IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
MPN: IAUC50N08S5N102ATMA1 ✓ Hoạt độngIAUC50N08S5N102ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor. The "N-channel enhancement-mode" variant is the most common type for low-side and high-side switching because it is driven by a positive gate voltage and offers the lowest RDS(on) per unit silicon area. OptiMOS 5 is Infineon's fifth-generation 80 V platform, optimised for low conduction loss and fast switching in synchronous rectification and DC/DC conversion stages.
Key electrical characteristics include a drain-source voltage rating of 80 V, continuous drain current of 50 A at 25 °C case temperature, pulsed current capability typically in the 200 A range, gate threshold of ±20 V maximum, total gate charge of 21 nC at 10 V, and input capacitance of 1394 pF at 40 V. The 10.2 mΩ on-resistance minimises conduction loss, while the 21 nC Qg supports fast switching at frequencies from 100 kHz to 1 MHz.
The device uses Infineon's advanced OptiMOS 5 trench process, which reduces cell pitch and gate charge versus previous generations. The PG-TDSON-8-33 package features an exposed drain pad that delivers a junction-to-case thermal resistance (RthJC) suitable for high-current continuous operation on FR-4 PCB copper, with proper thermal via array beneath the drain tab.
Typical applications include automotive 48 V mild-hybrid DC/DC converters, electric power steering (EPS) motor drives, body-electronics load switches, battery-management protection FETs, and industrial synchronous-rectifier stages. AEC-Q101 qualification makes it directly suitable for under-the-hood automotive environments.
When designing with this part, observe the maximum junction temperature of 175 °C and ensure the PCB thermal via pattern under the drain pad is sized to keep Tj below 125 °C at worst-case continuous load. The ±20 V Vgs rating requires gate-drive design that limits transient overshoot, particularly in half-bridge topologies.
Bộ thay thế dễ dàng lắp đặt cho IAUC50N08S5N102ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUC50N08S5N102ATMA1 (cùng hình factor và footprint) — khác nhau ở Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Automotive Qualification.
IAUCN08S7L033ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC60N04S6L030HATMA1
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Xem tài liệu →IAUC120N04S6N010ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IAUC120N06S5L015ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPC50N04S5L5R5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB60R280P7ATMA1
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$0.88 / Đơn vị
Xem tài liệu →IAUC50N08S5N102ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 50 A |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Total Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | 60 W |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Hộp / Vỏ | PG-TDSON-8-33 |
| Kiểu lắp đặt | Surface Mount |
| Qualification | AEC-Q101 |
| Trạng thái RoHS | Compliant |
Cấu hình chân IAUC50N08S5N102ATMA1
| Chân 1 | Source — Source terminal (pin 1) |
| Chân 2 | Source — Source terminal (pin 2) |
| Chân 3 | Source — Source terminal (pin 3) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain terminal (top side, internally connected to tab) |
| Chân 6 | Drain — Drain terminal (top side, internally connected to tab) |
| Chân 7 | Drain — Drain terminal (top side, internally connected to tab) |
| Chân 8 | Drain — Drain terminal (top side, internally connected to tab) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IAUC50N08S5N102ATMA1 phù hợp cho 6 Áp dụngs: 48V Mild-Hybrid DC/DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Body Electronics Load Switch, Battery Management Protection FET, Industrial Synchronous Rectifier Stage, Telecom 48V Hot-Swap Controller.
48V Mild-Hybrid DC/DC Converter
The IAUC50N08S5N102ATMA1's 80 V VDS rating provides 32 V of headroom above the 48 V automotive bus, while its 10.2 mΩ RDS(on) at 25 A minimises conduction loss in the synchronous-rectifier stage of 48-12 V buck converters. The 21 nC total gate charge supports switching frequencies of 100-300 kHz, enabling compact magnetics. AEC-Q101 qualification allows direct deployment under-the-hood without additional qualification cycles.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
In EPS motor inverter stages the IAUC50N08S5N102ATMA1 serves as the low-side or high-side switching element in a three-phase bridge, where its 50 A continuous current rating covers peak torque demands up to 30-40 A per phase. The PG-TDSON-8-33 exposed drain pad provides the low thermal impedance required for sustained motor current. AEC-Q101 qualification and 175 °C maximum junction temperature support under-hood ambient conditions.
