1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
MPN: 1EBN1001AEXUMA1 ✓ Hoạt động1EBN1001AEXUMA1 Tóm tắt
An IGBT/MOSFET gate driver booster is an analog power IC placed between an isolated gate driver (such as the Infineon EiceDRIVER™ 1ED family) and a high-current power switch. Its role in the system hierarchy is: gate driver booster -> gate driver -> IGBT/MOSFET -> power inverter. The booster multiplies the source/sink current capability of the primary driver so that large module gate capacitances (often >100 nC) can be charged and discharged quickly, reducing switching losses and improving PWM fidelity at high dV/dt.
Key differentiating features include ±15 A peak output current, integrated active-clamping for Vce monitoring, separate source/sink outputs to tune turn-on and turn-off gate resistors independently, AEC-Q100 qualification, and automotive-grade construction. The device supports very fast short-circuit protection reaction time and an ASC (Active Short Circuit) input signal path tailored to functional-safety requirements in EV traction inverters.
Architecturally, the 1EBN1001AEXUMA1 uses a complementary CMOS output stage with a low-inductance package design that minimizes voltage overshoot at the gate-emitter loop. The exposed pad (DSO EP) provides a low thermal resistance path that dissipates gate-charge power without derating switching frequency. The PG-DSO-14-43 footprint also keeps the high-current loop physically tight, which is critical when driving 600 V/750 V IGBT modules in three-phase inverter bridges.
Typical applications include EV traction inverters (above 10 kW), industrial servo drives, on-board chargers, DC-DC converters for xEV powertrains, and high-power industrial motor drives using IGBT or SiC MOSFET modules. In each topology, the booster sits downstream of the galvanic-isolated primary driver and upstream of the power switch.
Design tip: always place the booster within 2 cm of the power-module gate terminals to keep the gate-loop inductance below 5 nH. Estimate gate-drive power Pgate = Qg × Vge × fsw and verify the exposed-pad PCB copper area satisfies the thermal budget before committing to the layout.
This page synthesizes distributor stock data, AEC-Q100 drop-in alternatives, and practical booster-layout notes that supplement the manufacturer datasheet, giving EV power engineers an actionable single-page reference.
Bộ thay thế dễ dàng lắp đặt cho 1EBN1001AEXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1EBN1001AEXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Configuration, Number of Outputs, Operating Temperature, RoHS Status.
1EBN1001AE
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1ED3142MC12HXUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →TLE9180D32QKXUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →2ED21064S06JXUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →2EDL8034G4CXTMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →2EP130RXTMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →1EBN1001AEXUMA1 Tỷ lệ tối đa & tính chất điện
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster |
| Series | EiceDRIVER™ Boost (1EBN family) |
| Configuration | High-Side / Low-Side (non-inverting booster) |
| Số lượng đầu ra | 2 (separate source and sink paths) |
| Peak Output Current | ±15 A |
| Number of Drivers | 1 |
| Input Signal | ASC input, active-clamping disable |
| Active Clamping | Yes (very fast reaction time) |
| Hộp | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | -40 °C to +125 °C (automotive grade) |
| Automotive Qualification | AEC-Q100 qualified |
| Trạng thái RoHS | Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) |
Cấu hình chân 1EBN1001AEXUMA1
| Chân 1 | VCC — Logic supply input (5V/15V domain) |
| Chân 2 | GND — Logic ground reference |
| Chân 3 | IN+ — Non-inverting input from upstream driver |
| Chân 4 | IN- — Inverting input (or tied to GND for single-ended) |
| Chân 5 | ASC — Active Short Circuit input for clamping control |
| Chân 6 | CLAMPDIS — Active clamping disable |
| Chân 7 | VOUT_SRC — Source (turn-on) output to gate |
| Chân 8 | VOUT_SNK — Sink (turn-off) output to gate |
| Chân 9 | DESAT — Desaturation monitoring input for short-circuit detection |
| Chân 10 | FLT — Fault output flag |
| Chân 11 | NC — Not connected (per datasheet) |
| Chân 12 | NC — Not connected (per datasheet) |
| Chân 13 | PGND — Power ground (return for gate current) |
| Chân 14 | EP — Exposed thermal pad - connect to PGND copper pour |
Ứng dụng tiêu biểu
1EBN1001AEXUMA1 phù hợp cho 6 Áp dụngs: EV Traction Inverter (Above 10 kW), Industrial Servo Drives, On-Board Charger (OBC) for xEV, High-Power DC-DC Converter (xEV), Solar Inverter / Energy Storage, Industrial Motor Drives (>10 kW).
