BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
MPN: BSD235CH6327XTSA1 ✓ Hoạt độngBSD235CH6327XTSA1 Tóm tắt
A MOSFET array (also called a dual MOSFET or MOSFET pair) is a semiconductor device that co-integrates two MOSFETs in a single package, often in complementary N+P polarity for half-bridge or push-pull switching stages. MOSFET arrays belong to the broader hierarchy of discrete semiconductors -> transistors -> field-effect transistors (FETs) -> metal-oxide-semiconductor field-effect transistors (MOSFETs) -> power MOSFETs. They are widely used in compact load-switch and level-shift circuits where PCB area is at a premium and matched on-resistance / threshold-voltage characteristics between the two devices improve symmetry.
The BSD235C belongs to Infineon's famous low-voltage OptiMOS™ families, the market leader in high-efficiency solutions for power generation (e.g. solar micro inverters) and power supplies (e.g. server and telecom rails). The compact SOT-363 outline measures roughly 2.0 × 1.25 × 1.0 mm, enabling the part to occupy the footprint of a single SOT-363 IC while delivering two switches — critical for portable and battery-powered designs. The 20V VDS rating makes the device well suited to 3.3V, 5V, and 12V rails, including USB-Power-Delivery (USB-PD) switching and 1-cell Li-ion load management.
Typical applications for the BSD235CH6327XTSA1 include load switching in portable devices, battery protection circuits, DC-DC converter synchronous-rectifier signal stages, level shifters, and small-signal motor or relay drivers. The complementary polarity simplifies full-bridge and push-pull topologies because designers can use one device per switch position without needing two separate N-only or P-only arrays.
When designing with this part, observe a few critical trade-offs. The 500 mW package-level dissipation budget means both MOSFETs cannot simultaneously carry their maximum rated currents at large VDS — derate by at least 30% in worst-case DC conditions or move pulsed load. Keep gate-drive rise/fall times fast (<100 ns) to avoid the linear-region losses that dominate in small-signal MOSFET arrays; a 10 Ω gate series resistor typically damps ringing without slowing switching unnecessarily.
This page synthesizes verified distributor stock, drop-in alternatives from Infineon's own OptiMOS™ family, and practical design notes not found in the manufacturer datasheet itself, giving engineers a one-stop view of the BSD235CH6327XTSA1 for sourcing, second-sourcing, and PCB layout decisions.
Bộ thay thế dễ dàng lắp đặt cho BSD235CH6327XTSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSD235CH6327XTSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Part Number, Configuration.
BSD235CH6327
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSD235CN6327
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSD235C L6327
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSH205G2R
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
SI1553DL-T1-GE3
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →DMC2700UDG-7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSD235CH6327XTSA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ |
| Configuration | N+P complementary dual MOSFET |
| Drain-to-Source Voltage (VDS) | 20 V |
| N-Channel Continuous Drain Current (ID) | 950 mA |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | 500 mW |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS™ low-voltage |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C (junction) |
| Polarity | N-channel + P-channel |
| Channel Mode | Enhancement |
| Trạng thái RoHS | Compliant (lead-free) |
| Cấp MSL | 1 |
| Số chân | 6 |
Cấu hình chân BSD235CH6327XTSA1
| Chân 1 | S1 — Source of MOSFET 1 (typically n-channel) |
| Chân 2 | G1 — Gate of MOSFET 1 (typically n-channel) |
| Chân 3 | D2 — Drain of MOSFET 2 (typically p-channel) |
| Chân 4 | S2 — Source of MOSFET 2 (typically p-channel) |
| Chân 5 | G2 — Gate of MOSFET 2 (typically p-channel) |
| Chân 6 | D1 — Drain of MOSFET 1 (typically n-channel) |
Ứng dụng tiêu biểu
BSD235CH6327XTSA1 phù hợp cho 6 Áp dụngs: USB-PD Load Switch, Battery Protection / 1-Cell Li-ion Management, Half-Bridge / H-Bridge Motor Driver (small signal), Level Shifter / Logic Translator, Synchronous Rectifier Signal Stage, Relay / Solenoid Driver.
USB-PD Load Switch
The BSD235CH6327XTSA1 is well matched to USB-Power-Delivery (USB-PD) load switches because its 20 V VDS comfortably exceeds the 5 V / 9 V / 15 V / 20 V PD source voltages, the 950 mA n-channel ID handles 900 mA USB-3.0 inrush, and the p-channel section can act as a high-side 5 V switch. Used as a back-to-back N+P pair, it isolates the source from the sink until the PD contract is negotiated, preventing leakage from unselected sources. Place a 100 kΩ pull-down on the n-channel gate and a 100 kΩ pull-up on the p-channel gate to define a safe default-off state.
Được đề xuất
Battery Protection / 1-Cell Li-ion Management
For 1-cell Li-ion battery management, the BSD235CH6327XTSA1 is used as the discharge / charge FET pair in a protection circuit where its 20 V VDS comfortably exceeds the 4.2 V max charge voltage. The 950 mA n-channel handles up to 2C discharge current, while the p-channel handles charging paths. The OptiMOS™ low-voltage process gives low VGS(th) (~1.0 V typical) which simplifies driving from a single-cell Li-ion logic level. Place a TVS such as SMAJ16A across the pack to clamp inductive transients during abnormal disconnect.
