IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon
MPN: IPL60R065P7AUMA1 ✓ Hoạt độngIPL60R065P7AUMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch and amplify power in electronic circuits. The 600 V rating places this part in the high-voltage MOSFET family used in offline converters, where the device sits in the power path of switched-mode power supplies (SMPS) and bridges the gap between low-voltage logic ICs and discrete semiconductors on the system hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor. Superjunction MOSFETs like CoolMOS P7 use a charge-balanced drift region to simultaneously reduce R<sub>DS(on)</sub> and switching losses, replacing conventional planar MOSFETs in high-voltage, high-frequency power conversion.
Key differentiating features include 65 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 600 V drain-source breakdown voltage, 2895 pF input capacitance (C<sub>iss</sub>) at 400 V V<sub>DS</sub>, 7 ns rise time and 4 ns fall time, and 3.5 V gate threshold voltage. The PG-VSON-4 package with exposed pad delivers low thermal resistance suitable for high-current switching. CoolMOS P7 is the successor to the CoolMOS P6 series, providing an improved price/performance ratio.
The CoolMOS P7 superjunction architecture uses deep-trench charge-balancing to deliver best-in-class figure-of-merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) compared to planar 600 V MOSFETs. Its low Q<sub>rr</sub> and fast body-diode behavior reduce switching losses in hard-switched topologies and improve light-load efficiency in resonant converters. Compared to the older P6 generation, P7 improves ease-of-use (wider gate-drive compatibility, integrated protection features) while reducing both conduction and switching loss.
Typical applications include switched-mode power supplies (SMPS) for servers and telecom, power-factor correction (PFC) stages, hard-switched half-bridge and full-bridge converters, LLC resonant converters, and industrial motor drives. The 600 V drain rating supports universal-input rectified mains (85-305 VAC) designs.
When designing with this device, ensure the gate driver can supply sufficient peak current (>2 A) to rapidly charge/discharge the 2895 pF input capacitance and minimize switching loss. The exposed thermal pad MUST be soldered to a sufficient copper pour area (recommended >= 50 mm² on JEDEC 1s0p test board) to keep junction temperature within the 150 °C maximum under continuous full-load conditions.
This page synthesizes distributor pricing, same-family CoolMOS drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPL60R065P7AUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPL60R065P7AUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
IPL60R065P7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC098N10NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R600P7ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6N028ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC011N03LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPL60R065P7AUMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Technology Family | CoolMOS™ P7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF |
| Rise Time (t<sub>r</sub>) | 7 ns |
| Fall Time (t<sub>f</sub>) | 4 ns |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C (T<sub>j</sub>) |
| Hộp | PG-VSON-4 (surface mount with exposed pad) |
| Số lượng chân | 4 |
| Kiểu lắp đặt | Surface Mount |
| Channel Type | N-Channel |
| Polarity | Single N-channel |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Đông trùng haogen | Yes |
Cấu hình chân IPL60R065P7AUMA1
| Chân 1 | Source — Source connection (bonded to exposed pad) |
| Chân 2 | Source — Source connection (bonded to exposed pad) |
| Chân 3 | Source — Source connection (bonded to exposed pad) |
| Chân 4 | Gate — Gate drive input |
| Chân EP | Source (Exposed Pad) — Thermal pad, electrically bonded to Source; MUST be soldered to PCB copper pour for thermal dissipation |
Khu vực hoạt động an toàn (DC, T_C = 25 °C)
Ứng dụng tiêu biểu
IPL60R065P7AUMA1 phù hợp cho 6 Áp dụngs: Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, Half-Bridge / Full-Bridge Converters, LLC Resonant Converters, Industrial Motor Drives, Telecom / Server Rectifiers.
Switched-Mode Power Supplies (SMPS)
IPL60R065P7AUMA1 fits SMPS primary-side switching with its 600 V V<sub>DS</sub> rating that handles rectified universal AC mains (85-305 VAC → ~400 V DC bus), 65 mΩ R<sub>DS(on)</sub> minimizing conduction loss, and CoolMOS P7 fast switching that improves efficiency across load. Placed as the main switch in flyback, forward, or half-bridge topologies, this part delivers the best-in-class figure-of-merit that P7 brings over older P6 generations. The PG-VSON-4 package keeps a compact power stage while exposing a large Source pad for thermal dissipation, supporting converter designs up to ~3 kW in continuous conduction.
Được đề xuất
Power Factor Correction (PFC) Boost Stages
IPL60R065P7AUMA1 is well-suited to CCM PFC boost stages operating from a 400 V DC bus: its 600 V drain rating provides ample margin for line transients, the 65 mΩ R<sub>DS(on)</sub> keeps conduction loss manageable at high line (230 VAC), and the CoolMOS P7 platform's low reverse-recovery charge (Q<sub>rr</sub>) reduces switching loss in CCM hard-switched operation. Used between the bridge rectifier and the DC bus capacitor, this part enables >95% PFC stage efficiency. The exposed Source pad supports the continuous high-current conduction duty cycle of a boost PFC stage at full load.
Được đề xuất
Half-Bridge / Full-Bridge Converters
IPL60R065P7AUMA1 works as primary-side switch in 600 V class half-bridge and full-bridge converters where two MOSFETs alternately switch at 100-200 kHz to drive a high-isolation transformer. The 65 mΩ R<sub>DS(on)</sub> trades off against the body-diode's reverse-recovery behavior, and the CoolMOS P7 family has been optimized for hard-switched bridge topologies. Compared to a planar MOSFET, the superjunction architecture cuts switching loss by 30-50% at the same R<sub>DS(on)</sub>, enabling higher switching frequencies and smaller magnetics in the converter design.
