IRFZ34NPBF - 55V 29A N-Channel HEXFET MOSFET | Infineon
MPN: IRFZ34NPBF ✓ فعالIRFZ34NPBF جائزہ
A power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate (typically silicon-oxide) to modulate conduction between drain and source. The HEXFET (hexagonal-cell) layout multiplies parallel cells to lower R_DS(on), while the planar process trades slightly higher specific on-resistance for rugged avalanche behavior and easier paralleling. Within the broader taxonomy, the IRFZ34NPBF sits as: N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor. The "NPBF" suffix denotes a lead-free (Pb-free) TO-220 variant that is RoHS-compliant for global commercial-industrial use.
Key specifications include a maximum drain-source voltage V_DSS of 55 V, continuous drain current I_D of 29 A at 25 C case temperature, pulsed current handling per the safe-operating-area curve, and a typical R_DS(on) of about 40 mOhm at V_GS = 10 V. Threshold voltage is in the standard 2-4 V logic-compatible range, gate charge is around 22.7 nC, and the device is qualified to JEDEC standards with a 175 C maximum junction temperature. The TO-220AB package provides low thermal resistance and a familiar mechanical mounting footprint that has been industry standard for over four decades.
Architecturally, the IRFZ34NPBF uses a planar DMOS cell optimized for switching frequencies below 100 kHz, which covers the majority of motor drives, DC-DC converters, and solenoid/relay drivers found in industrial control equipment. The silicon is tuned for broad distributor availability and improved repetitive-avalanche ruggedness, which is critical for inductive-load switching where the MOSFET must absorb the energy stored in the magnetic field when the device turns off.
Typical applications include low-frequency switched-mode power supplies (SMPS), DC motor drives for industrial automation, solenoid and relay drivers, uninterruptible power supply (UPS) low-side switches, and general-purpose high-current load switching in 12 V / 24 V / 48 V systems. Automotive body-electronics conversions and LED driver power stages also use this part where 55 V V_DSS provides adequate margin above 24 V bus transients.
When designing with this part, calculate conduction loss as I_D^2 x R_DS(on) and switching loss from gate charge Q_g, V_DS, and switching frequency. Ensure V_GS is driven to at least 10 V for full enhancement, and provide adequate heatsinking because the TO-220AB thermal resistance (junction-to-case) is low but junction-to-ambient is dominated by the heatsink choice.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IRFZ34NPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFZ34NPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, FET Type, RoHS Status, Lead-Free.
IRFZ34PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFZ24NPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFZ48NSTRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFB4110PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFP2907PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTP30N06
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STP55NF06L
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFZ34NPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active |
| FET Type | N-Channel, Enhancement Mode |
| Technology | HEXFET (Planar DMOS, 5th generation) |
| Drain-Source Voltage (V_DSS) | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | 29 A |
| Power Dissipation (P_D) at Tc=25C | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm |
| Gate Charge (Q_g) typ | 22.7 nC |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C |
| Maximum Junction Temperature | 175 C |
| پیکیج | TO-220AB (3-pin + tab, through-hole) |
| ماؤنٹنگ ٹائپ | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) |
| Qualification | JEDEC standard |
| RoHS اسٹیٹس | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) |
IRFZ34NPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input; drive to 10 V for full enhancement |
| پن 2 | Drain — Drain terminal; electrically common with the metal mounting tab |
| پن 3 | Source — Source terminal; reference for gate drive and load return |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
IRFZ34NPBF کے لیے موزوں ہے 8 ایپلیکیشنs: 24V Brushed DC Motor Drive, Low-Side Switch for Solenoid and Relay Drivers, Switched-Mode Power Supply (SMPS) Primary Switch, Uninterruptible Power Supply (UPS) Battery Switch, Automotive 12V Load Switch, LED Driver Power Stage, Battery Management and Charging Systems, General-Purpose High-Current DC Switching.
24V Brushed DC Motor Drive
The IRFZ34NPBF is well-suited for low-frequency 24 V brushed DC motor drive half-bridge or low-side switch topologies. Its 55 V V_DSS provides safe headroom above a 24 V bus plus inductive spike transients, and 29 A continuous drain current covers most sub-100 W motor applications. The 40 mOhm R_DS(on) at 10 V V_GS keeps conduction loss manageable at duty cycles below 80%. Switching below 100 kHz, the part is in its efficient operating regime; place it on the low-side with a Schottky or fast-recovery flyback diode across the motor inductance. Conduction loss P_cond = I_D^2 x R_DS(on) = 29^2 x 0.040 = 33.9 W at full load, so a clip-on heatsink is mandatory.
