K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung
MPN: K4RHE165VB-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.8 | $118.00 |
| 100 | $10.9 | $1,090.00 |
| 500 | $10.2 | $5,100.00 |
| 1,000 | $9.6 | $9,600.00 |
Drop-in alternatives for K4RHE165VB-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RHE086VB-BCWM
✅ Drop-In✓ In Stock
$7.65 / Unit
View Datasheet →K4RHE086VP
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$9.9 / Unit
View Datasheet →K4RAH165VB-BCWM
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$9.92 / Unit
View Datasheet →K4RAH165VB-BCQK
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Contact for price
View Datasheet →K4RAH165VP-BCWM
✅ Drop-In✓ In Stock
$8.34 / Unit
View Datasheet →K4RHE165VB-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 24 Gb |
| Organization | 1G x 16 |
| Data Rate | 5600 Mbps |
| Supply Voltage | 1.1 V |
| Package | 106 FBGA |
| Operating Temperature | 0 C to +85 C |
| Product Status | Mass Production |
| Mounting Type | Surface Mount |
| Interface | Parallel, DDR5 |
| Generation | DDR5 |
| Application Segment | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | BCWM |
K4RHE165VB-BCWM 106 fbga Pin Configuration Guide
Complete pinout information for K4RHE165VB-BCWM (106 fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RHE165VB-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RHE165VB-BCWM is suitable for 6 applications: DDR5 UDIMM and SODIMM Memory Modules, High-Performance Computing (HPC) Memory Subsystems, Client and Gaming Desktop Platforms, AI Accelerator and Machine Learning Memory, Networking and Edge Server Appliances, Embedded and Industrial Compute Modules.
DDR5 UDIMM and SODIMM Memory Modules
The K4RHE165VB-BCWM is a primary building block for next-generation DDR5 unbuffered and small-outline DIMMs. Its 24Gb per die organized as 1G x 16 allows a single-rank module to reach higher total capacity with fewer devices than 16Gb-based designs, reducing BOM count and module height constraints. At 5600 Mbps per pin and 1.1V VDD, an x16-based module achieves substantial bandwidth while the DDR5 on-module PMIC handles rail conversion from the 5V auxiliary input. Designers place eight or sixteen x16 devices per 64-bit (or 80-bit ECC) module, following JEDEC DDR5 fly-by command/address routing with per-bit lane length matching. The commercial 0 to 85 C range suits client and desktop platforms.
Recommended
High-Performance Computing (HPC) Memory Subsystems
HPC nodes require maximum memory bandwidth and capacity density, and the K4RHE165VB-BCWM addresses both: 5600 Mbps per pin sustains high aggregate bandwidth across multiple channels, while 24Gb per die maximizes capacity per socket. Distributor data (SMC, Octopart) explicitly designates this component for HPC systems where bandwidth and efficiency are critical. In a dual-socket server populating eight DDR5 channels, using 24Gb x16 dies increases achievable capacity per rank versus 16Gb parts, letting cluster designers fit larger working sets per node without increasing module count. The 1.1V operation yields roughly 30% better power efficiency than DDR4, directly reducing datacenter energy cost per FLOP.
Recommended
Client and Gaming Desktop Platforms
Consumer desktop and gaming platforms adopt DDR5 UDIMMs built from high-density dies such as the K4RHE165VB-BCWM to reach 48 GB-class module capacities. The 1G x 16 organization matches the x16 UDIMM topology used by mainstream Intel and AMD platforms supporting DDR5-5600, a common JEDEC-standard speed point. Its 1.1V rail and DDR5 on-die features support the power and signal-integrity requirements of high-speed consumer motherboards. Enthusiast builders benefit from the larger per-die density, which enables high-capacity dual-channel kits without double-sided overcrowding, improving thermal headroom and enabling stable sustained memory clocks in air-cooled enclosures during long gaming sessions.
