BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
MPN: BSC094N06LS5ATMA1 ✓ Hoạt độngBSC094N06LS5ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals. The OptiMOS™ 5 family is Infineon's fifth-generation trench MOSFET platform engineered for switching power conversion; compared to planar MOSFETs of the same voltage class, OptiMOS 5 devices deliver lower RDS(on), lower gate charge (Qg), lower output charge (Qoss), and better Figure-of-Merit (FOM = RDS(on) × Qg), which translates directly into reduced conduction and switching losses. The "LS" in the part number denotes the logic-level gate variant, allowing full enhancement at VGS = 4.5 V — critical for direct microcontroller GPIO drive in 5 V and 3.3 V systems.
Key differentiating specifications include 9.4 mΩ max RDS(on) at VGS=10 V, ultra-low Qg (typical ~9 nC) for fast switching edges, an integrated Schottky-like body diode with low Qrr for reduced dead-time losses in half-bridge topologies, and a 36 W power dissipation rating at TC=25 °C. The SuperSO8 5x6 footprint delivers a low thermal resistance (~1.0 °C/W RthJC max) suitable for high-current POL (point-of-load) converters.
Typical applications include synchronous rectification in 48 V telecom and server bus converters, USB-PD and quick-charge adapter output stages, DC-DC buck and half-bridge motor drive stages, wireless-charging resonant converters, and battery-protection / load-switch circuits in 12 V industrial systems. The combination of low FOM and 4.5 V VGS drive makes it particularly well suited to high-frequency (>300 kHz) SMPS designs.
When designing with this part, place the gate driver within 5 mm of the gate pad to suppress ringing, and select a gate resistor (typically 10–47 Ω) that balances switching loss against EMI. Confirm that drain current derating versus case temperature remains inside SOA at your worst-case operating point, and that VDS transients during turn-off are clamped below 60 V by snubber or TVS protection.
This page synthesizes distributor pricing (as of 2026-09-13), parametric drop-in alternatives in the same SuperSO8 5x6 footprint, and practical layout notes not assembled in the manufacturer datasheet alone — useful for both new design selection and field-replacement decisions.
Bộ thay thế dễ dàng lắp đặt cho BSC094N06LS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC094N06LS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Operating Junction Temperature.
BSC0901NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0906NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N012ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD060N03LGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSD235CH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF7832TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC094N06LS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 |
| Technology | OptiMOS™ 5 (logic-level) |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A |
| RDS(on) max at VGS=10 V | 9.4 mΩ |
| Power Dissipation (PD) at TC=25°C | 36 W |
| Nhiệt độ mối nối hoạt động | -55 °C to +150 °C |
| Hộp | PG-TDSON-8-6 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSC094N06LS5ATMA1
| Chân 1 | SOURCE — Source connection (also tied to exposed pad region) |
| Chân 2 | SOURCE — Source connection |
| Chân 3 | SOURCE — Source connection |
| Chân 4 | GATE — Gate drive input (logic-level, 4.5 V enhancement) |
| Chân 5 | DRAIN — Drain connection (high-voltage) |
| Chân 6 | DRAIN — Drain connection |
| Chân 7 | DRAIN — Drain connection |
| Chân 8 | DRAIN — Drain connection |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC094N06LS5ATMA1 phù hợp cho 7 Áp dụngs: 48 V Telecom Synchronous Rectification, USB-PD / Quick-Charge Adapter Output Stage, Wireless-Charging Resonant Converter, Industrial 24 V Brushed DC Motor Drive, Server / Datacenter Point-of-Load Buck Converter, Battery-Management Load Switch & Protection, Automotive 12 V ECU Power Switching.
48 V Telecom Synchronous Rectification
The BSC094N06LS5ATMA1 fits 48 V telecom synchronous-rectification stages because its 60 V VDS rating gives >20 % margin above the 48 V nominal bus while its 9.4 mΩ RDS(on) at VGS=10 V directly cuts conduction loss on the secondary side. Used as the low-side MOSFET in a half-bridge driven from a 4.5 V logic-level PWM controller, the part's low Qg (OptiMOS 5 FOM) supports switching frequencies above 300 kHz, enabling smaller magnetics. Compared with a Schottky rectifier the BSC094N06LS5ATMA1 typically reduces rectifier loss by 50–70 % in 48 V isolated bus converters.