تجویز کردہ
Low-Side Switch for Solenoid and Relay Drivers
Industrial solenoid and relay coils demand a rugged low-side switch capable of absorbing inductive kickback. The IRFZ34NPBF's planar HEXFET cell structure provides wide safe-operating-area (SOA) and improved repetitive-avalanche ruggedness, both essential when an unclamped inductive load is switched. Mount the part on a TO-220 clip-on heatsink; tie the tab to drain and ensure the heatsink is electrically isolated if the drain is not at ground potential. A flyback diode or TVS across the coil is recommended, but if absent the MOSFET's avalanche rating absorbs the energy. The 68 W power dissipation rating and 175 C junction temperature give substantial thermal margin.
تجویز کردہ
Switched-Mode Power Supply (SMPS) Primary Switch
The IRFZ34NPBF is widely used as the primary-side switch in low-to-medium power isolated SMPS operating below 100 kHz, particularly in 12 V / 24 V input flyback and forward converters. The 55 V V_DSS comfortably covers 24 V rectified input plus leakage spike margin, and 29 A continuous current supports converters up to approximately 150 W. The 22.7 nC typical gate charge allows economical gate-drive design with a simple bipolar or MOSFET driver IC; the part is optimized for frequencies up to about 50 kHz, beyond which switching loss begins to dominate. Snubber design across the primary winding is mandatory to keep V_DS peaks below 80% of the 55 V rating.
تجویز کردہ
Uninterruptible Power Supply (UPS) Battery Switch
In a UPS, the IRFZ34NPBF can serve as a low-side disconnect switch between the battery and the inverter bus. Its 40 mOhm R_DS(on) keeps conduction loss low even at the 20-25 A discharge currents typical of 1 kVA UPS systems. The 55 V V_DSS accommodates 24 V battery stacks plus transient spikes. Use a gate-drive circuit that pulls V_GS high to 12 V for full enhancement, and place a TVS or Zener clamp from gate to source to protect against transient gate over-voltage during load-step events. The through-hole TO-220AB package allows easy PCB mounting and clip-on heatsinking.
تجویز کردہ
Automotive 12V Load Switch
The IRFZ34NPBF can be used as a 12 V automotive body-electronics load switch for lamps, motors, and heater loads. With 55 V V_DSS it tolerates 12 V bus plus load-dump transients up to 35 V, and 29 A continuous current covers most accessory loads. The planar process gives repetitive-avalanche ruggedness needed when switching inductive loads without an external freewheel diode. Note that this part is not AEC-Q101 qualified; for automotive designs requiring formal qualification, use an automotive-grade equivalent such as the IRFZ34NSPBF or Infineon AUIRFZ34N. Drive the gate through a dedicated gate-driver or BJT pre-driver to ensure fast turn-off.
تجویز کردہ
LED Driver Power Stage
The IRFZ34NPBF serves as the main switching element in constant-current LED drivers for architectural and industrial lighting. Its 55 V V_DSS covers 24 V and 48 V LED strings, and 29 A current drives multi-amp LED arrays. The 40 mOhm R_DS(on) keeps conduction loss below 5% at typical operating currents of 5-10 A, and the HEXFET planar cell structure supports PWM dimming at frequencies up to several kHz. Mount the device on a small aluminum PCB or clip-on heatsink; place a gate resistor of 10-100 ohm to control switching speed and EMI. A gate-driver IC like the IRS4428STRPBF or IR21064STRPBF provides the sharp gate transitions needed for high-frequency PWM operation.
تجویز کردہ
Battery Management and Charging Systems
In lead-acid or lithium battery charging systems, the IRFZ34NPBF can function as a low-side switching element in buck or synchronous-rectifier topologies. The 55 V V_DSS handles 24 V battery stacks plus transient over-voltage, and the 40 mOhm R_DS(on) minimizes conduction loss during high-current charging. The HEXFET planar process is well-suited to switching frequencies of 50-100 kHz typical of ICR battery chargers. Use a dedicated gate-driver such as the IR2101 or IR2104 to switch the gate cleanly; pair with a current-sense resistor and op-amp for closed-loop current regulation. Through-hole TO-220AB packaging simplifies hand-soldered prototyping and field-serviceable designs.
