BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
MPN: BSC040N08NS5ATMA1 ✓ Hoạt độngBSC040N08NS5ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled three-terminal switch used to commutate current in switching power supplies, motor drives, and load-management circuits. The N-channel enhancement-mode variant (the dominant topology in modern SMPS) requires a positive gate-source voltage to turn on and conducts current from drain to source. Within the power-semiconductor hierarchy, MOSFETs sit alongside IGBTs and GaN FETs in the discrete-switch family, with silicon MOSFETs such as this OptiMOS 5 part dominating the sub-200 V, sub-100 A segment thanks to mature process technology, wide driver ecosystem, and excellent ruggedness.
Key specifications of the BSC040N08NS5ATMA1 include 4 mOhm maximum RDS(on) at VGS = 10 V, an avalanche-rated 100 A continuous drain current at 25 C case temperature, 2.5 W power dissipation on a 1 in² FR4 PCB at 25 C, 104 W power dissipation with case-temperature control, and an operating junction temperature range from -55 C to +175 C. The PG-TDSON-8-7 package features an exposed drain tab that doubles as a thermal pad, allowing direct copper cooling through the PCB.
Built on Infineon's advanced OptiMOS 5 trench process, the device achieves low figure-of-merit (FOM = RDS(on) × Qg) by combining a small die with optimized cell pitch. This makes the part equally attractive for high-frequency LLC resonant converters and hard-switched buck stages at 300 kHz to 1 MHz, where gate-drive losses and output charge dominate efficiency curves. The SuperSO8 5x6 footprint is JEDEC-standard, enabling drop-in PCB layout reuse across the OptiMOS 5 family.
Typical applications include 48 V telecom bus synchronous-rectifier MOSFETs in isolated DC-DC converters, server CRPS and OCP power-supply secondary-side rectifiers, 24 V to 12 V buck converters for industrial automation, hot-swap and OR-ing circuits in distributed power, and high-current brushless-DC motor drivers. The low RDS(on) × Qg figure-of-merit also suits battery-management systems where conduction loss and switching loss together determine thermal rise.
When designing with this part, ensure the gate-driver can source and sink the specified peak gate current and that a sufficiently low-impedance Kelvin connection is provided to the source pad (pin 2). For full 104 W dissipation, a heat spreader or direct case cooling is required; PCB copper alone will not sustain 100 A continuously without significant derating.
This page synthesizes distributor stock data, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet alone, giving engineers a single consolidated reference for sourcing, comparing, and applying the BSC040N08NS5ATMA1.
Bộ thay thế dễ dàng lắp đặt cho BSC040N08NS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC040N08NS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
BSC040N10NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC052N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ110N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC093N15NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC040N08NS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W |
| Power Dissipation (Tc=25C) | 104 W |
| Hộp | PG-TDSON-8-7 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
| Primary Application | Synchronous rectification in telecom and server power supplies |
Cấu hình chân BSC040N08NS5ATMA1
| Chân 1 | Source — Source connection (power return) |
| Chân 2 | Source (Kelvin) — Kelvin source - connect gate-driver return here for clean switching |
| Chân 3 | Source — Source connection (power return) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (common with exposed tab) |
| Chân 6 | Drain — Drain connection (common with exposed tab) |
| Chân 7 | Drain — Drain connection (common with exposed tab) |
| Chân 8 | Drain — Drain connection (common with exposed tab) |
Ứng dụng tiêu biểu
BSC040N08NS5ATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Synchronous Rectifier, Server CRPS / OCP Power Supply Secondary Side, 24 V Industrial Buck Converter, Hot-Swap and OR-ing Circuit, High-Current BLDC Motor Drive, Battery Management System (BMS) Discharge Path.
48 V Telecom Synchronous Rectifier
The BSC040N08NS5ATMA1 is purpose-built for synchronous rectification on the secondary side of isolated 48 V telecom DC-DC converters. Its 4 mOhm RDS(on) at VGS = 10 V and OptiMOS 5 figure-of-merit minimize both conduction loss and switching loss at the 100 kHz to 500 kHz switching frequencies typical of LLC and full-bridge topologies, directly lifting overall converter efficiency by 1-2 percentage points. Pair it with a digital isolator and a dedicated SR controller such as the IR2086S or Infineon XDPE132G5D for body-diode-free synchronous commutation. The PG-TDSON-8-7 footprint allows two parallel MOSFETs to be placed on a 10x10 mm copper pour, doubling current capability with balanced thermal sharing.
Được đề xuất
Server CRPS / OCP Power Supply Secondary Side
In server CRPS (Common Redundant Power Supply) and OCP (Open Compute Project) 48 V-to-12 V and 12 V-to-1 V converter modules, the BSC040N08NS5ATMA1 serves as the high-current synchronous rectifier FET in the secondary-side buck stage. Its 80 V VDS rating easily handles 12 V nominal with margin for transients, while the 4 mOhm on-resistance keeps conduction loss below 1% of throughput power at full 100 A load. The Kelvin-source pin 2 isolates gate-drive return from power-current return, allowing sub-10 ns clean switching essential to meeting 80 Plus Titanium efficiency targets. Infineon reference designs for 800 W and 1600 W CRPS units use this part family.
