ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
MPN: ISC015N06NM5LF2ATMA1 ✓ فعالISC015N06NM5LF2ATMA1 جائزہ
A Linear FET is a power MOSFET specifically characterized to operate safely in its linear (ohmic) region for sustained durations rather than only as a fully enhanced switch. Within the broader power-semiconductor hierarchy, Linear FETs sit under power MOSFETs, which in turn belong to the discrete semiconductor family used for switching and power conversion in modern electronics. The Infineon OptiMOS 5 Linear FET 2 family is positioned above standard trench MOSFETs because of its relaxed transfer characteristic, which limits peak MOSFET transconductance and thus keeps power dissipation bounded during inrush events.
Key features include ±20 V VGS rating with 3 V minimum gate-threshold, 1.3 nC Qrr (reverse-recovery charge) optimized for low-loss switching, and a monolithic integrated Schottky-like body diode. The wide SOA typically permits several amps of continuous linear-mode current at voltages well above the safe DC ratings of similarly Rds(on)-rated standard MOSFETs, which is critical for hot-swap controllers that must pass inrush current while limiting backplane voltage droop.
The part uses Infineon's latest OptiMOS 5 trench technology, which combines a low figure-of-merit (RDS(on) × Qg) with deliberately widened cell pitch to share current uniformly across the die. This engineering trade-off sacrifices some raw on-state resistance versus ultra-low-Rds(on) switching MOSFETs but delivers linear-region ruggedness that is otherwise unobtainable.
Typical applications include server hot-swap and OR-ing, 48 V telecom e-fuses, battery management system (BMS) charge/discharge FETs, USB-PD sink protection, and industrial PoE loads. The PG-TDSON-8 FL exposed-flap leadless package provides a low thermal resistance path from die to PCB copper, enabling compact 60 V hot-swap designs without external heatsinking at moderate loads.
When designing with this part, observe Infineon's SOA curves in the datasheet to size inrush current and duration; the linear-mode current capability decays rapidly with VDS, so engineers should pick a FET with margin between the application's worst-case operating point and the SOA boundary. Always use a gate-source pull-down resistor to guarantee defined off-state behavior during fault conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet. The ISC015N06NM5LF2ATMA1 belongs to the wider ISCxxxN06 family of Linear FET 2 parts from Infineon, which differ in on-resistance and current ratings within the same PG-TDSON-8 FL footprint.
کے لیے ڈراپ اِن متبادل ISC015N06NM5LF2ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISC015N06NM5LF2ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
ISC017N06NM5LF2ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT008N06NM5LFATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5LF2-VB
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
ISC017N06NM5LF2ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT015N10NF2SATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5LF2ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 32 A |
| Pulsed Drain Current (IDM) at Tc | 275 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 217 W |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 V |
| Gate-Source Voltage Rating | ±20 V |
| Reverse Recovery Charge (Qrr) | 1.3 nC |
| Input Capacitance (Ciss) | 6.9 nF |
| Output Capacitance (Coss) | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | 55 pF |
| Total Gate Charge (Qg) | 90 nC |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8 FL (5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS | Compliant |
ISC015N06NM5LF2ATMA1 پن کنفیگریشن
| پن 1 | Gate — MOSFET gate input |
| پن 2 | Source — Source connection (tied to pin 3 and pin 4) |
| پن 3 | Source — Source connection |
| پن 4 | Source — Source connection |
| پن 5 | Drain — Drain connection (tied to exposed flap) |
| پن 6 | Drain — Drain connection |
| پن 7 | Drain — Drain connection |
| پن 8 | Source Sense — Kelvin source sense for gate drive return |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
ISC015N06NM5LF2ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Server 48 V Hot-Swap and OR-ing, Telecom 48 V e-Fuse Protection, Battery Management System (BMS) Charge/Discharge FET, USB-PD Sink Protection Switch, Industrial Motor Drive Half-Bridge (Low-Side), Solar Charge Controller Load Switch, Automotive 12 V/24 V Load Switching.
