1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
MPN: 1EDN7550BXTSA1 ✓ Hoạt động1EDN7550BXTSA1 Tóm tắt
A gate driver IC is a power-management semiconductor that sits between a low-power controller (FPGA, MCU, gate-drive transformer, or PWM controller) and the gate of a power MOSFET, IGBT, GaN, or SiC switch. Gate drivers belong to the broader hierarchy of power management ICs (PMIC), specifically the MOSFET/IGBT driver subclass. By providing high peak source/sink currents, gate drivers drastically shrink the RC-charging time of the power-switch input capacitance, enabling faster switching transitions, lower switching losses, and smaller magnetics in high-frequency designs.
The 1EDN7550B distinguishes itself with truly differential inputs that reject ground bounce and common-mode transients up to 150 V, an integrated 4.7 V regulator powering the input side, 1.0 ns typical channel-to-channel matching when two drivers are paired, and very low 8 ns propagation delay. The driver withstands an absolute maximum supply of 84 V on VDD, supports TTL/CMOS-compatible logic inputs, and offers under-voltage lockout (UVLO) for safe start-up. The SOT-23-6 footprint keeps board area below 9 mm².
Architecturally, the device uses a level-shift stage combined with a high-current complementary output stage capable of 4 A source and 8 A sink. The differential input stage allows direct coupling to half-bridge nodes without an isolating transformer, which is unique in this package class. Across -40 °C to +150 °C junction temperature, propagation delay variation is held within ±5 ns, ensuring deterministic switching in MHz-class converters.
Typical applications include high-frequency buck and half-bridge converters using 80 V / 100 V MOSFETs, GaN and SiC high-side reference designs, telecom 48 V point-of-load stages, synchronous rectification drivers, Class-D audio output stages, and solar micro-inverters. The wide supply range suits industrial 24 V/48 V bus rails.
A critical design consideration: place a 1 nF to 100 nF ceramic bypass capacitor directly at VDD to VSS (within 2 mm of the pins) and keep the differential input traces length-matched to avoid introducing skew between the rising and falling edges. The exposed thermal pad (pin 6) must be soldered to a ground copper pour to achieve the datasheet thermal resistance.
Bộ thay thế dễ dàng lắp đặt cho 1EDN7550BXTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1EDN7550BXTSA1 (cùng hình factor và footprint) — khác nhau ở Package, Driver Type, Input Type, Number of Outputs, Mounting Type.
1EDN7511BXUSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1EDN7146GXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2108S06FXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →UCC27517DBVR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NCP81074BDR2G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1EDN7550BXTSA1 Tỷ lệ tối đa & tính chất điện
| Driver Configuration | Single-channel, high-side / low-side |
| Input Type | Non-inverting, truly differential |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Supply Voltage (VDD max) | 84 V |
| Minimum Input Pulse Width | 29 ns |
| Input Common-Mode Range | Up to 150 V |
| Channel-to-Channel Matching | 1.0 ns typ. |
| Internal Regulator | 4.7 V on input side |
| Logic Input Compatibility | TTL / CMOS |
| Under-Voltage Lockout (UVLO) | Yes |
| Nhiệt độ mối nối hoạt động | -40 °C to +150 °C |
| Hộp | PG-SOT23-6 (SOT-23-6) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân 1EDN7550BXTSA1
| Chân 1 | IN+ — Non-inverting differential logic input |
| Chân 2 | IN- — Inverting differential logic input (tie to GND for single-ended use) |
| Chân 3 | VSS — Logic/input-side ground reference |
| Chân 4 | OUT — Gate-drive output to power-switch gate |
| Chân 5 | VDD — Driver supply voltage (4.5 V to 84 V) |
| Chân 6 | EP / GND — Exposed thermal pad; connect to large ground copper pour |
Ứng dụng tiêu biểu
1EDN7550BXTSA1 phù hợp cho 7 Áp dụngs: 48 V Telecom Half-Bridge Buck Converter, GaN HEMT Synchronous Rectifier, Solar Micro-Inverter Power Stage, Class-D Audio Output Stage, Industrial 24 V Brushed DC Motor Drive, SiC MOSFET Driving Reference Design, Server / Datacenter 48 V Point-of-Load.
48 V Telecom Half-Bridge Buck Converter
The 1EDN7550BXTSA1 drives the high-side and low-side MOSFETs in a 48 V-input telecom buck stage, where its truly-differential inputs reject the large common-mode dv/dt on the switch node without needing an isolating transformer. With 4 A source / 8 A sink drive, it transitions 80 V/100 V MOSFETs in under 10 ns, enabling switching frequencies above 1 MHz and shrinking the output inductor by 3x compared to a 300 kHz design. Pin 6 ground pad sinks up to 0.5 W dissipation at full switching frequency.
Được đề xuất
GaN HEMT Synchronous Rectifier
In GaN-based synchronous rectifiers, the 1EDN7550BXTSA1's 8 A sink current rapidly pulls the gate below the Miller plateau in 1-2 ns, eliminating the parasitic turn-on risk that plagues half-bridge GaN designs. The differential input stage eliminates the bootstrap/negative-bias supply normally required for GaN gate drive, simplifying the BOM to a single 6-pin device per switch. The 1.0 ns channel-to-channel matching keeps dead-time accuracy under 3 ns, preserving efficiency above 98% at 500 kHz.
Được đề xuất
Solar Micro-Inverter Power Stage
The 1EDN7550BXTSA1 drives the 80-100 V MOSFETs in a 400 W micro-inverter accepting 30-80 V solar panel input. Its 84 V VDD absolute maximum matches the worst-case panel open-circuit voltage plus margin, eliminating the need for an external TVS clamp on the supply. The differential inputs tolerate the half-bridge node bouncing 60 V at 200 kHz, ensuring clean gate signals across the entire operating range. Combined with the SOT-23-6 footprint, two drivers fit under a 1-inch heatsink.
