IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR2405TRPBF ✓ فعالIRFR2405TRPBF جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to switch and amplify signals in power-electronics circuits. As a member of the HEXFET family, this part uses Infineon's IR MOSFET process, a planar cell technology that combines low RDS(on) per silicon area with robust avalanche ruggedness. Within the broader taxonomy it sits under: N-Channel MOSFET -> Power MOSFET -> Discrete Semiconductor -> Power Management IC family. The DPAK (TO-252) surface-mount package enables compact PCB layouts while providing a large tab/drain thermal pad for heat extraction.
Key specifications include 55 V drain-source breakdown voltage (VDS), 56 A continuous ID at 25C case temperature, 110 W power dissipation (PD), 16 mOhm RDS(on) max at VGS=10V, 70 nC typical gate charge (Qg), and an operating junction temperature range of -55C to +175C. The device is also characterized by fast switching, logic-level gate drive support at VGS=10V, and 100% avalanche-tested ruggedness per industry standards.
The IRFR2405TRPBF uses Infineon's seventh-generation HEXFET process to achieve low on-resistance per unit silicon area while maintaining fast body-diode recovery and high dv/dt immunity. The advanced process technology reduces conduction losses substantially compared with earlier-generation 55V MOSFETs. Its drain tab doubles as the main thermal pathway, supporting sustained high-current operation with proper PCB copper heatsinking.
Typical applications include automotive and industrial power management (load switching, reverse-battery protection), motor control and DC motor drive circuits, synchronous rectifier stages in DC-DC buck/boost converters, solenoid and relay drivers, and high-current switching in power tool electronics. The 55 V rating also makes it useful in 12 V and 24 V bus systems where inductive transients occur.
When designing with this MOSFET, ensure the gate is driven with at least 10 V VGS to achieve full RDSon. Place a gate-source pull-down resistor (10-100 kOhm) to prevent accidental turn-on from high dV/dt transients. Provide adequate copper area on the drain tab for thermal dissipation - DPAK's thermal resistance depends directly on copper footprint size.
This page synthesizes verified distributor pricing, drop-in same-package alternatives, and practical design guidance that is not consolidated on any single manufacturer or distributor page.
کے لیے ڈراپ اِن متبادل IRFR2405TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFR2405TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Total Gate Charge (Qg), Package, Continuous Drain Current (ID) at TC=25C, MSL Level.
IRFR2405PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR2405TRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →AUIRFR2405
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR1205TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR1018ETRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR9120NTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR120NTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR5305TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR2405TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm |
| Total Gate Charge (Qg) | 70 nC |
| Power Dissipation (PD) at Tc=25C | 110 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | TO-252AA (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 3 (Gate, Drain, Source) + Tab |
| MSL لیول | 1 |
| RoHS اسٹیٹس | Compliant (Lead-Free PBF suffix) |
| Avalanche Rated | Yes (100% avalanche tested) |
IRFR2405TRPBF پن کنفیگریشن
| پن 1 | Gate — MOSFET gate control input; drive with 10V VGS for full RDS(on) |
| پن 2 | Source — MOSFET source terminal; connect to ground for low-side switching |
| پن 3 | Drain — MOSFET drain terminal (also tied to thermal tab) |
| پن Tab | Drain — Exposed thermal pad electrically connected to Drain; solder to PCB copper for heatsinking |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
IRFR2405TRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive 12V/24V Load Switching, DC Motor Drive / H-Bridge Switch, Synchronous Rectifier in DC-DC Buck Converter, Reverse-Battery Protection Circuit, Solenoid and Relay Driver, Power Tool and Battery-Pack Switching.
Automotive 12V/24V Load Switching
The IRFR2405TRPBF's 55 V VDS, 56 A continuous ID, and 110 W power dissipation make it ideal for automotive 12V and 24V bus load-switching applications. With RDS(on) of 16 mOhm at VGS=10V, conduction losses are minimized across high-current loads such as headlamp drivers, fuel-pump controllers, and HVAC blower motors. The DPAK package with exposed drain tab provides a robust thermal path for sustained high-current operation in under-hood environments. Its 100% avalanche-tested ruggedness also tolerates the inductive kickback produced when switching solenoids, relays, and motors on the 12V/24V automotive bus.
تجویز کردہ
DC Motor Drive / H-Bridge Switch
The IRFR2405TRPBF is well-suited as the low-side or high-side switch in DC motor H-bridge driver circuits driving brushed motors in robotics, power tools, and small EV traction. Its 56 A continuous rating handles stall-current surges typical of brushed DC motors, and its 70 nC total gate charge enables fast PWM switching above 20 kHz for smooth torque control. In H-bridge configurations, four IRFR2405TRPBF units form a complete bidirectional drive; the complementary P-channel variant IRFR5305TRPBF (also DPAK) can serve as the high-side switch with matched switching characteristics.
