IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon
MPN: IAUCN04S7N012ATMA1 ✓ Hoạt độngIAUCN04S7N012ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to deliver high current to a load with minimal conduction loss. MOSFETs sit within the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS-7 platform is Infineon's latest-generation trench MOSFET family optimized for switching power-conversion applications, providing reduced gate charge, lower output capacitance, and improved thermal behavior versus prior generations. This 40 V rating places it in the low-voltage sweet spot for 12 V automotive systems, where transients from load-dump can spike above 35 V and still leave headroom.
Key features include 1.2 mΩ maximum RDS(on) at VGS = 10 V, 120 A continuous drain current at 25 °C, an automotive-grade qualification, and an exposed-drain PG-TDSON-8-34 pad that delivers a junction-to-ambient thermal resistance suitable for high-current switching. The package is halogen-free and qualified for the harsh under-hood automotive environment. The 8-pin layout provides a large source-connected thermal pad that doubles as the electrical source connection.
The OptiMOS-7 cell design shrinks figure-of-merit (FOM = RDS(on) × Qg) versus prior generations, which directly reduces switching losses in high-frequency converters. For a 12 V automotive bus running at 250 kHz, the IAUCN04S7N012 enables synchronous-rectifier stages with sub-nanosecond dead-time tolerance and minimal reverse-recovery charge. The trench-gate structure delivers a low threshold voltage suitable for direct 3.3 V microcontroller gate-drive interfaces.
Typical applications include automotive 12 V BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current synchronous rectification in DC-DC converters, battery-disconnect switches in mild-hybrid 48 V-12 V systems, and high-side load switches in ECU power distribution. The 120 A rating also supports server VRM stages where 12 V to point-of-load conversion demands extreme current density.
When designing with this part, prioritize gate-drive strength: a 10 V VGS is required to reach the 1.2 mΩ RDS(on) figure, so a dedicated gate-driver IC is preferred over direct MCU drive. The exposed thermal pad must be soldered to a sufficiently large copper pour to achieve the rated continuous current without thermal runaway.
This page synthesizes distributor stock, drop-in alternatives sourced from cross-reference data, and practical design notes that go beyond the datasheet's typical-application section to help engineers make a sourcing decision.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7N012ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7N012ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, MSL Level, Automotive Qualification, FET Type.
IAUC100N10S5N040ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPG20N04S4L08ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBQA1401
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUCN04S7N012ATMA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET |
| Technology | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ |
| Hộp | PG-TDSON-8-34 (8-PowerTDFN) |
| Kiểu lắp đặt | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Cấp MSL | 1 |
| Polarity | N-Channel |
Cấu hình chân IAUCN04S7N012ATMA1
| Chân 1 | Source — Source connection (kelvin source for gate return) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input (10 V VGS for full RDS(on)) |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Source — Source connection |
| Chân EP | Drain — Drain connection and thermal pad (solder to large copper pour) |
Ứng dụng tiêu biểu
IAUCN04S7N012ATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V BLDC Motor Drive (EPS, water pump, oil pump, fan), High-Current Synchronous Rectification in 12V-to-PoL DC-DC, Battery-Disconnect Switch in 48V Mild-Hybrid Systems, Server & Datacenter 12V VRM Stages, Automotive ECU High-Side Load Switch, Industrial High-Power SMPS (Welding, UPS, Solar Inverter).
Automotive 12V BLDC Motor Drive (EPS, water pump, oil pump, fan)
The IAUCN04S7N012ATMA1 is purpose-built for 12 V automotive BLDC drives that drive pumps, fans, and electric-power-steering motors. Its 1.2 mΩ RDS(on) at VGS = 10 V keeps conduction loss under 1 W at 30 A continuous phase current, while the 120 A peak rating handles inrush and short-circuit events. The AEC-Q101 qualification and halogen-free PG-TDSON-8-34 package suit under-hood environments where junction temperatures regularly exceed 150 °C. Design tip: place the FET as close as possible to the phase node and use a 4-layer PCB with a 2 oz inner copper pour to sink heat.
Được đề xuất
High-Current Synchronous Rectification in 12V-to-PoL DC-DC
In 12 V input, point-of-load DC-DC converters targeting 50-100 A output, the IAUCN04S7N012ATMA1 serves as the low-side synchronous rectifier FET. Its low RDS(on) keeps full-load efficiency above 96%, while the OptiMOS-7 cell design delivers low Qg and Qrr, reducing switching loss at 300-500 kHz switching frequencies. Designers should use a dedicated gate-driver (UCC27211A or similar) to achieve the 10 V VGS needed to reach the 1.2 mΩ on-state resistance figure.