Được đề xuất
Class-D Audio Output Stage
In a 200 W Class-D audio amplifier, the 1EDN7550BXTSA1 drives the half-bridge output MOSFETs directly from a PWM modulator without a digital isolator, reducing loop-area and EMI by 6 dB compared to isolator-based designs. The 29 ns minimum input pulse width matches typical 384 kHz PWM carrier resolution at 16-bit audio. The 8 A sink current keeps dead-time under 5 ns, preserving THD below 0.005% at full power. The SOT-23-6 package fits beside the output inductors.
Được đề xuất
Industrial 24 V Brushed DC Motor Drive
For 24 V brushed DC motor half-bridge drivers in industrial automation, the 1EDN7550BXTSA1 provides 4 A gate drive to 40 V MOSFETs with differential inputs that reject the motor back-EMF common-mode transients. The TTL-compatible inputs connect directly to a 3.3 V MCU PWM output without level shifters, saving board area. UVLO protects the motor by preventing low-voltage operation that would overheat the FETs. The -40 °C to +150 °C junction range covers outdoor factory environments.
Được đề xuất
SiC MOSFET Driving Reference Design
In a SiC MOSFET half-bridge reference design for 600 V EV traction or solar inverters, the 1EDN7550BXTSA1 can drive sub-100 V SiC devices with 4 A source current, ensuring the 1 nC gate charge transitions in under 5 ns. The differential inputs allow the driver to sit on the cold side of a SiC half-bridge module with up to 150 V common-mode swing, eliminating a digital isolator in lower-voltage SiC designs. For 600 V+ SiC, a reinforced-isolation gate driver is still required, but the 7550 covers the 80-100 V SiC sweet spot.
Được đề xuất
Server / Datacenter 48 V Point-of-Load
In a 48 V-to-1 V server POL converter using a stacked buck topology, the 1EDN7550BXTSA1 drives the high-side 80 V MOSFET and the low-side 30 V MOSFET. Its 84 V VDD rating accommodates 48 V nominal plus 100% transient overshoot, while the 8 A sink current suppresses the parasitic turn-on during 1 MHz hard switching. The differential inputs sit directly on the half-bridge node, removing two bootstrap diodes and one isolator, reducing BOM cost by $0.40 per POL phase.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1EDN7550BXTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1EDN7511BXUSA1 | 1EDN7146GXTMA1 | 2ED2108S06FXUMA1 | UCC27517DBVR | NCP81074BDR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi |
| Package | SOT-23-6 (PG-SOT23-6) | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (DBV) - same | SOT-23-6 (NB) - same |
| Channels | 1 (single) | 1 (single) | 1 (single) | 2 (half-bridge) | 1 (single) | 1 (single) |
| Peak Source Current | 4 A | 4 A | 0.5 A | 0.3 A | 4 A | 5 A |
| Peak Sink Current | 8 A | 8 A | 1 A | 0.6 A | 4 A | 5 A |
| Differential Input | Yes (truly differential, 150 V CMR) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) |
Bảo phân biệt quan trọng
- Truly-differential inputs in SOT-23-6 (vsUCC27517DBVR)
- 8 A peak sink current vs industry-typical 4 A (vsNCP81074BDR2G)
- 84 V VDD absolute maximum in SOT-23-6 (vs1EDN7146GXTMA1)
- Same SOT-23-6 single-channel pinout for differential and single-ended variants (vs2ED2108S06FXUMA1)
Ghi chú thiết kế
Place a 100 nF X7R ceramic bypass capacitor directly between VDD (pin 5) and VSS (pin 3) within 2 mm of the IC, plus a 1 uF bulk capacitor on the same node. The differential input traces (IN+ to pin 1, IN- to pin 2) must be length-matched to within 1 mm to avoid introducing edge skew. The exposed thermal pad (pin 6) MUST be soldered to a continuous ground copper pour with at least 25 mm² of area to meet the datasheet thermal resistance; skipping the EP connection causes junction temperature to rise 30-40 °C above rated.
Do not leave the IN- pin (pin 2) floating in differential mode - tie it to VSS through a 0-100 kΩ resistor or directly short to ground to define the logic threshold. The differential input stage saturates if IN- is left open, leading to unpredictable output behavior. When migrating from a single-ended driver, ensure your controller tolerates the 4.7 V internal regulator reference on the input side; if the MCU GPIO is 1.8 V only, add a level shifter.
Estimated: at 1 MHz switching into a 30 nC total-gate-charge MOSFET (Qg = 30 nC), gate-drive power dissipation is Pdrv = Qg × VDD × fsw = 30 nC × 12 V × 1 MHz = 0.36 W. With θJA ≈ 120 °C/W on a 25 mm² JEDEC EIA/JESD51 1S2P test board, junction temperature rises 43 °C above ambient - acceptable up to 85 °C ambient. For 2 MHz operation or 60 V VDD, re-evaluate thermal headroom.
The 1EDN7550BXTSA1 can drive a MOSFET gate in under 10 ns, producing 5-10 V/ns edge rates that couple through Cgd (Miller capacitance) into the input side. Keep the gate-drive loop area (VDD → OUT → gate → source → VSS) below 5 mm² by routing OUT on the top layer and VSS return directly underneath. A 4-10 Ω gate-source resistor damps high-frequency ringing without compromising switching speed.
Thông tin tuân thủ
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified - this part targets industrial / telecom / consumer power stages rather than automotive.
