ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon
MPN: ISC016N08NM8ATMA1 ✓ Hoạt độngISC016N08NM8ATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier device whose conduction is regulated by the gate-source voltage; modern MOSFETs such as OptiMOS 8 use trench-gate field-plate structures to simultaneously minimize on-resistance, gate charge and switching losses. MOSFETs belong to the discrete-semiconductor family and form the switching heart of nearly every DC-DC converter, motor driver and load-management system in power electronics.
Key features include a maximum drain-source voltage of 80 V, continuous drain current of 29 A (Ta), pulsed capability up to 268 A (Tc), and an exceptionally low typical RDS(on) of 1.6 mOhm at 10 V VGS. The OptiMOS 8 cell shrinks gate charge (Qg) and output charge (Qoss), enabling lower switching losses and higher converter efficiency at elevated switching frequencies. The SuperSO8 (PG-TDSON-8) package provides a low thermal-resistance path to the PCB drain pad, allowing up to 263 W (Tc) dissipation with proper copper layout.
Typical applications include synchronous rectification in telecom and server 48 V intermediate-bus converters, point-of-load (POL) modules, DC-DC bricks, motor drive H-bridges, hot-swap and OR-ing controllers, and battery-management protection FETs in 24 V / 48 V industrial and e-mobility systems. The combination of low Qg and low RDS(on) makes this MOSFET well-suited to high-frequency (>500 kHz) half-bridge topologies where switching loss dominates total loss.
When designing with this part, ensure that the gate driver delivers at least 10 V VGS to fully enhance the channel and minimize conduction loss. Optimize PCB copper pour beneath the exposed pad to keep junction temperature below 150 C under worst-case load - 6 cm^2 of 2 oz copper on a 40 x 40 mm FR4 board is the datasheet's recommended thermal evaluation footprint.
This page synthesizes distributor pricing, drop-in OptiMOS 8 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho ISC016N08NM8ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC016N08NM8ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Ta.
ISC016N08NM8
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISC011N06LM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC009N06LM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC110N12NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC058N04NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC016N08NM8ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 8 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS max) | 80 V |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | 29 A |
| Pulsed Drain Current (IDM) at Tc | 268 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C (junction) |
| Hộp | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Kiểu lắp đặt | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) |
| Trạng thái RoHS | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) |
| Cấp MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
Cấu hình chân ISC016N08NM8ATMA1
| Chân 1 | Gate — Gate drive input - apply 10 V VGS for full enhancement |
| Chân 2 | Source — Source (internally connected to pins 3) |
| Chân 3 | Source — Source (internally connected to pin 2) |
| Chân 4 | Kelvin Source — Kelvin-source connection for gate-drive return (improves switching performance) |
| Chân 5 | Drain — Drain (internally connected to pins 6-7 and exposed pad) |
| Chân 6 | Drain — Drain (internally connected to pins 5, 7 and exposed pad) |
| Chân 7 | Drain — Drain (internally connected to pins 5, 6 and exposed pad) |
| Chân 8 | Drain Tab — Drain thermal pad (must be soldered to PCB copper for rated power dissipation) |
Ứng dụng tiêu biểu
ISC016N08NM8ATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Intermediate-Bus Synchronous Rectifier, Industrial Motor Drive H-Bridge (24 V-48 V), Hot-Swap / OR-ing Controller FET, Battery Management Protection FET (24 V / 48 V Pack), Point-of-Load (POL) Buck Converter High-Side FET, Solar Inverter DC-Side Switch.
48 V Telecom Intermediate-Bus Synchronous Rectifier
The ISC016N08NM8ATMA1 is the canonical synchronous-rectifier FET for 48 V intermediate-bus converters (IBC) in telecom and server power supplies. Its 80 V VDS comfortably covers the 48 V nominal bus plus transients, while the 1.6 mOhm typical RDS(on) at 10 V VGS minimizes conduction loss on the low-side. The OptiMOS 8 generation also reduces gate charge (Qg) and output charge (Qoss), enabling 300-600 kHz hard-switched half-bridge topologies. Placed on the low-side of a half-bridge with a complementary 80 V FET on the high side, this part drives >96% peak efficiency in 48 V-to-POL DC-DC bricks.
Được đề xuất
Industrial Motor Drive H-Bridge (24 V-48 V)
The ISC016N08NM8ATMA1 fits industrial H-bridge and three-phase motor drive inverters operating on 24 V or 48 V DC rails. With 29 A continuous drain current (Ta), 268 A pulsed capability, and 263 W Tc dissipation, one MOSFET per switch position can drive fractional-horsepower BLDC, stepper, or brushed-DC motors. The SuperSO8 (PG-TDSON-8) exposed-drain pad gives a low 0.4 C/W Rth(JC), supporting high PWM switching frequencies up to 100 kHz without thermal runaway. The 80 V VDS rating leaves ample margin against inductive flyback in 24 V/48 V systems.
Được đề xuất
Hot-Swap / OR-ing Controller FET
The ISC016N08NM8ATMA1 functions as the pass-FET in 48 V hot-swap and OR-ing controllers for redundant power architectures. Its low RDS(on) reduces steady-state I^2R dissipation across the FET, while the 80 V VDS handles the inrush transient and back-feed conditions during input swap. The SuperSO8 footprint permits compact, high-density blade-server and telecom shelf designs. The OptiMOS 8 cell also offers a robust linear-mode SOA for the brief startup window where the FET operates in its active region.
