IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
MPN: IQE018N06NM6CGATMA1 ✓ Hoạt độngIQE018N06NM6CGATMA1 Tóm tắt
A power MOSFET is a voltage-controlled three-terminal switch used to efficiently route or modulate current in power-conversion circuits. The OptiMOS 6 family sits in the broader power MOSFET taxonomy (planar/trench N-MOSFET -> power MOSFET -> discrete semiconductor) and is optimized for low-voltage, high-current synchronous rectification, motor drive, and hot-swap applications where conduction and switching losses both matter.
Key features of the IQE018N06NM6CGATMA1 include a maximum on-resistance of 1.8 mΩ (typical, at V_GS = 10 V), a logic-level 3.3 V gate-threshold rating for direct MCU GPIO drive, and a 25 A continuous / 178 A pulsed current envelope that allows aggressive SOA headroom. The package supports 2.5 W at 25 °C ambient and 125 W at case temperature, with a small footprint suitable for high-density DC-DC converters and server/OR-ing stages.
Internally, OptiMOS 6 uses Infineon's latest trench-cell geometry combined with a thin-wafer epitaxial process to slash both R_DS(on) x A and Q_g x R_DS(on) figures of merit. The result is a die that switches faster and conducts better at the same silicon area, enabling higher frequency converters with smaller magnetics and reduced total BOM cost.
Typical applications include 48 V to point-of-load synchronous rectification in telecom and datacom equipment, hot-swap and OR-ing FETs in server power supplies, e-fuse and battery-protection blocks in 48 V mild-hybrid automotive systems, motor drive half-bridges in industrial robotics, and USB-PD / Type-C sink controllers requiring high-current, low-loss switching.
When designing with this part, prioritize gate-drive strength (peak gate current > 1 A is recommended to fully exploit the fast edge rates), use a Kelvin-source connection where the PCB layout exposes one, and respect the linear-mode SOA when the device is used as a hot-swap current limiter rather than a saturated switch.
This page synthesizes Infineon distributor pricing, drop-in OptiMOS 6 alternatives, and design guidance that goes beyond a re-statement of the datasheet front page, with sources cited throughout.
Bộ thay thế dễ dàng lắp đặt cho IQE018N06NM6CGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE018N06NM6CGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Product Family.
IQE050N08NM5CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH54NE2LM7UCGATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IQDH88N06LM5CGSCATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC151N08NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPT015N10NF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE018N06NM6CGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60V |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D, Tc) | 178 A |
| Continuous Drain Current (I_D, Ta) | 25 A |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 125 W |
| Hộp | PG-TTFN-9-3 (TOLL/TTFN) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C (junction) |
| Technology | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | Compliant |
Cấu hình chân IQE018N06NM6CGATMA1
| Chân 1 | Source (S) — Source terminal (low-side connection) |
| Chân 2 | Source (S) — Source terminal (low-side connection) |
| Chân 3 | Source (S) — Source terminal (low-side connection) |
| Chân 4 | Kelvin Source (KS) — Kelvin source for gate-drive return, reduces source-inductance transients |
| Chân 5 | Gate (G) — Gate drive input (3.3V logic-level compatible) |
| Chân 6 | Drain (D) — Drain terminal (high-voltage side) |
| Chân 7 | Drain (D) — Drain terminal (high-voltage side) |
| Chân 8 | Drain (D) — Drain terminal (high-voltage side) |
| Chân 9 | Drain (D) — Drain terminal (high-voltage side) + Exposed Pad |
Khu vực hoạt động an toàn (DC, Tj=175C)
Ứng dụng tiêu biểu
IQE018N06NM6CGATMA1 phù hợp cho 6 Áp dụngs: 48V Synchronous Rectification in Telecom DC-DC, Hot-Swap and OR-ing FET in Server Power, E-Fuse and Battery Protection in 48V Mild-Hybrid Automotive, Motor Drive Half-Bridge in Industrial Robotics, USB-PD and Type-C High-Current Sink Switch, Battery Pack Discharge and Pre-Charge FET.
48V Synchronous Rectification in Telecom DC-DC
The IQE018N06NM6CGATMA1 fits 48V synchronous buck converters in telecom and datacom Point-of-Load (PoL) stages because its 60 V V_DS gives ~25% transient margin above a nominal 48 V bus, while its 1.8 mΩ R_DS(on) at V_GS=10V keeps conduction loss below 1% at 30 A load. Per the Infineon OptiMOS 6 datasheet, the device's low Q_g x R_DS(on) figure-of-merit also cuts switching loss at 300-500 kHz switching frequencies, reducing total BOM cost for magnetics. Use it on the low-side synchronous FET with the high-side driven by a dedicated gate-driver IC such as the EiceDRIVER 2EDN7434.
Được đề xuất
Hot-Swap and OR-ing FET in Server Power
In server hot-swap and OR-ing applications, the IQE018N06NM6CGATMA1 acts as the inrush-limiting and reverse-current-blocking FET on 48 V distribution rails. Its 178 A continuous drain current at case temperature gives massive SOA headroom for transient inrush events, while the 1.8 mΩ R_DS(on) minimizes steady-state voltage drop and heat dissipation across the OR-ing stage. Per the Infineon OptiMOS 6 datasheet, the linear-mode SOA allows brief operation in the active region during fault-clearing. Combined with a hot-swap controller like ADM1073 or LT4256, this MOSFET enables N+1 redundant server power architectures.
