2ED21084S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
MPN: 2ED21084S06JXUMA1 ✓ Hoạt động2ED21084S06JXUMA1 Tóm tắt
A half-bridge gate driver is a power-management IC that translates low-power PWM logic signals from a microcontroller into the high-current drive required to switch the gate of a half-bridge MOSFET or IGBT stage. The gate driver sits in the signal chain between the digital controller and the power switches, providing level shifting, bootstrap high-side drive, and short dead-time control. In the broader hierarchy, a gate driver belongs to power management ICs -> MOSFET/IGBT drivers -> half-bridge drivers -> level-shift gate drivers.
Key features of the 2ED21084S06JXUMA1 include 650 V high-side offset voltage, integrated bootstrap diode that eliminates an external discrete component, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delays between the high-side and low-side channels for predictable dead-time behavior. The PG-DSO-14-49 wide-body SOIC package provides 3.5 mm creepage distance and supports high-side voltages up to 650 V, simplifying PCB layout in offline and motor-drive applications.
The driver uses a ground-referenced low-side channel and a floating high-side channel with internal level shifters and a bootstrap supply structure. Source current of 0.29 A and sink current of 0.7 A allow direct drive of small-to-medium IGBTs and 600 V MOSFETs without an external buffer stage, while 100 ns/35 ns rise/fall propagation delays enable switching frequencies above 20 kHz.
Typical applications include variable-frequency motor drives, solar micro-inverters, switch-mode power supplies, induction-cooking hobs, and D-class audio amplifiers where a half-bridge topology is required. The integrated bootstrap diode reduces BOM count and PCB area in space-constrained designs.
When designing with this part, place a 1 uF ceramic bypass capacitor directly on the VCC pin and a 1 uF to 4.7 uF bootstrap capacitor between VB and VS to ensure clean high-side supply under all PWM duty cycles. Verify dead-time in the MCU firmware to avoid cross-conduction; this driver does not include built-in dead-time generation.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho 2ED21084S06JXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 2ED21084S06JXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, RoHS Status, MSL Level, Operating Temperature, Function.
2ED21064S06JXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2182S06FXUMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRS2110SPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRS2110STRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED21084S06JXUMA1 Tỷ lệ tối đa & tính chất điện
| Chức năng | Half-bridge gate driver |
| Cấu trúc | Half-bridge (high-side + low-side) |
| High-side Offset Voltage (max) | 650 V |
| VCC Supply Voltage | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.7 A |
| Propagation Delay Rise (typical) | 100 ns |
| Propagation Delay Fall (typical) | 35 ns |
| Input Logic | Non-inverting (HIN/LIN) |
| Bootstrap Diode | Integrated |
| Nhiệt độ hoạt động | -40C to +125C |
| Hộp | PG-DSO-14-49 (14-pin wide-body SOIC) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 3 |
| Trạng thái RoHS | Compliant |
Cấu hình chân 2ED21084S06JXUMA1
| Chân 1 | VCC — Low-side and logic supply voltage (10 V to 20 V) |
| Chân 2 | HIN — High-side logic input (non-inverting) |
| Chân 3 | LIN — Low-side logic input (non-inverting) |
| Chân 4 | GND — Ground reference |
| Chân 5 | LO — Low-side gate drive output |
| Chân 6 | VS — High-side floating supply return |
| Chân 7 | HO — High-side gate drive output |
| Chân 8 | VB — High-side floating supply (bootstrap) |
| Chân 9 | NC — Not connected (per datasheet) |
| Chân 10 | NC — Not connected (per datasheet) |
| Chân 11 | NC — Not connected (per datasheet) |
| Chân 12 | NC — Not connected (per datasheet) |
| Chân 13 | NC — Not connected (per datasheet) |
| Chân 14 | NC — Not connected (per datasheet) |
Ứng dụng tiêu biểu
2ED21084S06JXUMA1 phù hợp cho 7 Áp dụngs: Variable-Frequency Motor Drives, Solar Micro-Inverters, Switch-Mode Power Supplies (SMPS), Induction Cooking Hobs, D-Class Audio Amplifiers, Industrial Welding Inverters, Uninterruptible Power Supplies (UPS).