تجویز کردہ
Synchronous Rectifier in DC-DC Buck Converter
The IRFR2405TRPBF can serve as the synchronous rectifier (low-side switch) in buck-converter designs for 12V-to-5V/3.3V step-down conversion. Its 16 mOhm RDS(on) at 10V gate drive minimizes rectifier conduction loss, which dominates total loss at high load currents. With 70 nC gate charge and fast body-diode recovery, it supports switching frequencies from 100 kHz to 500 kHz, enabling compact inductor-based designs. In high-current point-of-load converters for industrial and automotive ECUs, it efficiently replaces Schottky diodes and reduces rectifier losses by 50% or more.
تجویز کردہ
Reverse-Battery Protection Circuit
The IRFR2405TRPBF is ideal as the high-side P-channel reverse-battery protection MOSFET replacement (using N-channel in high-side bootstrap configuration) or as the ground-side disconnect switch in automotive reverse-polarity protection modules. Its 55V VDS rating easily handles 24V jump-start transients on 12V systems, and the 16 mOhm RDS(on) keeps continuous current-path loss below 0.5W at 5A load. The TO-252AA (DPAK) package provides sufficient thermal dissipation for the moderate currents typical of body-control modules and ECU power inputs.
تجویز کردہ
Solenoid and Relay Driver
The IRFR2405TRPBF handles the high inrush and inductive flyback energy when driving solenoids, relays, and valve actuators. With 56 A pulsed current capability and 100% avalanche energy rating, it absorbs the inductive kickback that occurs when the magnetic field collapses at switch-off, eliminating the need for external freewheeling diodes in many designs. Industrial solenoid-driver modules, fuel-injector drivers, and HVAC valve controls use this MOSFET to switch 1-5A continuous loads with fast PWM control and reliable avalanche absorption up to the part's 55V VDS ceiling.
تجویز کردہ
Power Tool and Battery-Pack Switching
The IRFR2405TRPBF is widely used as the main power switch in cordless power tools and Li-ion battery-pack discharge protection circuits. Its 56 A continuous current handles the high discharge currents of 18V/20V cordless drill and impact-driver packs, while the 16 mOhm RDS(on) minimizes voltage drop across the discharge path to maximize runtime. The DPAK package's exposed thermal tab provides direct PCB heatsinking for the short-duration high-current pulses of cordless-tool motor starts and stall events. The TRPBF tape-and-reel format suits high-volume SMD production.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFR2405TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFR2405PBF | AUIRFR2405 | IRFR1205TRPBF | IRFR1018ETRPBF |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 55 V | 55 V | 60 V |
| Continuous Drain Current (ID) | 56 A | 56 A | 56 A | 44 A (-21%) | 56 A |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | 16 mOhm | 16 mOhm | 27 mOhm (+69%) | 22 mOhm (+38%) |
| Automotive Grade (AEC-Q101) | No | No | Yes (AEC-Q101) | No | No |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
اہم امتیازی خصوصیات
- True drop-in tube-packaged variant available (بمقابلہIRFR2405PBF)
- Automotive-qualified sibling part in same package (بمقابلہAUIRFR2405)
- Same-package upgrade path to higher VDS (بمقابلہIRFR1018ETRPBF)
- Complementary P-Channel for H-bridge designs (بمقابلہIRFR5305TRPBF)
ڈیزائن نوٹس
Estimated: at ID=20A with RDS(on)=16mOhm, conduction loss is roughly P=I^2*R=6.4W. DPAK's thermal resistance to a 1-square-inch copper pour on FR-4 is approximately 30-40 C/W, yielding a 192-256 C junction temperature rise above ambient - well above the 175C limit. To sustain 20A, use at least 4 square inches of drain-tab copper or add a small heatsink. For 5A applications, the same copper area keeps junction rise below 30C.
Solder the exposed drain tab directly to a continuous PCB copper pour. Use thermal vias (typically 0.3mm diameter, 0.5mm pitch) under the tab to conduct heat into inner copper layers. Place a 10kOhm gate-source resistor directly between gate and source pins to prevent parasitic turn-on from high dV/dt transients. Route the gate trace away from drain-source switching node to minimize capacitive coupling.
Do not drive the gate with less than 8V - the IRFR2405TRPBF is NOT a logic-level MOSFET and will not achieve full RDS(on) below VGS=10V. Do not exceed VGS=20V absolute maximum. Do not assume the 56A rating applies at PCB-mount - this rating requires Tc=25C (case temperature), and at TA=25C with no heatsink, derate to 15-20A maximum continuous. Do not skip the gate-source pull-down resistor or you may see sporadic turn-on from noise or ESD events.
Keep the gate-drive loop area as small as possible to minimize parasitic oscillation. Use a gate-drive resistor of 10-100 ohm in series with the gate to dampen ringing. Place input bulk capacitors close to the drain pin for switching applications. The source pin (pin 2) and source-sense connection (if used) should be Kelvin-connected to avoid adding source inductance to the gate-drive loop, which would slow switching and increase losses.
تعمیل کی معلومات
RoHS compliant per 'PBF' suffix in MPN. Lead-free (Pb-free) terminations. AEC-Q101 automotive qualification available on AUIRFR2405 variant (same die). Halogen-free status not explicitly stated in verified data - consult Infineon product page for confirmation. REACH compliance per EU regulatory framework.
