BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon
MPN: BSP89H6327XTSA1 ✓ Hoạt độngBSP89H6327XTSA1 Tóm tắt
What is a SIPMOS small-signal MOSFET? A SIPMOS (Siemens/Infineon Power MOS) small-signal MOSFET is a single-transistor power MOSFET built on Infineon's planar SIPMOS process, optimized for low-current switching applications (typically under 1 A). It belongs to the broader category of N-Channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The 'small-signal' designation means it trades off high-current handling for compactness, low gate charge, and easy logic-level drive. This class of device is commonly used as a high-side switch, level shifter, or driver for relays and optocouplers in industrial and automotive control circuits.
Key features of the BSP89 include a 240 V V(BR)DSS rating, logic-level VGS(th) for direct microcontroller interface, avalanche-rated single-pulse body diode, and an integrated drain tab for improved thermal dissipation. The PG-SOT223 package provides a thermal resistance (RthJA) of 70 K/W on a 6 cm² cooling footprint, enabling 1.8 W power dissipation on standard FR4 PCB. The 'H6327' ordering code indicates 1000-piece tape-and-reel packaging and AEC-Q101 automotive qualification, making the part suitable for both industrial and automotive-grade designs.
The device uses Infineon's mature SIPMOS planar cell technology, delivering robust dv/dt immunity and stable threshold voltage across the -55 °C to +150 °C junction temperature range. The internal Zener between gate and source protects against ESD events up to typical HBM levels.
Typical applications include high-side switches in 24 V industrial bus systems, relay and solenoid drivers in automotive body electronics, LED driver stages, and interface level shifters between 3.3 V microcontrollers and 24 V/48 V loads. The 240 V rating also makes it a candidate for offline power supply auxiliary circuits and small motor control.
When designing with this part, observe the maximum continuous drain current of 0.35 A and derate appropriately at elevated ambient temperatures. The exposed tab (pin 4) must be soldered to a sufficient copper area to keep junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives (same-brand Infineon SIPMOS family), and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSP89H6327XTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSP89H6327XTSA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Operating Temperature, Operating Temperature Range, Technology.
BSP89H6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP88H6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSR316PH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP762TXUMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSP772TXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP89H6327XTSA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET, enhancement mode |
| Technology | SIPMOS (planar power MOS) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C (Tj) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W |
| Hộp | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Kiểu lắp đặt | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) |
| dv/dt Rated | Yes |
| ESD Protection | Internal gate-source Zener |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSP89H6327XTSA1
| Chân 1 | GATE — Gate input; logic-level drive |
| Chân 2 | DRAIN — Drain connection (internally tied to tab) |
| Chân 3 | SOURCE — Source connection |
| Chân 4 | DRAIN (TAB) — Drain / thermal tab; must be soldered to copper pour |
Khu vực hoạt động an toàn (DC, Ta=25°C)
Ứng dụng tiêu biểu
BSP89H6327XTSA1 phù hợp cho 7 Áp dụngs: 24 V Industrial Bus High-Side Switch, Automotive Relay and Solenoid Driver, Logic-Level Level Shifter (3.3 V to 24 V/48 V), LED Driver High-Side Switch (24 V Strings), Offline Auxiliary Power Supply Switch, Sensor Signal Multiplexer and Switch Matrix, Battery Management Isolator Switch.
24 V Industrial Bus High-Side Switch
The BSP89H6327XTSA1's 240 V V(BR)DSS provides 10x safety margin above 24 V industrial rails (IEC 61131-2 type 1/3), making it ideal for high-side switching of sensors, optocouplers, and small actuators on factory-automation PLC backplanes. Its logic-level gate drive allows direct connection to a 3.3 V or 5 V microcontroller GPIO without a gate-driver IC, and the SOT-223 exposed tab dissipates the ~0.3 W conduction loss without external heatsinking on a 6 cm² copper pour. Pair it with a 100 kΩ gate pull-down resistor for fail-safe off-state behavior during MCU reset.
Được đề xuất
Automotive Relay and Solenoid Driver
The BSP89H6327XTSA1 is AEC-Q101 qualified and rated for 240 V avalanche, making it an excellent low-side driver for 12 V/24 V automotive relays, solenoids, and valve coils. The 240 V breakdown easily absorbs the inductive flyback spike (typically 200-300 V) from a 24 V relay coil, eliminating the need for an external flyback diode in cost-sensitive designs. At 0.35 A continuous current it covers most body-electronics relays. Use a 10 kΩ gate pull-down to keep the relay off during ECU power-up transients.
Được đề xuất
Logic-Level Level Shifter (3.3 V to 24 V/48 V)
The BSP89H6327XTSA1 is purpose-built for level shifting between low-voltage microcontrollers (3.3 V/5 V GPIO) and 24 V or 48 V industrial/telecom rails. Its low gate threshold ensures full enhancement at logic-high levels, and the 240 V drain rating tolerates the higher rail voltage with substantial margin. A typical high-side level-shift configuration uses the BSP89 as a pull-up transistor with a 100 kΩ drain pull-up; turn-on time is dominated by the gate charge (~1-2 nC), enabling sub-microsecond switching for I2C isolators and SPI galvanic isolation bridges.
