IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon
MPN: IPG20N10S4L35ATMA1 ✓ فعالIPG20N10S4L35ATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals. Dual N-channel MOSFET arrays belong to the broader category of discrete power semiconductors within power management and motor/relay driver subsystems. Logic-level gate drive (V<sub>GS(th)</sub> ≈1-2 V) allows direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting, while OptiMOS™ technology reduces gate charge (Q<sub>G</sub>) and switching losses versus earlier planar generations.
Key features include 100 V drain-to-source rating, 35 mΩ maximum on-resistance at V<sub>GS</sub>=10 V and I<sub>D</sub>=17 A, logic-level gate threshold, and AEC-Q101 automotive qualification with 175°C operating temperature. The PG-TDSON-8-4 package exposes a large metal pad for low thermal resistance (≈1 K/W on a 1 in² 1 oz copper pour) and supports MSL1 to 260°C peak reflow. 100% avalanche-rated devices survive unclamped inductive switching events common in relay and solenoid drive applications.
Typical applications include automotive LED lighting drivers, H-bridge motor half-bridges, DC-DC converter synchronous rectifiers, and high-side/low-side load switches in 12 V/24 V automotive systems. The dual-channel arrangement suits full-bridge configurations where two MOSFETs switch in complementary fashion across a load.
When designing with this device, ensure the gate drive voltage reaches at least 4.5 V for full enhancement and adequate R<sub>DS(on)</sub>. Place gate-series resistors in the 10-100 Ω range to damp ringing, and route the switching node (half-bridge midpoint) away from sensitive analog traces to minimize EMI coupling.
کے لیے ڈراپ اِن متبادل IPG20N10S4L35ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPG20N10S4L35ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف FET Type, MSL Level, Technology, Package, Operating Temperature Range.
IPG20N10S4L-35
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPG20N06S2L65AATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPG20N04S408ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPG20N04S4L11ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC027N06LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPG20N10S4L35ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Power Dissipation (P<sub>D</sub>) | 43 W |
| آپریٹنگ درجہ حرارت | 175°C max junction |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پیکیج / کیس | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | AEC-Q101 |
| MSL لیول | MSL1 (up to 260°C peak reflow) |
| Series | OptiMOS™, Automotive |
| RoHS اسٹیٹس | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested |
IPG20N10S4L35ATMA1 پن کنفیگریشن
| پن 1 | Source 1 (S1) — Source of MOSFET 1 |
| پن 2 | Gate 1 (G1) — Gate of MOSFET 1 (logic-level) |
| پن 3 | Source 2 (S2) — Source of MOSFET 2 |
| پن 4 | Gate 2 (G2) — Gate of MOSFET 2 (logic-level) |
| پن 5-7 | NC / Drain — Connected internally to drain and exposed pad |
| پن 8 | Drain (D) — Common drain for both MOSFETs (also thermal pad) |
محفوظ آپریٹنگ ایریا
عام استعمالات
IPG20N10S4L35ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive LED Lighting Driver, H-Bridge Motor Half-Bridge, Synchronous Rectifier in DC-DC Converters, Solenoid and Relay Driver, Battery Management Protection Switch, Industrial 24V Bus Switching.
Automotive LED Lighting Driver
The IPG20N10S4L35ATMA1 is purpose-built for automotive LED headlight and daytime running light drivers operating on 12 V/24 V bus rails. Its 100 V V<sub>DSS</sub> rating provides substantial margin above the 12 V nominal (which can spike to 35-40 V under load-dump), while 35 mΩ R<sub>DS(on)</sub> keeps conduction loss acceptable at 5-10 A LED string currents. The dual-channel arrangement drives two LED banks or supports high-side/low-side PWM dimming topologies; 100% avalanche rating survives the inductive kickback of long LED wiring harnesses without external TVS protection, simplifying the BOM. AEC-Q101 qualification with 175°C junction temperature ensures reliability underhood.
تجویز کردہ
H-Bridge Motor Half-Bridge
In brushed-DC motor half-bridge and H-bridge topologies, the IPG20N10S4L35ATMA1 provides the matched complementary-pair switching required for symmetric PWM operation. Each MOSFET handles up to 20 A continuous current suitable for small DC motors, fans, and pumps (window lift, seat adjusters, blower fans). The 100 V rating tolerates the back-EMF generated when switching inductive loads, while the logic-level gate allows direct drive from 3.3 V microcontrollers like Infineon XMC1000 or NXP S32K without bootstrap or gate-driver level shifting. The shared thermal pad simplifies PCB layout and provides excellent thermal dissipation for sustained motor drive.
