IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon
MPN: IKD10N60RC2ATMA1 ✓ Hoạt độngIKD10N60RC2ATMA1 Tóm tắt
An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high-input-impedance, voltage-driven gate of a MOSFET with the low-conduction-loss output stage of a bipolar transistor. As a discrete single-device solution, it sits in the power-management hierarchy between signal-level logic ICs and high-power modules, enabling efficient switching in the 600 V class for industrial and consumer applications. The RC2 family integrates the freewheeling diode inside the same silicon die, eliminating the need for an external anti-parallel diode and reducing parasitic inductance.
Key features include 600 V collector-emitter breakdown voltage, 10 A continuous DC collector current (I_C nom), 18.8 A pulsed collector current, low V_CE(sat) typical values in the 1.5 V range for reduced conduction loss, and a monolithically integrated diode co-packed for hard-switched bridge topologies. The trench field-stop cell technology delivers a tight trade-off between V_CE(sat) and switching losses, suiting it to 10-30 kHz switching frequencies typical of motor drives and SMPS.
Typical applications include low-power motor drives (drum motors, small fans, appliance pumps), induction-cooking and microwave-oven inverters, PFC boost switches in SMPS, welding-machine primary stages, and uninterruptible power supply (UPS) inverter legs. The PG-TO252-3 surface-mount package enables high-density PCB designs and is compatible with automated SMT assembly.
When designing with the IKD10N60RC2, gate-drive considerations are critical: a +15 V gate-emitter voltage is recommended to fully enhance the IGBT, and a gate resistor in the 10-47 ohm range controls switching speed and dv/dt. Thermal management should assume that the integrated diode contributes additional conduction loss in inverter legs, and the PG-TO252-3 footprint requires adequate copper pour on the drain tab to keep junction temperature below 175 C.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IKD10N60RC2ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IKD10N60RC2ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Integrated Diode, Operating Junction Temperature, Operating Temperature Range, Series.
IKD04N60RATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IKD10N60R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKD10N60RC2ATMA1 Tỷ lệ tối đa & tính chất điện
| Collector-Emitter Voltage (V_CE) | 600 V |
| Continuous Collector Current (I_C nom) | 10 A |
| Pulsed Collector Current (I_Cp) | 18.8 A |
| Maximum Power Dissipation (P_tot) | 79 W |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed |
| Hộp | PG-TO252-3 (DPAK, surface mount) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -40 C to +175 C (junction) |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) |
| Trạng thái RoHS | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) |
Cấu hình chân IKD10N60RC2ATMA1
| Chân 1 | Gate — Gate control input; drive with +15 V to enhance, 0 V to turn off |
| Chân 2 | Collector (Tab) — Collector terminal connected to the metal tab on package bottom; primary thermal path and high-voltage node |
| Chân 3 | Emitter — Emitter return path for gate drive and load current |
Khu vực hoạt động an toàn (Forward-Bias SOA)
Ứng dụng tiêu biểu
IKD10N60RC2ATMA1 phù hợp cho 7 Áp dụngs: Low-Power Motor Drives, Induction Cooking and Microwave Inverters, PFC Boost Converter Switch, Uninterruptible Power Supply (UPS) Inverter, Welding Machine Primary Switch, Solar Micro-Inverter, SMPS Half-Bridge Primary.
Low-Power Motor Drives
The IKD10N60RC2ATMA1's 600 V V_CE rating, 10 A continuous collector current, and monolithically integrated diode make it ideal for low-power three-phase inverter legs driving small brushless DC (BLDC) and induction motors. In a typical 24-48 V battery-powered or rectified-mains-fed drive up to ~1 kW, the RC2 family delivers low V_CE(sat) conduction loss and hard-switching capability at 10-20 kHz PWM. The integrated freewheeling diode eliminates six discrete diodes from a three-phase bridge, shrinking PCB area. Designers should use a +15 V gate drive with 22-33 ohm R_G and place the PG-TO252-3 tab on at least 1 square inch of copper to keep T_j below 125 C at full load.
