IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
MPN: IPTG025N15NM6ATMA1 ✓ Hoạt độngIPTG025N15NM6ATMA1 Tóm tắt
What is a power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled three-terminal switch used for power conversion. The N-channel variant conducts when a positive gate-source voltage is applied, and the 150 V class sits in a hypernym hierarchy of low-voltage MOSFET (<60 V) -> standard-voltage MOSFET (60-200 V) -> high-voltage MOSFET (>500 V) -> power discrete semiconductor. Within Infineon's portfolio, this part belongs to the OptiMOS 6 family, which is optimized for telecom, server, solar, and e-mobility applications.
Key features include 2.5 mOhm typical on-state resistance (RDS(on)) at 10 V VGS, a low gate charge Qg that lowers switching losses, and a monolithically integrated Schottky-like diode body for reduced reverse-recovery charge. The PG-HSOG-8-1 package delivers a thermal resistance (junction-to-case) suitable for 395 W power dissipation at TC = 25 C, enabling compact SMD designs that previously required D2PAK footprints.
Technical depth: the OptiMOS 6 150 V process uses Infineon's latest trench MOSFET cell architecture with an optimized source-body epitaxy. Compared to OptiMOS 5, this part offers improved figure-of-merit (RDS(on) x Qg) of roughly 30 percent, translating directly into lower conduction and switching losses. The PG-HSOG-8-1 (TOLG) package supports reflow soldering with MSL1 floor life and provides a Kelvin-source connection on pin 4 for gate-drive optimization.
Typical applications include 48 V telecom bus converters, synchronous rectification in telecom rectifiers, solar string inverters, e-bike and low-voltage e-mobility motor drives, hot-swap controllers in server 48 V rails, and industrial SMPS half-bridge stages. The 150 V rating provides sufficient margin for 48 V nominal bus systems with transients up to 100 V.
Design consideration: ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification; driving below 6 V can double on-state losses. The exposed pad must be soldered to a copper area of at least 6 cm squared on the drain tab for the rated 395 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPTG025N15NM6ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPTG025N15NM6ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
IPTG020N15NM6ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPT067N20NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC016N08NM8ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7N024ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUC100N04S6N028ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPTG025N15NM6ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TA=25C | 26 A |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Power Dissipation (PD) at TC=25C | 395 W |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V |
| Hộp | PG-HSOG-8-1 (TOLG) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55 C to +175 C (typical for OptiMOS 6) |
| Trạng thái RoHS | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK |
Cấu hình chân IPTG025N15NM6ATMA1
| Chân 1 | Drain — Drain terminal and thermal pad (exposed pad) |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Kelvin Source — Kelvin source connection for gate drive return |
| Chân 5 | Gate — Gate terminal |
| Chân 6 | Source — Source terminal |
| Chân 7 | Source — Source terminal |
| Chân 8 | Source — Source terminal |
Khu vực hoạt động an toàn (DC) - PG-HSOG-8-1 package, TC=25C
Ứng dụng tiêu biểu
IPTG025N15NM6ATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Bus Converters, Synchronous Rectification in SMPS, Solar String Inverters, E-Bike and Low-Voltage E-Mobility Motor Drives, Server 48 V Hot-Swap Controllers, Industrial SMPS Half-Bridge Stages.
48 V Telecom Bus Converters
The IPTG025N15NM6ATMA1's 150 V VDS rating provides ample margin for 48 V nominal telecom buses with transients up to 100 V. With 2.5 mOhm RDS(on) at VGS=10 V and the PG-HSOG-8-1 footprint, it fits high-density half-bridge and full-bridge converter stages. The 26 A continuous ID supports typical 600-1200 W converter modules. Designers should use the Kelvin-source pin to minimize gate-loop inductance, and gate-drive voltage must reach at least 10 V for the rated RDS(on). Compared to a 100 V MOSFET on the same bus, the 150 V part avoids avalanche stress during hot-swap events.
Được đề xuất
Synchronous Rectification in SMPS
In 48 V to 12 V or 24 V bus converters, the IPTG025N15NM6ATMA1 serves as the synchronous rectifier on the secondary side, replacing Schottky diodes to cut conduction losses. Its 2.5 mOhm RDS(on) and low Qrr body-diode performance yield rectifier efficiency above 98 percent in 1 kW converters. The PG-HSOG-8-1 package's small footprint (30 percent smaller than D2PAK) enables higher power density. Drive the gate with 10 V from a synchronous rectifier controller such as the IR1161 family, with dead-time control to prevent cross-conduction.
Được đề xuất
Solar String Inverters
Solar string inverters operate from 80-150 V open-circuit panels and require MOSFETs that handle both boost and full-bridge topologies. The IPTG025N15NM6ATMA1's 150 V rating covers the MPPT range of typical 60-cell panels, while its 26 A continuous current handles 3-4 kW inverter stages. The OptiMOS 6 technology reduces switching losses by approximately 30 percent versus prior generations, improving inverter CEC efficiency. Use a high-side bootstrap driver and ensure the exposed drain pad has at least 6 cm squared of copper for thermal dissipation under sustained load.
