2EDR8258XXUMA1 - 5A/9A Isolated Gate Driver, 5.7kV | Infineon
MPN: 2EDR8258XXUMA1 ✓ Hoạt động2EDR8258XXUMA1 Tóm tắt
An isolated gate driver is a semiconductor device that provides both level shifting and galvanic isolation between a low-voltage control circuit (such as a microcontroller or PWM controller) and the gate of a high-voltage power transistor. Isolated gate drivers belong to the broader category of gate drivers, which in turn sit within power management ICs and isolated interface ICs. The isolation barrier protects low-voltage logic from hazardous high-voltage transients and allows the gate driver to float at the source potential of the high-side switch in a half-bridge, eliminating the need for bootstrap or charge-pump level shifters.
Key features include a wide driver supply range of 8 V to 20 V, undervoltage lockout (UVLO) for both VCC and VBS rails, integrated dead-time control to prevent shoot-through, short-circuit protection via DESAT, and an enable/shutdown pin for safe sequencing. The 5 A source and 9 A sink asymmetric drive strength is optimized to supply the large initial gate charge needed to switch wide-bandgap power devices rapidly while holding the on-state gate voltage firmly to prevent parasitic turn-on. The 38 ns propagation delay and tight part-to-part matching minimize dead-time loss in high-frequency converter designs.
The device is built on Infineon's high-voltage BCD process and uses a planar micro-transformer for the isolation channel, achieving >100 kV/µs CMTI and 5.7 kVrms continuous isolation per IEC 60747-17. Internal logic provides non-inverting inputs, interlocking to prevent both outputs being high, and a programmable fault clear time. The PG-DSO-14 package has an exposed pad that ties to the IC substrate and must be soldered to a grounded copper island for thermal dissipation and to maintain the rated creepage/clearance.
Typical applications include industrial SMPS, solar string inverters, UPS systems, EV onboard chargers, and motor drives where reinforced isolation is required by safety standards such as IEC 61800-5-1. The high CMTI and short propagation delay make it especially suitable for driving SiC MOSFETs in 100 kHz+ converters and for IGBT modules in three-phase inverter stages.
When designing with this part, place a 1 µF X7R bypass capacitor as close as possible to VCC and VBS pins and use a 4.7 µF to 10 µF bulk capacitor on the secondary-side driver supply. The exposed pad must be soldered to a sufficient copper area (>=25 mm² on a 4-layer PCB) to stay within thermal limits. Maintain at least 8 mm creepage on the PCB surface between primary and secondary sides to preserve the reinforced isolation rating.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon EiceDRIVER family and pin-compatible equivalents, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho 2EDR8258XXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 2EDR8258XXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Number of Outputs, Product Type, Operating Temperature Range, Isolation Technology.
2EDR9258XXUMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
2EDR8259XXUMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
2EDB7259KXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3142MC12HXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3124MC12HXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1EDN7136UXTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDN7434RXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDR8258XXUMA1 Tỷ lệ tối đa & tính chất điện
| Product Type | Isolated single-channel gate driver |
| Isolation Technology | Magnetic (coreless transformer) coupling |
| Number of Channels | 1 |
| Số lượng đầu ra | 2 (high-side and low-side, half-bridge) |
| Peak Source Current | 5 A |
| Peak Sink Current | 9 A |
| Galvanic Isolation (rms) | 5700 Vrms |
| Galvanic Isolation (peak) | 8000 Vpk |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Propagation Delay (typical) | 38 ns |
| Driver Supply Voltage (VCC, VBS) | 8 V to 20 V |
| Input Supply Voltage (VDD) | 3 V to 5.5 V |
| Khoảng nhiệt độ hoạt động | -40 °C to +125 °C |
| Hộp | PG-DSO-14 (14-pin) |
| Protection Features | UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection |
| Logic Input | Non-inverting, CMOS compatible |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân 2EDR8258XXUMA1
| Chân 1 | VDD — Input-side supply voltage (3 V to 5.5 V) |
| Chân 2 | IN+ — Non-inverting PWM input |
| Chân 3 | IN- — Inverting PWM input (tie to VDD if unused) |
| Chân 4 | EN/RST — Enable input / fault clear |
| Chân 5 | GND1 — Input-side ground |
| Chân 6 | VCC — Output-side driver supply (8 V to 20 V) |
| Chân 7 | GND2 — Output-side ground |
| Chân 8 | DESAT — Desaturation detection input |
| Chân 9 | VBS — High-side floating supply |
| Chân 10 | VS — High-side floating supply return |
| Chân 11 | LO — Low-side gate drive output |
| Chân 12 | NC — Not connected (per datasheet) |
| Chân 13 | HO — High-side gate drive output |
| Chân 14 | EP — Exposed pad (substrate, tie to GND2) |
Ứng dụng tiêu biểu
2EDR8258XXUMA1 phù hợp cho 6 Áp dụngs: Industrial Motor Drives, Solar String Inverters, EV Onboard Chargers, Uninterruptible Power Supplies (UPS), SiC MOSFET Drive in Telecom Rectifiers, Industrial Welding Equipment.