Được đề xuất
Half-Bridge / H-Bridge Motor Driver (small signal)
For small DC motors (≤500 mA continuous) such as vibration motors, focus actuators, or miniature fans, the BSD235CH6327XTSA1 forms a compact half-bridge or full H-bridge when two devices are used. Its complementary polarity means each half-bridge needs only one part, saving PCB area over using two N-only arrays. The 20 V VDS supports up to 18 V motor rails, and the 500 mW dissipation budget is sufficient for short-duty-cycle motion control. Add 100 Ω gate resistors and a 10 kΩ gate-source pull-down/up to keep the half-bridge in a defined state during MCU reset.
Được đề xuất
Level Shifter / Logic Translator
The BSD235CH6327XTSA1 is widely used as a discrete level-shifter pair: the n-channel implements a low-side reference translation, and the p-channel pulls the high-side rail up to a higher voltage (e.g., translating 1.8 V GPIO to 3.3 V or 5 V peripherals). The 20 V VDS accommodates 5 V, 3.3 V, and 1.8 V rails with margin. Low gate charge (Qg ~ 0.5 nC typical) means the translator can switch at 1 MHz+ with negligible dynamic loss. Use 10 Ω series gate resistors to dampen the LC ringing between the gate trace and the source/drain capacitances.
Được đề xuất
Synchronous Rectifier Signal Stage
In a low-power DC-DC converter, the BSD235CH6327XTSA1 can serve as the low-side synchronous-rectifier signal driver — using the n-channel as the synchronous FET gate-drive buffer — in converters up to about 3 A. The 20 V VDS supports 12 V input rails with substantial margin, and the fast switching transitions of OptiMOS™ minimize dead-time. For higher currents, two BSD235C in parallel share conduction losses. Place a Schottky diode across the synchronous FET body-diode to reduce reverse-recovery loss and protect against duty-cycle overshoot.
Được đề xuất
Relay / Solenoid Driver
For driving small 5 V or 12 V relays and solenoids, the BSD235CH6327XTSA1 is well suited: the n-channel acts as the low-side driver, the p-channel as the high-side return path, and the 950 mA / 530 mA currents handle most signal-relay coils. The 20 V VDS comfortably exceeds 12 V relay rail. Add a flyback diode (e.g., 1N4148) across the relay coil to absorb the inductive kick when the FET turns off. For 24 V industrial relays, choose a higher-VDS part (e.g., 30 V or 40 V OptiMOS™) instead.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSD235CH6327XTSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSD235CH6327 | BSD235CN6327 | BSD235C L6327 | BSH205G2R | SI1553DL-T1-GE3 | DMC2700UDG-7 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT363-6-1 (SOT-363) | PG-SOT363-6-1 - same | PG-SOT363-6-1 - same | PG-SOT363-6-1 - same | SOT-363 - same | SOT-363 - same | SOT-363 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Vishay Intertechnology | Diodes Incorporated |
| Polarity | N + P complementary | N + P complementary | N + P complementary | N + P complementary | Dual P-channel | N + P complementary | N + P complementary |
| VDS max | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Technology | OptiMOS™ low-voltage | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ | Siliconix TrenchFET | Diodes MOSFET |
Bảo phân biệt quan trọng
- Complementary N+P in a single SOT-363 — saves one PCB footprint vs. two separate N-only or P-only dual arrays (vsSI1553DL-T1-GE3)
- OptiMOS™ low-voltage technology — Infineon's market-leading trench MOSFET process (vsDMC2700UDG-7)
- Wide operating junction temperature range -55 °C to +150 °C — industrial-grade qualification (vsBSH205G2R)
- AEC-qualified OptiMOS™ process — Infineon's automotive-grade silicon-on-chip technology (vsSI1553DL-T1-GE3)
Ghi chú thiết kế
The PG-SOT363-6-1 package has a typical θJA around 350 °C/W on a standard 1 oz JEDEC EIA/JESD51 2s2p test board. At total Ptot = 500 mW, the junction temperature rise above 25 °C ambient is roughly 175 °C, which exceeds the 150 °C Tj max. Practical guidance: keep total package dissipation below 250 mW (derate by 50 %) to maintain Tj ≤ 125 °C in continuous operation. Add thermal vias under the central SOT-363 pad and copper pours on both sides of the PCB if higher dissipation is needed.
Keep the gate-drive traces short (<5 mm) and route them away from the drain node to minimize the Cgd * dv/dt induced turn-on. A 10 Ω gate series resistor (Rgate) damps the LC resonance between gate-trace inductance and the FET's Ciss, without slowing switching significantly. Place a 100 kΩ gate-source resistor on each FET to keep the device in a defined off state during MCU reset or POR — important for half-bridge configurations where a single high-side turn-on without a low-side can cross-conduct.
Do not assume the BSD235CH6327XTSA1 pinout is the same as every SOT-363 dual MOSFET. The standard BSD235C layout (S1, G1, D2, S2, G2, D1) differs from some Vishay Siliconix parts (e.g., Si1553DL uses 1=D1, 2=G1, 3=S2, 4=G2, 5=D2, 6=S1). Always re-verify pinout against the datasheet before PCB swap. Exceeding the 20 V VDS rating — even transient — destroys the die; add a TVS such as SMAJ18CA across the drain-source of each FET for inductive-load protection.
Thông tin tuân thủ
RoHS compliant per Infineon product page; OptiMOS™ is lead-free finish. Not AEC-Q100 qualified by default — confirm with Infineon automotive part number if automotive-grade is required.
