BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC028N06NSTATMA1 ✓ Hoạt độngBSC028N06NSTATMA1 Tóm tắt
What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled switch used to switch or amplify signals in electronic circuits. An N-channel MOSFET conducts current between drain and source when a positive gate-source voltage exceeds Vth; for power conversion, the key figure of merit is RDS(on) × Qg (lower = lower conduction AND switching loss). Infineon's OptiMOS 5 is a 60 V-300 V platform that reduces both figures by ~30-50% versus prior OptiMOS generations, sitting in the broader hierarchy: power MOSFET -> discrete semiconductor -> power management.
Key specifications include a 60 V drain-source breakdown voltage, 2.8 mΩ maximum RDS(on) at VGS=10 V, gate threshold voltage typically 2.5-3.5 V, total gate charge of approximately 37 nC, and an operating junction temperature range of -55°C to +175°C. The PG-TDSON-8-7 (5x6 mm SuperSO8) package uses an exposed drain pad for direct PCB heat-sinking with a thermal resistance that supports 100 W when mounted on a 1 in² copper pad.
The OptiMOS 5 cell architecture uses a shielded-gate trench design with a low-resistance substrate, achieving the 2.8 mΩ on-state figure in a footprint less than 30 mm². This combination of low RDS(on), moderate gate charge, and small package makes the part suitable for high-frequency synchronous rectification in switch-mode power supplies (SMPS) where both conduction and switching loss matter.
Typical applications include synchronous rectification in server, desktop and tablet charger SMPS, DC-DC converter high-side and low-side switches, motor drive H-bridges (12-48 V systems), battery management OR-ing and protection, and eMobility / 48 V mild-hybrid power distribution. The 60 V rating provides comfortable headroom for 24 V industrial and 36-48 V eMobility buses.
When designing with this MOSFET, prioritize minimizing source-inductance by short, wide source/return paths on the PCB and by using the source-pad down configuration. Drive the gate with a 4-10 V gate-drive voltage; the part's 2.5-3.5 V threshold means standard 5 V logic-level drives work for low-frequency switching, but 10 V is recommended for full RDS(on) and lowest loss.
This page synthesizes distributor pricing, parametric drop-in alternatives, application notes, and PCB-layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluating the BSC028N06NSTATMA1.
Bộ thay thế dễ dàng lắp đặt cho BSC028N06NSTATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC028N06NSTATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
BSC034N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC016N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC040N06NS
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC097N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBGQA1602
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC028N06NSTATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Part Number Base | BSC028N06NS |
| Technology | MOSFET N-Channel (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V |
| Total Gate Charge Qg | 37 nC @ VGS=10V |
| Output Capacitance Coss | 825 pF |
| Reverse Transfer Capacitance Crss | 56 pF |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 100 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Cấp MSL | 1 |
Cấu hình chân BSC028N06NSTATMA1
| Chân 1 | Source — Source connection (Kelvin-sensed) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain (connected to exposed pad) |
| Chân 6 | Drain — Drain (connected to exposed pad) |
| Chân 7 | Drain — Drain (connected to exposed pad) |
| Chân 8 | Drain — Drain (connected to exposed pad) |
Khu vực hoạt động an toàn (DC, TC=25C)
Ứng dụng tiêu biểu
BSC028N06NSTATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in SMPS, 48V Mild-Hybrid eMobility Power Distribution, Industrial 24V Buck / Boost DC-DC Converters, Battery Management / OR-ing Protection, Motor Drive H-Bridge (12-48V), USB-PD / High-Current Charger Output Stage.
Synchronous Rectification in SMPS
The BSC028N06NSTATMA1 is widely used as the low-side synchronous rectifier in switched-mode power supplies for servers, desktops, and tablet chargers. The 2.8 mΩ RDS(on) at 10 V VGS keeps conduction losses below 1 W at 20 A load, while the 37 nC total gate charge enables switching frequencies up to 500 kHz. The PG-TDSON-8-7 exposed-drain pad provides thermal relief on standard 1-2 oz copper PCB layouts. Designers should pair the part with a high-side BSC016N06NSATMA1 for the best efficiency in 48 V-to-12 V buck stages serving AI server rails.
Được đề xuất
48V Mild-Hybrid eMobility Power Distribution
The 60 V VDS rating of the BSC028N06NSTATMA1 makes it ideal for 48 V mild-hybrid automotive power buses, where transients can spike to 60 V during load-dump events. The 2.8 mΩ RDS(on) supports continuous currents of 24 A on PCB-mounted designs typical of eMobility DC-DC converters. The OptiMOS 5 cell architecture tolerates the high junction temperatures (up to +175°C) seen in under-hood environments. For AEC-Q101-qualified automotive variants, engineers should verify the part suffix against Infineon's automotive OptiMOS 5 datasheet.
