IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR2405TRPBF ✓ نشطIRFR2405TRPBF نظرة عامة
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to switch and amplify signals in power-electronics circuits. As a member of the HEXFET family, this part uses Infineon's IR MOSFET process, a planar cell technology that combines low RDS(on) per silicon area with robust avalanche ruggedness. Within the broader taxonomy it sits under: N-Channel MOSFET -> Power MOSFET -> Discrete Semiconductor -> Power Management IC family. The DPAK (TO-252) surface-mount package enables compact PCB layouts while providing a large tab/drain thermal pad for heat extraction.
Key specifications include 55 V drain-source breakdown voltage (VDS), 56 A continuous ID at 25C case temperature, 110 W power dissipation (PD), 16 mOhm RDS(on) max at VGS=10V, 70 nC typical gate charge (Qg), and an operating junction temperature range of -55C to +175C. The device is also characterized by fast switching, logic-level gate drive support at VGS=10V, and 100% avalanche-tested ruggedness per industry standards.
The IRFR2405TRPBF uses Infineon's seventh-generation HEXFET process to achieve low on-resistance per unit silicon area while maintaining fast body-diode recovery and high dv/dt immunity. The advanced process technology reduces conduction losses substantially compared with earlier-generation 55V MOSFETs. Its drain tab doubles as the main thermal pathway, supporting sustained high-current operation with proper PCB copper heatsinking.
Typical applications include automotive and industrial power management (load switching, reverse-battery protection), motor control and DC motor drive circuits, synchronous rectifier stages in DC-DC buck/boost converters, solenoid and relay drivers, and high-current switching in power tool electronics. The 55 V rating also makes it useful in 12 V and 24 V bus systems where inductive transients occur.
When designing with this MOSFET, ensure the gate is driven with at least 10 V VGS to achieve full RDSon. Place a gate-source pull-down resistor (10-100 kOhm) to prevent accidental turn-on from high dV/dt transients. Provide adequate copper area on the drain tab for thermal dissipation - DPAK's thermal resistance depends directly on copper footprint size.
This page synthesizes verified distributor pricing, drop-in same-package alternatives, and practical design guidance that is not consolidated on any single manufacturer or distributor page.
بدائل مباشرة لـ IRFR2405TRPBF — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IRFR2405TRPBF (نفس عامل الشكل والبصمة) — يختلف في Technology, Total Gate Charge (Qg), Package, Continuous Drain Current (ID) at TC=25C, MSL Level.
IRFR2405PBF
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IRFR2405TRLPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←AUIRFR2405
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IRFR1205TRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR1018ETRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR9120NTRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR120NTRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR5305TRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR2405TRPBF الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm |
| Total Gate Charge (Qg) | 70 nC |
| Power Dissipation (PD) at Tc=25C | 110 W |
| درجة حرارة الوصلة التشغيلية | -55C to +175C |
| العلبة | TO-252AA (DPAK) |
| نوع التركيب | Surface Mount |
| عدد الأطراف | 3 (Gate, Drain, Source) + Tab |
| مستوى MSL | 1 |
| حالة RoHS | Compliant (Lead-Free PBF suffix) |
| Avalanche Rated | Yes (100% avalanche tested) |
تكوين أطراف IRFR2405TRPBF
| دبوس 1 | Gate — MOSFET gate control input; drive with 10V VGS for full RDS(on) |
| دبوس 2 | Source — MOSFET source terminal; connect to ground for low-side switching |
| دبوس 3 | Drain — MOSFET drain terminal (also tied to thermal tab) |
| دبوس Tab | Drain — Exposed thermal pad electrically connected to Drain; solder to PCB copper for heatsinking |
منطقة التشغيل الآمن (DC, Tc=25C)
التطبيقات النموذجية
IRFR2405TRPBF مناسب لـ 6 التطبيقs: Automotive 12V/24V Load Switching, DC Motor Drive / H-Bridge Switch, Synchronous Rectifier in DC-DC Buck Converter, Reverse-Battery Protection Circuit, Solenoid and Relay Driver, Power Tool and Battery-Pack Switching.
Automotive 12V/24V Load Switching
The IRFR2405TRPBF's 55 V VDS, 56 A continuous ID, and 110 W power dissipation make it ideal for automotive 12V and 24V bus load-switching applications. With RDS(on) of 16 mOhm at VGS=10V, conduction losses are minimized across high-current loads such as headlamp drivers, fuel-pump controllers, and HVAC blower motors. The DPAK package with exposed drain tab provides a robust thermal path for sustained high-current operation in under-hood environments. Its 100% avalanche-tested ruggedness also tolerates the inductive kickback produced when switching solenoids, relays, and motors on the 12V/24V automotive bus.
موصى به
DC Motor Drive / H-Bridge Switch
The IRFR2405TRPBF is well-suited as the low-side or high-side switch in DC motor H-bridge driver circuits driving brushed motors in robotics, power tools, and small EV traction. Its 56 A continuous rating handles stall-current surges typical of brushed DC motors, and its 70 nC total gate charge enables fast PWM switching above 20 kHz for smooth torque control. In H-bridge configurations, four IRFR2405TRPBF units form a complete bidirectional drive; the complementary P-channel variant IRFR5305TRPBF (also DPAK) can serve as the high-side switch with matched switching characteristics.