Industrial Motor Drives
The 2EDR8258XXUMA1 is well-suited for industrial motor drives where reinforced isolation is required between the low-voltage MCU and the IGBT power stage. Its 5700 Vrms isolation and 150 V/ns CMTI allow the driver to sit directly above the IGBT module in three-phase inverter designs, with no optocoupler or bootstrap needed. The 5 A source / 9 A sink drive strength can switch 600 V/1200 V IGBT modules up to 50 A class at 20 kHz PWM. Compared to gate-drive transformers, the integrated UVLO, DESAT, and dead-time control reduce BOM count and PCB area. Reference companion ICs: IR2304SPBF (three-phase controller), TLE92633BQXXUMA2 (system basis chip).
Được đề xuất
Solar String Inverters
In solar string inverter topologies the 2EDR8258XXUMA1 drives the IGBTs of the boost stage and the full-bridge inverter with reinforced isolation per IEC 62109. The 8-20 V driver supply range accepts both 12 V and 15 V rails commonly derived from auxiliary windings of the main transformer. Its DESAT short-circuit protection detects IGBT desaturation within 2 µs and shuts down the output, protecting the inverter from module-level faults. The exposed pad of the PG-DSO-14 package must be soldered to a grounded copper island of at least 25 mm² to maintain thermal and isolation performance. Companion parts include IPW60R037P7XKSA1 (CoolMOS) and IPD65R380E6ATMA1 (high-voltage MOSFET).
Được đề xuất
EV Onboard Chargers
The 2EDR8258XXUMA1 fits onboard charger (OBC) designs for electric vehicles where reinforced isolation between the HV battery domain and the 12V/LV domain is mandatory per IEC 61851 and ISO 17409. Its 5700 Vrms isolation withstands the high-voltage transients of 400V and 800V battery architectures. The 38 ns propagation delay supports switching frequencies up to 250 kHz used in modern totem-pole PFC and CLLC topologies, minimizing magnetic component size. The enable/shutdown pin enables functional safety implementation per ISO 26262 by allowing the MCU to disable gate drive within microseconds. Companion: TLE82422LXUMA2 (LIN transceiver), IPB60R280P7ATMA1 (primary MOSFET).
Được đề xuất
Uninterruptible Power Supplies (UPS)
In double-conversion UPS systems the 2EDR8258XXUMA1 drives the IGBTs of the PFC front-end and the inverter output stage. Its integrated dead-time control prevents shoot-through in the half-bridge during load transients, while UVLO ensures the IGBTs do not operate in their linear region at low VCC voltages. The asymmetric 5A source / 9 A sink current is tailored for IGBT modules in the 50-200 A range, and the device can operate at switching frequencies from 16 kHz (audible-noise-sensitive) to 50 kHz (compact designs). The reinforced isolation eliminates optocouplers and reduces gate-driver power consumption compared to bootstrap solutions.
Được đề xuất
SiC MOSFET Drive in Telecom Rectifiers
The 2EDR8258XXUMA1 is a good match for SiC MOSFET-based telecom rectifiers operating at 100 kHz+ switching frequencies. Its 150 V/ns CMTI easily handles the 50-100 V/ns dV/dt of typical SiC switches, and the 38 ns propagation delay minimizes dead-time loss in totem-pole bridgeless PFC stages. The 9 A sink current is critical to contain SiC's high turn-off dV/dt and prevent parasitic turn-on from Miller coupling. The exposed pad provides sufficient thermal dissipation for continuous 5 A operation at switching frequencies up to 200 kHz. Reference companion parts: IAUC60N04S6L030HATMA1 (40V SiC MOSFET), TLD5097EPXUMA1 (LED driver for status).