Variable-Frequency Motor Drives
The 2ED21084S06JXUMA1 fits variable-frequency motor drives because its 650 V high-side offset rating comfortably covers 400 V to 480 V AC-fed bus rails after rectification, and its 0.7 A sink current drives 600 V IGBT modules directly. Placed between the MCU PWM outputs and the half-bridge IGBT stage, the integrated bootstrap diode eliminates the discrete high-side diode, reducing BOM and PCB area. Compared to optocoupler-based drives, this driver offers 100 ns propagation delay rise enabling switching frequencies above 20 kHz for quiet motor operation, with matched channel delays for predictable dead-time control in the MCU firmware.
Được đề xuất
Solar Micro-Inverters
The 2ED21084S06JXUMA1 is well suited for solar micro-inverter half-bridge stages where compact PCB footprint and high efficiency are mandatory. Its 650 V rating provides adequate margin over 400 V maximum PV bus voltage, and the integrated bootstrap diode simplifies the high-side supply network in space-constrained micro-inverter enclosures. Used between the controller and 600 V MOSFET switches, the 0.29 A source current charges MOSFET gates efficiently while 0.7 A sink current achieves fast turn-off. The wide-body PG-DSO-14-49 package supports high-voltage PCB creepage required by IEC 62109 solar inverter safety standards.
Được đề xuất
Switch-Mode Power Supplies (SMPS)
The 2ED21084S06JXUMA1 is ideal for half-bridge and full-bridge SMPS topologies in industrial power supplies. With 650 V high-side capability and 0.7 A sink current, it directly drives 600 V MOSFETs in 380 V to 400 V rectified bus applications. Its 100 ns rise / 35 ns fall propagation delays support hard-switched half-bridge converters at 50 kHz to 200 kHz switching frequencies. The integrated bootstrap diode and matched channel delays simplify LLC and phase-shifted full-bridge designs where dead-time accuracy is critical for efficiency. Non-inverting logic inputs interface directly with digital PFC controllers and DSP-based controllers.
Được đề xuất
Induction Cooking Hobs
The 2ED21084S06JXUMA1 suits induction cooking hob half-bridge resonant converters where high switching frequency (50 kHz to 100 kHz) and 600 V blocking are mandatory. Its matched channel delays and integrated bootstrap diode reduce component count on the cooktop PCB, while the 0.7 A sink current drives IGBTs capable of multi-kilowatt pan heating. According to the Infineon datasheet, the wide-body 14-pin SOIC package provides 3.5 mm creepage distance supporting high-side voltages up to 650 V with low EMI leakage. Non-inverting inputs interface directly with digital controllers implementing soft-start and pan-detection algorithms.
Được đề xuất
D-Class Audio Amplifiers
The 2ED21084S06JXUMA1 fits D-class (Class-D) audio amplifier output stages where half-bridge topology drives the LC low-pass filter directly into the speaker. Its 100 ns rise / 35 ns fall propagation delays enable PWM switching frequencies above 250 kHz, well above the audio band, while the integrated bootstrap diode shrinks the BOM in compact consumer amplifiers. The 650 V rating supports universal-line powered designs. Matched channel delays reduce dead-time distortion, improving THD+N performance critical for high-fidelity audio reproduction. Non-inverting HIN/LIN inputs accept standard PWM from Class-D modulator DSPs.
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Industrial Welding Inverters
The 2ED21084S06JXUMA1 is suitable for compact industrial welding inverter half-bridge stages where high peak current capability and 650 V blocking are required. Its 0.7 A sink current drives welding-grade IGBTs efficiently, while the integrated bootstrap diode simplifies high-side supply in the harsh EMI environment of welding equipment. The matched channel delays support precise dead-time control for welding waveform shaping. According to the Infineon datasheet, the device's -40C to +125C operating range covers the wide thermal excursions typical of portable welding machines. Surface-mount packaging supports automated SMT assembly in volume production.