Được đề xuất
E-Bike and Low-Voltage E-Mobility Motor Drives
E-bike controllers operate from 36-48 V battery packs with peak currents up to 30 A, and the IPTG025N15NM6ATMA1 handles these transients within its SOA. The 150 V VDS rating provides safety margin for regenerative braking events where back-EMF can briefly exceed bus voltage. Its PG-HSOG-8-1 footprint fits compact controller enclosures, and the Kelvin-source pin enables the clean gate signals required at 25-50 kHz PWM frequencies. Pair with a 3-phase gate driver such as the IRS21834STRPBF or 6EDL04N02PRXUMA1 for complete motor-drive solutions.
Được đề xuất
Server 48 V Hot-Swap Controllers
In server 48 V intermediate bus architectures, the IPTG025N15NM6ATMA1 functions as the hot-swap switch protecting downstream hardware from inrush transients. Its 264 A pulsed current rating handles the initial capacitor charging surge, while the 150 V VDS accommodates transient spikes during hot-plug events. The 2.5 mOhm RDS(on) keeps steady-state conduction loss minimal across the bus. Integrate with a hot-swap controller such as the ADM1177 or LTC4282 for closed-loop current limiting, and use a dedicated gate driver to control turn-on dV/dt.
Được đề xuất
Industrial SMPS Half-Bridge Stages
Industrial SMPS designs at the 100-150 V bus class use the IPTG025N15NM6ATMA1 as the half-bridge switch pair in isolated DC-DC converters and motor-drive front ends. The 2.5 mOhm RDS(on) and OptiMOS 6 trench architecture minimize both conduction and switching losses at 50-100 kHz operating frequencies. The 26 A continuous ID supports 2-3 kW converter stages when paired with a high-density ferrite transformer. Ensure adequate heatsinking via copper pours or an external heatsink attached to the exposed drain pad, and use a half-bridge driver with built-in dead-time generation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPTG025N15NM6ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPTG020N15NM6ATMA1 | IPT067N20NM6ATMA1 | ISC016N08NM8ATMA1 | IAUCN08S7N024ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOG-8-1 (TOLG) | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same |
| Drain-Source Voltage VDS | 150 V | 150 V | 200 V | 80 V | 80 V | 40 V |
| RDS(on) typ at VGS=10V | 2.5 mOhm | 2.0 mOhm | 6.7 mOhm | 1.6 mOhm | 2.4 mOhm | 1.0 mOhm |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- 30 percent smaller footprint than D2PAK with equivalent thermal performance (vsIRFB7534PBF (D2PAK 60V 160A MOSFET))
- OptiMOS 6 generation provides 30 percent figure-of-merit improvement (vsIAUC100N04S6N028ATMA1 (OptiMOS 5 40V))
- Higher VDS rating than OptiMOS 5 alternatives at the same footprint (vsISC016N08NM8ATMA1 (OptiMOS 5 80V))
Ghi chú thiết kế
Estimated: at ID=20 A continuous and RDS(on)=2.5 mOhm, conduction loss is approximately 1.0 W. At 48 V to 12 V switching at 100 kHz with 50 percent duty, switching losses add approximately 0.5 W. Total 1.5 W dissipation in PG-HSOG-8-1 with a typical theta_JA of 40 C/W produces a 60 C junction rise above ambient, keeping TJ below 125 C in 65 C environments. Use a copper area of at least 6 cm squared on the drain tab as specified in the datasheet test condition.
The PG-HSOG-8-1 (TOLG) package requires careful PCB layout to minimize source inductance. Use the Kelvin-source pin (pin 4) for the gate-driver return path, not the power-source pins. Keep the gate-drive loop area under 10 mm squared by routing the gate trace directly between the driver output and the Kelvin pin. Place a 10 Ohm gate resistor in series to dampen parasitic ringing, and add a 100 nF ceramic bypass capacitor adjacent to the gate-driver supply pin.
Do not drive the gate below 6 V - RDS(on) increases dramatically and the device may operate in linear mode, causing thermal runaway. Do not exceed VGS(max) of 20 V (typical for Infineon OptiMOS 6) - check the datasheet for the exact value. Avoid exceeding VDS=150 V even during transients; use a TVS clamp or snubber on the drain if inductive kick is possible. Finally, do not solder without a proper reflow profile (peak 260 C, MSL1 floor life applies).
For half-bridge layouts using two IPTG025N15NM6ATMA1 parts, minimize the high-side-to-low-side loop inductance by placing the two MOSFETs on the same side of the board with a small commutation loop. Use an inner-layer copper pour for the phase node to reduce radiated EMI. Keep the gate-drive traces perpendicular to the power-loop direction to minimize capacitive coupling. Reference Infineon application note 'PCB Layout for OptiMOS Half-Bridges' for detailed layout guidance.
Thông tin tuân thủ
RoHS compliant and halogen-free per Infineon OptiMOS 6 product family standard. Not AEC-Q100 qualified - for automotive applications refer to Infineon's dedicated OptiMOS automotive-grade parts.