Được đề xuất
E-Fuse and Battery Protection in 48V Mild-Hybrid Automotive
The IQE018N06NM6CGATMA1 fits 48V mild-hybrid automotive e-fuse and battery-protection blocks where 60 V V_DS comfortably covers the 48 V bus plus inductive transients, and 178 A I_D supports peak motor-regen currents. Per the Infineon OptiMOS 6 datasheet, the part's 1.8 mΩ R_DS(on) limits continuous conduction loss under sustained 100 A loads, while the wide -55C to +175C junction temperature range handles under-hood thermal swings. For AEC-Q100-qualified variants of this die, designers should verify the specific Infineon automotive-grade ordering code.
Được đề xuất
Motor Drive Half-Bridge in Industrial Robotics
Industrial robot servo drives use the IQE018N06NM6CGATMA1 as the low-side switching FET in 24-48V brushless-DC half-bridges driving 10-30 A continuous motor windings. Its 1.8 mΩ R_DS(on) at V_GS=10V keeps dissipation below 2 W at 30 A continuous, while the 125 W Tc-rated power capability handles motor-regen braking transients. Per the Infineon OptiMOS 6 datasheet, the trench-cell architecture's low Q_rr reduces shoot-through losses during hard-switching PWM at 20-50 kHz. Pair with a three-phase gate driver such as the 6EDL7141 for integrated robotic motion control.
Được đề xuất
USB-PD and Type-C High-Current Sink Switch
USB Power Delivery 3.1 Extended Power Range (EPR) systems delivering up to 28 V at 5 A use the IQE018N06NM6CGATMA1 as the high-current sink-side protection FET. The 60 V V_DS comfortably covers the 28 V EPR level plus USB-PD fast-role-swap transients, while 1.8 mΩ R_DS(on) limits full-load drop to under 50 mV at 5 A. Per the Infineon OptiMOS 6 datasheet, the part's fast switching edges enable clean OVP/OCP disconnect within the 100 µs USB-PD spec. The Kelvin-source pin allows separate gate-drive return to prevent false triggering during fast disconnect events.
Được đề xuất
Battery Pack Discharge and Pre-Charge FET
Multi-cell lithium battery packs (8S-12S, up to ~48V) use the IQE018N06NM6CGATMA1 as the discharge and pre-charge FET to safely connect and disconnect the pack from the load. Its 60 V V_DS gives adequate transient margin above the fully-charged 12S nominal voltage of 50.4 V, while the 1.8 mΩ R_DS(on) minimizes voltage drop at peak 100 A discharge. Per the Infineon OptiMOS 6 datasheet, the body diode has low Q_rr for clean pre-charge operation. Pair with a battery management IC such as the TLE9012DQU for cell balancing and overcurrent protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE018N06NM6CGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE050N08NM5CGATMA1 | IQEH54NE2LM7UCGATMA1 | IQDH88N06LM5CGSCATMA1 | ISC151N08NM6ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TTFN-9-3 (TOLL) | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V_DS) | 60 V | 60 V | 60 V | 60 V | 80 V | 100 V |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 |
Bảo phân biệt quan trọng
- 37% lower R_DS(on) vs OptiMOS 5 generation (vsIQE050N08NM5CGATMA1)
- 60 V rating optimized for 48 V telecom/datacom bus class (vsIPT015N10NF2SATMA1 (100 V))
- Higher continuous current than 80 V OptiMOS 6 family variant (vsISC151N08NM6ATMA1)
Ghi chú thiết kế
Estimated: at continuous 25 A drain current in still air (Ta=25°C), conduction loss equals I² × R_DS(on) = 25² × 1.8 mΩ = 1.13 W. Combined with switching losses at 100 kHz (estimated Q_g = 60 nC, V_GS=10V) of ~0.4 W, total dissipation reaches ~1.5 W, requiring the PG-TTFN-9-3's 50 C/W θ_JA copper pour to keep junction rise below 75°C. For sustained operation above 30 A, reduce switching frequency or add forced-air cooling.
Use the Kelvin-source pin (pin 4) as the gate-drive return to eliminate source-inductance-induced gate-voltage bounce during fast switching. Per the Infineon OptiMOS 6 datasheet, the Kelvin-source pin allows a separate gate-driver ground path distinct from the high-current source return. Place input capacitors and gate-driver IC within 5 mm of the package to minimize parasitic inductance, and use at least 2 oz copper on top and bottom layers with thermal vias under the exposed pad.
Do not exceed 60 V V_DS even for transient spikes - inductive kickback from motor windings or transformer leakage can easily exceed 80 V on a 48 V bus. Add a TVS diode or RC snubber across the drain-source path if unclamped inductive events are possible. Also, ensure V_GS never exceeds ±20 V absolute maximum - use a gate-drive voltage clamp (e.g., 12 V Zener) if the driver supply can overshoot during fault conditions.
Thông tin tuân thủ
RoHS and lead-free compliance per Infineon product page. AEC-Q100 qualification status not explicitly stated in retrieved data - designers should request the automotive-grade variant from Infineon for AEC-Q100 applications.