Được đề xuất
Induction Cooking and Microwave Inverters
Induction-cookware inverters and microwave-oven magnetron drivers demand hard-switching IGBTs with co-packed diodes, and the IKD10N60RC2ATMA1 fits this profile precisely. Its 600 V breakdown provides comfortable margin over rectified 230 V AC (peak ~325 V), the 10 A continuous rating supports cookware loads up to ~2 kW, and the integrated RC2 diode eliminates the need for a discrete anti-parallel device. The trench field-stop cell delivers low switching loss at the 20-30 kHz frequencies typical of induction cookware, while the PG-TO252-3 surface-mount package enables automated SMT assembly at the volumes required by the appliance market.
Được đề xuất
PFC Boost Converter Switch
The IKD10N60RC2ATMA1 serves well as the boost switch in continuous-conduction-mode (CCM) PFC stages up to ~1.5 kW at universal mains input. Its 600 V rating handles 400 V PFC output rails with margin, the 10 A rating covers boost inductor peak currents at full load, and the integrated RC2 diode simplifies the boost freewheel path - though designers typically still use a separate ultrafast boost diode for highest efficiency. Pair it with a dedicated CCM-PFC controller such as the UCC28180 or NCP1654 and a 22 ohm gate resistor to balance switching loss against EMI. For higher-power PFC stages above 2 kW, consider migrating to a TO-247 packaged RC2 device for better thermal headroom.
Được đề xuất
Uninterruptible Power Supply (UPS) Inverter
In small single-phase UPS systems rated 0.5-2 kVA, the IKD10N60RC2ATMA1 can serve as the half-bridge switch in the low-frequency inverter stage that converts 400 V DC battery rail to 230 V AC output. The 600 V V_CE rating comfortably handles 400 V battery rail plus transient overshoot, and the 10 A continuous rating covers typical single-phase loads. The integrated diode simplifies the H-bridge layout, and the trench field-stop cell keeps switching loss acceptable at the 50/60 Hz fundamental with modest PWM at 1-5 kHz. For higher-power three-phase UPS systems, paralleled RC2 devices or larger TO-247 packages are recommended.
Được đề xuất
Welding Machine Primary Switch
Consumer and light-industrial MMA/TIG welding machines often use a single-ended forward or half-bridge topology on the primary side, and the IKD10N60RC2ATMA1 is a cost-effective switch choice for sub-200 A welders. Its 10 A rating supports ~2 kW primary power at 230 V rectified mains, the integrated diode simplifies the half-bridge freewheel path, and the trench field-stop cell handles the hard-switching transients from welding arc ignition. The PG-TO252-3 surface-mount package enables compact, low-cost PCB designs typical of the consumer welder market. Use a snubber network (RCD) across the primary winding to clamp voltage spikes within the 600 V V_CE rating.
Được đề xuất
Solar Micro-Inverter
Single-panel solar micro-inverters (typically 250-600 W) use a DC-DC boost stage followed by a DC-AC inverter, and the IKD10N60RC2ATMA1 can serve as the high-side switch in either stage. In a 600 W micro-inverter, the 10 A continuous rating covers panel currents up to ~12 A, the 600 V rating handles 400 V DC-link plus margin, and the integrated diode simplifies the inverter leg. The RC2 family's trench field-stop cell delivers good hard-switching efficiency at the 20-50 kHz PWM frequencies typical of micro-inverter designs, and the PG-TO252-3 surface-mount package supports automated assembly for high-volume solar deployment.