تجویز کردہ
Synchronous Rectifier in DC-DC Converters
The IPG20N10S4L35ATMA1 functions effectively as a synchronous rectifier in 12 V-to-low-voltage buck converters for automotive power distribution. Its low 35 mΩ R<sub>DS(on)</sub> reduces rectification loss versus Schottky diodes, especially at 5-10 A loads, while 100 V V<sub>DSS</sub> comfortably handles the maximum input transient on a 24 V automotive rail. The dual MOSFET configuration fits a buck-and-boost or two-phase buck topology in a single small package, saving board space. AEC-Q101 qualification and 175°C junction temperature support under-hood placement adjacent to engine controllers.
تجویز کردہ
Solenoid and Relay Driver
Automotive solenoids (transmission shift, valve, EV charger lock) and high-current relays are switched by the IPG20N10S4L35ATMA1 in low-side or high-side configurations. The 100 V V<sub>DSS</sub> rating tolerates the flyback voltage from 50-100 mH solenoids when de-energized; combined with 100% avalanche-tested rating, the MOSFET absorbs unclamped inductive kickback without external TVS protection. Logic-level gate threshold enables direct GPIO drive from automotive MCUs, and 20 A continuous current handles most automotive solenoid and relay coil currents. The dual-channel arrangement controls two solenoids from one footprint.
تجویز کردہ
Battery Management Protection Switch
In 12 V/24 V automotive battery management systems (BMS), the IPG20N10S4L35ATMA1 serves as a low-loss protection/disconnect switch. Its 35 mΩ R<sub>DS(on)</sub> keeps path loss low at 10-20 A continuous battery currents, while 100 V V<sub>DSS</sub> handles jump-start and load-dump transients up to ~100 V. AEC-Q101 qualification ensures reliability for safety-critical battery isolation. The dual MOSFET supports combined charge/discharge path switching in a single small footprint, simplifying BMS hardware.
تجویز کردہ
Industrial 24V Bus Switching
Beyond automotive, the IPG20N10S4L35ATMA1 suits industrial 24V PLC and factory-automation switching applications where moderate voltage and current are required. Its 100 V V<sub>DSS</sub> rating tolerates 24 V industrial transients and short over-voltage events, while logic-level gate drive interfaces directly with 3.3 V/5 V industrial controllers. The dual-channel arrangement simplifies half-bridge and H-bridge actuator drives common in industrial valve and motor control. AEC-Q101 qualification provides enhanced reliability margins versus standard industrial-grade MOSFETs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPG20N10S4L35ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPG20N10S4L-35 | IPG20N06S2L65AATMA1 | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 |
| V<sub>DSS</sub> | 100 V | 100 V | 60 V | 40 V | 40 V | 60 V |
| R<sub>DS(on)</sub> Max | 35 mΩ | 35 mΩ | 65 mΩ | 8 mΩ | 11 mΩ | 27 mΩ |
| Channel Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Single N-Channel |
اہم امتیازی خصوصیات
- Dual 100 V MOSFETs in single PG-TDSON-8-4 footprint (بمقابلہSingle-channel BSC027N06LS5ATMA1)
- AEC-Q101 automotive qualified (بمقابلہIPG20N10S4L-35 (engineering sample))
- 100% avalanche-tested rating (بمقابلہGeneric 100 V dual MOSFETs)
ڈیزائن نوٹس
Estimated: at I<sub>D</sub>=10 A continuous with R<sub>DS(on)</sub>=35 mΩ at 100°C junction, conduction loss is P=I²R=10²×0.035=3.5 W per channel. With PG-TDSON-8-4 θ<sub>JA</sub>≈50 K/W on a 1 in² 1 oz copper pour (JEDEC EIA/JESD51), junction rises 175 K above 25°C ambient, requiring thermal management. At 20 A per channel (7 W each), heatsinking or substantial copper pour (≥2 in²) is required to stay below 175°C junction. The exposed drain pad must be soldered to a continuous copper pour with multiple thermal vias to the bottom layer for optimal dissipation.
Place the gate drive traces as short as possible (≤10 mm) to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced false turn-on. Add a 10-100 Ω gate-source resistor on each channel to damp LC ringing, and consider a small gate-source capacitor (1-10 nF) to suppress Miller-induced turn-on in half-bridge configurations. The switching-node (half-bridge midpoint) trace must be kept narrow and surrounded by ground copper to minimize EMI coupling into analog circuits.
Do not exceed V<sub>GS</sub> = ±20 V absolute maximum; logic-level drive from 3.3 V is safe but 12 V gate drive on a logic-level part is unnecessary and may stress the gate oxide over time. Verify that V<sub>GS</sub> stays below 20 V during transient ringing. In half-bridge configurations, ensure dead-time insertion (typically 100-500 ns) to prevent shoot-through. Confirm the drain pad is fully soldered to the PCB thermal copper - a dry solder joint at the drain pad destroys thermal dissipation and leads to thermal runaway.
تعمیل کی معلومات
AEC-Q101 (automotive) qualified per Infineon product page; RoHS compliant (Green Product); MSL1 to 260°C peak reflow; halogen-free status not explicitly confirmed in provided data.