Được đề xuất
Battery-Disconnect Switch in 48V Mild-Hybrid Systems
In 48 V mild-hybrid electrical architectures, the IAUCN04S7N012ATMA1 can serve as a high-current battery-disconnect or pre-charge switch when paired with a fault-rated gate driver. Its 120 A continuous rating comfortably handles 10-15 kW peak loads, and the 40 V VDS provides margin against 48 V bus transients when combined with a TVS clamp. The automotive qualification streamlines PPAP documentation for OEM programs.
Được đề xuất
Server & Datacenter 12V VRM Stages
High-density server VRM stages converting 12 V to sub-1 V at 100+ A per phase benefit from the IAUCN04S7N012ATMA1's ultra-low RDS(on). The exposed-drain PG-TDSON-8-34 pad enables direct cooling via top-side heatsink attach, supporting continuous operation at high ambient (45-55 °C) in 1U server chassis. The OptiMOS-7 figure-of-merit advantage compounds in multi-phase topologies where per-FET conduction loss compounds across phases.
Được đề xuất
Automotive ECU High-Side Load Switch
The IAUCN04S7N012ATMA1 can be configured as a high-side load switch for ECU power distribution, replacing mechanical relays with solid-state switching. Its 120 A rating handles peak inrush for solenoids, lights, and motors, while the 1.2 mΩ RDS(on) keeps steady-state loss negligible. The automotive qualification and halogen-free package meet OEM environmental specs; pair with a current-sense amplifier for fault reporting.
Được đề xuất
Industrial High-Power SMPS (Welding, UPS, Solar Inverter)
Outside automotive, the IAUCN04S7N012ATMA1's 40 V / 120 A rating makes it attractive for industrial SMPS stages operating from 24 V or 36 V intermediate buses. Its low RDS(on) reduces heatsink requirements in space-constrained welding inverters and UPS systems. Use as a synchronous rectifier in 24 V-input telecom DC-DC bricks where high efficiency and ruggedness outweigh the automotive-grade cost premium.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7N012ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUC100N10S5N040ATMA1 | IPG20N04S4L08ATMA1 | VBQA1401 |
|---|---|---|---|---|
| Package | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-34 - same | PG-TDSON-8 - same family | PG-TDSON-8-34 - same |
| Brand | Infineon | Infineon | Infineon | VBsemi |
| Drain-Source Voltage (VDS) | 40 V | 100 V | 40 V | 40 V |
| Technology | OptiMOS-7 | OptiMOS-7 (100 V class) | OptiMOS (previous gen) | Trench MOSFET |
Bảo phân biệt quan trọng
- Ultra-low RDS(on) of 1.2 mΩ at 10 V VGS in 40 V class (vsIPG20N04S4L08ATMA1)
- OptiMOS-7 generation with optimized figure-of-merit (vsOlder OptiMOS generations)
- AEC-Q101 automotive qualification with halogen-free package (vsIndustrial-only 40 V N-channel alternatives)
Ghi chú thiết kế
The PG-TDSON-8-34 package's exposed drain pad MUST be soldered to a copper pour of at least 100 mm² (per-layer, top side preferred) to approach the rated 120 A continuous current. Estimated: at 30 A continuous with 1.2 mΩ RDS(on), conduction loss is ~1.1 W; without a 100 mm² pour, junction-to-ambient thermal resistance exceeds 50 °C/W and the part will derate severely. For continuous currents above 50 A, add a top-side heatsink or use forced-air cooling.
Minimize the high-current loop between drain, source, and the output capacitor. Place input/output capacitors directly at the drain and source pads, not 5-10 mm away. The gate-drive loop (gate resistor -> gate pin -> source pin -> back to driver ground) should be a separate, small loop to avoid parasitic turn-on. Use a 4-layer PCB with a dedicated ground plane under the FET to reduce switching noise coupling.
Do not drive the gate directly from a 3.3 V microcontroller GPIO - the VGS(th) of the IAUCN04S7N012ATMA1 is typically 1.7-2.7 V, but full RDS(on) of 1.2 mΩ requires VGS = 10 V. Use a dedicated gate driver (e.g., Infineon EiceDRIVER or TI UCC27211A). Also: never exceed the VGS absolute maximum (±20 V for most OptiMOS-7 parts); add a 10 kΩ gate-source resistor to prevent floating-gate turn-on during transient events.
Use a gate resistor in the 4.7-10 Ω range to slow the switching edge (dV/dt) and reduce EMI. Faster edges (sub-5 ns) generate CM currents through the heatsink-to-ground capacitance; slower edges (10-20 ns) trade a few percent efficiency for 10-20 dB EMI reduction. For CISPR 25 Class 5 automotive EMI compliance, consider a snubber or RC damper across the drain-source.
Thông tin tuân thủ
AEC-Q101 qualified per Infineon product page. Halogen-free and RoHS compliant per datasheet.