Recommended
AI Accelerator and Machine Learning Memory
AI training and inference hosts benefit from the K4RHE165VB-BCWM's combination of density, bandwidth, and efficiency. Large model weights and activation buffers exceed on-package HBM capacity, so host-side DDR5 provides the overflow working set; 24Gb dies let each DIMM slot deliver maximum capacity, and the 5600 Mbps rate shortens data-movement stalls during batch loading. Distributor sourcing data identifies this exact MPN in AI and next-generation module supply chains. The 1.1V supply reduces the power budget that AI racks must dedicate to memory, which matters at scale where thousands of DIMMs operate continuously under load.
Recommended
Networking and Edge Server Appliances
Edge servers, 5G baseband units, and network appliances use SODIMM or mini-RDIMM slots populated with DDR5 x16 dies like the K4RHE165VB-BCWM. Its commercial 0 to 85 C rating covers typical managed-temperature edge enclosures, and the 24Gb density lets compact form factors reach tens of gigabytes without expanding board area. Packet buffering, flow tables, and TLS session caches are memory-latency and capacity sensitive, making DDR5-5600 bandwidth valuable for high-throughput forwarding planes. The x16 organization simplifies layout on narrow SODIMM interconnects, and improved power efficiency reduces the thermal load on passively cooled edge hardware.
Recommended
Embedded and Industrial Compute Modules
Industrial PCs, medical imaging consoles, and test-and-measurement controllers integrate soldered-down or SODIMM DDR5 using components such as the K4RHE165VB-BCWM. The 106-ball FBGA package supports automated optical inspection and reliable reflow assembly, and the mass-production status assures long-term sourcing for multi-year product lifecycles. The 0 to 85 C commercial range fits controlled industrial enclosures, and DDR5's on-die ECC improves data reliability for instrumentation logging and image buffering. Designers should follow the DDR5 fly-by topology and reference Samsung's layout guidelines for strobe length matching when integrating the device directly onto a COM Express or SMARC carrier.
Recommended
Recommended Products Summary
Engineering reference data for K4RHE165VB-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RHE086VB-BCWM | K4RAH165VB-BCWM | K4RAH165VP-BCWM |
|---|---|---|---|---|
| Package | 106 FBGA | 106 FBGA - same | 106 FBGA - same | 106 FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 24 Gb (x8) | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 2G x 8 | 1G x 16 | 1G x 16 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0 C to +85 C | 0 C to +85 C | [DATA_NEEDED] | [DATA_NEEDED] |
| Product Status | Mass Production | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 24Gb monolithic density maximizes capacity per module (vs K4RAH165VB-BCWM)
- Next-generation DDR5 die with 5600 Mbps operation (vs K4RAH165VP-BCWM)
- x16 organization simplifies consumer module layout (vs K4RHE086VB-BCWM)
Design Notes
DDR5 modules use a fly-by command/address clock topology: route CA signals from the edge connector through each DRAM in series to termination, matching flight-time skew rather than absolute length. Data lanes (DQ/DM/DQS) are point-to-point per device and must be length-matched within the group; x16 devices carry 16 DQ pairs per die, so plan via stubs carefully on the 106-ball FBGA breakout. Follow the Samsung DDR5 design guide and JEDEC DDR5 module ballout for escape routing patterns under the package.
The K4RHE165VB-BCWM operates at 1.1V VDD; DDR5 relocates power conversion onto the module via a PMIC fed from a 5V auxiliary rail. Size the PMIC for peak worst-case current: at 5600 Mbps with all banks active, per-die IDD can reach several hundred milliamps, and a 16-device module draws multiples of amps. Estimated: a 16-die module at ~0.4 A per die worst case needs a PMIC rated above 6 A continuous with fast transient response for read/write turnaround. Place bulk and 0.1 uF decoupling capacitors at each VDD ball pair per the datasheet layout section.
Do not assume DDR4 module layouts can be reused: DDR5 splits the bus into two independent subchannels per DIMM and moves VPP/VDD management to the on-module PMIC, so legacy layouts require redesign. Also verify SPD and BIOS memory-training support for the specific die density - 24Gb dies require newer memory reference code than 16Gb-based modules. Substituting the x16 part with an x8 sibling (K4RHE086VB-BCWM) changes rank organization and module capacity; re-run signal-integrity training and thermal validation after any substitution.
Compliance Information
Compliance data was not present in the retrieved web results; confirm RoHS/REACH status on the official Samsung product page.