Server 48 V Hot-Swap and OR-ing
The ISC015N06NM5LF2ATMA1's wide linear-mode SOA makes it ideal for 48 V server backplane hot-swap and OR-ing functions. During board insertion, the FET absorbs inrush current that charges bulk output capacitors - typically tens of amps for 10-100 ms. The part's 1.55 mΩ RDS(on) at 10 V VGS keeps conduction losses to roughly 1.5 W at 32 A continuous load, while the 60 V VDS rating provides 12 V margin above the 48 V nominal rail. Combined with the 5x6 mm PG-TDSON-8 FL footprint, it enables compact, single-FET-per-rail designs without paralleling.
تجویز کردہ
Telecom 48 V e-Fuse Protection
In 48 V telecom and PoE+ systems, the ISC015N06NM5LF2ATMA1 serves as the linear-mode pass element of an e-fuse that protects downstream DC-DC converters from short circuits. The device's 217 W power dissipation at Tc and ±20 V VGS rating handle repetitive fault events of tens of amps for milliseconds - a regime that would destroy standard 60 V logic-level MOSFETs. Its 1.3 nC Qrr minimizes switching losses during fault-current interruption, while the PG-TDSON-8 FL exposed-flap leadless package delivers thermal resistance suitable for 30+ A continuous pass-through current.
تجویز کردہ
Battery Management System (BMS) Charge/Discharge FET
The ISC015N06NM5LF2ATMA1 is well suited as a charge/discharge FET in 12 V/24 V lithium-ion battery management systems where its linear-mode capability lets it absorb back-EMF transients during relay switching. With 60 V VDS, the part handles 12 V lead-acid and 24 V LiFePO4 packs with ample transient margin. Its 32 A continuous current at Ta supports typical 1-2 kW battery packs, and the PG-TDSON-8 FL footprint enables compact cell-monitoring PCBs. The 1.55 mΩ on-resistance keeps conduction losses under 50 mW at 10 A discharge current.
تجویز کردہ
USB-PD Sink Protection Switch
USB Power Delivery sink designs benefit from the ISC015N06NM5LF2ATMA1's wide SOA when protecting downstream loads from over-current and over-voltage events on the VBUS rail. The 60 V VDS rating exceeds USB-PD 3.1 EPR's 28 V / 36 V / 48 V fixed PDOs with adequate transient margin. During inrush (when a sink's bulk capacitors charge), the FET's linear-mode operation sustains peak currents of 5-10 A for tens of milliseconds without tripping thermal protection. Its low 1.3 nC Qrr minimizes switching losses and EMI during fast PD role-swap events.
تجویز کردہ
Industrial Motor Drive Half-Bridge (Low-Side)
In low-voltage industrial motor drives (24-48 V brushless DC), the ISC015N06NM5LF2ATMA1 functions as a low-side switch with safe avalanche behavior during inductive freewheeling. The 217 W power dissipation at Tc supports pulse currents during motor start-up, while 60 V VDS gives 12 V margin on 48 V bus rails. Its 1.55 mΩ RDS(on) at 10 V VGS reduces conduction loss in PWM-switched half-bridge configurations. The PG-TDSON-8 FL package handles the 175 °C maximum junction temperature needed for sealed motor-drive enclosures.
تجویز کردہ
Solar Charge Controller Load Switch
The ISC015N06NM5LF2ATMA1 is appropriate as a load disconnect switch in MPPT solar charge controllers where its 60 V VDS handles 24 V battery panels with surge margin. The linear-mode SOA allows the FET to absorb reverse-current transients from inductive loads when disconnect occurs at high solar irradiance. With 32 A continuous current at Ta, a single FET can switch 1 kW of solar panel power, and the PG-TDSON-8 FL package dissipates ~3 W at Ta without external heatsinking in well-ventilated enclosures. Its 90 nC Qg keeps gate-driver losses low at typical 25 kHz switching frequencies.
