IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB025N10N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.22 | $6.22 |
| 10 | $5.78 | $57.80 |
| 100 | $4.96 | $496.00 |
| 500 | $4.32 | $2,160.00 |
| 1,000 | $3.74 | $3,740.00 |
Drop-in alternatives for IPB025N10N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB027N10N3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB039N10N3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB020NE7N3GATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →IPB107N20N3GATMA1
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →NTPF125N10G
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA80DP
✅ Drop-In📋 Reference alternative (not in catalog)
IPB025N10N3GATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A |
| Power Dissipation (PD) at Tc | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V |
| Input Capacitance (Ciss) | 2.58 nF |
| Package | PG-TO263-7 (D2PAK-7) 6+Tab |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
IPB025N10N3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate terminal - connect to gate driver output |
| Pin 2 | Drain — Drain terminal (also connected to tab) |
| Pin 3 | Source — Source terminal |
| Pin 4 | Kelvin Source — Kelvin-source connection for clean gate drive |
| Pin 5 | Source — Source terminal (parallel pins for low inductance) |
| Pin 6 | Source — Source terminal (parallel pins for low inductance) |
| Pin 7 | Drain (Tab) — Drain terminal exposed pad/tab - main thermal path |
Safe Operating Area (Tc=25C)
Typical Applications
IPB025N10N3GATMA1 is suitable for 6 applications: 48V Synchronous Rectification in Isolated SMPS, High-Current OR-ing and Hot-Swap in Telecom Rectifiers, Motor-Drive Half-Bridge for E-Bike and Small EV Traction, Class-D Audio Amplifier Output Stage, Industrial SMPS and Welding Inverter Switching, USB-PD and High-Current Buck-Boost Charging.
48V Synchronous Rectification in Isolated SMPS
The IPB025N10N3GATMA1 fits the secondary-side synchronous-FET position in 48V-to-12V isolated DC-DC converters used in telecom rectifiers and server power supplies. Its 2.5 mΩ typical RDS(on) at VGS=10V and 100V breakdown provide ample voltage headroom for the reflected primary-side voltage spike, while the D2PAK-7 tab delivers low thermal resistance for sustained high-current operation at 50A-80A continuous. Placed across the secondary winding of a forward or full-bridge topology, it replaces Schottky diodes and recovers 1-3% system efficiency. The OptiMOS 3 trench architecture keeps gate charge low enough to allow 200 kHz-300 kHz switching without excessive driver losses.
Recommended
High-Current OR-ing and Hot-Swap in Telecom Rectifiers
In -48V telecom rectifier shelves where two redundant supplies feed a common bus, the IPB025N10N3GATMA1 serves as a high-current OR-ing FET. Its 100V VDS comfortably handles the maximum -48V bus plus transients, while the 2.5 mΩ RDS(on) minimises steady-state power dissipation when carrying 100A-180A of continuous current. The D2PAK-7 package provides excellent thermal coupling to the chassis heatsink. A controller such as the LM5069 or hot-swap ASIC monitors drain-to-source voltage drop and turns the FET off if reverse current is detected; the IPB025N10N3G's fast switching and low total gate charge support clean hot-swap turn-on without ringing or false-trigger events.
Recommended
Motor-Drive Half-Bridge for E-Bike and Small EV Traction
The IPB025N10N3GATMA1 is an excellent low-side or high-side switch in the half-bridge stages of e-bike and small electric-vehicle traction motor drives. The 100V breakdown is well-matched to 36V and 48V battery packs (with appropriate transient derating), and the 180A continuous rating supports peak motor currents of 100A-150A in 500W-1500W traction systems. Combined with a gate driver such as the IRS2302STRPBF or 2ED2108S06FXUMA1, the OptiMOS 3 device delivers clean PWM at 20 kHz-50 kHz with low switching losses. The D2PAK-7 package can be mounted to a heatsink or aluminium chassis plate for sustained thermal performance under stall-current conditions.
Recommended
Class-D Audio Amplifier Output Stage
In high-power Class-D audio amplifiers, the IPB025N10N3GATMA1 forms the output half-bridge switch delivering hundreds of watts into 4Ω-8Ω loudspeaker loads. The OptiMOS 3 device's low RDS(on) minimises conduction loss at high output current, while its 100V breakdown easily handles the supply rails of 36V-50V used in 200W-500W amplifier designs. The trench-FET structure provides clean switching edges that reduce EMI in the audio band, and the D2PAK-7 package enables compact PCB layouts with sufficient thermal mass for sustained musical-power output without thermal runaway. A dedicated Class-D modulator IC drives the gate through a bootstrap driver such as the IRS2052MTRPBF.