Được đề xuất
Industrial Welding Equipment
In inverter-based welding power supplies the 2EDR8258XXUMA1 drives the IGBTs of the primary-side full bridge operating from rectified 400-700 V DC bus. The reinforced 5700 Vrms isolation satisfies the safety requirements of IEC 60974-1 for arc welding equipment. Its DESAT protection detects short-circuit faults within microseconds, critical for welding where arc strikes can cause IGBT module failures. The wide 8-20 V driver supply accommodates auxiliary supplies that vary widely during welding transients. The 5 A peak source current drives IGBT modules up to 600 A class. Reference companion: TLF44773LAXUMA1 (voltage regulator).
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 2EDR8258XXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 2EDR9258XXUMA1 | 2EDR8259XXUMA1 | 2EDB7259KXUMA1 | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-14 | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | DSO-14 - same | DSO-14 - same |
| Isolation Voltage (rms) | 5700 Vrms | 5700 Vrms | 5700 Vrms | 1200 Vrms (functional) | 1200 Vrms | 1200 Vrms |
| Peak Source Current | 5 A | 10 A | 6 A | 5 A | 3 A | 4 A |
| Peak Sink Current | 9 A | 14 A | 10 A | 9 A | 6 A | 8 A |
| CMTI | 150 V/ns | 150 V/ns | 150 V/ns | 100 V/ns | 100 V/ns | 100 V/ns |
| Propagation Delay | 38 ns | 38 ns | 38 ns | 45 ns | 55 ns | 55 ns |
| Driver Supply Range | 8 V to 20 V | 8 V to 20 V | 8 V to 20 V | 8 V to 17 V | 10 V to 20 V | 10 V to 20 V |
| DESAT Protection | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Highest CMTI in the 5A-class driver segment (vs1ED3142MC12HXUMA1)
- Highest sink current for fast turn-off (vs2EDR9258XXUMA1)
- Reinforced isolation in PG-DSO-14 (vs2EDB7259KXUMA1)
- Cost-optimized within EiceDRIVER portfolio (vs2EDR8259XXUMA1)
Ghi chú thiết kế
Decouple the VCC and VBS pins with a 1 µF X7R ceramic capacitor placed within 2 mm of each pin, and add a 4.7 µF to 10 µF bulk capacitor on the secondary-side supply. The bootstrap capacitor on VBS-VS must be sized to deliver the gate charge Qg of the high-side switch plus 30% margin: Cboot >= Qg_total / (VCC - UVLO_release). For a typical 600V/50A IGBT with Qg=200 nC, a 220 nF bootstrap capacitor is the minimum; 470 nF is recommended for high-frequency switching. A series resistor (5-10 Ω) on the bootstrap path limits inrush current.
Estimated: At continuous 5 A source current and 100 kHz switching into a 50 nC gate charge, internal dissipation is approximately 0.25 W. With θJA around 80 °C/W for the PG-DSO-14 package, the junction temperature rises 20 °C above ambient. However, at high ambient temperatures (85 °C) or with sustained DESAT events, the exposed pad must be soldered to a copper island of at least 25 mm² on a 4-layer PCB to maintain junction temperature below 125 °C. Without the exposed pad soldered, thermal performance is severely compromised.
Maintain at least 8 mm creepage distance between primary-side (VDD, IN+, IN-, EN, GND1) and secondary-side (VCC, VBS, VS, HO, LO, DESAT, GND2) traces on the PCB surface. The exposed pad must be tied to GND2 on the secondary side, not to GND1, to preserve the isolation barrier. Do not run any primary-side traces under the IC package body. Place the DESAT blanking capacitor (typically 100 pF) and the DESAT resistor network within 5 mm of pin 8 to prevent false DESAT triggering from capacitive coupling.
Common mistakes include: (1) Driving inputs above VDD or below GND by more than 0.3 V, which can latch up the input structure. (2) Connecting IN- to GND when not using the inverting input - per datasheet it must be tied to VDD or logic high. (3) Omitting the UVLO bypass capacitor, causing nuisance faults during power-up. (4) Using a DESAT diode with reverse recovery time exceeding 50 ns, which causes false DESAT faults during IGBT turn-off. (5) Operating the bootstrap capacitor without a refresh path when duty cycle exceeds 95%.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications consider AEC-Q100 qualified variants in the Infineon EiceDRIVER Automotive family. Reinforced isolation per IEC 60747-17.
