K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung
MPN: K4RCH046VM-2CCM ✗ اختتامِ زندگیK4RCH046VM-2CCM جائزہ
DDR5 SDRAM (Double Data Rate 5 Synchronous Dynamic Random Access Memory) is the fifth generation of the DDR memory family, the dominant main-memory technology in computing systems. In the system hierarchy it sits under volatile semiconductor memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> DDR5. Compared with DDR4, DDR5 doubles the burst length, moves the power management IC onto the module, and delivers roughly 30% better power efficiency, according to Samsung Semiconductor.
Key features of this device include the 5600 Mbps data rate (PC5-44800 class bandwidth), the x4 organization suited to ECC-protected server and workstation memory subsystems, and the low 1.1 V core supply that reduces memory-subsystem power draw. The commercial temperature range of 0 to 85 degrees C covers standard computing environments. Samsung lists the product status as Sample, meaning it is in the pre-mass-production qualification stage.
The 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides short interconnects, low parasitic inductance, and good signal integrity at multi-gigabit data rates. FBGA is the industry-standard package family for discrete DRAM components and supports standard SMT reflow assembly.
Typical applications include DDR5 RDIMM and server memory modules, workstation and desktop PC main memory, networking and communication equipment requiring high-bandwidth buffering, and consumer electronics adopting the DDR5 platform.
Design consideration: DDR5 requires a dedicated PMIC (such as the on-DIMM 5V-to-1.1V converter), on-die ECC handling at the controller, and careful length-matched routing to the 5600 Mbps signal environment; verify the JEDEC DDR5 slot and chip-enable configuration before layout.
This page synthesizes distributor listings, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Pricing references are as of 2026-09-04.
کے لیے ڈراپ اِن متبادل K4RCH046VM-2CCM — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں K4RCH046VM-2CCM (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Interface, Density, Operating Temperature, Organization.
K4RHE165VB-BCWM
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4RHE086VB-BCWM
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4RAH165VP-BCWM
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4RCH046VM-2CCM زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| میموری ٹائپ | DDR5 SDRAM |
| Density | 32 Gb |
| تنظیم | 4G x 4 |
| ڈیٹا ریٹ | 5600 Mbps |
| سپلائی وولٹیج | 1.1 V |
| آپریٹنگ درجہ حرارت | 0 to 85 C |
| پیکیج | 78-ball FBGA |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Product Status | Sample |
K4RCH046VM-2CCM 78-ball fbga پن کنفیگریشن گائیڈ
K4RCH046VM-2CCM (78-ball fbga پیکیج) کے لیے پن کنفیگریشن۔ اس ڈیجیٹل IC میں GPIO، کمیونیکیشن انٹرفیس (UART، SPI، I2C) اور پاور پنز شامل ہیں۔ متبادل پن فنکشنز اور کنفیگریشن آپشنز کے لیے مینوفیکچرر کے ڈیٹا شیٹ سے رجوع کریں۔ ایمبیڈڈ سسٹم ڈیزائن اور PCB لے آؤٹ کے لیے ضروری۔
کے لیے تفصیلی پن آؤٹ ڈیٹا دستیاب نہیں K4RCH046VM-2CCM.
رجوع کریں ڈیٹا شیٹ مکمل پن کنفیگریشن کے لیے۔
عام استعمالات
K4RCH046VM-2CCM کے لیے موزوں ہے 6 ایپلیکیشنs: DDR5 Server RDIMM Memory Modules, Workstation and Desktop PC Main Memory, Networking and Communication Equipment, AI Accelerator and GPU Companion Memory, Industrial Computing and Edge Servers, Consumer Electronics and Smart Home Hubs.
DDR5 Server RDIMM Memory Modules
The K4RCH046VM-2CCM fits server RDIMM designs because its x4 organization is the standard choice for ECC-protected server memory, where the memory controller corrects errors per bit lane across nine chips per rank. Its 5600 Mbps data rate supports modern Xeon and EPYC memory subsystems, and the 1.1 V rail keeps per-DIMM power within RDIMM thermal budgets. On the module, the chip connects to the register clock driver (RCD) and the on-DIMM PMIC that converts 12 V or 5 V to the 1.1 V core rail. The trade-off is that Sample-status silicon requires qualification runs before production commitments, so server OEMs should validate across corner temperature (0 to 85 C) and voltage margins during design-in.
تجویز کردہ
Workstation and Desktop PC Main Memory
High-end desktop platforms with DDR5 memory controllers benefit from the K4RCH046VM-2CCM's 5600 Mbps rate, which supports dual-channel and multi-channel configurations delivering over 80 GB/s per channel at DDR5-5600 class timings. The 1.1 V operation lowers UDIMM power versus DDR4's 1.2 V, aiding thermals in compact chassis. In a consumer module the chip operates with the on-DIMM 5 V PMIC (such as the RA229801 class regulators), and x4 parts are typically used in workstation error-correcting configurations rather than non-ECC consumer DIMMs. Designers should confirm platform QVL support, because Sample-status memory may lack final SPD programming and speed-bin binning data published for production parts.