Được đề xuất
LED Driver High-Side Switch (24 V Strings)
For 24 V LED string drivers in architectural lighting and signage, the BSP89H6327XTSA1 offers logic-level PWM dimming up to 0.35 A per channel with a 240 V avalanche rating that handles the inductive spike of long LED cables. Its SOT-223 footprint enables compact multi-channel driver PCBs. PWM dimming frequencies up to 10 kHz are supported thanks to the small SIPMOS gate charge; use a 1 kΩ gate resistor to slow the edge and reduce EMI on long cable runs.
Được đề xuất
Offline Auxiliary Power Supply Switch
In auxiliary flyback or buck-derived low-power offline supplies (e.g., 5 V/12 V standby rails from universal mains), the BSP89H6327XTSA1 can serve as a primary-side switch for sub-1 W outputs where its 240 V rating covers the rectified 170 V DC bus (120 VAC) or 340 V DC bus (240 VAC) with margin. The 6 Ω RDS(on) limits efficiency to about 75-80% at full load, but this is acceptable for always-on standby rails where cost and simplicity dominate. Add an RCD snubber to manage avalanche energy during mains transients.
Được đề xuất
Sensor Signal Multiplexer and Switch Matrix
The BSP89H6327XTSA1's low on-resistance variation with VGS (in the saturated region) and 240 V rating make it a viable analog signal multiplexer for high-voltage sensor matrices in test-and-measurement equipment and data-acquisition systems. Its low gate charge minimizes charge injection into the signal path (<10 pC typical), preserving measurement accuracy when switching between high-impedance sensor sources. Use it in a 4:1 or 8:1 mux tree with the BSP297H6327XTSA1 for complementary low-voltage channels.
Được đề xuất
Battery Management Isolator Switch
In 12 V/24 V/48 V battery management systems (BMS), the BSP89H6327XTSA1 acts as a low-side disconnect switch for individual cell monitoring or pack isolation relays. The 240 V breakdown withstands load-dump transients on 12 V automotive buses (per ISO 7637-2) and the inductive kick of contactor coils. AEC-Q101 qualification allows direct use in EV battery-pack PCBs. At 0.35 A it suits signal-level isolation rather than main contactor drive - pair with a larger Infineon IGBT or SiC MOSFET for the main contactor.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSP89H6327XTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSP88H6327XTSA1 | BSR316PH6327XTSA1 | BSP762TXUMA1 | BSP772TXUMA1 |
|---|---|---|---|---|---|
| Package | PG-SOT223-4 | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel (smart switch) |
| Logic-Level Gate | Yes | Yes | Yes | Yes | Yes (integrated driver) |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Bảo phân biệt quan trọng
- Highest VDS rating in the Infineon SOT-223 SIPMOS family (vsBSP297H6327XTSA1)
- Logic-level gate drive eliminates external gate-driver IC (vsIRF520NPBF)
- AEC-Q101 automotive qualification included in standard part (vsBSR316PH6327XTSA1 (P-Channel complement))
Ghi chú thiết kế
Estimated: at ID=0.35 A and RDS(on)=6 Ω, the conduction loss is P=I²R ≈ 0.74 W. Combined with switching losses in a 24 V/1 kHz application, total dissipation typically reaches 1.0-1.2 W. The Infineon datasheet specifies RthJA=70 K/W on a 6 cm² copper pour (RthJS=25 K/W to the tab). To stay below a 100 K junction rise at 25 °C ambient, attach the SOT-223 tab to a copper pour of at least 6 cm² with multiple thermal vias to the inner layers. Inadequate copper area is the #1 cause of field failures in this part family.
Place a 100 kΩ gate-to-source pull-down resistor directly at the gate pin to ensure the MOSFET stays off during MCU reset and power-up glitches. Add a 10 Ω-100 Ω gate series resistor to damp the gate-source LC resonance and slow the switching edge - this reduces EMI on long gate traces and prevents spurious turn-on from dv/dt coupling through Cgd. Keep the gate trace short and away from the drain trace to minimize parasitic feedback that can cause oscillation in high-side configurations.
Do not exceed the 240 V VDS rating, including inductive flyback spikes - always add a flyback diode or TVS clamp across inductive loads such as relays and solenoids. The 'logic-level' gate drive requires VGS to fully exceed VGS(th) plus margin; if the MCU GPIO is only 2.5 V and VGS(th) is 2.0 V, the part may operate in the linear region with high RDS(on). Verify VGS(th) from the datasheet and ensure your logic high is at least 3.0 V for full enhancement at 0.35 A.
Thông tin tuân thủ
AEC-Q101 (automotive) qualified per the H6327 ordering suffix. RoHS and REACH compliant per Infineon product declaration. Halogen-free status not explicitly listed in the provided web data - marked unknown pending datasheet verification.
