IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: IQEH54NE2LM7UCGATMA1 ✓ فعالIQEH54NE2LM7UCGATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when gate-source voltage exceeds the threshold. N-channel enhancement-mode MOSFETs are the workhorse of synchronous buck converters, low-side switches, load switches, and battery protection circuits because of their low on-resistance and fast switching. The OptiMOS 7 family from Infineon is the latest 25 V-300 V generation, optimised for lowest figure-of-merit (RDS(on) x Qg) to maximise efficiency in switched-mode power supplies.
Key features include 25 V drain-source voltage rating, ultra-low on-resistance, integrated gate protection, and a 9-pin TTFN package with an exposed drain pad for low thermal resistance. The part is rated for 100% UIS (avalanche) testing and is qualified to industrial-grade reliability standards, giving designers headroom for repetitive transient events on the switching node.
The OptiMOS 7 technology uses Infineon's latest trench MOSFET cell architecture to push switching performance close to the theoretical silicon limit. Compared with the OptiMOS 5 generation, the FOM improvement is typically 30-50%, which directly translates to lower converter losses, smaller magnetics, and higher power density. The PG-TTFN-9-3 footprint is footprint-compatible with several Infineon OptiMOS 5/6 parts, simplifying migration.
Typical applications include point-of-load (POL) regulators in servers and datacom, USB-PD power stages, synchronous buck stages in 12 V-input telecom bricks, hot-swap controllers, and battery management protection FETs. The low gate charge also makes the device attractive for high-frequency buck topologies above 1 MHz.
When designing with the IQEH54NE2LM7UCGATMA1, ensure that the gate drive voltage is within the recommended 4.5 V-10 V range to achieve the datasheet RDS(on). Use a Kelvin-source connection when available to suppress source-inductance induced ringing at high di/dt, and place a 1-10 ohm gate resistor to control dv/dt-induced false turn-on in half-bridge configurations.
This page synthesises distributor pricing from LCSC and DigiKey, cross-references drop-in alternatives in the same PG-TTFN-9-3 footprint, and provides design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IQEH54NE2LM7UCGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQEH54NE2LM7UCGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
IQEH50NE2LM7UCGSCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH68NE2LM7UCGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N015GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N019GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L050HATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5LF2ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH54NE2LM7UCGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A |
| Continuous Drain Current (ID) at Tc | 406 A |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 150 W |
| پیکیج | PG-TTFN-9-3 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (typical MOSFET range) |
| RoHS اسٹیٹس | Compliant |
IQEH54NE2LM7UCGATMA1 پن کنفیگریشن
| پن 1 | Source — Source (Kelvin) / Source pin 1 |
| پن 2 | Source — Source pin 2 |
| پن 3 | Source — Source pin 3 |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source pin 5 |
| پن 6 | Source — Source pin 6 |
| پن 7 | Source — Source pin 7 |
| پن 8 | NC/Aux — Not connected (or auxiliary, per datasheet) |
| پن 9 | Drain (Pad) — Drain (exposed thermal pad on bottom) |
عام استعمالات
IQEH54NE2LM7UCGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Point-of-Load (POL) Synchronous Buck, USB-PD Power Stage, Hot-Swap / OR-ing FET, Battery Management Protection FET, Telecom 48 V Half-Brick Bus Converter, Motor Drive Low-Side Switch.
Point-of-Load (POL) Synchronous Buck
The IQEH54NE2LM7UCGATMA1 is an excellent low-side synchronous FET for 12 V-input POL converters powering server, datacom, and FPGA rails. Its low Qg keeps gate-drive losses manageable at 500 kHz-1 MHz switching frequencies, while the low RDS(on) class minimises conduction loss during continuous high-current delivery. In a 25 A buck stage, the part typically runs 8-12C cooler than OptiMOS 5 predecessors, enabling higher power density layouts. The PG-TTFN-9-3 footprint with an exposed drain pad allows direct top-side cooling via a copper pour on the inner PCB layers.
تجویز کردہ
USB-PD Power Stage
The 25 V VDS rating makes the IQEH54NE2LM7UCGATMA1 well-suited to USB Power Delivery 3.1 applications operating from a 20 V USB-PD rail. The part's low gate charge supports multi-MHz buck topologies required to shrink the output inductor and meet 100 W+ PD power density targets. Its 52 A continuous current capability comfortably handles the 5 A (100 W @ 20 V) PD3.1 Extended Power Range spec with thermal margin. Designers can parallel two devices for 140 W+ designs without re-laying out the footprint.
تجویز کردہ
Hot-Swap / OR-ing FET
The IQEH54NE2LM7UCGATMA1 serves as an OR-ing MOSFET in 12 V / 24 V redundant power architectures, where low forward drop and high avalanche ruggedness are critical. Its 100% UIS-tested rating lets the part absorb the energy of reverse-current transients when paralleled supplies swap over, preventing downstream brownouts. The 9-pin TTFN package's exposed pad provides the low thermal impedance needed to dissipate continuous OR-ing loss. Pairing the IQEH54N with a hot-swap controller such as the TLHI family enables fast turn-on without inrush overshoot.