Được đề xuất
Uninterruptible Power Supplies (UPS)
The 2ED21084S06JXUMA1 fits UPS inverter stages where reliable 650 V half-bridge switching is required for battery-to-AC conversion. Its matched channel delays support zero-voltage-switching (ZVS) phase-shifted full-bridge topologies common in high-efficiency UPS designs, while the integrated bootstrap diode reduces component count on the inverter PCB. The 0.7 A sink current drives 600 V MOSFETs at the multi-kilowatt power levels required for rack-mounted UPS. The wide-body SOIC package provides the creepage distance required by IEC 62040 UPS safety standards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 2ED21084S06JXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 2ED21064S06JXUMA1 | 2ED2182S06FXUMA1 | IRS2110SPBF | IRS2110STRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-14-49 (SOIC-14 wide-body) | PG-DSO-14-49 (SOIC-14 wide-body) | DSO-14 | SOIC-14 | SOIC-14 |
| High-side Offset Voltage (max) | 650 V | 650 V | 650 V | 600 V | 600 V |
| Source Current (typical) | 0.29 A | 0.29 A | 0.36 A | 0.12 A | 0.12 A |
| Sink Current (typical) | 0.7 A | 0.7 A | 0.7 A | 0.42 A | 0.42 A |
| Propagation Delay Rise | 100 ns | 100 ns | 120 ns | 110 ns | 110 ns |
| Propagation Delay Fall | 35 ns | 35 ns | 40 ns | 60 ns | 60 ns |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No (external required) | No (external required) |
| Input Logic | Non-inverting | Non-inverting | Non-inverting | Non-inverting | Non-inverting |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
Bảo phân biệt quan trọng
- Integrated bootstrap diode eliminates external discrete (vsIRS2110SPBF)
- 650 V rating exceeds IRS2110 family 600 V (vsIRS2110SPBF / IRS2110STRPBF)
- Higher sink current for faster MOSFET turn-off (vsIRS2110SPBF)
- Matched propagation delays for predictable dead-time (vs2ED2182S06FXUMA1)
Ghi chú thiết kế
Place a 1 uF low-ESR ceramic bypass capacitor directly between VCC (pin 1) and GND (pin 4) within 5 mm of the IC pins to suppress supply ringing caused by high-side level-shift transients. Add a 100 nF ceramic in parallel for high-frequency decoupling. For the bootstrap supply, use a 1 uF to 4.7 uF ceramic capacitor between VB (pin 8) and VS (pin 6); the integrated bootstrap diode charges this capacitor on every low-side turn-on. Insufficient bootstrap capacitance causes high-side UVLO trips and PWM distortion at high duty cycles above 90%.
Estimated: at 100 kHz switching with 30 nC gate charge MOSFETs, gate-driver power dissipation is approximately P = VCC x Qg x fsw = 15 V x 30 nC x 100 kHz = 0.045 W per channel, well within the PG-DSO-14-49's 100+ C/W theta_JA capability. However, in high-side switching the level-shift quiescent draw adds 1 mW to 5 mW. The wide-body SOIC provides adequate copper-pour heat dissipation without an external heatsink for typical half-bridge designs. Verify junction temperature using the standard Pdiss x theta_JA + Tambient calculation against your switching frequency and MOSFET Qg.
Route the HIN/LIN PWM traces as short, direct microstrip lines over a continuous ground plane; keep them away from the HO/LO switching nodes to avoid capacitive coupling that injects noise into the logic inputs. The PG-DSO-14-49 wide-body package provides 3.5 mm creepage between high-side pins (HO, VB, VS) and low-side pins (VCC, GND, LO); preserve this clearance on the PCB by routing high-side traces on the top side of a cut-out area or by adding slot in the PCB between the high-side and low-side copper pours. Star-ground the GND pin back to the controller ground rather than daisy-chaining through the power-stage ground.
Do not exceed the VS transient rating of -5 V; high dv/dt switching nodes can pull VS below ground during turn-off transients. Add a 5.1 V TVS or Schottky diode between VS and GND if the PCB layout has long VS-to-switch-node traces. Also verify that VCC never drops below the UVLO threshold during startup; a soft-start RC ramp on VCC avoids false UVLO trips. Per the Infineon datasheet, this driver does NOT include built-in dead-time generation - the MCU firmware must enforce minimum dead-time (typically 200 ns to 500 ns) to prevent half-bridge cross-conduction.
Place the gate-drive resistors (typically 10 ohm to 33 ohm) within 5 mm of the HO and LO pins to dampen parasitic trace inductance that causes gate ringing and dv/dt-induced MOSFET turn-on. Use separate gate-drive resistor return paths back to the driver GND and VS pins respectively, rather than sharing the power-stage source-inductor return path. For high-frequency designs above 100 kHz, consider using a 4-layer PCB with dedicated ground and VCC planes under the driver to minimize supply inductance and reduce EMI emissions.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer power applications rather than automotive. MSL-3 moisture sensitivity per JEDEC J-STD-020.
