IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
MPN: IQE012N03LM5CGSCATMA1 ✓ Hoạt độngIQE012N03LM5CGSCATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled three-terminal switch in which a gate-source voltage (VGS) induces an inversion layer in the silicon channel, allowing current flow between drain and source. The OptiMOS 5 family is Infineon's fifth-generation 30V-300V trench MOSFET platform optimized for low RDS(on) × gate charge (Qg) figure-of-merit — a key indicator of switching and conduction efficiency. The Source-Down PQFN package flips the silicon die so that the source terminal (instead of the drain) faces the PCB, enabling direct PCB-side cooling and simpler paralleling.
Key features include a maximum RDS(on) of 1.15 mΩ at VGS = 10 V, a continuous ID of 34 A (Ta) / 224 A (Tc), a pulsed avalanche rating defined on the datasheet, and an operating junction range of -55 °C to +175 °C. The 3.3 × 3.3 mm Source-Down PQFN footprint reduces loop inductance in buck and half-bridge topologies, which lowers voltage overshoot during switching transitions. The part is fully RoHS compliant and qualified to JEDEC moisture sensitivity Level 1.
Typical applications include high-density DC-DC point-of-load converters in servers and telecom hardware, hot-swap and OR-ing circuits on 12 V rails, motor-drive half-bridges in e-mobility tools, and synchronous-rectifier stages in telecom rectifiers. The Source-Down package enables direct copper cooling on the bottom pad, a thermal pathway unavailable on conventional drain-down PQFN devices.
When designing with this part, prioritize a large top-side PCB thermal copper area over the Source pad and minimize the high-current source-loop area to reduce parasitic inductance. The dual-side cooled variant permits thermal vias that pull heat into inner copper planes, supporting high continuous current without external heatsinking.
Bộ thay thế dễ dàng lắp đặt cho IQE012N03LM5CGSCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE012N03LM5CGSCATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
IQE020N04LM6CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE036N08NM6CGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5LF2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ019N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC009NE2LS5IATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE012N03LM5CGSCATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) @ Ta | 34 A |
| Continuous Drain Current (ID) @ Tc | 224 A |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 107 W |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) |
| Hộp | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Cấp MSL | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IQE012N03LM5CGSCATMA1
| Chân 1 | Drain — Drain terminal (lead-frame top side) |
| Chân 2 | Gate — Gate terminal (Kelvin-source recommended for high di/dt) |
| Chân 3 | Source (Sense) — Kelvin source-sense pin for gate-drive return |
| Chân 4 | Source — Source terminal (also exposed bottom pad) |
| Chân 5 | Source — Source terminal (also exposed bottom pad) |
| Chân 6 | Source — Source terminal (also exposed bottom pad) |
| Chân 7 | Source — Source terminal (also exposed bottom pad) |
| Chân 8 | Source — Source terminal (also exposed bottom pad) |
| Chân 9 | Source — Source terminal (also exposed bottom pad) |
Khu vực hoạt động an toàn — DC, TC=25°C
Ứng dụng tiêu biểu
IQE012N03LM5CGSCATMA1 phù hợp cho 6 Áp dụngs: High-Density 12 V Point-of-Load Converters, 12 V Hot-Swap and OR-ing Controllers, Synchronous Rectification in Telecom Rectifiers, E-Mobility and Battery-Powered Motor Drive Half-Bridges, USB-PD Power Bank and Battery Management Output Stages, Automotive ECU Load Switching.
High-Density 12 V Point-of-Load Converters
The IQE012N03LM5CGSCATMA1 fits 12 V point-of-load buck converters in server and telecom hardware where PCB area is constrained. Its 1.15 mΩ maximum RDS(on) at VGS = 10 V minimizes high-side and low-side conduction loss: at 30 A continuous load the device dissipates only ~1 W, well within the 107 W Tc rating. The Source-Down PQFN package reduces source-current loop inductance by 30-50% versus conventional drain-down packages, which lowers switching-node overshoot and ringing in 500 kHz - 1 MHz buck topologies. Compared to a typical 30 V parts at ~3 mΩ, this part halves conduction loss.
Được đề xuất
12 V Hot-Swap and OR-ing Controllers
Hot-swap and OR-ing circuits on 12 V server rails require MOSFETs that can sustain inrush currents while minimizing steady-state voltage drop. The IQE012N03LM5CGSCATMA1's 1.15 mΩ RDS(on) keeps voltage drop at 100 A to roughly 115 mV, reducing power dissipation to 11.5 W — manageable on the 3.3 × 3.3 mm Source-Down copper pad with adequate airflow. The 224 A continuous drain current (Tc) rating provides substantial margin during inrush events. The Source-Down package places the source lead at the PCB, simplifying Kelvin-source sensing for accurate current-limit trip thresholds in hot-swap controllers.