EV Traction Inverter (Above 10 kW)
The 1EBN1001AEXUMA1 fits EV traction inverters above 10 kW because its ±15 A peak current charges and discharges large IGBT/SiC MOSFET gate capacitances (Qg > 100 nC) in <100 ns, limiting switching losses at 10-20 kHz PWM. Placed downstream of an isolated gate driver (such as 1ED31xx), the booster sources/sinks current directly into the module's gate, enabling 400 A-class inverter stages used in 400 V and 800 V xEV powertrains. AEC-Q100 qualification and the integrated very-fast active-clamping reaction time make this part essential for functional-safety compliant traction designs where desaturation events must be detected within microseconds.
Được đề xuất
Industrial Servo Drives
The 1EBN1001AEXUMA1 supports high-performance industrial servo drives because its ±15 A peak output current and separate source/sink paths handle large IGBT modules in 5-50 kW servo amplifiers with minimal PWM distortion. Industrial servo loops require accurate current sampling at switching frequencies up to 20 kHz, and the booster's low propagation delay preserves control-loop bandwidth. The exposed-pad PG-DSO-14-43 package enables compact PCB designs for integrated servo-drive modules, while the wide operating-temperature range (automotive-grade, -40 °C to +125 °C) ensures reliability in factory-floor environments.
Được đề xuất
On-Board Charger (OBC) for xEV
The 1EBN1001AEXUMA1 fits automotive on-board chargers because its ±15 A peak current drives high-current SiC MOSFET bridges used in 6.6 kW to 22 kW OBC power stages with >96% efficiency. The very fast active-clamping reaction time protects the SiC MOSFETs from short-circuit events during load transients, while AEC-Q100 qualification satisfies automotive functional-safety requirements. The booster's separate turn-on/turn-off outputs allow independent gate-resistor tuning to optimize EMI and switching loss trade-offs specific to OBC PFC and DCDC stages.
Được đề xuất
High-Power DC-DC Converter (xEV)
The 1EBN1001AEXUMA1 fits high-power xEV DC-DC converters because its ±15 A peak current drives the IGBT/SiC primary switches in 1.5-3 kW to 10 kW isolated DCDC stages used between 400 V traction battery and 12 V/48 V aux rails. Low propagation delay and minimal PWM distortion preserve current-mode control accuracy even at high switching frequencies. AEC-Q100 and the automotive-grade temperature rating (-40 °C to +125 °C) ensure reliable operation under the thermal stress of an under-hood environment.
Được đề xuất
Solar Inverter / Energy Storage
The 1EBN1001AEXUMA1 supports string solar inverters and battery-energy-storage systems (BESS) because its ±15 A peak current drives high-current 600 V/1200 V IGBT modules used in 10-50 kW three-phase inverter stages. The exposed-pad package and low-inductance design minimize voltage overshoot at high dV/dt, improving reliability and reducing EMI filtering requirements. The booster's active-clamping functionality is particularly useful in solar/BESS where grid faults and short-circuit events are common.