Được đề xuất
USB-PD / Quick-Charge Adapter Output Stage
In USB-Power-Delivery and Qualcomm Quick-Charge adapters, the BSC094N06LS5ATMA1 serves as the synchronous-rectifier MOSFET on the secondary side of the flyback. Its 4.5 V logic-level VGS drive allows direct gate control from common secondary-side SR controllers without a charge pump, and the 9.4 mΩ RDS(on) keeps rectifier conduction loss below 0.5 W at 5 A/20 V output. The SuperSO8 5x6 footprint provides ~1 °C/W RthJC, enabling adapter designs that meet 90+ % efficiency at 65 W output without external heatsinking.
Được đề xuất
Wireless-Charging Resonant Converter
The BSC094N06LS5ATMA1 is a strong fit for wireless-charging resonant half-bridge and full-bridge converters thanks to its low Qrr body-diode behavior and 4.5 V VGS logic-level drive. The OptiMOS 5 process minimizes reverse-recovery charge so dead-time can be shortened to <50 ns, reducing body-diode conduction loss in 100–200 kHz Qi-class transmitters. Its 60 V VDS provides comfortable margin above the 19 V input rail typical of USB-PD-powered wireless-charging bases, and the SuperSO8 5x6 footprint supports top-side cooling.
Được đề xuất
Industrial 24 V Brushed DC Motor Drive
The BSC094N06LS5ATMA1 functions as the low-side switch in 24 V brushed-DC motor H-bridges for industrial automation. Its 60 V VDS gives a 2.5× safety margin over the 24 V bus including back-EMF spikes during PWM switching, and 9.4 mΩ RDS(on) keeps I²R loss low at the 5–10 A currents typical of small stepper or gearmotor loads. Logic-level 4.5 V VGS drive allows direct MCU GPIO control with a small gate resistor, simplifying the BOM. The SuperSO8 5x6 footprint is thermally adequate for 2–3 A continuous without a heatsink on 2 oz copper.
Được đề xuất
Server / Datacenter Point-of-Load Buck Converter
The BSC094N06LS5ATMA1 can be used as the synchronous-rectifier (low-side) MOSFET in 12 V-input point-of-load buck converters that feed server CPUs and DDR memory rails at 0.8–3.3 V. Its low FOM (RDS(on) × Qg) cuts switching loss at 500 kHz–1 MHz switching frequencies typical of POL designs, and the SuperSO8 5x6 footprint supports the small PCB area required in dense VRM arrays. 60 V VDS easily accommodates 12 V rails with margin for transient spikes during load steps.
Được đề xuất
Battery-Management Load Switch & Protection
The BSC094N06LS5ATMA1 is appropriate as a 12 V battery-pack load-disconnect switch in cordless power tools, e-bikes, and small UPS systems. Its 60 V VDS gives comfortable margin on 12 V Li-ion packs, and 9.4 mΩ RDS(on) limits continuous conduction loss to <1 W at 10 A discharge. Logic-level 4.5 V VGS drive allows direct BMS-MCU gate control, and the low-leakage OptiMOS 5 process preserves battery standby life. A simple RC snubber across drain-source protects against inductive kick from the load.
