IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
MPN: IAUC120N06S5N011ATMA1 ✓ Hoạt độngIAUC120N06S5N011ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. N-channel enhancement-mode MOSFETs like this one are the workhorse of low-voltage power conversion: when Vgs exceeds the threshold, the device conducts; when Vgs is pulled low, it blocks. OptiMOS-5 represents Infineon's 5th-generation trench architecture, which lowers Rds(on) per unit silicon area, reduces gate charge (Qg), and improves body-diode ruggedness. In the broader taxonomy, this part is a discrete power MOSFET within the power semiconductor family used in DC-DC converters, motor drives, and load switches.
Key features include 1.1 mΩ typical Rds(on) at Vgs=10 V, 60 V Vdss breakdown voltage, ±20 V Vgs rating, and an integrated ESD-protected gate. The SSO8 5x6 package provides a low thermal resistance path (RthJC around 0.8 C/W typical) and is designed for top-side cooling on PCB. The part is optimized for normal-level gate drive (10 V) and supports high-frequency switching up to several hundred kHz in synchronous rectification stages. AEC-Q101 qualification plus automotive-grade reliability make it suited to under-the-hood and chassis electronics.
The IAUC120N06S5N011ATMA1 uses Infineon's advanced OptiMOS-5 trench cell design, which provides superior figure-of-merit (FOM = Rds(on) × Qg) compared to previous generations. This translates directly to lower switching losses in high-frequency DC-DC converters and reduced conduction losses in high-current paths. The robust body diode supports synchronous rectification without additional clamp protection in most topologies.
Typical applications include automotive 12 V/24 V DC-DC converters (buck and synchronous rectification stages), eFuse and battery protection FETs in 12 V Li-ion systems, motor control H-bridges (BLDC, EPS), LED headlight drivers, and USB-PD high-current load switches. Its low Rds(on) minimizes I²R losses at 100 A+ continuous currents, which is critical for thermal headroom in compact automotive modules.
When designing with this MOSFET, ensure the gate driver delivers 10 V Vgs for full enhancement. Layout matters: place the source sense (Kelvin connection) close to the source pad to avoid Rds(on) inflation. Thermal management should account for the high current capability - a single 1 oz copper pour on a 4-layer FR4 board may need to be supplemented with thermal vias under the exposed pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a consolidated engineering reference for IAUC120N06S5N011ATMA1 selection and procurement.
Bộ thay thế dễ dàng lắp đặt cho IAUC120N06S5N011ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC120N06S5N011ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, MSL Level, Operating Temperature Range, Technology, Product Family.
IAUC120N06S5L011ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L015ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N010ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N04S6N009ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7L033ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S5L280DATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5N011ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | 310 A (Tj) |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | ±20 V |
| Power Dissipation (Pd) | 188 W (Tc=25°C) |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C (Tj) |
| Hộp | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
Cấu hình chân IAUC120N06S5N011ATMA1
| Chân 1 | G — Gate input |
| Chân 2 | D — Drain (connected to exposed pad) |
| Chân 3 | D — Drain |
| Chân 4 | D — Drain |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | S — Source (return path) |
Khu vực hoạt động an toàn (TC=25°C, Vgs=10V)
Ứng dụng tiêu biểu
IAUC120N06S5N011ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V/24V DC-DC Synchronous Rectification, Battery Protection and eFuse (12V Li-ion/LiFePO4), BLDC Motor Drive H-Bridge (EPS, eCompressors), High-Current USB-PD Load Switch, OR-ing and Power Muxing in Redundant Systems, LED Headlight Driver and Daytime Running Lamps.
Automotive 12V/24V DC-DC Synchronous Rectification
The IAUC120N06S5N011ATMA1's 1.1 mΩ typical Rds(on) and 120 A continuous drain current make it an ideal synchronous rectifier in 24 V-to-12 V and 12 V buck/boost converters for EV powertrain and chassis ECUs. The low Rds(on) directly reduces I²R conduction losses at 50-100 A load currents, where every milliohm translates to several watts of dissipation. In a typical 2 kW buck converter switching at 200-400 kHz, the synchronous FET carries the majority of the load current during the low-side phase; this part's low Qg also minimizes switching losses. The 60 V Vdss provides ample margin for 24 V bus transients including load-dump events clamped below 35-40 V. AEC-Q101 qualification and -55°C to +175°C Tj range suit under-hood placements.
Được đề xuất
Battery Protection and eFuse (12V Li-ion/LiFePO4)
In 12 V battery packs (Li-ion or LiFePO4), the IAUC120N06S5N011ATMA1 serves as a high-side or low-side disconnect FET. The 1.1 mΩ Rds(on) keeps continuous-path losses low during normal operation, while the 310 A pulsed rating handles inrush and short-circuit events. The 60 V Vdss covers 4S LiFePO4 stacks and 3S-4S Li-ion with comfortable margin. The integrated gate ESD protection simplifies the BMS gate-driver interface, and AEC-Q101 qualification supports automotive battery management modules. In eFuse applications, the part's low Rds(on) and high current capability allow designers to consolidate multiple lower-rated FETs into a single solution, reducing PCB area and thermal design complexity.