تجویز کردہ
Networking and Communication Equipment
Switches, routers, and 5G baseband cards use high-bandwidth DRAM for packet buffering, flow tables, and deep packet inspection. The K4RCH046VM-2CCM's 5600 Mbps interface provides the random-access bandwidth that line-card processors and network processors require, while its 32Gb density consolidates buffering into fewer chips, reducing BOM count and board area versus DDR3-generation designs. The 1.1 V supply lowers continuous power draw in always-on telecom equipment where every watt affects fan and PSU sizing. Because networking gear runs 24/7, designers should derate against the 85 C commercial ceiling and verify refresh behavior (tREFI/tREFI adjustments) at sustained high temperature in the system thermal profile before committing to the sample-phase part.
تجویز کردہ
AI Accelerator and GPU Companion Memory
AI inference cards and accelerator boards pair HBM with a DDR5 pool for weight offload, KV-cache spillover, and host-visible buffers. The K4RCH046VM-2CCM's 4G x 4 organization suits ECC-protected pooling, and 5600 Mbps operation supplies tens of GB/s of streaming bandwidth that complements HBM's peak rates at a fraction of the cost per gigabyte. The 1.1 V rail integrates cleanly with accelerator board power trees that already generate low-voltage silicon rails. Designers should note that x4 DDR5 requires controller-side ECC to realize full reliability, and that Sample-status qualification data (e.g., final speed-bin yields) should be confirmed with Samsung before ramping accelerator production volumes.
تجویز کردہ
Industrial Computing and Edge Servers
Edge servers, industrial PCs, and factory automation controllers increasingly adopt DDR5 for its bandwidth and power efficiency. The K4RCH046VM-2CCM provides 32Gb per chip, letting compact edge motherboards reach 16 GB to 64 GB with a handful of components, preserving board area for I/O and security silicon. Its 1.1 V operation reduces heat in fanless or sealed enclosures, though the 0 to 85 C commercial range means extended-temperature (down to -40 C) deployments need an industrial-grade DDR5 variant or thermal management to keep the DRAM junction within spec. The x4 organization supports the lockstep or ECC modes common in industrial controllers, improving uptime in unattended remote installations.
تجویز کردہ
Consumer Electronics and Smart Home Hubs
Premium smart-home hubs, NAS devices, and media servers use DDR5-class memory for multi-stream video transcoding and on-device AI. The K4RCH046VM-2CCM's 5600 Mbps bandwidth sustains multiple 4K streams and local AI models, while its 32Gb density allows single-chip memory configurations that shrink main-board area in compact enclosures. The 1.1 V supply supports energy-efficiency targets such as Energy Star idle-power limits. Consumer designs should note the part's Sample status and commercial 0 to 85 C range: volume consumer programs should request production-status roadmap commitments from Samsung, and enclosures must keep DRAM ambient below 85 C during sustained transcoding workloads.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا K4RCH046VM-2CCM — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | K4RHE165VB-BCWM | K4RHE086VB-BCWM | K4RAH165VP-BCWM |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) |
| Memory Generation | DDR5 | DDR5 | DDR5 | DDR5 |
| Organization | 4G x 4 | x16 (2G x 16, per part-number decode) | x8 (4G x 8, per part-number decode) | x16 (per part-number decode) |
| Supply Voltage | 1.1 V | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) |
اہم امتیازی خصوصیات
- x4 organization maximizes ECC-protected configurations (بمقابلہK4RHE165VB-BCWM)
- 32Gb density doubles per-chip capacity versus 16Gb DDR5 (بمقابلہK4RHE086VB-BCWM)
- DDR5 power efficiency at 1.1 V (بمقابلہK4A8G085WB (DDR4))
ڈیزائن نوٹس
DDR5 requires a dedicated 1.1 V PMIC; per the DDR5 standard the power management IC typically resides on the memory module converting 5 V to the core rail with I2C/I3C telemetry for host-side monitoring. Provide low-ESR bulk capacitance near the DRAM VDD balls and follow Samsung's DDR5 layout guideline for VDDQ decoupling. Because the K4RCH046VM-2CCM is at Sample status, confirm final IDD specs in the production datasheet before closing the power budget - estimated derating of 10-15% on early IDD figures is a common precaution.
At 5600 Mbps, DDR5 DQ and DQS traces require controlled impedance (JEDEC ODT settings per the controller vendor), length matching within spec skew windows, and reference-plane continuity under every signal group. Route fly-by command/address with the DDR5 topology and apply the read/write leveling training defined by the memory controller. Simulate eye diagrams at the fastest speed bin and at corner voltage (1.1 V +/-5%) before tape-out of a new DIMM or board design.
Three frequent mistakes with new-generation DRAM: (1) assuming x4 and x8 DDR5 chips share the same ball map - the data-pin assignment differs, so K4RHE086VB (x8) is not footprint-identical in function to this x4 part without datasheet verification; (2) overlooking that Sample-status parts may carry early die revisions with different SPD/timing tables; (3) ignoring on-die ECC behavior in DDR5, which changes RAS characteristics versus DDR4. Always lock the die revision and request a PCN/notification program from Samsung before production.
تعمیل کی معلومات
No compliance data present in the verified web data for this MPN; verify against the official Samsung datasheet and Samsung's environmental reports.
