BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSC098N10NS5ATMA1 ✓ Hoạt độngBSC098N10NS5ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in power-electronics circuits. The OptiMOS 5 family sits in the broader hierarchy of N-channel enhancement-mode MOSFETs, which in turn are part of discrete power semiconductors and the wider power-management ecosystem that includes gate drivers, DC-DC controllers, and synchronous-rectifier ICs. By combining a 100V breakdown rating with sub-10 mOhm on-resistance in a compact 5x6 mm outline, the BSC098N10NS5 family targets high-current, high-frequency converter stages where traditional planar MOSFETs would be too lossy or too large.
Key differentiating specifications of the BSC098N10NS5ATMA1 include its 100 V drain-source rating, 9.8 mOhm maximum RDS(on) at VGS=10 V, 60 A continuous drain current at Tc, a typical diode forward voltage of 0.9 V (VSD at IF=30 A), and a 240 A pulsed diode current rating. The device's reduced parasitic capacitances, particularly Coss, lower switching losses at high frequencies and reduce dead-time losses in half-bridge topologies. Its 100V rating provides ample headroom for 48V telecom rails, automotive 48V mild-hybrid systems, and industrial 24V/36V bus converters.
Architecturally, the OptiMOS 5 platform uses Infineon's latest trench-cell geometry and a refined gate-oxide process to shrink cell pitch while maintaining avalanche ruggedness and improving body-diode recovery softness. This translates directly to the 43% RDS(on) reduction and 44% output-capacitance reduction highlighted in the datasheet's headline metrics, and to a robust 100% UIS-tested design suitable for repetitive hard-switching loops. The SuperSO8 5x6 footprint also features a large exposed drain pad that doubles as a thermal pad, allowing the part to dissipate the 69 W (Tc) maximum with a properly designed PCB copper area.
Typical applications include synchronous rectification in 48V step-down (buck) and full-bridge converters for telecom and datacom equipment, secondary-side synchronous rectification in isolated DC-DC bricks for servers, motor-drive half-bridges in 24V/36V industrial and e-mobility platforms, hot-swap and OR-ing switches in redundant power systems, and low-voltage high-current power-paths in solar and battery-management systems. The 100V rating and 60A current capability also make it a strong fit for USB-PD and high-wattage adapter designs where multiple paralleled MOSFETs must be avoided to save board area.
When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the rated 9.8 mOhm on-resistance; 4.5 V VGS operation is supported but increases RDS(on) significantly. Use a Kelvin-source connection (the SuperSO8 5x6 has a dedicated source-sense pin) when the part is switching above 100 kHz, and lay out the high-di/dt loop (input cap, high-side FET, low-side FET) with minimum parasitic inductance to limit voltage overshoot and ringing.
This page synthesizes distributor pricing, parametric cross-reference data, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single source for selection, sourcing, and layout guidance on the BSC098N10NS5ATMA1.
Bộ thay thế dễ dàng lắp đặt cho BSC098N10NS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC098N10NS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, MSL Level, Part Number, Operating Temperature Range.
BSC070N10NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC097N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N10NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC360N15NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC098N10NS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm |
| Power Dissipation (Tc=25C) | 69 W |
| Power Dissipation (Ta) | 2.5 W |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) |
| Hộp | PG-TDSON-8-7 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Shipping Packaging | Tape & Reel (T/R) |
Cấu hình chân BSC098N10NS5ATMA1
| Chân 1 | Source — Source power terminal (paralleled with pins 2, 3, 7, 8) |
| Chân 2 | Source — Source power terminal |
| Chân 3 | Source — Source power terminal |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source Sense (Kelvin) — Kelvin source reference for gate drive return |
| Chân 6 | Drain — Drain power terminal (paralleled with exposed pad) |
| Chân 7 | Drain — Drain power terminal |
| Chân 8 | Drain — Drain power terminal |
Khu vực hoạt động an toàn (estimated based on 69W Tc dissipation limit)
Ứng dụng tiêu biểu
BSC098N10NS5ATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Synchronous Rectification, Secondary-Side Rectification in Isolated DC-DC, Industrial 24V/36V Motor Drive Half-Bridge, Solar MPPT / Battery Management Hot-Swap, USB-PD and High-Wattage Adapter Synchronous Buck, Automotive 48V Mild-Hybrid DC-DC.
48V Telecom Synchronous Rectification
The BSC098N10NS5ATMA1's 100 V VDS rating and 9.8 mOhm maximum on-resistance make it ideal for synchronous-rectifier MOSFETs in 48V-input step-down converters feeding telecom and datacom loads such as 12V or 5V intermediate bus converters. In a half-bridge topology the low-side FET conducts the bulk of the inductor current during freewheeling; placing this part on the low-side with a 10 V gate drive realizes the rated 9.8 mOhm RDS(on), cutting conduction loss by 43% versus the prior generation. Combined with a high-side partner FET (e.g. BSC027N10NS5ATMA1 for further loss reduction) the converter can reach 97%+ peak efficiency at 200-500 kHz switching frequency, where the 44% lower Coss of OptiMOS 5 directly reduces switching dead-time losses.
Được đề xuất
Secondary-Side Rectification in Isolated DC-DC
BSC098N10NS5ATMA1 is well suited as a synchronous rectifier on the secondary side of isolated full-bridge or forward converters in server and industrial brick supplies. The 60 A continuous rating handles the bulk output current at 12V/20A or 5V/40A rails, while the 100V breakdown covers 24V/48V nominal inputs with margin. Its 0.9 V typical body-diode forward voltage and soft reverse recovery lower dead-time induced circulating losses in self-driven synchronous-rectifier topologies. Use a dedicated SR controller or a gate-drive transformer referenced to the FET's source-sense pin (pin 5 of SuperSO8) for clean timing and to maximize efficiency.