Recommended
Industrial SMPS and Welding Inverter Switching
In industrial switched-mode power supplies and small welding inverters, the IPB025N10N3GATMA1 functions as the primary-side switching FET in hard-switched or resonant topologies. The 100V breakdown rating and 180A current capability suit 36V-72V industrial bus inputs delivering 1 kW-3 kW of output power. The OptiMOS 3 family's low gate charge and figure-of-merit support high-frequency operation (up to 300 kHz) in LLC and phase-shifted full-bridge designs, where every 100 kHz of switching frequency halves the size of the magnetic components. The D2PAK-7 package's low thermal resistance allows direct mounting to the chassis heatsink for sealed industrial enclosures.
Recommended
USB-PD and High-Current Buck-Boost Charging
The IPB025N10N3GATMA1 is used as the high-side and low-side switch in high-current buck-boost converters for USB-Power-Delivery chargers and 48V-to-20V laptop adapters. With 100V breakdown, it tolerates input transients common in automotive 12V/24V environments when the adapter is plugged into a vehicle outlet. The 2.5 mΩ RDS(on) and 180A continuous rating support 100W-240W Power Delivery profiles without thermal throttling. Paired with a digital controller such as the XDPL8219XUMA1 and a current-sense amplifier, the OptiMOS 3 device enables compact, high-density designs that meet the stringent efficiency requirements of USB-PD 3.1 Extended Power Range (EPR).
Recommended
Recommended Products Summary
Engineering reference data for IPB025N10N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB027N10N3GATMA1 | IPB039N10N3GATMA1 | IPB020NE7N3GATMA1 | NTPF125N10G | SiRA80DP |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | D2PAK-7 (TO-263-7) - same | D2PAK-7 (TO-263-7) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 75 V | 100 V | 100 V |
| Continuous Drain Current (ID at Tc) | 180 A | 180 A | 180 A | 180 A | 120 A | 80 A |
| RDS(on) Typical at 10V VGS | 2.5 mΩ | 2.7 mΩ | 3.9 mΩ | 2.0 mΩ | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate-Source Threshold (VGS(th)) | 3.5 V | 3.5 V | 3.5 V | 3.5 V | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD at Tc) | 300 W | 300 W | 300 W | 300 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET | Trench MOSFET | TrenchFET Gen V |
Key Differentiators
- Lowest RDS(on) in 100V D2PAK-7 OptiMOS 3 family (vs IPB027N10N3GATMA1)
- Highest continuous current rating in the 2.5 mΩ class (vs NTPF125N10G (onsemi))
- OptiMOS 3 figure-of-merit (FOM) advantage (vs SiRA80DP (Vishay TrenchFET))
Design Notes
At full 180A continuous current into a 25C case, the IPB025N10N3GATMA1 dissipates approximately 81W (180A x 2.5 mΩ x 2 for hard-switched half-cycle, or x 1 for fully on). The PG-TO263-7 package has a junction-to-case thermal resistance of approximately 0.5 C/W, which yields a 40C junction temperature rise above case - easily manageable. However, junction-to-ambient is much higher (typically 50 C/W with minimum 1 oz copper on a 4-layer PCB), so for 100W-class dissipation, a heatsink or substantial PCB copper area (at least 10 square cm top-side pour connected to the tab) is essential. Estimated values: Tc=25C, PCB copper=10 sq cm, theta_JA=50 C/W - junction temperature rise ~125C at 100W dissipation.
The D2PAK-7 Kelvin-source pin (pin 4) must be used as the gate-drive return to avoid source-lead inductance injecting the gate voltage during high di/dt transitions. Layout recommendation: connect the gate-driver output directly between pins 1 (gate) and 4 (Kelvin source), with the high-current source current flowing through pins 3/5/6 instead. This eliminates the common-source inductance problem that otherwise limits switching speed and can cause dv/dt-induced turn-on in half-bridge configurations.
Solder the tab to a copper pad of at least 1 square cm connected to multiple thermal vias (12-16 vias minimum, 0.3 mm drill) to inner-layer copper heat-spreaders. Avoid thermal vias under the gate-driver IC to keep that side cool. For >5W sustained dissipation, place 4-6 mm of additional top-side copper from each side of the tab to act as a spreader, and consider an aluminium clip-on heatsink for >50W applications. The recommended solder paste stencil is 0.15-0.20 mm thickness to ensure proper tab fillet formation.
Do not operate the IPB025N10N3GATMA1 with VGS below 10V if full RDS(on) is needed - at 4.5V VGS the on-resistance can be 2-3x higher, defeating the efficiency advantage. Always include a gate-source resistor (10kΩ-100kΩ) to keep the FET off during controller start-up. In half-bridge configurations, add a small gate-source anti-shootthrough dead-time of 50-100 ns. Do not exceed the avalanche energy rating during turn-off; clamp with an RCD snubber if inductive loads are switched.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per MSL-1 rating. Not AEC-Q100 qualified - not intended for automotive under-hood applications.