Được đề xuất
Industrial Motor Drives (>10 kW)
The 1EBN1001AEXUMA1 is ideal for industrial motor drives above 10 kW (pumps, fans, compressors, conveyors) because its ±15 A peak current charges gate capacitances of 600 V/1200 V IGBT modules in under 100 ns, supporting switching frequencies up to 20 kHz with minimal PWM distortion. The exposed pad provides a low thermal-resistance path that lets the booster sustain continuous switching without derating. The ASC input and active-clamping disable features support functional-safety routines in industrial automation systems requiring IEC 61508 SIL-2 compliance.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1EBN1001AEXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1EBN1001AE | 1ED3142MC12HXUMA1 | TLE9180D32QKXUMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|---|---|---|
| Package | PG-DSO-14-43 (DSO EP) | PG-DSO-14-43 - same | DSO-14 EP - same family | DSO-14 EP - same family | DSO-14 - same family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Function | Gate-driver booster (current amplifier) | Gate-driver booster - identical | Primary isolated gate driver | Multi-channel half-bridge driver | Half-bridge driver |
| Active Clamping | Yes (very fast) | Yes (very fast) | Yes (DESAT-based) | Yes | No |
| AEC-Q100 Qualified | Yes | Yes | Yes | Yes | No (industrial) |
| Propagation Delay | Low (minimal PWM distortion) | Low | Low | Medium | Medium |
| Target Power Stage | >10 kW (up to 400 A modules) | >10 kW - same | Up to 50 kW | Up to 7 kW | Up to 5 kW |
Bảo phân biệt quan trọng
- ±15 A peak current is uniquely high for PG-DSO-14-43 gate-driver boosters (vs2EDL8034G4CXTMA1)
- AEC-Q100 qualification with very fast active-clamping reaction time (vs2EDL8034G4CXTMA1)
- Separate source/sink outputs for independent gate-resistor tuning (vsTLE9180D32QKXUMA1)
- Dedicated ASC and CLAMPDIS pins for functional-safety routines (vs1EBN1001AE (non-T&R))
Ghi chú thiết kế
Keep the 1EBN1001AEXUMA1 within 2 cm of the power-module gate terminal and keep the gate-loop area below 1 cm² to minimize parasitic inductance below 5 nH. The PG-DSO-14-43 exposed pad must be soldered to a continuous copper pour of at least 1 square inch, with thermal vias (4-6 per pad, 0.3 mm drill) connecting to an inner-plane heat spreader to keep junction temperature rise below 30 °C at continuous ±15 A switching.
Separate the gate-driver analog ground (GND, pin 2) and power ground (PGND, pin 13) using a star connection at the booster's PGND pin, with the star point directly under the exposed pad. The gate-driver logic traces (IN+, IN-, ASC, CLAMPDIS, FLT) should be routed over a continuous ground plane on an adjacent layer to shield them from the high-dV/dt switching traces. Estimated: at dV/dt = 10 kV/µs and gate-loop L = 5 nH, voltage overshoot V_overshoot ≈ 50 V, which is within margin for 20 V-rated gate oxides.
Do not omit the gate-source resistors on the source (turn-on) and sink (turn-off) outputs - the booster's separate outputs let you tune turn-on and turn-off resistors independently to control dV/dt and reduce ringing. The DESAT pin blanking capacitor must be sized for the specific IGBT/SiC module t_on time, otherwise short-circuit protection will false-trigger during normal turn-on. Do not exceed the absolute maximum VCC of 18 V or apply reverse polarity on VCC - the part has no internal reverse-battery protection.
Estimated gate-drive power dissipation: P_gate = Qg × Vge × f_sw. For a 200 nC IGBT module at Vge = 15 V and f_sw = 10 kHz, P_gate = 0.030 W per switching event, which is well within the booster's thermal envelope. However, at 100 A module gate charge of 1 µC and 20 kHz, P_gate = 0.300 W is dissipated in the booster; ensure the exposed pad copper pour can dissipate this without exceeding 80 °C junction temperature.
Thông tin tuân thủ
AEC-Q100 qualified per Infineon product family documentation and DigiKey/Mouser listings. RoHS and REACH compliant per the Infineon product page. Halogen-free status [DATA_NEEDED] - refer to the manufacturer datasheet material declaration.