تجویز کردہ
Automotive 12 V/24 V Load Switching
The ISC015N06NM5LF2ATMA1's wide operating temperature range (-55 °C to +175 °C junction) makes it suitable for automotive 12 V/24 V body and chassis load switching. Its 60 V VDS withstands load-dump transients of 40 V typical, and the 1.55 mΩ RDS(on) at 10 V VGS delivers efficient power distribution to high-current loads like seat heaters and radiator fans. While not AEC-Q100 qualified itself, this OptiMOS 5 Linear FET 2 is widely used in non-safety automotive subsystems. The PG-TDSON-8 FL footprint enables compact under-hood and cabin-mounted electronic control units.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISC015N06NM5LF2ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC017N06NM5LF2ATMA1 | IPT008N06NM5LFATMA1 | ISC015N06NM5LF2-VB | IPT015N10NF2SATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | DFN8 (5x6 mm) - same footprint | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| VDS Rating | 60 V | 60 V | 60 V | 60 V | 100 V |
| RDS(on) max @ 10V | 1.55 mΩ | 1.75 mΩ | 0.8 mΩ | 1.3 mΩ (typ) | 1.5 mΩ |
| Continuous ID at Ta | 32 A | 28 A | 30 A | 200 A | 180 A (Tc) |
| Technology Family | OptiMOS 5 Linear FET 2 | OptiMOS 5 Linear FET 2 | OptiMOS 5 Linear FET | SGT | OptiMOS 5 |
| Linear-Mode SOA | Wide (Linear FET optimized) | Wide (Linear FET optimized) | Reduced (Standard switching) | Standard | Standard |
اہم امتیازی خصوصیات
- Engineered linear-mode Safe Operating Area (بمقابلہIPT008N06NM5LFATMA1)
- Lowest RDS(on) in same PG-TDSON-8 FL footprint (بمقابلہISC017N06NM5LF2ATMA1)
- Proven Infineon automotive supply chain (بمقابلہISC015N06NM5LF2-VB (VBsemi))
- Lower Qrr for reduced switching loss (بمقابلہBSC097N06NSATMA1 (standard OptiMOS 5))
ڈیزائن نوٹس
Estimated: At VDS = 30 V (in the linear region) and ID = 5 A during a hot-swap inrush event, the device dissipates P = VDS × ID = 150 W. The PG-TDSON-8 FL package has theta_JC ≈ 0.7 °C/W, so the die temperature rises by 105 °C above the case - placing junction temperature near the 175 °C maximum if the case is already at 70 °C. Engineers must keep linear-mode operating points well inside the datasheet SOA curve; consider the ISC017N06NM5LF2ATMA1 for higher inrush or reduce inrush duration with a larger gate RC.
The PG-TDSON-8 FL exposed flap must be soldered to the PCB drain copper pour for thermal and electrical performance. Use at least 1 oz copper on top and bottom layers, stitched with thermal vias (0.3 mm pitch, 12+ vias) under the flap. The Source Sense pin (pin 8) provides a Kelvin connection for the gate driver - route the gate-drive return path directly to pin 8 rather than the main source pads to avoid dv/dt-induced turn-on.
Do not use the ISC015N06NM5LF2ATMA1 in continuous DC linear operation at full rated current - the linear-mode SOA derates rapidly with VDS. Always include a gate-source pull-down resistor (10-100 kΩ) to keep the FET off during controller power-up, and add a TVS diode from gate to source to clamp below ±20 V during drain-voltage transients. For repetitive pulsed operation, consult the datasheet's pulsed SOA curves rather than the DC curve.
Keep the gate-drive loop area minimal: place the gate resistor and gate-source pull-down within 5 mm of pins 1 and 8. Route the high-current drain-source loop directly under the FET using wide copper pours (≥ 4 mm wide on outer layers, ≥ 8 mm wide with internal planes). For 48 V hot-swap, add an RC snubber (10 Ω + 1 nF) from drain to source within 10 mm of the FET to damp VDS ringing during turn-off.
The 6.9 nF Ciss and 90 nC Qg of the ISC015N06NM5LF2ATMA1 require a gate driver capable of sourcing/sinking at least 1 A peak for sub-microsecond switching transitions. A standard CMOS gate driver like the IRS2104STRPBF is adequate; for higher switching speeds, a UCC27531-class 4 A driver reduces switching losses. Add a small ferrite bead or 10 Ω gate resistor to control dv/dt-related ringing in 48 V applications.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Not AEC-Q100 qualified for automotive safety applications - select automotive-grade Infineon parts if required. Halogen-free status not stated in available data.
