input capacitance. Use a Kelvin source connection when the layout permits - route the source sense return directly to the source pin rather than sharing the high-current source path to minimise gate-drive voltage bounce during fast switching transitions.
Do not exceed V_GS = +/-20 V absolute maximum; gate oxide damage is permanent. For avalanche-energy scenarios (unclamped inductive switching), calculate E_AS using 0.5 x L x I_PK^2 and verify against the datasheet single-pulse avalanche rating. Always include a TVS diode or snubber across inductive loads exceeding the rated E_AS to prevent catastrophic failure.
تعمیل کی معلومات
AEC-Q101 (automotive, not AEC-Q100) qualified per Infineon datasheet. Green Package (RoHS compliant). MSL1 rated up to 260C peak reflow. 100% avalanche-tested die.
