K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung
MPN: K4RCH046VM-2CCM ✗ Cuối đờiK4RCH046VM-2CCM Tóm tắt
DDR5 SDRAM (Double Data Rate 5 Synchronous Dynamic Random Access Memory) is the fifth generation of the DDR memory family, the dominant main-memory technology in computing systems. In the system hierarchy it sits under volatile semiconductor memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> DDR5. Compared with DDR4, DDR5 doubles the burst length, moves the power management IC onto the module, and delivers roughly 30% better power efficiency, according to Samsung Semiconductor.
Key features of this device include the 5600 Mbps data rate (PC5-44800 class bandwidth), the x4 organization suited to ECC-protected server and workstation memory subsystems, and the low 1.1 V core supply that reduces memory-subsystem power draw. The commercial temperature range of 0 to 85 degrees C covers standard computing environments. Samsung lists the product status as Sample, meaning it is in the pre-mass-production qualification stage.
The 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides short interconnects, low parasitic inductance, and good signal integrity at multi-gigabit data rates. FBGA is the industry-standard package family for discrete DRAM components and supports standard SMT reflow assembly.
Typical applications include DDR5 RDIMM and server memory modules, workstation and desktop PC main memory, networking and communication equipment requiring high-bandwidth buffering, and consumer electronics adopting the DDR5 platform.
Design consideration: DDR5 requires a dedicated PMIC (such as the on-DIMM 5V-to-1.1V converter), on-die ECC handling at the controller, and careful length-matched routing to the 5600 Mbps signal environment; verify the JEDEC DDR5 slot and chip-enable configuration before layout.
This page synthesizes distributor listings, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Pricing references are as of 2026-09-04.
Bộ thay thế dễ dàng lắp đặt cho K4RCH046VM-2CCM — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4RCH046VM-2CCM (cùng hình factor và footprint) — khác nhau ở Package, Interface, Density, Operating Temperature, Organization.
K4RHE165VB-BCWM
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4RHE086VB-BCWM
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4RAH165VP-BCWM
✅ Drop-In ⚠️ Thông số chưa được xác minh✓ Còn hàng
$24.6094 / Đơn vị
Xem tài liệu →K4RCH046VM-2CCM Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR5 SDRAM |
| Density | 32 Gb |
| Tổ chức | 4G x 4 |
| Tốc độ dữ liệu | 5600 Mbps |
| Điện áp cung cấp | 1.1 V |
| Nhiệt độ hoạt động | 0 to 85 C |
| Hộp | 78-ball FBGA |
| Kiểu lắp đặt | Surface Mount |
| Product Status | Sample |
Hướng dẫn cấu hình chân K4RCH046VM-2CCM 78-ball fbga
Cấu hình chân cho K4RCH046VM-2CCM (78-ball fbga gói). IC số này bao gồm chân GPIO, giao diện truyền thông (UART, SPI, I2C) và chân nguồn. Tham khảo tài liệu thông số kỹ thuật của nhà sản xuất để biết các chức năng chân thay thế và tùy chọn cấu hình. Cực kỳ quan trọng cho thiết kế hệ thống tích hợp và lập trình PCB.
Không có dữ liệu chân cụ thể sẵn có cho K4RCH046VM-2CCM.
Tham khảo: tài liệu kỹ thuật cho cấu hình chân đầy đủ.
Ứng dụng tiêu biểu
K4RCH046VM-2CCM phù hợp cho 6 Áp dụngs: DDR5 Server RDIMM Memory Modules, Workstation and Desktop PC Main Memory, Networking and Communication Equipment, AI Accelerator and GPU Companion Memory, Industrial Computing and Edge Servers, Consumer Electronics and Smart Home Hubs.
DDR5 Server RDIMM Memory Modules
The K4RCH046VM-2CCM fits server RDIMM designs because its x4 organization is the standard choice for ECC-protected server memory, where the memory controller corrects errors per bit lane across nine chips per rank. Its 5600 Mbps data rate supports modern Xeon and EPYC memory subsystems, and the 1.1 V rail keeps per-DIMM power within RDIMM thermal budgets. On the module, the chip connects to the register clock driver (RCD) and the on-DIMM PMIC that converts 12 V or 5 V to the 1.1 V core rail. The trade-off is that Sample-status silicon requires qualification runs before production commitments, so server OEMs should validate across corner temperature (0 to 85 C) and voltage margins during design-in.
Được đề xuất
Workstation and Desktop PC Main Memory
High-end desktop platforms with DDR5 memory controllers benefit from the K4RCH046VM-2CCM's 5600 Mbps rate, which supports dual-channel and multi-channel configurations delivering over 80 GB/s per channel at DDR5-5600 class timings. The 1.1 V operation lowers UDIMM power versus DDR4's 1.2 V, aiding thermals in compact chassis. In a consumer module the chip operates with the on-DIMM 5 V PMIC (such as the RA229801 class regulators), and x4 parts are typically used in workstation error-correcting configurations rather than non-ECC consumer DIMMs. Designers should confirm platform QVL support, because Sample-status memory may lack final SPD programming and speed-bin binning data published for production parts.
