IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon
MPN: IRF7416TRPBF ✓ فعالIRF7416TRPBF جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. P-channel variants conduct when the gate is pulled below the source voltage, simplifying high-side switching in positive-rail systems by allowing direct logic-level control without charge pumps or gate drivers. The IRF7416TRPBF belongs to the MOSFET > power MOSFET > P-channel MOSFET > surface-mount MOSFET taxonomy within Infineon's discrete-semiconductor portfolio.
Key specifications include a drain-to-source breakdown voltage (VDS) of -30V, continuous drain current (ID) of -10A at TA = 25C, pulsed drain current of -50A, and static drain-to-source on-resistance (RDS(on)) of 20 mOhm maximum at VGS = -10V. The device also features an avalanche-rated single-pulse drain current of -50A, a maximum power dissipation of 2.5W at TA = 25C, and a junction-to-ambient thermal resistance of 50 C/W on the standard SO-8 footprint. Gate threshold voltage (VGS(th)) is rated at -1V to -3V, supporting direct 3.3V or 5V logic-level drive.
The IRF7416TRPBF uses Infineon's HEXFET cell structure, which reduces cell pitch and JFET resistance versus planar MOSFETs, lowering conduction loss while maintaining robust avalanche ruggedness. Its low gate charge of 61 nC enables fast switching transitions, reducing switching losses in 500 kHz to 1 MHz buck converters and minimizing dead-time in synchronous rectification.
Typical applications include high-side load switching in USB power distribution, notebook and tablet battery management, POL (point-of-load) buck converters, and reverse-polarity protection circuits. The logic-level gate threshold also makes it suitable for direct MCU GPIO drive in low-current switching paths.
Designers should observe SO-8 layout best practices: minimize the source-lead PCB loop inductance, use a thermal copper pour of at least 1 square inch under the drain tab, and avoid exceeding the 2.5W package dissipation limit at 25C ambient without forced-air cooling.
This page synthesizes current distributor pricing, drop-in alternative cross-references, and practical SO-8 MOSFET design notes not consolidated in the manufacturer datasheet, enabling rapid sourcing and second-source validation for new designs.
کے لیے ڈراپ اِن متبادل IRF7416TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF7416TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, FET Type, MSL Level, Drain-to-Source Voltage (VDS).
IRF7416PBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7416TRPBF-1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7306TRPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFH5020TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLR9343TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLH5030TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF7416TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | P-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) at TA=25C | -10 A |
| Pulsed Drain Current (IDM) | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V |
| Total Gate Charge (Qg) | 61 nC |
| Power Dissipation (PD) max at TA=25C | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W |
| آپریٹنگ جنکشن درجہ حرارت رینج | -55 C to +150 C |
| پیکیج | 8-SO (SOIC-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| MSL لیول | 1 (unlimited) |
IRF7416TRPBF پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Source — Source (internally bonded to pins 3, 4) |
| پن 3 | Source — Source (internally bonded) |
| پن 4 | Source — Source (internally bonded) |
| پن 5 | Drain — Drain (internally bonded to pins 6, 7, 8) |
| پن 6 | Drain — Drain (internally bonded) |
| پن 7 | Drain — Drain (internally bonded) |
| پن 8 | Drain — Drain (internally bonded) |
محفوظ آپریٹنگ ایریا
عام استعمالات
IRF7416TRPBF کے لیے موزوں ہے 7 ایپلیکیشنs: High-Side Load Switch in USB Power Distribution, Notebook and Tablet Battery Management, Point-of-Load Synchronous Buck Rectifier, Reverse-Polarity Protection Circuit, Motor Drive H-Bridge Low-Side Switch, Hot-Swap Card Insertion Switch, LED Matrix Row Driver Switch.
