BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
MPN: BSC059N04LS6ATMA1 ✓ Hoạt độngBSC059N04LS6ATMA1 Tóm tắt
Key features include a 40 V drain-source breakdown voltage, 5.9 mOhm maximum RDS(on) at VGS=10 V, continuous drain current of 17 A at TA=25C (49 A at TC=25C), pulsed drain current of 59 A at TC=25C, total power dissipation of 3 W at TA=25C and 38 W at TC=25C, and an avalanche-rated body diode for rugged switching transitions. The OptiMOS 6 technology delivers improved Figure of Merit (FOM = RDS(on) x Qg) versus prior generations, enabling higher power density in switched-mode power supplies.
The OptiMOS 6 40V power MOSFET family is optimized for synchronous rectification in switched mode power supplies (SMPS) in servers, desktops, and telecom bricks, as well as for DC-DC converters, battery management systems (BMS), motor drives, and OR-ing functions. The SuperSO8 package provides an exposed pad that lowers thermal resistance to the PCB copper pour, supporting 38 W dissipation at 25C case temperature with proper board layout.
Compared to the earlier OptiMOS 5 generation, OptiMOS 6 reduces switching losses by approximately 20% through optimized gate charge (Qg) and output capacitance (Coss) characteristics, while maintaining the same 40 V voltage class. This makes the part particularly attractive for high-frequency (>300 kHz) buck and synchronous rectification stages where switching loss dominates total power dissipation.
Typical applications include synchronous rectification in server and telecom SMPS, 12 V and 24 V DC-DC point-of-load converters, hot-swap and OR-ing controllers, battery protection and load switching in BMS, and low-voltage motor drive half-bridges. The 5.9 mOhm RDS(on) minimizes conduction loss in high-current 12 V rails.
When designing with this device, keep the gate-source voltage below the 20 V VGS(max) rating and provide adequate copper pour (typically 1 in2 minimum) to keep thermal resistance within budget. Use a gate driver with sufficient source/sink current (typically >1 A peak) to fully exploit the switching speed advantage of OptiMOS 6.
Bộ thay thế dễ dàng lắp đặt cho BSC059N04LS6ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC059N04LS6ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Junction Temperature, Product Family, RoHS Status.
BSC059N04LS6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC0901NS
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ0901NS
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NTTFS015N04CL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiR580DP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC059N04LS6ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25C | 17 A |
| Continuous Drain Current (ID) at TC=25C | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | 3 W |
| Total Power Dissipation at TC=25C | 38 W |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân BSC059N04LS6ATMA1
| Chân 1 | Source — Source connection (pin 1 of SuperSO8) |
| Chân 2 | Source — Source connection (parallel with pin 1) |
| Chân 3 | Source — Source connection (parallel with pin 1) |
| Chân 4 | Gate — Gate control input |
| Chân 5 | Drain (Exposed Pad) — Drain connection - PCB thermal pad |
| Chân 6 | Source — Source connection (parallel with pin 1) |
| Chân 7 | Source — Source connection (parallel with pin 1) |
| Chân 8 | Source — Source connection (parallel with pin 1) |
Khu vực hoạt động an toàn - BSC059N04LS6ATMA1
Ứng dụng tiêu biểu
BSC059N04LS6ATMA1 phù hợp cho 6 Áp dụngs: 12V Synchronous Rectification in Server SMPS, 24V Industrial DC-DC Point-of-Load Converters, Battery Management System (BMS) Load Switching, Hot-Swap and OR-ing Controllers, Low-Voltage Motor Drive Half-Bridges, Automotive 12V Load Switching and ECU Power.
12V Synchronous Rectification in Server SMPS
The BSC059N04LS6ATMA1 is optimized for the synchronous rectification stage in 12 V server SMPS where conduction loss dominates at high secondary-side currents. Its 5.9 mOhm RDS(on) and 49 A continuous drain current at TC=25C minimize forward voltage drop across the synchronous FET, improving overall converter efficiency by 1-2% versus higher-RDS(on) alternatives. The OptiMOS 6 platform reduces Qg and Qgd by approximately 20% versus prior generations, lowering switching loss in 300-500 kZ half-bridge designs. Pair with an Infineon EiceDRIVER gate driver (e.g. 1ED44175N02B) to fully exploit the switching speed.
Được đề xuất
24V Industrial DC-DC Point-of-Load Converters
The 40 V VDS rating of BSC059N04LS6ATMA1 provides adequate headroom above 24 V nominal bus voltage while the 5.9 mOhm RDS(on) minimizes conduction loss in POL converters stepping 24 V down to 5 V, 3.3 V, or 1.8 V rails. The 49 A continuous drain current at TC=25C supports single-FET POL designs up to 25 A output. For higher-power rails above 30 A output, parallel two BSC059N04LS6ATMA1 devices; OptiMOS 6 thermal performance helps balance current sharing. The PG-TDSON-8-6 footprint is widely adopted in 24 V industrial power modules.