Được đề xuất
SMPS Half-Bridge Primary
Hard-switched half-bridge SMPS topologies in the 500 W to 1.5 kW range often use 600 V IGBTs as the primary switches when cost is a primary concern and switching frequency is modest (20-40 kHz). The IKD10N60RC2ATMA1's 10 A rating, monolithically integrated RC2 diode, and surface-mount PG-TO252-3 package deliver a cost-effective solution for sub-1 kW SMPS designs such as industrial LED drivers, telecom rectifiers, and small server PSUs. The trench field-stop technology provides a good balance of V_CE(sat) and switching loss at these frequencies, and the integrated diode eliminates two discrete devices from the BOM.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IKD10N60RC2ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IKD04N60RATMA1 | IKD10N60R |
|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon |
| Collector-Emitter Voltage (V_CE) | 600 V | 600 V | 600 V |
| Continuous Collector Current (I_C) | 10 A | 4 A (-60%) | 10 A |
| Integrated Diode | Yes (RC2 generation) | Yes | Yes (RC1 generation) |
| Technology Generation | TRENCHSTOP RC2 | TRENCHSTOP RC | TRENCHSTOP RC1 (earlier) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Approximate Unit Price (qty-1) | $1.85 | $1.50 approx | $1.70 approx |
Bảo phân biệt quan trọng
- Monolithically integrated RC2 anti-parallel diode (vsDiscrete 600 V IGBT + separate diode pair)
- 10 A continuous current in PG-TO252-3 surface-mount package (vsIKD04N60RATMA1 (4 A in same package))
- TRENCHSTOP RC2 cell technology (vsEarlier-generation TRENCHSTOP RC1 (IKD10N60R))
Ghi chú thiết kế
The 79 W power dissipation rating of the IKD10N60RC2ATMA1 assumes the PG-TO252-3 tab is mounted on a 1 square inch copper pour on a standard FR-4 PCB. Estimated: with a smaller copper area (0.25 sq in), the junction-to-ambient thermal resistance rises to roughly 80 C/W, limiting continuous dissipation to about 1.9 W at 25 C ambient. For 5 W or higher dissipation, add a clip-on heatsink or expand the copper area to 2-4 sq in on both top and bottom layers joined with thermal vias. Always measure case temperature T_C under worst-case load - target T_j below 125 C for long-term reliability.
Minimize the gate-drive loop area by placing the gate resistor (10-47 ohm) within 5 mm of the gate pin and routing the gate return trace directly back to the emitter pin (pin 3), NOT to a remote ground. Long gate-emitter loops cause ringing that can falsely enhance the IGBT or exceed the +/-20 V V_GE maximum. For hard-switched half-bridges, keep the half-bridge power loop (DC+ bus cap -> high-side IGBT -> low-side IGBT -> DC- bus cap return) tight and symmetrical; use a low-ESR film or ceramic bypass capacitor directly across the DC bus within 10 mm of the IGBTs to suppress voltage spikes.
Do not exceed V_CE = 600 V even for transients - typical pitfall is forgetting turn-off voltage overshoot from leakage inductance in the transformer or inductor. Add an RCD or TVS clamp across the primary winding to keep the spike below 480 V (80% derating per Infineon's recommendation). Also, do not drive the gate with more than +/-20 V; use a 15 V zener between gate and emitter for protection. Finally, do not rely on the integrated RC2 diode as a freewheeling diode in continuous-conduction high-di/dt applications; verify reverse-recovery behaviour in the datasheet or use a discrete ultrafast diode in parallel for highest efficiency.
Use a multi-layer PCB (at least 4 layers) with an inner ground or V- plane directly under the IGBT to provide a low-impedance return path and improve thermal spreading. Stitch the inner plane to the drain tab copper pour with at least 9 thermal vias (0.3 mm drill, 1 mm pitch) directly under the PG-TO252-3 tab. For SMT reflow, follow JEDEC J-STD-020 MSL-1 handling - the PG-TO252-3 package is generally moisture-tolerant but pre-bake if exposure time exceeds the floor-life. Use a SnAgCu lead-free paste and a reflow profile with peak temperature 245-260 C.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Industrial qualification only - not AEC-Q100 qualified; for automotive use, look at the AIKW or IKD-AEC-Q100 variants in the RC2 family. Halogen-free status not explicitly stated in the verified web data.