Được đề xuất
BLDC Motor Drive H-Bridge (EPS, eCompressors)
The IAUC120N06S5N011ATMA1 in a 3-phase or H-bridge configuration drives BLDC motors in electric power steering (EPS) and electric compressor applications. The 120 A continuous rating and 1.1 mΩ Rds(on) keep conduction losses in the inverter below 1% at typical 50-80 A phase currents, which is critical for motor efficiency and thermal envelope. The OptiMOS-5 cell design provides robust body-diode reverse recovery, supporting hard switching in motor PWM at 20-50 kHz without requiring external snubbers. The PG-TDSON-8-53 package's 188 W power dissipation rating (at Tc=25°C) gives designers substantial thermal headroom when properly heatsunk with a thermal via array.
Được đề xuất
High-Current USB-PD Load Switch
For USB Power Delivery (USB-PD 3.1 EPR) at 28 V/36 V/48 V bus voltages and 5-20 A currents, the IAUC120N06S5N011ATMA1 acts as a high-side load switch. Its 60 V Vdss handles 28 V and 36 V nominal rails with substantial headroom, while the 1.1 mΩ Rds(on) at 10 V Vgs supports continuous 5 A paths (5 V × 1.1 mΩ = 25 mW) with negligible voltage drop. The 120 A rating allows multi-port hubs to use a single FET per port. The 5 V Vgs logic-level variant (IAUC120N06S5L011ATMA1) may be preferred for direct MCU GPIO control without a separate driver.
Được đề xuất
OR-ing and Power Muxing in Redundant Systems
In redundant 12 V/24 V supply systems, the IAUC120N06S5N011ATMA1 is used as a low-Rds(on) OR-ing FET to combine two power sources (e.g., main + backup) with minimal forward drop. At 30 A load and 1.1 mΩ Rds(on), the OR-ing dissipation is approximately 1 W per FET - low enough to manage without active cooling. The 60 V Vdss supports 24 V nominal buses directly. AEC-Q101 qualification allows use in chassis and powernet ECUs. The fast body diode and good dv/dt ruggedness minimize switching transients during power-mux events.
Được đề xuất
LED Headlight Driver and Daytime Running Lamps
In matrix LED headlight and daytime running lamp (DRL) drivers, the IAUC120N06S5N011ATMA1 functions as the buck-converter switching FET or high-side load switch. The 60 V rating handles 24 V commercial-vehicle electrical systems, while the 1.1 mΩ Rds(on) ensures 95%+ efficiency at 5-10 A load. The OptiMOS-5 technology reduces EMI due to the part's low Qgd, which keeps dv/dt sharp yet controlled. AEC-Q101 and wide Tj range suit engine-compartment-mounted LED driver modules.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC120N06S5N011ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC120N06S5L011ATMA1 | IAUC120N06S5L015ATMA1 | IAUC120N04S6N010ATMA1 | IAUC120N04S6N009ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-53 (SSO8 5x6) | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same |
| Drain-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 40 V | 40 V | 40 V |
| Rds(on) max at 10V Vgs | 1.1 mΩ | 1.1 mΩ | 1.5 mΩ | 1.0 mΩ | 0.9 mΩ | 1.1 mΩ |
| Continuous Drain Current (Id) | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A |
| Gate Drive Voltage | 10 V (normal level) | 4.5 V (logic level) | 4.5 V (logic level) | 10 V (normal level) | 10 V (normal level) | 10 V (normal level) |
| Technology Generation | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 |
| Automotive Grade | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Bảo phân biệt quan trọng
- Normal-level (10V) gate drive optimized for traditional gate drivers (vsIAUC120N06S5L011ATMA1)
- 60 V Vdss provides 24 V automotive headroom (vsIAUC120N04S6N010ATMA1 (40 V))
- Mature OptiMOS-5 platform with proven automotive reliability (vsISC011N04NM7VATMA1 (OptiMOS-7, 40 V))
Ghi chú thiết kế
At 60 A continuous current through a 1.1 mΩ Rds(on) MOSFET, the conduction dissipation is P = I² × R = 60² × 0.0011 ≈ 4 W. The PG-TDSON-8-53 package has RthJC of approximately 0.8 C/W, giving a 3.2 C rise above case temperature. With PCB RthJA of approximately 40 C/W on a 1 oz 4-layer board with thermal-via array, the junction temperature rises 160 C above ambient at full continuous current. Estimated thermal margin is sufficient for sustained 60 A operation at 85 C ambient. For 100 A+ applications, place multiple thermal vias under the exposed pad and consider a copper spreader.
The PG-TDSON-8-53 (SSO8 5x6) exposes the Drain via the bottom thermal pad, which is internally bonded to pins 2-7. This consolidated drain structure minimizes source-inductance loop area. Place a Kelvin-source connection at pin 8 with a separate trace to the gate driver return, avoiding shared current paths with the high-current drain. Use 2 oz copper on the drain pours and a 4x4 array of 0.3 mm thermal vias under the exposed pad to optimize both thermal and electrical performance.
Do not exceed ±20 V on the gate (Vgs) - static discharge or gate-driver overvoltage can permanently damage the thin gate oxide. The Infineon datasheet specifies 100% Rg-tested parts, but external protection (TVS or zener clamp) is recommended in 24 V load-dump environments. Also observe SOA limits: at 60 V Vds and high Id, the part enters linear-mode operation and dissipates significant power; pulsed operation exceeding SOA can cause thermal runaway. Lastly, derate Id for Tj above 25 C - the 120 A rating is at Tc=25 C, and at Tj=175 C the maximum current is significantly lower.
Thông tin tuân thủ
AEC-Q101 qualified (note: part is qualified to Q101, not Q100 - both are automotive stress-test standards with Q101 being the discrete-component variant). RoHS and lead-free confirmed by Infineon product page and distributor listings.