High-Side Load Switch in USB Power Distribution
The IRF7416TRPBF is well-suited for USB Type-C VBUS high-side load switching because its P-channel topology allows direct 3.3V GPIO drive without a charge pump. With VDS = -30V, RDS(on) = 20 mOhm at VGS = -10V, and ID = -10A, it can carry the 5V/3A USB-PD rail with conduction losses under 0.3W. The 61 nC gate charge enables sub-microsecond turn-off, supporting fast-role-swap and over-current protection response times required by the USB-PD 3.1 specification. Place a 10uF ceramic bypass on the source side and use a 100kOhm gate pull-up to keep the MOSFET off during MCU reset.
تجویز کردہ
Notebook and Tablet Battery Management
The IRF7416TRPBF serves as the battery-side P-channel protection switch in 2S to 3S lithium-ion notebook battery packs, where its -30V VDS rating covers the 8.4V to 12.6V pack voltage with margin. The 20 mOhm RDS(on) keeps full-load voltage drop under 100 mV at 5A discharge, preserving usable battery capacity. Its -1V to -3V VGS(th) supports direct drive from the battery gas-gauge MCU without external gate drivers. Designers should pair it with a battery-protection IC for over-current and over-voltage cut-off and add a TVS across drain-source for hot-plug transient suppression.
تجویز کردہ
Point-of-Load Synchronous Buck Rectifier
In 12V-input point-of-load buck converters operating at 500 kHz to 1 MHz, the IRF7416TRPBF functions as the low-side synchronous rectifier on the ground-referenced switching node. Its 61 nC total gate charge and 20 mOhm RDS(on) minimize dead-time body-diode conduction and switching loss. While the IRF7416 is a P-channel device not typically used as a synchronous rectifier (N-channel is preferred for low-side), it can replace a high-side P-channel switch in non-isolated buck topologies. Pair it with a low-side N-channel such as BSC155N06NDATMA1 for a complete POL stage.
تجویز کردہ
Reverse-Polarity Protection Circuit
The IRF7416TRPBF is widely used as a reverse-polarity protection switch between the input connector and the downstream load in industrial and automotive 12V/24V systems. Wired source-to-load and drain-to-battery with gate tied to ground through a pull-down resistor, it conducts during normal polarity and blocks reverse battery connection. The -30V VDS rating handles 24V bus transients with adequate margin, and the 10A continuous current supports most low-power industrial sensor and PLC loads. Add a Schottky diode across drain-source to suppress the avalanche energy during reverse-polarity events.
تجویز کردہ
Motor Drive H-Bridge Low-Side Switch
The IRF7416TRPBF can serve as the low-side switch in 12V brushed DC motor H-bridges driving small DC fans, pumps, and solenoids. Its 10A continuous and 50A pulsed drain current handle motor inrush transients, while the 20 mOhm RDS(on) keeps conduction loss below 2W at 10A, within the SO-8 thermal budget with a 1 square inch copper pour. Use a gate-driver IC for switching speeds above 25 kHz to avoid shoot-through. Pair with an N-channel high-side such as IPD031N03LGATMA1 for a complete H-bridge.
تجویز کردہ
Hot-Swap Card Insertion Switch
The IRF7416TRPBF acts as the inrush-limiting hot-swap switch in -48V telecom and 24V industrial plug-in card applications, where its -30V VDS rating covers -24V rails with margin. The P-channel topology allows the card-side MCU to enable the rail with a single GPIO after card-edge connector mating is complete. The 61 nC gate charge and 20 mOhm RDS(on) provide a controlled dV/dt during turn-on when paired with a gate resistor of 100 Ohm to 1 kOhm. Use a downstream current-sense amplifier and TVS to clamp inductive transients during card removal.
