IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB025N10N3GATMA1 ✓ Hoạt độngIPB025N10N3GATMA1 Tóm tắt
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type epitaxial region to form a conducting channel between source and drain. Within the power-management taxonomy, MOSFETs sit under transistors -> discrete semiconductors, and the OptiMOS 3 family from Infineon represents a third-generation trench-FET platform optimised for both RDS(on) and figure-of-merit (FOM). Compared with the prior generation, the OptiMOS 3 IPB025N10N3G delivers roughly a 30% reduction in both RDS(on) and FOM, which translates directly into lower conduction and switching losses.
Key features include a 2.5 mΩ typical RDS(on) at 10V VGS, a 3.5V gate-threshold voltage, an input capacitance of 2.58 nF, and a 100V drain-source breakdown that comfortably covers 48V telecom rails, 60V eMobility busbars, and industrial DC bus voltages up to 80V. The D2PAK-7 footprint provides a large metal tab that doubles as both pin 7 (drain) and a low-thermal-resistance path, enabling sustained high-current operation with proper PCB copper area.
The OptiMOS 3 trench architecture combines a narrow, heavily-doped cell pitch with a low-resistance source metallisation to minimise both conduction losses (low RDS(on)) and switching losses (low Qg, low Qgd). This dual-loss reduction is what gives the IPB025N10N3G its strong position in high-frequency SMPS, where every milliohm of RDS(on) saved converts into measurable efficiency gains at full load.
Typical applications include synchronous rectification in 48V-to-12V point-of-load converters, high-current OR-ing and hot-swap controllers in telecom rectifiers, motor-drive half-bridges for e-bike and small EV traction stages, Class-D audio amplifier output stages, and industrial switched-mode power supplies where high efficiency at partial loads is critical.
When designing with this part, size the gate-drive voltage to 10V (logic-level FPGAs/MCUs will need a gate driver) and minimise the source-lead inductance to prevent unintended turn-on from dv/dt. Use a Kelvin-source connection where possible to keep the gate-drive loop short and clean.
This page synthesises distributor pricing, drop-in alternatives from the same Infineon OptiMOS family and competitors, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPB025N10N3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPB025N10N3GATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID) at Tc.
IPB027N10N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB039N10N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB020NE7N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB107N20N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTPF125N10G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiRA80DP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB025N10N3GATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A |
| Power Dissipation (PD) at Tc | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V |
| Input Capacitance (Ciss) | 2.58 nF |
| Hộp | PG-TO263-7 (D2PAK-7) 6+Tab |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET |
| Cấp MSL | 1 (unlimited) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
Cấu hình chân IPB025N10N3GATMA1
| Chân 1 | Gate — Gate terminal - connect to gate driver output |
| Chân 2 | Drain — Drain terminal (also connected to tab) |
| Chân 3 | Source — Source terminal |
| Chân 4 | Kelvin Source — Kelvin-source connection for clean gate drive |
| Chân 5 | Source — Source terminal (parallel pins for low inductance) |
| Chân 6 | Source — Source terminal (parallel pins for low inductance) |
| Chân 7 | Drain (Tab) — Drain terminal exposed pad/tab - main thermal path |
Khu vực hoạt động an toàn (Tc=25C)
Ứng dụng tiêu biểu
IPB025N10N3GATMA1 phù hợp cho 6 Áp dụngs: 48V Synchronous Rectification in Isolated SMPS, High-Current OR-ing and Hot-Swap in Telecom Rectifiers, Motor-Drive Half-Bridge for E-Bike and Small EV Traction, Class-D Audio Amplifier Output Stage, Industrial SMPS and Welding Inverter Switching, USB-PD and High-Current Buck-Boost Charging.
48V Synchronous Rectification in Isolated SMPS
The IPB025N10N3GATMA1 fits the secondary-side synchronous-FET position in 48V-to-12V isolated DC-DC converters used in telecom rectifiers and server power supplies. Its 2.5 mΩ typical RDS(on) at VGS=10V and 100V breakdown provide ample voltage headroom for the reflected primary-side voltage spike, while the D2PAK-7 tab delivers low thermal resistance for sustained high-current operation at 50A-80A continuous. Placed across the secondary winding of a forward or full-bridge topology, it replaces Schottky diodes and recovers 1-3% system efficiency. The OptiMOS 3 trench architecture keeps gate charge low enough to allow 200 kHz-300 kHz switching without excessive driver losses.
Được đề xuất
High-Current OR-ing and Hot-Swap in Telecom Rectifiers
In -48V telecom rectifier shelves where two redundant supplies feed a common bus, the IPB025N10N3GATMA1 serves as a high-current OR-ing FET. Its 100V VDS comfortably handles the maximum -48V bus plus transients, while the 2.5 mΩ RDS(on) minimises steady-state power dissipation when carrying 100A-180A of continuous current. The D2PAK-7 package provides excellent thermal coupling to the chassis heatsink. A controller such as the LM5069 or hot-swap ASIC monitors drain-to-source voltage drop and turns the FET off if reverse current is detected; the IPB025N10N3G's fast switching and low total gate charge support clean hot-swap turn-on without ringing or false-trigger events.
Được đề xuất
Motor-Drive Half-Bridge for E-Bike and Small EV Traction
The IPB025N10N3GATMA1 is an excellent low-side or high-side switch in the half-bridge stages of e-bike and small electric-vehicle traction motor drives. The 100V breakdown is well-matched to 36V and 48V battery packs (with appropriate transient derating), and the 180A continuous rating supports peak motor currents of 100A-150A in 500W-1500W traction systems. Combined with a gate driver such as the IRS2302STRPBF or 2ED2108S06FXUMA1, the OptiMOS 3 device delivers clean PWM at 20 kHz-50 kHz with low switching losses. The D2PAK-7 package can be mounted to a heatsink or aluminium chassis plate for sustained thermal performance under stall-current conditions.