Được đề xuất
Networking and Communication Equipment
Switches, routers, and 5G baseband cards use high-bandwidth DRAM for packet buffering, flow tables, and deep packet inspection. The K4RCH046VM-2CCM's 5600 Mbps interface provides the random-access bandwidth that line-card processors and network processors require, while its 32Gb density consolidates buffering into fewer chips, reducing BOM count and board area versus DDR3-generation designs. The 1.1 V supply lowers continuous power draw in always-on telecom equipment where every watt affects fan and PSU sizing. Because networking gear runs 24/7, designers should derate against the 85 C commercial ceiling and verify refresh behavior (tREFI/tREFI adjustments) at sustained high temperature in the system thermal profile before committing to the sample-phase part.
Được đề xuất
AI Accelerator and GPU Companion Memory
AI inference cards and accelerator boards pair HBM with a DDR5 pool for weight offload, KV-cache spillover, and host-visible buffers. The K4RCH046VM-2CCM's 4G x 4 organization suits ECC-protected pooling, and 5600 Mbps operation supplies tens of GB/s of streaming bandwidth that complements HBM's peak rates at a fraction of the cost per gigabyte. The 1.1 V rail integrates cleanly with accelerator board power trees that already generate low-voltage silicon rails. Designers should note that x4 DDR5 requires controller-side ECC to realize full reliability, and that Sample-status qualification data (e.g., final speed-bin yields) should be confirmed with Samsung before ramping accelerator production volumes.
Được đề xuất
Industrial Computing and Edge Servers
Edge servers, industrial PCs, and factory automation controllers increasingly adopt DDR5 for its bandwidth and power efficiency. The K4RCH046VM-2CCM provides 32Gb per chip, letting compact edge motherboards reach 16 GB to 64 GB with a handful of components, preserving board area for I/O and security silicon. Its 1.1 V operation reduces heat in fanless or sealed enclosures, though the 0 to 85 C commercial range means extended-temperature (down to -40 C) deployments need an industrial-grade DDR5 variant or thermal management to keep the DRAM junction within spec. The x4 organization supports the lockstep or ECC modes common in industrial controllers, improving uptime in unattended remote installations.
Được đề xuất
Consumer Electronics and Smart Home Hubs
Premium smart-home hubs, NAS devices, and media servers use DDR5-class memory for multi-stream video transcoding and on-device AI. The K4RCH046VM-2CCM's 5600 Mbps bandwidth sustains multiple 4K streams and local AI models, while its 32Gb density allows single-chip memory configurations that shrink main-board area in compact enclosures. The 1.1 V supply supports energy-efficiency targets such as Energy Star idle-power limits. Consumer designs should note the part's Sample status and commercial 0 to 85 C range: volume consumer programs should request production-status roadmap commitments from Samsung, and enclosures must keep DRAM ambient below 85 C during sustained transcoding workloads.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4RCH046VM-2CCM — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4RHE165VB-BCWM | K4RHE086VB-BCWM | K4RAH165VP-BCWM |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) |
| Memory Generation | DDR5 | DDR5 | DDR5 | DDR5 |
| Organization | 4G x 4 | x16 (2G x 16, per part-number decode) | x8 (4G x 8, per part-number decode) | x16 (per part-number decode) |
| Supply Voltage | 1.1 V | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) |
Bảo phân biệt quan trọng
- x4 organization maximizes ECC-protected configurations (vsK4RHE165VB-BCWM)
- 32Gb density doubles per-chip capacity versus 16Gb DDR5 (vsK4RHE086VB-BCWM)
- DDR5 power efficiency at 1.1 V (vsK4A8G085WB (DDR4))
Ghi chú thiết kế
DDR5 requires a dedicated 1.1 V PMIC; per the DDR5 standard the power management IC typically resides on the memory module converting 5 V to the core rail with I2C/I3C telemetry for host-side monitoring. Provide low-ESR bulk capacitance near the DRAM VDD balls and follow Samsung's DDR5 layout guideline for VDDQ decoupling. Because the K4RCH046VM-2CCM is at Sample status, confirm final IDD specs in the production datasheet before closing the power budget - estimated derating of 10-15% on early IDD figures is a common precaution.
At 5600 Mbps, DDR5 DQ and DQS traces require controlled impedance (JEDEC ODT settings per the controller vendor), length matching within spec skew windows, and reference-plane continuity under every signal group. Route fly-by command/address with the DDR5 topology and apply the read/write leveling training defined by the memory controller. Simulate eye diagrams at the fastest speed bin and at corner voltage (1.1 V +/-5%) before tape-out of a new DIMM or board design.
Three frequent mistakes with new-generation DRAM: (1) assuming x4 and x8 DDR5 chips share the same ball map - the data-pin assignment differs, so K4RHE086VB (x8) is not footprint-identical in function to this x4 part without datasheet verification; (2) overlooking that Sample-status parts may carry early die revisions with different SPD/timing tables; (3) ignoring on-die ECC behavior in DDR5, which changes RAS characteristics versus DDR4. Always lock the die revision and request a PCN/notification program from Samsung before production.
Thông tin tuân thủ
No compliance data present in the verified web data for this MPN; verify against the official Samsung datasheet and Samsung's environmental reports.