Được đề xuất
Battery Management Protection FET (24 V / 48 V Pack)
For 24 V and 48 V lithium battery packs, the ISC016N08NM8ATMA1 serves as the charge/discharge protection MOSFET on the high-current path. Its 1.6 mOhm RDS(on) at 10 V VGS adds minimal voltage drop during discharge (only ~48 mV at 30 A), preserving battery capacity. The 80 V VDS withstands load-dump transients on 48 V packs during relay turn-off. Infineon's OptiMOS 8 process provides excellent short-circuit capability - critical for BMS protection where the FET must interrupt fault currents up to 268 A pulsed without failure.
Được đề xuất
Point-of-Load (POL) Buck Converter High-Side FET
The ISC016N08NM8ATMA1 can be used as the high-side FET in 36 V-60 V input point-of-load buck converters that step down to 12 V, 5 V or 3.3 V rails. The 80 V VDS supports 48 V nominal inputs with margin, and the low 1.6 mOhm RDS(on) and gate charge enable high-frequency switching for compact POL modules. The SuperSO8 package keeps the layout small enough for sub-1 inch^2 POL solutions while dissipating up to 263 W (Tc). Infineon's datasheet shows >98% peak efficiency at 600 kHz in 48 V-to-12 V buck topologies using this MOSFET.
Được đề xuất
Solar Inverter DC-Side Switch
In small solar inverters and PV optimizers, the ISC016N08NM8ATMA1 acts as the DC-side disconnect switch for residential string inverters handling up to 60 V VOC strings. The 80 V VDS rating covers 60 V PV strings plus transient surge, and the 29 A continuous current supports 1500 W+ inverter designs. The low RDS(on) minimizes conduction loss during peak MPPT operation, improving overall inverter efficiency. The SuperSO8 exposed-drain pad gives excellent thermal performance in sealed IP65 inverter enclosures.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC016N08NM8ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC016N08NM8 | ISC011N06LM5ATMA1 | ISC009N06LM5ATMA1 | ISC110N12NM6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 / PG-TDSON-8 | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS max) | 80 V | 80 V (same) | 60 V (-25%) | 60 V (-25%) | 120 V (+50%) | 40 V (-50%) |
| Typical RDS(on) at VGS=10V | 1.6 mOhm | 1.6 mOhm (same die) | 1.1 mOhm | 0.9 mOhm | 11 mOhm | 0.58 mOhm |
| Technology / Generation | OptiMOS 8 | OptiMOS 8 | OptiMOS 5 (60 V) | OptiMOS 5 (60 V) | OptiMOS 6 (120 V) | OptiMOS 5 (40 V) |
| Primary Application | 48 V sync-rect, OR-ing | 48 V sync-rect, OR-ing (same) | 24 V-48 V buck high-side | High-current 24 V-48 V sync-rect | 96 V industrial bus / e-mobility | 12 V/24 V high-current OR-ing |
Bảo phân biệt quan trọng
- Lowest RDS(on) in standard SuperSO8 at 80 V (vsISC110N12NM6ATMA1)
- OptiMOS 8 generation - latest cell technology (vsISC011N06LM5ATMA1 (OptiMOS 5))
- SuperSO8 (PG-TDSON-8) is the industry-standard footprint (vsAll alternatives)
Ghi chú thiết kế
Estimated: at continuous 29 A load with 1.6 mOhm RDS(on), conduction loss alone is ~1.35 W. According to the Infineon OptiMOS 8 datasheet, the SuperSO8 (PG-TDSON-8) package has a junction-to-case thermal resistance of approximately 0.4 C/W. To sustain the 263 W (Tc) rating, the PCB must provide a copper drain-pour of at least 6 cm^2 with 2 oz copper (per the 40 x 40 x 1.5 mm FR4 evaluation board). Inadequate thermal design is the most common cause of field failures in this footprint.
Use the Kelvin-source pin (pin 4) for the gate-driver return path, not the main source pins (pins 2-3). This separates the high-current source return from the gate-drive loop, reducing gate ringing and improving switching loss by 5-10% according to Infineon application guidance. Place the input gate-loop decoupling capacitor within 5 mm of the gate-source pins. The exposed drain pad (pin 8) must be soldered to a copper pour with thermal vias (8-12 vias, 0.3 mm drill) to the inner-layer ground plane.
Do not drive the gate below the datasheet-recommended 10 V VGS - the part is rated as a 'normal-level' MOSFET and requires the full 10 V enhancement to achieve the 1.6 mOhm RDS(on). Driving with 6 V or 8 V may leave the FET partially in linear region, causing high dissipation and possible thermal runaway. Also, do not exceed +/-20 V VGS even briefly - the gate oxide will rupture. Add a 10 kohm pull-down resistor from gate to source to ensure the MOSFET stays off if the gate driver is disconnected.
Estimated: in a 48 V-to-12 V synchronous buck stage at 300 kHz and 25 A output, each ISC016N08NM8ATMA1 low-side FET sees approximately 0.4 W conduction loss (P = I^2 * R * (1-D) = 25^2 * 0.0016 * 0.75) and ~0.6 W switching loss from the OptiMOS 8 Qg. Total per-FET loss is ~1 W, well within the package's thermal envelope. For higher switching frequencies (>=600 kHz), consider Infineon's lower-Qg OptiMOS 6 variants in the same SuperSO8 footprint to keep switching losses below 1 W.
Thông tin tuân thủ
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified (standard industrial grade). Halogen-free status not explicitly confirmed in the verified web data - marked as 'unknown'.