Được đề xuất
LLC Resonant Converters
IPL60R065P7AUMA1 serves as the primary switch in LLC resonant converter topologies for high-density server and telecom power supplies. In LLC, MOSFET switching losses are dominated by turn-off loss rather than turn-on (zero-voltage switching on the primary side), and the CoolMOS P7 low Q<sub>g</sub> and fast fall time (4 ns) minimize turn-off loss. Its 65 mΩ R<sub>DS(on)</sub> handles the resonant tank current well, and the 600 V V<sub>DS</sub> rating comfortably covers the rectified-mains DC bus plus resonant overshoot.
Được đề xuất
Industrial Motor Drives
IPL60R065P7AUMA1 fits the DC bus switching stage of low-voltage industrial motor drives (3-phase inverters for sub-500 V DC bus systems) where 600 V-rated MOSFETs switch at 4-16 kHz to drive induction or BLDC motors. The 41 A continuous current rating handles motor phase currents up to ~30 A RMS, and the PG-VSON-4 package supports high-density power-stage layouts. CoolMOS P7's rugged body-diode tolerates the dead-time cross-conduction events typical of motor drive PWM, simplifying drive design.
Được đề xuất
Telecom / Server Rectifiers
IPL60R065P7AUMA1 enables compact front-end rectifier stages for telecom (-48 V systems fed from AC mains) and server (380 V DC or HV-DC) power supplies, where 600 V MOSFETs switch at 65-100 kHz in CCM/DCM boundary-conduction modes. The CoolMOS P7 family offers improved ease-of-use with wider gate-drive compatibility (drives directly from 10-12 V PWM controllers without negative bias). With 65 mΩ R<sub>DS(on)</sub> and 41 A drain current, this part supports 1.5-3 kW rectifier designs in standard 1U/2U form factors.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPL60R065P7AUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPL60R065P7 | BSC098N10NS5ATMA1 | IPD60R600P7ATMA1 | IAUC100N04S6N028ATMA1 | BSC011N03LSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-VSON-4 (Source pin + exposed pad) | PG-VSON-4 - same | PG-VSON-8 (SuperSO8) - 8 pins | PG-VSON-4 - same VSON family | PG-VSON-8 (SuperSO8) | PG-VSON-8 (SuperSO8) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | 600 V | 100 V | 600 V | 40 V | 30 V |
| On-Resistance (R<sub>DS(on)</sub> max) | 65 mΩ | 65 mΩ | 9.8 mΩ | 600 mΩ | 2.8 mΩ | 1.1 mΩ |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | 41 A | 50 A | 9 A | 100 A | 100 A |
| Technology Family | CoolMOS P7 (superjunction) | CoolMOS P7 (superjunction) | OptiMOS 5 (superjunction low-V) | CoolMOS P7 (superjunction) | OptiMOS 6 | OptiMOS 5 |
Bảo phân biệt quan trọng
- CoolMOS P7 platform with improved ease-of-use over P6 (vsIPL60R065P6 (predecessor CoolMOS P6))
- Superjunction architecture - best-in-class figure-of-merit at 600 V (vsPlanar 600 V MOSFETs (e.g., 2N60-series))
- Compact PG-VSON-4 with exposed Source pad (vsThrough-hole TO-220 / TO-247)
Ghi chú thiết kế
Estimated: at P<sub>D</sub>=201 W with a typical PG-VSON-4 θ<sub>JA</sub> ~50 °C/W on a 50 mm² copper pour on JEDEC 1s0p test board, junction temperature rise is approximately 25 °C per watt of dissipation. Continuous full-load operation at 41 A drain current requires either (a) a larger copper area (>= 100 mm² to bring θ<sub>JA</sub> down to ~30 °C/W) or (b) forced-air cooling. Without thermal management, derate I<sub>D</sub> against T<sub>j</sub>=150 °C maximum.
Place the gate driver as close as possible to the Gate pin (pin 4) to minimize parasitic inductance in the gate loop. Use a 10 Ω gate resistor and a low-ESR ceramic bypass capacitor (100 nF minimum) on the gate-driver supply. The exposed Source pad MUST be soldered to a continuous copper pour that connects to all three Source pins (1, 2, 3) - split or missing Source pads create parasitic inductance and degrade switching performance.
Keep the power loop (input cap → drain → source → ground return) area as small as possible to minimize stray inductance L<sub>s</sub>, which causes V<sub>DS</sub> overshoot during turn-off and stresses the 600 V breakdown. For a half-bridge, use a low-inductance layout with the high-voltage bus capacitor directly adjacent to the MOSFETs. Estimate: a 20 nH stray inductance with 41 A turn-off (4 ns fall time) produces L<sub>s</sub>·di/dt overshoot of ~205 V - leaving only ~395 V of margin on a 400 V bus.
Do not exceed V<sub>GS</sub>=±20 V gate-source voltage (absolute maximum per superjunction MOSFET datasheets). Use a gate-source Zener clamp (typically 12-15 V) across Gate-Source to protect against V<sub>DS</sub> transients coupled through C<sub>gd</sub>. The 3.5 V V<sub>GS(th)</sub> means a UVLO'd gate driver can leave the MOSFET in linear mode, dissipating high power - design gate-driver UVLO threshold above 4-5 V minimum.
Thông tin tuân thủ
Infineon industrial-grade CoolMOS P7 family. RoHS and REACH compliant per manufacturer datasheet. Halogen-free per Infineon environmental compliance. Not AEC-Q100 qualified - this is the industrial-grade variant; AEC-Q100 qualified automotive variants are in the same family but require explicit automotive part numbers.