Được đề xuất
Battery Management System (BMS) Load Switching
In 12 V and 24 V battery management systems, the BSC059N04LS6ATMA1 functions as the low-side load disconnect switch or OR-ing FET. Its 5.9 mOhm RDS(on) keeps continuous load current loss under 10 mW at 1 A load, extending battery runtime. The 40 V VDS rating protects against inductive transients when switching motors or solenoids. Its avalanche-rated body diode handles reverse current during parallel battery connection. Use a dedicated gate driver with overcurrent protection (e.g. BQ79656 family) for automotive BMS isolation requirements.
Được đề xuất
Hot-Swap and OR-ing Controllers
The BSC059N04LS6ATMA1 is ideal for -48 V telecom OR-ing and 12 V server hot-swap applications where the FET must sustain high inrush currents during card insertion. Its 59 A pulsed drain current rating handles the capacitive charging transient of downstream bulk capacitors. The 40 V VDS class supports standard 12 V bus rails (and up to 36 V industrial). Use the MOSFET in linear mode during inrush with a controlled gate ramp for inrush current limiting, then switch fully on for minimal conduction loss.
Được đề xuất
Low-Voltage Motor Drive Half-Bridges
For 12 V and 24 V brushed DC motor half-bridges, the BSC059N04LS6ATMA1 handles continuous motor currents up to 17 A at TA=25C with proper PCB thermal design. The OptiMOS 6 low Qg enables PWM frequencies above 50 kHz for silent motor operation. Pair two BSC059N04LS6ATMA1 devices in a half-bridge with the DRV8714SQRHARQ1 gate driver to build a complete 12 V motor drive stage with up to 30 A peak current. The 5.9 mOhm RDS(on) keeps I2R losses under 5 W at 20 A continuous motor current.
Được đề xuất
Automotive 12V Load Switching and ECU Power
While BSC059N04LS6ATMA1 is not AEC-Q100 qualified, its electrical characteristics make it suitable for non-safety automotive loads such as infotainment power rails, interior lighting drivers, and ECU peripheral switches in 12 V body-control applications. The 5.9 mOhm RDS(on) and 49 A continuous drain current support high-current body loads. For safety-critical applications (airbag, ADAS), choose an AEC-Q100 qualified MOSFET instead. The PG-TDSON-8-6 footprint is widely adopted in automotive ECU designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC059N04LS6ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC059N04LS6 | BSC0901NS | BSZ0901NS | NTTFS015N04CL | SiR580DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | Power-SO8 5x6 (pin-compatible) | Power-SO8 PolarPAK 5x6 (pin-compatible) |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | Trench N-MOSFET | TrenchFET Gen IV |
| Approximate Unit Price (qty 1) | $1.85 | $1.85 (same die) | $1.50 | $1.40 | $1.95 | $2.10 |
Bảo phân biệt quan trọng
- OptiMOS 6 technology delivers best-in-class FOM (RDS(on) x Qg) (vsBSC0901NS (OptiMOS 5))
- Lowest on-resistance in 40V SuperSO8 footprint (vsSiR580DP (Vishay PolarPAK))
- High continuous drain current at TC=25C (vsNTTFS015N04CL (onsemi))
Ghi chú thiết kế
Estimated: At continuous drain current of 17 A at TA=25C (PCB-mounted with 1 in2 copper pour), the BSC059N04LS6ATMA1 dissipates approximately P=I2RDS(on) = 17^2 x 0.0059 = 1.7 W. With RthJA of approximately 50 C/W on standard JEDEC PCB, junction temperature rise is ~85C above 25C ambient, reaching 110C. Provide at least 1 square inch of top-side copper plus thermal vias to inner copper planes for full-load operation below 100C junction temperature.
The PG-TDSON-8-6 SuperSO8 package uses the central exposed pad (pin 5) as the drain terminal AND primary thermal path. The PCB land pattern must include a matching thermal pad with at least 9 thermal vias (0.3 mm drill, 1.0 mm pitch) connecting top-side copper to internal ground/drain planes. Source pins 1-3 and 6-8 should be tied together with wide copper pours to minimize parasitic source inductance, which directly impacts switching loss.
Gate-source voltage must stay within +/-20 V absolute maximum. Exceeding this (e.g. from ringing in high-dV/dt circuits) will permanently damage the gate oxide. Use a gate-source resistor (10-100 kOhm) to hold the gate off during power-up, and consider a TVS or Zener clamp on the gate for high-transient environments. Always sequence the gate drive after the drain supply is stable.
Estimated: In a synchronous buck converter at 300 kHz switching frequency with 20 A output, the BSC059N04LS6ATMA1 incurs switching loss Psw = 0.5 x VDS x ID x (trise + tfall) x fsw. Assuming 10 ns switching transitions, switching loss is approximately 0.5 x 20 x 20 x 10e-9 x 300e3 = 0.6 W. Combined with 0.5 W conduction loss, total MOSFET dissipation is approximately 1.1 W. Use Infineon's OptiMOS 6 efficiency calculator for design-specific values.
Thông tin tuân thủ
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose an AEC-Q100 part for automotive safety applications. Halogen-free status not explicitly stated in available data.