Được đề xuất
Class-D Audio Amplifier Output Stage
In high-power Class-D audio amplifiers, the IPB025N10N3GATMA1 forms the output half-bridge switch delivering hundreds of watts into 4Ω-8Ω loudspeaker loads. The OptiMOS 3 device's low RDS(on) minimises conduction loss at high output current, while its 100V breakdown easily handles the supply rails of 36V-50V used in 200W-500W amplifier designs. The trench-FET structure provides clean switching edges that reduce EMI in the audio band, and the D2PAK-7 package enables compact PCB layouts with sufficient thermal mass for sustained musical-power output without thermal runaway. A dedicated Class-D modulator IC drives the gate through a bootstrap driver such as the IRS2052MTRPBF.
Được đề xuất
Industrial SMPS and Welding Inverter Switching
In industrial switched-mode power supplies and small welding inverters, the IPB025N10N3GATMA1 functions as the primary-side switching FET in hard-switched or resonant topologies. The 100V breakdown rating and 180A current capability suit 36V-72V industrial bus inputs delivering 1 kW-3 kW of output power. The OptiMOS 3 family's low gate charge and figure-of-merit support high-frequency operation (up to 300 kHz) in LLC and phase-shifted full-bridge designs, where every 100 kHz of switching frequency halves the size of the magnetic components. The D2PAK-7 package's low thermal resistance allows direct mounting to the chassis heatsink for sealed industrial enclosures.
Được đề xuất
USB-PD and High-Current Buck-Boost Charging
The IPB025N10N3GATMA1 is used as the high-side and low-side switch in high-current buck-boost converters for USB-Power-Delivery chargers and 48V-to-20V laptop adapters. With 100V breakdown, it tolerates input transients common in automotive 12V/24V environments when the adapter is plugged into a vehicle outlet. The 2.5 mΩ RDS(on) and 180A continuous rating support 100W-240W Power Delivery profiles without thermal throttling. Paired with a digital controller such as the XDPL8219XUMA1 and a current-sense amplifier, the OptiMOS 3 device enables compact, high-density designs that meet the stringent efficiency requirements of USB-PD 3.1 Extended Power Range (EPR).
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPB025N10N3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPB027N10N3GATMA1 | IPB039N10N3GATMA1 | IPB020NE7N3GATMA1 | NTPF125N10G | SiRA80DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | D2PAK-7 (TO-263-7) - same | D2PAK-7 (TO-263-7) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 75 V | 100 V | 100 V |
| Continuous Drain Current (ID at Tc) | 180 A | 180 A | 180 A | 180 A | 120 A | 80 A |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | Trench MOSFET | TrenchFET Gen V |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 100V D2PAK-7 OptiMOS 3 family (vsIPB027N10N3GATMA1)
- Highest continuous current rating in the 2.5 mΩ class (vsNTPF125N10G (onsemi))
- OptiMOS 3 figure-of-merit (FOM) advantage (vsSiRA80DP (Vishay TrenchFET))
Ghi chú thiết kế
At full 180A continuous current into a 25C case, the IPB025N10N3GATMA1 dissipates approximately 81W (180A x 2.5 mΩ x 2 for hard-switched half-cycle, or x 1 for fully on). The PG-TO263-7 package has a junction-to-case thermal resistance of approximately 0.5 C/W, which yields a 40C junction temperature rise above case - easily manageable. However, junction-to-ambient is much higher (typically 50 C/W with minimum 1 oz copper on a 4-layer PCB), so for 100W-class dissipation, a heatsink or substantial PCB copper area (at least 10 square cm top-side pour connected to the tab) is essential. Estimated values: Tc=25C, PCB copper=10 sq cm, theta_JA=50 C/W - junction temperature rise ~125C at 100W dissipation.
The D2PAK-7 Kelvin-source pin (pin 4) must be used as the gate-drive return to avoid source-lead inductance injecting the gate voltage during high di/dt transitions. Layout recommendation: connect the gate-driver output directly between pins 1 (gate) and 4 (Kelvin source), with the high-current source current flowing through pins 3/5/6 instead. This eliminates the common-source inductance problem that otherwise limits switching speed and can cause dv/dt-induced turn-on in half-bridge configurations.
Solder the tab to a copper pad of at least 1 square cm connected to multiple thermal vias (12-16 vias minimum, 0.3 mm drill) to inner-layer copper heat-spreaders. Avoid thermal vias under the gate-driver IC to keep that side cool. For >5W sustained dissipation, place 4-6 mm of additional top-side copper from each side of the tab to act as a spreader, and consider an aluminium clip-on heatsink for >50W applications. The recommended solder paste stencil is 0.15-0.20 mm thickness to ensure proper tab fillet formation.
Do not operate the IPB025N10N3GATMA1 with VGS below 10V if full RDS(on) is needed - at 4.5V VGS the on-resistance can be 2-3x higher, defeating the efficiency advantage. Always include a gate-source resistor (10kΩ-100kΩ) to keep the FET off during controller start-up. In half-bridge configurations, add a small gate-source anti-shootthrough dead-time of 50-100 ns. Do not exceed the avalanche energy rating during turn-off; clamp with an RCD snubber if inductive loads are switched.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Halogen-free per MSL-1 rating. Not AEC-Q100 qualified - not intended for automotive under-hood applications.