Được đề xuất
Synchronous Rectification in Telecom Rectifiers
In 48 V-to-12 V isolated telecom rectifier secondary-side synchronous rectification stages, the IQE012N03LM5CGSCATMA1's 30 V VDS, 1.15 mΩ RDS(on), and 224 A continuous current let it replace Schottky diodes for substantial efficiency gains. At 50 A output per phase, conduction loss is only ~3 W (compared to ~15 W for a Schottky), and the absence of reverse-recovery charge eliminates dead-time losses. The Source-Down PQFN package pulls heat directly into the PCB copper, supporting higher power density than through-hole TO-220 or DPAK alternatives.
Được đề xuất
E-Mobility and Battery-Powered Motor Drive Half-Bridges
Cordless power tools, e-bikes, and small e-mobility platforms use 24-36 V battery packs switched at 20-50 kHz. The IQE012N03LM5CGSCATMA1 is well-suited as a low-side synchronous switch in these half-bridges: 30 V VDS handles the bus with margin, the Source-Down package places source at PCB for low-inductance gate drive loops, and the 1.15 mΩ RDS(on) reduces I²R loss during high-current motor transients. Thermal performance is enhanced by the bottom-side copper pad, allowing direct chassis heat-sinking through thermal interface material.
Được đề xuất
USB-PD Power Bank and Battery Management Output Stages
USB-PD power banks and battery management systems require compact, efficient 5 V/9 V/15 V/20 V output stages that fit in pocket-sized enclosures. The IQE012N03LM5CGSCATMA1's 3.3 × 3.3 mm Source-Down PQFN footprint enables ultra-compact synchronous buck stages that deliver up to 60 W over USB-PD. The 1.15 mΩ RDS(on) maintains efficiency above 96% at 20 V/3 A output, and the Source-Down package enables bottom-side PCB copper cooling for sustained high-power operation in confined enclosures.
Được đề xuất
Automotive ECU Load Switching
Although not AEC-Q100 qualified, the IQE012N03LM5CGSCATMA1 can serve as a low-voltage load switch in non-safety automotive ECUs such as infotainment, lighting, and body control modules when 30 V VDS is sufficient. The -55 °C to +175 °C operating junction range covers automotive under-hood and cabin environments, and the Source-Down PQFN package withstands the vibration and thermal-cycling stresses of vehicle deployment. For AEC-Q100 qualified drop-in equivalents, the Infineon OptiMOS 5 -Q1 family (e.g., IQE012N03LM5CG-Q1) is the recommended upgrade path.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE012N03LM5CGSCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE020N04LM6CGATMA1 | IQE036N08NM6CGSCATMA1 | ISC015N06NM5LF2ATMA1 | ISZ019N03L5SATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PQFN 3.3 × 3.3 mm Source-Down (PG-WHTFN-9-1) | PQFN 3.3 × 3.3 mm Source-Down (PG-WHTFN family) | PQFN 3.3 × 3.3 mm Source-Down (PG-WHTFN family) | PQFN 3.3 × 3.3 mm Source-Down (PG-WHTFN family) | PQFN 3.3 × 3.3 mm Source-Down (PG-WHTFN family) | PG-TDSON-8 (SuperSO2 5 × 6 mm) |
| VDS (Drain-Source Voltage) | 30 V | 40 V | 80 V | 60 V | 30 V | 25 V |
| Technology / Platform | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Lowest RDS(on) at 30 V in the 3.3 × 3.3 mm Source-Down PQFN family (vsISZ019N03L5SATMA1)
- Source-Down dual-side cooling enables higher continuous current in smaller footprint (vsBSC009NE2LS5IATMA1 (SuperSO2 5×6))
- 30 V VDS optimized for 12 V bus systems with safety margin (vsIQE036N08NM6CGSCATMA1 (80 V VDS))
Ghi chú thiết kế
Estimated: at PD = 5 W steady-state, the Source-Down 3.3 × 3.3 mm PQFN with 6 cm² top-side copper (per datasheet test PCB) yields approximately 25 °C junction temperature rise above ambient — well within the 150 °C derated operating envelope. For higher dissipation (>8 W) add thermal vias to inner copper planes; Source-Down allows heat extraction from both bottom pad and top copper. Do not rely on the drain-side for heat extraction in Source-Down packages, as the silicon die has its source terminal soldered to the PCB pad.
Minimize the high-current source loop by placing the input/output capacitors within 1 mm of the Source pad. Use a Kelvin-source connection (separate pin for gate-drive return) to isolate gate-drive current from the high-current source path. The Source-Down configuration naturally minimizes source-loop inductance because the source pad is the largest copper pour in the package — maximize PCB copper area over the Source pad for lowest RthJA.
Do not exceed the datasheet's 30 V VDS rating — in 24 V battery-fed systems, load-dump transients can exceed 40 V, requiring either a TVS clamp or a higher-voltage OptiMOS 5 part (e.g., 40 V IQE020N04LM6CGATMA1 or 60 V ISC015N06NM5LF2ATMA1). Verify VGS(th) minimum and gate-drive voltage: with VGS(th) at 2 V typical, 10 V gate drive is required for full enhancement; logic-level 4.5 V drive is insufficient.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified — automotive designs should select the -Q1 variant of the OptiMOS 5 family. MSL Level 1 per JEDEC J-STD-020 (floor life unlimited). REACH compliance confirmed by Infineon product declaration.