تجویز کردہ
Battery Management Protection FET
In 1S-7S battery pack protection circuits, the IQEH54NE2LM7UCGATMA1 functions as the low-side discharge FET, where its low RDS(on) minimises voltage drop across the protection path. The 25 V VDS provides headroom above typical 4.2 V Li-ion cell stacks, and the part's avalanche rating handles the inductive kick of motor loads in cordless tools and e-mobility packs. The PG-TTFN-9-3 footprint enables compact BMS layouts alongside the protection IC and current-sense amplifier.
تجویز کردہ
Telecom 48 V Half-Brick Bus Converter
While the IQEH54NE2LM7UCGATMA1's 25 V rating is below 48 V telecom bus voltage, it serves as the secondary-side synchronous rectifier in isolated bus converters stepping 48 V to 12 V intermediate bus. The part's low Qg x RDS(on) figure-of-merit maximises rectifier efficiency at 100-300 kHz switching frequencies typical of full-bridge/active-clamp topologies. The exposed-drain pad interfaces directly with an internal heat-spreader copper layer, enabling the high continuous current required for 30 A-50 A bus converter outputs.
تجویز کردہ
Motor Drive Low-Side Switch
The IQEH54NE2LM7UCGATMA1 can be configured as a low-side switch in low-voltage BLDC or brushed DC motor drive applications up to 24 V bus. Its fast switching edges (a few nanoseconds) enable PWM frequencies above 50 kHz, which keeps motor current ripple and acoustic noise low. The 52 A continuous current rating supports 1-2 kW motor drives with appropriate cooling. The PG-TTFN-9-3 package can be co-located with the gate driver IC on the same thermal plane to simplify PCB layout.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQEH54NE2LM7UCGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
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متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IQEH50NE2LM7UCGSCATMA1 | IQEH68NE2LM7UCGATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N019GATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 40 V | 40 V | 60 V |
| Power Dissipation (Ta) | 2.5 W | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 5 TTFN) |
| Power Dissipation (Tc) | 150 W | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
اہم امتیازی خصوصیات
- OptiMOS 7 generation gives best-in-class figure-of-merit (بمقابلہISC015N06NM5LF2ATMA1)
- 25 V rating matches 12 V/24 V bus exactly without derating overhead (بمقابلہIAUCN04S7N015GATMA1 (40V class))
- PG-TTFN-9-3 footprint compatible with wide OptiMOS family (بمقابلہCross-package MOSFETs in SO-8 or PowerPAK)
ڈیزائن نوٹس
Estimated: at 25 A continuous with 1.5 mOhm RDS(on), the IQEH54NE2LM7UCGATMA1 dissipates ~0.94 W in the low-side switch position. The PG-TTFN-9-3 package has a typical theta_JA of ~50 C/W on a 1 oz 4-layer PCB with 1 sq inch of drain copper. At ambient 70C, junction temperature stays below 120C. To achieve 50 A continuous without thermal throttling, the drain copper pour must be at least 2 sq inches on the top layer plus a 2 oz inner plane stitched with thermal vias. Without a sufficient copper pour, the part will exceed 150C Tj within seconds at 25 A.
Place the gate-drive loop as small as possible: the gate-driver output, gate resistor, and the MOSFET gate-source pins should form a tight area of less than 1 sq cm. Use a 4.7-10 ohm gate resistor to dampen the LC resonance between gate inductance and Ciss. A separate Kelvin-source connection (when the package exposes one) eliminates the source-inductance-induced gate-voltage bounce that otherwise slows turn-off and increases switching loss. Keep the power loop (input cap positive -> high-side drain -> low-side source -> input cap negative) area under 0.5 sq cm to minimise parasitic inductance.
Estimated: gate drive below 4.5 V will not fully enhance the IQEH54NE2LM7UCGATMA1 - the RDS(on) can increase 2-3x at 4 V VGS, causing thermal runaway in high-current designs. Always drive the gate to 6-10 V for datasheet performance. In half-bridge configurations, the dv/dt of the switching node can inject current through Cgd and momentarily turn on the low-side FET; mitigate by adding 1-2 V of gate-negative bias during off-state, or by sizing the gate resistor to slow the dv/dt to under 5 V/ns. Do not exceed 25 V VDS - even a 28 V ringing transient can avalanche the part and degrade RDS(on) over time.
The PG-TTFN-9-3 package has a single large drain pad on the bottom. Solder paste stencil apertures should be split into a 3x3 array of smaller openings to prevent the part from floating on excess solder during reflow. Place 8-12 thermal vias (0.3 mm drill) in the drain pad to inner copper layers; tent the vias on the top side to prevent solder wicking. The 9 signal/land pads on the perimeter are quite small (0.3 mm wide), so follow the IPC-7351 land-pattern recommendations exactly - reducing the pad length by even 0.1 mm can cause tombstoning during reflow.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page and distributor listings. Halogen-free per Infineon's OptiMOS 7 family datasheet. AEC-Q100 not qualified - choose automotive-grade variant if required.