Được đề xuất
Industrial 24V Buck / Boost DC-DC Converters
The BSC028N06NSTATMA1 fits 24 V industrial bus buck and boost converters where the 60 V VDS provides 2.5x safety margin over nominal rail voltage. The 2.8 mΩ RDS(on) supports 10-20 A continuous loads in industrial PLC, motor drive, and factory-automation systems. The PG-TDSON-8-7 5x6 mm footprint enables compact designs on 4-layer FR-4 with standard 1 oz copper. Pairing this part with the EiceDRIVER 2EDN7524GXTMA1 gate driver gives sub-30 ns propagation delays for high-frequency operation.
Được đề xuất
Battery Management / OR-ing Protection
In battery management systems (BMS) and OR-ing protection circuits, the BSC028N06NSTATMA1 serves as the low-loss pass element. The 60 V VDS handles multi-cell lithium battery stacks up to 13S (54.6 V fully charged). The 2.8 mΩ RDS(on) minimizes voltage drop across the protection MOSFET, extending battery run-time. The -55°C to +175°C junction temperature range supports outdoor energy-storage and e-bike applications. Source pins 1-3 should be Kelvin-connected to the controller's current-sense amplifier for accurate coulomb counting.
Được đề xuất
Motor Drive H-Bridge (12-48V)
The BSC028N06NSTATMA1 is well-suited as the low-side and high-side switches in H-bridge motor drives for 12 V, 24 V, and 48 V brushless DC motors. The 2.8 mΩ RDS(on) keeps I²R losses below 700 mW per FET at 10 A, reducing heatsinking requirements. The 60 V VDS handles back-EMF spikes typical of motor commutation. The PG-TDSON-8-7 footprint allows compact integration with the IRS2181STRPBF or IRS2104STRPBF half-bridge gate driver on the same PCB layer.
Được đề xuất
USB-PD / High-Current Charger Output Stage
In 100 W+ USB-PD chargers and laptop adapters, the BSC028N06NSTATMA1 serves as the synchronous rectifier on the secondary side of the flyback or as the low-side switch in active-clamp forward topologies. The 2.8 mΩ RDS(on) minimizes conduction loss at 5 A / 20 V output, while the small 5x6 mm footprint keeps the BOM dense. The OptiMOS 5 platform's low Qrr (reverse-recovery charge) reduces dead-time loss in zero-voltage-switching (ZVS) topologies preferred for ultra-thin laptop adapters.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC028N06NSTATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC034N06NSATMA1 | BSC016N06NSATMA1 | BSC040N06NS | BSC097N06NSATMA1 | VBGQA1602 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | DFN8 (5x6) - same footprint |
| Drain-Source Voltage VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | Shielded-gate trench (VBsemi) |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 60 V OptiMOS 5 family at 2.8 mΩ (vsBSC034N06NSATMA1)
- Significantly lower conduction loss than cost-optimized variant (vsBSC097N06NSATMA1)
- Cross-brand pin-compatible supply-chain alternative (vsVBGQA1602 (VBsemi))
Ghi chú thiết kế
Estimated: at 24 A continuous drain current with TA=25°C and the PG-TDSON-8-7 mounted on the minimum recommended 1 in² (645 mm²) of 1 oz copper, junction temperature rise is approximately ΔT = P × θJA = 24² × 0.0028 × 50 = 81°C, putting TJ at ~106°C. For continuous 24 A operation, increase copper area to ≥2 in² or add airflow. The 100 W rating applies only with case-temperature-controlled mounting (TC=25°C), which is not achievable in most PCB designs.
Layout is critical for low-loss switching. Use a 4-layer PCB with a dedicated ground plane directly under the PG-TDSON-8-7 exposed pad. Connect source pins 1-3 with a Kelvin return path to the gate-driver ground - this decouples the high-current source path from the gate-drive loop and prevents gate-oscillation. The exposed drain pad (pins 5-8) must have at least 8 thermal vias (0.3 mm drill) to the bottom copper plane to achieve rated thermal performance.
Do not drive the gate with voltages above the absolute maximum VGS of ±20 V, even transiently. For 12 V gate drives, add a 10 kΩ gate-source resistor to ensure the part stays off if the gate driver loses power. The PG-TDSON-8-7 footprint is NOT pin-compatible with the smaller PG-TSDSON-8 (3x3 mm) - verify mechanical drawings before substituting. Source pins 1, 2, and 3 must all be soldered; missing source pin bonds will exceed current rating.
Minimize the high-side gate-drive loop area: keep the bootstrap capacitor within 2 mm of the high-side driver's BST and SW pins, and the gate drive trace to the MOSFET gate ≤10 mm total length. For synchronous rectification in totem-pole or half-bridge topologies, route the low-side gate trace on the opposite PCB layer from the high-current switching node to minimize dv/dt-induced turn-on of the low-side FET (Miller effect).
Thông tin tuân thủ
AEC-Q101 automotive qualification status not confirmed from provided data - check Infineon OptiMOS 5 60 V automotive datasheet. RoHS and REACH compliance per Infineon product page. Halogen-free per JLCPCB and LCSC listing.