Được đề xuất
24 V Industrial Buck Converter
The BSC040N08NS5ATMA1 fits 24 V industrial bus buck converters that step down to 12 V, 5 V, or 3.3 V rails for PLC, motor-control, and factory-automation subsystems. Its 80 V VDS rating provides 3x safety margin above the 24 V nominal rail plus transients from inductive loads, while the 4 mOhm RDS(on) keeps full-load efficiency above 96% in a 10 A continuous design. The -55 C to +175 C junction temperature range tolerates the harsh thermal environments found in unenclosed industrial cabinets. The SuperSO8 5x6 footprint is JEDEC-standard, allowing PCB layout reuse across 24 V, 36 V, and 48 V input variants within the same product family.
Được đề xuất
Hot-Swap and OR-ing Circuit
The BSC040N08NS5ATMA1 operates as the switching element in 48 V hot-swap and OR-ing circuits used in redundant server and telecom power shelves. Its 4 mOhm RDS(on) keeps steady-state voltage drop below 200 mV at 50 A, minimizing conduction loss across the OR-ing path while preserving a fast electronic-fuse characteristic during fault conditions. The 100 A continuous drain current rating provides 2x inrush margin for hot-plug events, and the avalanche-rated body diode withstands the inductive kickback when a faulty board is removed. Pair it with a hot-swap controller such as the LM5060 or TPS2480 for programmable current limiting and fault logging.
Được đề xuất
High-Current BLDC Motor Drive
The BSC040N08NS5ATMA1 functions as the low-side or high-side switching FET in three-phase brushless DC (BLDC) motor drives for e-bike, drone, and small-EV traction systems operating from 24 V to 48 V battery packs. Its 100 A continuous drain current rating supports peak motor currents during acceleration, and the OptiMOS 5 process provides the fast switching speeds essential to PWM frequencies above 50 kHz for low-torque-ripple operation. The PG-TDSON-8-7 footprint allows a half-bridge to be constructed from a pair of these parts on a 12x10 mm copper area, ideal for compact integrated motor controllers. For higher-power 96 V systems, choose the 150 V BSC093N15NS5ATMA1 instead.
Được đề xuất
Battery Management System (BMS) Discharge Path
In lithium-ion battery management systems, the BSC040N08NS5ATMA1 serves as the high-current discharge-path MOSFET that isolates the battery pack from the load during fault or storage conditions. Its 4 mOhm RDS(on) keeps voltage drop below 100 mV at 25 A continuous discharge, preserving usable battery capacity, while the 100 A peak rating handles motor inrush and inverter surge currents. The OptiMOS 5 process provides excellent avalanche robustness, critical for absorbing back-EMF from inductive loads when the FET turns off abruptly. For 48 V e-scooter and 72 V light-EV battery packs, choose the 100 V BSC040N10NS5ATMA1 variant for additional VDS margin.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC040N08NS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC040N10NS5ATMA1 | BSC052N08NS5ATMA1 | BSZ110N08NS5ATMA1 | BSC093N15NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | TSDSON-8 - smaller | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same |
| VDS max | 80 V | 100 V | 80 V | 80 V | 150 V | 80 V |
| RDS(on) max @ VGS=10V | 4 mOhm | 4 mOhm | 5.2 mOhm | 11 mOhm | 9.3 mOhm | 9 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Primary Application | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification |
Bảo phân biệt quan trọng
- Lowest RDS(on) in the 80 V OptiMOS 5 SuperSO8 family (vsBSC052N08NS5ATMA1 (5.2 mOhm))
- 80 V rating optimized for 48 V synchronous rectification (vsBSC040N10NS5ATMA1 (100 V))
- PG-TDSON-8-7 footprint enables higher continuous current than TSDSON-8 alternatives (vsBSZ110N08NS5ATMA1 (TSDSON-8))
Ghi chú thiết kế
The PG-TDSON-8-7 package provides a Kelvin source on pin 2 specifically to isolate gate-drive return current from power-current return. Route the gate-driver ground return directly to pin 2, not to pin 1 or 3, and keep the gate-drive loop area (gate-driver output to gate to pin 2 back to driver ground) under 0.5 cm² to minimize parasitic inductance. Use a 10-22 ohm gate resistor in series with the driver output to dampen ringing without sacrificing switching speed.
Estimated: at 50 A continuous drain current and RDS(on) of 4 mOhm (rising to ~6 mOhm at 125 C junction), conduction loss reaches approximately 15 W. On a 1 in² FR4 copper pour (theta_JA ≈ 50 C/W), junction temperature would rise 750 C above ambient - clearly impossible - so 50 A continuous requires either active cooling or substantial copper thermal mass. For 104 W dissipation, direct case cooling via heatsink mounting is required; do not rely on PCB-only dissipation for continuous high-current operation.
Do not connect the gate-driver return to pin 1 or pin 3 instead of pin 2 - the package inductance shared between power and gate loops will cause severe gate ringing and possible avalanche failure. Do not exceed VGS of +/-20 V (verify exact rating in datasheet); use a 12 V or 10 V gate drive for best efficiency. Always provide a TVS or snubber across drain-source if switching inductive loads, even though OptiMOS 5 is avalanche-rated.
Use a 4-layer PCB with at least 2 oz copper on top and bottom layers for the drain tab connection. Thermal vias under the exposed pad (0.3 mm diameter, 1 mm pitch, filled with solder or thermal epoxy) reduce junction-to-ambient thermal resistance by 30-40%. Keep the gate-drive traces short and away from drain switching nodes to prevent capacitive injection; route the gate on an inner layer if necessary with a ground shield above and below.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial grade part. For automotive applications, consult Infineon automotive-grade MOSFET portfolio.