تجویز کردہ
LED Matrix Row Driver Switch
In large LED matrix displays and signage, the IRF7416TRPBF drives each row or column as a high-side P-channel switch. With VDS = -30V and ID = -10A, a single MOSFET can sink or source the current for an entire row of parallel LEDs running at 24V supply. The 20 mOhm RDS(on) keeps voltage drop uniform across rows, preventing brightness variation. PWM dimming is supported by toggling the gate at audio rates above 100 Hz to avoid flicker, with the 61 nC gate charge enabling >10 kHz PWM rates without significant driver loss.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF7416TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF7416PBF | IRF7416TRPBF-1 | IRF7306TRPBF | IRFH5020TRPBF | IRLR9343TRPBF | IRLH5030TRPBF |
|---|---|---|---|---|---|---|---|
| Package | SO-8 | SO-8 | SO-8 | SO-8 (dual P-ch) | SO-8 | SO-8 | SO-8 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| FET Type / Polarity | P-Channel | P-Channel | P-Channel | Dual P-Channel | N-Channel | P-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | -30 V | -30 V | -30 V | -30 V | 200 V (N-ch) | -55 V | 100 V (N-ch) |
| Continuous Drain Current (ID) at TA=25C | -10 A | -10 A | -10 A | -3.6 A (per channel) | 11 A (N-ch) | -20 A | 33 A (N-ch) |
| RDS(on) max at VGS=10V | 20 mOhm | 20 mOhm | 20 mOhm | 50 mOhm | 50 mOhm | 39 mOhm | 5.4 mOhm |
| Total Gate Charge (Qg) | 61 nC | 61 nC | 61 nC | 30 nC | 38 nC | 110 nC | 78 nC |
| Power Dissipation (PD) max at TA=25C | 2.5 W | 2.5 W | 2.5 W | 2.0 W | 2.5 W | 2.5 W | 3.1 W |
| Automotive Grade (AEC-Q101) | No (Industrial) | No | No | No | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Industry-standard SO-8 single-MOSFET pinout (بمقابلہIRF7306TRPBF (dual P-channel SO-8))
- Infineon HEXFET process technology (بمقابلہIRFH5020TRPBF (N-channel 200V))
- Logic-level VGS(th) supports 3.3V GPIO drive (بمقابلہIRLR9343TRPBF (-55V P-channel))
ڈیزائن نوٹس
Estimated: at TA = 25C with 1 square inch of copper-pour heatsinking, the SO-8 package RthJA is approximately 50 C/W, limiting continuous power dissipation to 2.5W. At 5A load with RDS(on) = 20 mOhm, conduction loss is about 0.5W and junction temperature rises 25C above ambient - safe for industrial environments. For 8A to 10A loads, conduction loss approaches 1.6W to 2W, requiring either forced-air cooling or larger copper pours of at least 2 square inches. Designers should never operate the SO-8 package continuously at the 2.5W absolute maximum without thermal verification.
Minimize the source-lead PCB loop inductance by placing the gate driver and gate-source pull-down resistor within 5mm of pins 1-4. Use a 4-layer PCB with a solid ground plane on layer 2 directly under the SO-8 footprint to provide a low-inductance thermal and electrical return path. Avoid routing noisy switching signals across the drain tab (pins 5-8) to prevent capacitive coupling into the gate. Solder the thermal pad (drain tab) to a copper pour of at least 1 square inch for adequate heat spreading.
Do not exceed the -30V VDS rating during inductive switching transients - always add a TVS diode or Schottky snubber across drain-source when driving relays, solenoids, or motors. Do not leave the gate floating: an undriven gate can charge through the Miller capacitance and cause unintended turn-on. Always include a 10kOhm to 100kOhm gate-source pull-down resistor. The VGS(th) range of -1V to -3V means the device can partially enhance at 3.3V logic levels; drive the gate to -10V for full enhancement and minimum RDS(on).
For P-channel high-side switching, place the MOSFET between the input voltage rail and the load, with source at the rail and drain at the load. This orientation allows the gate pull-up resistor to tie to the source rail, ensuring the MOSFET is off by default when the MCU GPIO is high-impedance during reset. Add a 100 Ohm gate resistor to limit dV/dt during turn-on, especially when driving large gate-charge loads at high switching frequencies above 100 kHz.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page; lead-free (Pb-free) terminations confirmed by 'PBF' suffix. Not AEC-Q100/AEC-Q101 qualified - the standard IRF7416TRPBF is rated for industrial use; choose IRF7416TRPBF-1 for ESD-enhanced variants if needed.