تجویز کردہ
General-Purpose High-Current DC Switching
Beyond the specific applications above, the IRFZ34NPBF is a general-purpose workhorse for any through-hole 55 V / 29 A switching task. Typical use cases include ham-radio antenna tuning networks, audio amplifier output stages (Class D), solar charge controller low-side switches, and hobby robotics motor drivers. The TO-220AB form factor is breadboard-friendly and compatible with standard clip-on heatsinks, TO-220 isolation pads, and PCB-mount heatsink assemblies. Designers benefit from the part's wide availability across multiple distributors, simple 10 V gate drive requirement, and predictable planar-cell switching behavior below 100 kHz.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFZ34NPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFZ34PBF | IRFZ24NPBF | IRFZ48NSTRLPBF | IRFB4110PBF | NTP30N06 | STP55NF06L |
|---|---|---|---|---|---|---|---|
| Package | TO-220AB (through-hole) | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| V_DSS (V) | 55 | 55 | 55 | 55 | 100 | 60 | 60 |
| I_D continuous (A) | 29 | 29 | 17 | 64 | 120 | 30 | 50 |
| R_DS(on) max at 10V (mOhm) | 40 | 50 | 70 | 14 | 4.5 | 38 | 20 |
| P_D (W) | 68 | 68 | 45 | 94 | 370 | 78 | 100 |
| Technology / Generation | HEXFET 5th gen (planar) | HEXFET 3rd gen (planar) | HEXFET 5th gen (planar) | HEXFET 5th gen (planar) | HEXFET 7th gen | Trench MOSFET | STripFET (trench), logic-level |
| Logic-Level Gate Drive (V_GS(th) < 2.5V) | No | No | No | No | No | No | Yes |
اہم امتیازی خصوصیات
- Fifth-generation HEXFET planar cell with optimized low RDS(on) (بمقابلہIRFZ34PBF (third-generation))
- Higher continuous drain current in same TO-220AB package (بمقابلہIRFZ24NPBF)
- Mature, broadly-distributed part with extensive application heritage (بمقابلہNTP30N06 (onsemi cross-brand))
ڈیزائن نوٹس
Estimated: at I_D = 20 A and R_DS(on) = 40 mOhm, conduction loss is approximately 16 W. The TO-220AB junction-to-case thermal resistance is about 2.2 C/W, so junction temperature rises roughly 35 C above case at this load. To keep Tj below 150 C with 25 C ambient, the case-to-ambient thermal resistance must be below (150-25-35)/16 = 5.6 C/W, which requires a clip-on heatsink of at least 5 C/W or copper-PCB area of about 15 cm^2. Always mount with thermal compound and consider a TO-220 silicone insulation pad if the heatsink is not at drain potential.
Keep the gate-drive loop area small to minimize parasitic inductance that causes ringing and possible MOSFET avalanche. Place the gate resistor (10-100 ohm typical) directly at the gate pin, and route the gate return (source) directly back to the driver IC ground. For switching above 50 kHz, add a 10 kohm pull-down resistor from gate to source to ensure the device stays off during driver start-up. Place a local TVS or Zener (12-15 V) from gate to source if the gate-drive circuit has any risk of over-voltage transients.
Do not exceed V_GS = +/-20 V absolute maximum - the thin gate oxide can be permanently damaged. Do not assume the metal tab is electrically isolated - the tab is internally connected to the drain, so the heatsink must be isolated with a silicone pad and plastic shoulder washer if the heatsink is not at drain potential. Do not use the part above its SOA curve at high V_DS and high I_D simultaneously; consult the datasheet SOA graph for your switching frequency. Finally, do not assume 29 A is achievable without substantial heatsinking - the part will thermally limit far below rated current in free air.
For through-hole TO-220AB mounting, use 1.6 mm or 2.0 mm FR-4 PCB with 2 oz copper on the drain tab land pattern to maximize heat spreading. Drill hole diameter of approximately 1.1 mm for the three leads; allow at least 5 mm of copper pour around the tab for heat conduction. If the design must also survive vibration, use a TO-220 clip with a screw-and-spring arrangement rather than relying solely on the leads for mechanical retention.
At switching edges above 50 kHz, the high dv/dt (typically 5-10 V/ns) and di/dt of the IRFZ34NPBF can couple into adjacent traces through parasitic capacitance. Keep the drain-node copper area small to reduce radiated EMI, and use a snubber (RC or RCD) across the primary winding or load if ringing exceeds the 55 V V_DSS rating. Add a small ferrite bead in series with the gate if oscillation is observed on the gate waveform during turn-off.
تعمیل کی معلومات
Pb-free per NPBF suffix; RoHS compliant per distributor catalog data. Not AEC-Q100 qualified; for automotive applications use AUIRFZ34N or an equivalent AEC-Q101 part. JEDEC qualified per datasheet.