موصى به
Synchronous Rectifier in DC-DC Buck Converter
The IRFR2405TRPBF can serve as the synchronous rectifier (low-side switch) in buck-converter designs for 12V-to-5V/3.3V step-down conversion. Its 16 mOhm RDS(on) at 10V gate drive minimizes rectifier conduction loss, which dominates total loss at high load currents. With 70 nC gate charge and fast body-diode recovery, it supports switching frequencies from 100 kHz to 500 kHz, enabling compact inductor-based designs. In high-current point-of-load converters for industrial and automotive ECUs, it efficiently replaces Schottky diodes and reduces rectifier losses by 50% or more.
موصى به
Reverse-Battery Protection Circuit
The IRFR2405TRPBF is ideal as the high-side P-channel reverse-battery protection MOSFET replacement (using N-channel in high-side bootstrap configuration) or as the ground-side disconnect switch in automotive reverse-polarity protection modules. Its 55V VDS rating easily handles 24V jump-start transients on 12V systems, and the 16 mOhm RDS(on) keeps continuous current-path loss below 0.5W at 5A load. The TO-252AA (DPAK) package provides sufficient thermal dissipation for the moderate currents typical of body-control modules and ECU power inputs.
موصى به
Solenoid and Relay Driver
The IRFR2405TRPBF handles the high inrush and inductive flyback energy when driving solenoids, relays, and valve actuators. With 56 A pulsed current capability and 100% avalanche energy rating, it absorbs the inductive kickback that occurs when the magnetic field collapses at switch-off, eliminating the need for external freewheeling diodes in many designs. Industrial solenoid-driver modules, fuel-injector drivers, and HVAC valve controls use this MOSFET to switch 1-5A continuous loads with fast PWM control and reliable avalanche absorption up to the part's 55V VDS ceiling.
موصى به
Power Tool and Battery-Pack Switching
The IRFR2405TRPBF is widely used as the main power switch in cordless power tools and Li-ion battery-pack discharge protection circuits. Its 56 A continuous current handles the high discharge currents of 18V/20V cordless drill and impact-driver packs, while the 16 mOhm RDS(on) minimizes voltage drop across the discharge path to maximize runtime. The DPAK package's exposed thermal tab provides direct PCB heatsinking for the short-duration high-current pulses of cordless-tool motor starts and stall events. The TRPBF tape-and-reel format suits high-volume SMD production.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IRFR2405TRPBF — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IRFR2405PBF | AUIRFR2405 | IRFR1205TRPBF | IRFR1018ETRPBF |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 55 V | 55 V | 60 V |
| Continuous Drain Current (ID) | 56 A | 56 A | 56 A | 44 A (-21%) | 56 A |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | 16 mOhm | 16 mOhm | 27 mOhm (+69%) | 22 mOhm (+38%) |
| Automotive Grade (AEC-Q101) | No | No | Yes (AEC-Q101) | No | No |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
أبرز الفروقات
- True drop-in tube-packaged variant available (مقابلIRFR2405PBF)
- Automotive-qualified sibling part in same package (مقابلAUIRFR2405)
- Same-package upgrade path to higher VDS (مقابلIRFR1018ETRPBF)
- Complementary P-Channel for H-bridge designs (مقابلIRFR5305TRPBF)
ملاحظات التصميم
Estimated: at ID=20A with RDS(on)=16mOhm, conduction loss is roughly P=I^2*R=6.4W. DPAK's thermal resistance to a 1-square-inch copper pour on FR-4 is approximately 30-40 C/W, yielding a 192-256 C junction temperature rise above ambient - well above the 175C limit. To sustain 20A, use at least 4 square inches of drain-tab copper or add a small heatsink. For 5A applications, the same copper area keeps junction rise below 30C.
Solder the exposed drain tab directly to a continuous PCB copper pour. Use thermal vias (typically 0.3mm diameter, 0.5mm pitch) under the tab to conduct heat into inner copper layers. Place a 10kOhm gate-source resistor directly between gate and source pins to prevent parasitic turn-on from high dV/dt transients. Route the gate trace away from drain-source switching node to minimize capacitive coupling.
Do not drive the gate with less than 8V - the IRFR2405TRPBF is NOT a logic-level MOSFET and will not achieve full RDS(on) below VGS=10V. Do not exceed VGS=20V absolute maximum. Do not assume the 56A rating applies at PCB-mount - this rating requires Tc=25C (case temperature), and at TA=25C with no heatsink, derate to 15-20A maximum continuous. Do not skip the gate-source pull-down resistor or you may see sporadic turn-on from noise or ESD events.
Keep the gate-drive loop area as small as possible to minimize parasitic oscillation. Use a gate-drive resistor of 10-100 ohm in series with the gate to dampen ringing. Place input bulk capacitors close to the drain pin for switching applications. The source pin (pin 2) and source-sense connection (if used) should be Kelvin-connected to avoid adding source inductance to the gate-drive loop, which would slow switching and increase losses.
معلومات الامتثال
RoHS compliant per 'PBF' suffix in MPN. Lead-free (Pb-free) terminations. AEC-Q101 automotive qualification available on AUIRFR2405 variant (same die). Halogen-free status not explicitly stated in verified data - consult Infineon product page for confirmation. REACH compliance per EU regulatory framework.