Được đề xuất
Automotive Body Electronics Load Switch
As a high-side or low-side load switch for body control modules, the IAUC50N08S5N102ATMA1 handles inrush currents from capacitive loads such as LED headlamps, HVAC blowers, and seat motors. Its 10.2 mΩ RDS(on) limits steady-state dissipation to roughly 5 W at 25 A, allowing PCB-only cooling. AEC-Q101 and ±20 V VGS rating ensure reliability across automotive temperature and load-dump transients.
Được đề xuất
Battery Management Protection FET
In 12 V and 48 V battery management systems the IAUC50N08S5N102ATMA1 functions as the pack-side or load-side protection MOSFET, interrupting current flow during over-current, short-circuit, or reverse-polarity events. The 80 V VDS rating covers transients on 48 V packs, while the 10.2 mΩ on-resistance minimises continuous power loss during normal operation. AEC-Q101 supports deployment in EV battery packs.
Được đề xuất
Industrial Synchronous Rectifier Stage
In industrial 24 V and 48 V buck or forward converters the IAUC50N08S5N102ATMA1 operates as the synchronous rectifier MOSFET, replacing Schottky diodes to achieve 2-5 percent efficiency gains. Its 80 V VDS rating supports 24 V bus rails with 100 percent transient margin, and the 21 nC Qg enables operation at 200-500 kHz switching frequencies. The PG-TDSON-8-33 package is suitable for forced-air or natural-convection cooling in industrial enclosures.
Được đề xuất
Telecom 48V Hot-Swap Controller
In -48 V telecom hot-swap applications the IAUC50N08S5N102ATMA1 acts as the inrush-limiting and disconnect FET on the negative rail of a 48 V bus. The 80 V VDS rating easily tolerates the 48 V nominal plus transients, and the 10.2 mΩ RDS(on) keeps voltage drop and heat dissipation manageable at 30-40 A continuous load. AEC-Q101 over-qualification ensures long-term reliability in always-on telecom equipment.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUC50N08S5N102ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN08S7L033ATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N010ATMA1 | BSC076N04NDATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 40 V | 40 V | 40 V |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | 3.3 mΩ | 3.0 mΩ | 1.0 mΩ | 7.6 mΩ | 5.5 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- 80 V VDS rating supports 48 V mild-hybrid automotive bus with 32 V headroom (vsIAUC60N04S6L030HATMA1)
- AEC-Q101 qualified with full automotive reliability pedigree (vsIPC50N04S5L5R5ATMA1)
- Balanced RDS(on) vs Qg trade-off at 10.2 mΩ / 21 nC (vsIAUCN08S7L033ATMA1)
Ghi chú thiết kế
Estimated: at continuous 25 A load with RDS(on) of 10.2 mΩ, conduction loss is approximately P = I² × RDS(on) = 625 × 0.0102 = 6.4 W. Using a standard 4-layer FR-4 PCB with a 1 oz copper drain pad and 25 thermal vias (0.3 mm drill, 1 mm pitch), the junction-to-ambient thermal resistance RthJA is approximately 50 C/W, resulting in a 95 C junction temperature rise above 25 C ambient. For sustained operation at 25 A continuous, ensure case temperature stays below 125 C by adding a thermal via array and copper pour area of at least 100 mm² beneath the exposed drain pad.
The PG-TDSON-8-33 package has the drain connection on the top exposed pad, which must be soldered to a copper land pattern with an array of thermal vias to the opposite PCB layer. Keep the gate-trace length below 5 mm to minimise parasitic inductance, which can cause gate-oscillation and false turn-on in half-bridge topologies. Place a 10 kΩ gate-source pull-down resistor close to the gate pin to ensure the MOSFET stays off during controller start-up.
Do not exceed the ±20 V VGS absolute maximum rating, even as a transient. In half-bridge applications the high-side MOSFET can experience VGS transients above 20 V due to source-inductance and dv/dt effects; add a gate-source clamping diode or TVS array if the gate-drive design produces overshoot. Also ensure that VDS transients during switching stay below 80 V by adding an RC snubber or TVS across the drain-source terminals if long wiring or inductive loads are present.
Thông tin tuân thủ
AEC-Q101 qualified (note: AEC-Q101, not AEC-Q100 - these are different standards, with Q101 specific to discrete semiconductors). RoHS and halogen-free per Infineon product page. Not subject to REACH SVHC listing as of 2026-09-15.