Được đề xuất
Industrial 24V/36V Motor Drive Half-Bridge
For 24V/36V industrial motor-drive half-bridges and brushed/brushless DC motor inverters, the BSC098N10NS5ATMA1's 100V breakdown gives ample headroom for back-EMF spikes from inductive loads, while its 60A rating handles peak motor currents up to several kW. The 69 W (Tc) power dissipation capability with a properly copper-clad PCB allows sustained operation without an external heatsink in compact drive modules. Use the SuperSO8 5x6's source-sense pin (pin 5) as a true Kelvin gate return to prevent source-inductance-induced gate-drive ringing and shoot-through at high dV/dt.
Được đề xuất
Solar MPPT / Battery Management Hot-Swap
BSC098N10NS5ATMA1 is frequently used as the high-side hot-swap / OR-ing FET in 24V/48V solar MPPT chargers and battery-management systems where its 100V rating tolerates PV open-circuit voltage spikes and its low RDS(on) minimizes I^2R loss across the conduction path. The 240A pulsed diode current rating gives a generous safety margin for inrush events during battery insertion. Drive the gate with a dedicated hot-swap controller that performs inrush current limiting and over-current protection, using the SuperSO8 5x6's thermal pad to spread heat into the host PCB copper.
Được đề xuất
USB-PD and High-Wattage Adapter Synchronous Buck
In USB-Power-Delivery and 60-100 W adapter buck stages converting 19V/20V from a PFC front-end to 5V/9V/12V/15V/20V outputs, the BSC098N10NS5ATMA1 serves as a robust low-side synchronous rectifier. The 100V rating is overkill for the 20V output rail but provides safety margin against transformer leakage-induced overshoot and is shared with the high-side FET in the same half-bridge. Its low RDS(on) reduces heat dissipation, enabling adapter designs to meet 30 W/in^3 power-density targets without paralleling MOSFETs.
Được đề xuất
Automotive 48V Mild-Hybrid DC-DC
BSC098N10NS5ATMA1 is commonly designed into 48V mild-hybrid buck and boost converters in automotive power-electronics platforms where its 100V breakdown tolerates 48V bus transients under load-dump conditions and its low RDS(on) supports >3 kW power levels in a single FET. The Infineon OptiMOS 5 family is qualified for automotive use (look for Infineon's Q-graded variants in adjacent part numbers). Use a dedicated automotive gate driver (e.g. 1EDI20N12AFXUMA1 or TLE94003EPXUMA1) for reinforced isolation and ASIL-aware fault handling.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC098N10NS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC070N10NS5ATMA1 | BSC097N06NSATMA1 | BSC027N10NS5ATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| VDS max | 100 V | 100 V | 60 V | 100 V | 150 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
Bảo phân biệt quan trọng
- OptiMOS 5 generation gives 43% lower RDS(on) and 44% lower Coss vs prior generation (vsBSC360N15NS3GATMA1 (OptiMOS 3 generation))
- Lower RDS(on) at same VDS rating in same footprint (vsBSC070N10NS5ATMA1 (same family, 7.0 mOhm))
- Higher VDS headroom than 60V-class OptiMOS 5 (vsBSC097N06NSATMA1 (60V))
Ghi chú thiết kế
Estimated: at ID=30 A continuous the BSC098N10NS5ATMA1 dissipates I^2R = 30^2 * 0.0098 = ~8.8 W. With the SuperSO8 5x6 thermal pad reflowed onto 1 oz copper over ~1 square inch, theta_JA is roughly 50 C/W, yielding a Tj rise of ~440 C above 25 C ambient - clearly beyond the 150 C limit, so active cooling or substantial copper heatsinking (>= 2 sq-in per FET) is required. Always use the central source-sense pin (pin 5) as the gate-driver return to avoid gate-rive oscillation in high-dI/dt loops.
Lay out the high-di/dt loop (input decoupling cap, high-side FET drain-source, low-side FET drain-source, back to input cap) as small and physically tight as possible; this minimizes parasitic inductance L*di/dt-induced voltage overshoot on the FET drain. Place the gate-drive loop (driver output, gate, source-sense, back to driver ground) orthogonal and physically separated from the power loop to avoid capacitive coupling that can re-trigger the gate.
Estimated: per Infineon's RthJC = ~1.5 C/W for SuperSO8 5x6, sustained 69 W at Tc=25 C implies Tj=130 C; at Tc=100 C operation the part can still dissipate ~38 W safely. Derate linearly to ~50% of rated ID when Tj is allowed to approach 125 C, as the RDS(on) increases ~1.4x from 25 C to 125 C and reduces safe operating area. Use thermal vias under the exposed pad (>= 9 x 0.3 mm vias filled with copper) to spread heat into inner copper layers.
Do not assume VGS(th) of 2-3 V is sufficient for full enhancement; the BSC098N10NS5ATMA1 specifies RDS(on) only at VGS=10 V and the RDS(on) at 4.5 V VGS can be 1.5-2x higher, leading to unexpected conduction loss in 5 V-driven synchronous-rectifier designs. Always drive the gate to >= 8 V for production designs. Avoid paralleling multiple FETs without individual source-sense gate resistors to prevent circulating current between mismatched RDS(on) devices.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Standard part is not AEC-Q100 qualified; contact Infineon for automotive-grade (Q-) variants if needed. Halogen-free status not explicitly listed in the verified web data.