Được đề xuất
Automotive 12 V ECU Power Switching
The BSC094N06LS5ATMA1 suits automotive 12 V ECU power switching where the 60 V VDS rating handles load-dump transients up to ~35 V per ISO 7637-2, and the 9.4 mΩ RDS(on) limits I²R loss in always-on power-rail gating. While not itself AEC-Q100 qualified, it is widely used in non-safety automotive subsystems such as infotainment and lighting drivers. The SuperSO8 5x6 footprint supports top-cooled PCB layouts with thermal vias to inner copper planes.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC094N06LS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC0901NSATMA1 | BSC0906NSATMA1 | IAUCN04S7N012ATMA1 | IPD060N03LGATMA1 | BSD235CH6327XTSA1 | IRF7832TRPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | SO-8 (same pinout family) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 60 V | 60 V | 60 V | 40 V (-33%) | 30 V (-50%) | 20 V (-67%, P-ch) | 30 V (-50%) |
| RDS(on) max @10V | 9.4 mΩ | ~9 mΩ | ~9 mΩ | ~1.2 mΩ | ~6 mΩ | ~45 mΩ | ~4 mΩ |
| Technology | OptiMOS 5 logic-level | OptiMOS 5 logic-level | OptiMOS 5 logic-level | OptiMOS 7 / similar advanced | OptiMOS G3 | OptiMOS P-channel | HEXFET (older planar) |
| Logic-level VGS drive | Yes (4.5 V) | Yes (4.5 V) | Yes (4.5 V) | Yes | Yes | Yes | Yes (4.5 V) |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel | P-channel (complementary) | N-channel |
Bảo phân biệt quan trọng
- Logic-level 4.5 V VGS drive enables direct MCU GPIO control without charge pump (vsStandard Vth (10 V) OptiMOS 5 N-channel MOSFETs)
- 60 V VDS gives >20 % safety margin above 48 V telecom bus (vsIAUCN04S7N012ATMA1 (40 V) and IPD060N03LGATMA1 (30 V))
- OptiMOS 5 platform delivers best-in-class FOM (RDS(on) × Qg) (vsIRF7832TRPBF (older HEXFET process))
- SuperSO8 5x6 (PG-TDSON-8-6) package provides ~1 °C/W RthJC (vsLarger D2PAK / TO-252 packages)
Ghi chú thiết kế
Estimated: At VDS=48 V, ID=5 A, and 50 % duty cycle the BSC094N06LS5ATMA1 dissipates ~0.235 W per switch. The PG-TDSON-8-6 (SuperSO8 5x6) package has RthJC ~1.0 °C/W max, so junction temperature rises ~0.24 °C above case — well within the 150 °C limit. Above ~10 A continuous on a 2 oz FR-4 PCB without a heatsink, RthJA dominates (typically 50–70 °C/W on 1 sq-in copper) and thermal runaway becomes a risk; expand copper area or add thermal vias to inner planes.
Place the gate driver within 5 mm of pin 4 (GATE) and use a 10–47 Ω gate resistor to suppress ringing caused by gate-source and drain-source parasitic inductances. Keep the high-current drain loop (drain pin -> transformer/inductor -> return source) as small as possible — under 10 mm total loop length — to minimize VDS overshoot during turn-off. A 1 nF–10 nF snubber or TVS across drain-source is recommended when switching inductive loads above 30 V.
The SuperSO8 5x6 exposed pad must be soldered to a copper pour that covers at least the drain-pad area; stitch the pour to inner-layer ground with an array of 0.3 mm thermal vias on a 1 mm pitch to drop RthJA by 30–50 %. Keep the gate-trace width ≥0.3 mm and avoid running the gate trace parallel to the drain trace — capacitive coupling from drain to gate can cause Miller-induced turn-on and catastrophic shoot-through.
Estimated: Despite the 60 V VDS rating, peak VDS transients during hard-switching of a 48 V rail can reach 70–80 V without snubbing; always measure the worst-case VDS waveform on a prototype and add an RC snubber or TVS clamp if overshoot exceeds 80 % of 60 V. Do not assume the 4.5 V VGS rating provides 4.5 V enhancement at high drain current — consult the RDS(on) curve at your actual VGS to ensure adequate margin.
OptiMOS 5 supports fast switching edges (dV/dt > 50 V/ns) which can radiate EMI through the drain-source loop. Add a small ferrite bead in series with the gate (just before the gate resistor) to slow the turn-on edge by 5–10 ns without significantly increasing switching loss. Place an RC snubber (1–10 Ω + 100 pF–1 nF) across the MOSFET to damp high-frequency ringing and reduce conducted EMI on the input bus.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified — choose IAUC100N10S5N040ATMA1 or other AEC-Q100 Infineon parts for automotive safety applications. Halogen-free status not explicitly stated in provided web data — set to unknown per Data Authenticity Rules.
