ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
MPN: ISC151N08NM6ATMA1 ✓ Hoạt độngISC151N08NM6ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between drain and source terminals. N-channel MOSFETs like the ISC151N08NM6 are the dominant switching element in modern DC-DC converters, motor drives, and load switches because their low on-resistance minimizes conduction loss. Within the taxonomy, this part belongs to the discrete semiconductor family, specifically the OptiMOS 6 80 V medium-voltage tier, optimized for synchronous rectification and primary-side switching.
Key features include 9.2 A continuous drain current at TA=25 °C, 37 A at TC=25 °C, 3 W power dissipation at TA and 48 W at TC, a 3.5 V typical gate threshold voltage, and a logic-level compatible gate drive. The PG-TDSON-8 FL package provides an exposed pad that drops thermal resistance to the PCB copper pour, enabling compact designs without an external heatsink at moderate duty cycles.
The OptiMOS 6 platform uses Infineon's latest trench cell architecture to balance low RDS(on), low gate charge (Qg), and low output charge (Qoss). These figures directly impact switching loss and dead-time requirements in half-bridge topologies, allowing higher switching frequencies and smaller magnetics in downstream converters.
Typical applications include 48 V telecom isolated DC-DC bus converters, battery management system (BMS) protection FETs, synchronous rectifier stages in server and telecom supplies, hot-swap / eFuse controllers, and motor drive half-bridges in industrial automation. The combination of 80 V rating and 15 mΩ RDS(on) places it in the sweet spot for 24 V/36 V/48 V bus architectures.
When designing with this part, ensure the gate drive produces at least 10 V VGS to fully enhance the channel and minimize RDS(on); a 4.7 Ω to 10 Ω gate resistor typically damps parasitic ringing. Keep the source-loop and gate-loop PCB areas minimal to control voltage overshoot and EMI.
This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho ISC151N08NM6ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC151N08NM6ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
ISC037N12NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ230N10NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5LF2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC151N08NM6ATMA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A |
| Trực流连续电流 (TC=25°C) | 37 A |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 48 W |
| On-Resistance RDS(on) max | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Technology | OptiMOS 6 |
| Hộp | PG-TDSON-8 FL |
| Kiểu lắp đặt | Surface Mount |
| Số lượng chân | 8 |
| Channel Mode | Enhancement |
| Nhiệt độ hoạt động | -55 °C to +175 °C |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISC151N08NM6ATMA1
| Chân 1 | GATE — Gate drive input |
| Chân 2 | DRAIN — Drain terminal (connected to exposed pad) |
| Chân 3 | DRAIN — Drain terminal (connected to exposed pad) |
| Chân 4 | NC — Not connected (per datasheet) |
| Chân 5 | SOURCE — Source terminal |
| Chân 6 | SOURCE — Source terminal |
| Chân 7 | DRAIN — Drain terminal (connected to exposed pad) |
| Chân 8 | DRAIN — Drain terminal (connected to exposed pad) |
ISC151N08NM6 Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
ISC151N08NM6ATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Isolated DC-DC Converter, Battery Management System (BMS) Protection FET, Synchronous Rectifier in Server PSU, Hot-Swap / eFuse Controller Switch, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter / Power Optimizer.
48 V Telecom Isolated DC-DC Converter
The ISC151N08NM6ATMA1 fits primary-side switching in 48 V telecom isolated DC-DC converters because its 80 V VDS rating provides >66% headroom above the 48 V nominal bus, comfortably absorbing transients from cable inductance and load steps. With 15.1 mΩ RDS(on) and 37 A continuous drain current at TC, it handles full-load currents typical of 600-1200 W brick converters without exceeding thermal limits when properly heat-sunk. Placed on the primary-side high-voltage rail of a half-bridge or full-bridge topology, the device's OptiMOS 6 low Qg and Qoss reduce switching loss enough to support 100-200 kHz switching, shrinking the isolation transformer footprint. Compared with older 80 V MOSFETs, the >24% lower RDS(on) cuts conduction loss across the load range, directly improving converter efficiency at 50% load where telecom operators typically measure.
Được đề xuất
Battery Management System (BMS) Protection FET
The ISC151N08NM6ATMA1 serves as a low-side protection FET in 48 V Li-ion battery management systems where its 80 V VDS rating handles pack voltages up to 56 V with margin, and its 37 A continuous current supports 1.5-2 kW discharge paths without active cooling. The 15.1 mΩ RDS(on) dissipates under 1 W at 8 A continuous load, allowing operation without heatsink in sealed battery enclosures. Infineon's OptiMOS 6 cell technology provides avalanche-rated SOA critical for short-circuit events, while the PG-TDSON-8 FL package's exposed pad simplifies thermal coupling to the inner copper layer of the BMS PCB. Designers should add a TVS diode across drain-source for inductive kick protection during disconnect events.
Được đề xuất
Synchronous Rectifier in Server PSU
The ISC151N08NM6ATMA1 is used as the synchronous rectifier FET on the secondary side of 48 V-to-12 V server power supply units, replacing Schottky diodes to gain a >1.5% efficiency boost across the load curve. Its 80 V VDS rating exceeds typical 12 V rails by 6x margin, ensuring robustness during transient ringing and load-dump events on the secondary side. The 15.1 mΩ RDS(on) at VGS=10 V keeps conduction loss under 0.5 W at 6 A output, while OptiMOS 6's body-diode reverse recovery characteristics minimize dead-time loss in CCM operation. Layout tip: minimize the source-loop inductance between this FET and the primary-side control IC gate driver to prevent gate overshoot.
Được đề xuất
Hot-Swap / eFuse Controller Switch
The ISC151N08NM6ATMA1 acts as the main pass element in 48 V hot-swap and eFuse circuits where its 80 V VDS handles inrush transients and backplane faults. The 37 A continuous current rating supports 1.5-2 kW board-level power feeds common in telecom and server backplanes, while the 15.1 mΩ RDS(on) keeps steady-state dissipation manageable. Infineon's OptiMOS 6 SOA in linear mode allows the FET to dissipate fault energy for several milliseconds during current-limit foldback, simplifying eFuse controller design. Add a current-sense resistor and TVS clamp across drain-source for full hot-swap protection.
Được đề xuất
Industrial Motor Drive Half-Bridge
The ISC151N08NM6ATMA1 is deployed in the low-side or high-side position of 48 V industrial motor drive half-bridges for AGVs, robotics, and small servo drives. With 37 A continuous current and 80 V VDS rating, it handles 1-2 kW motor power with margin, while the 15.1 mΩ RDS(on) limits conduction loss during PWM operation at 20-50 kHz switching frequencies. The PG-TDSON-8 FL package's low thermal resistance enables direct PCB cooling without external heatsink in compact industrial designs. Designers should include a gate-source resistor (10-100 kΩ) to prevent unintended turn-on from Miller current during the opposite FET's switching edge.
Được đề xuất
Solar Micro-Inverter / Power Optimizer
The ISC151N08NM6ATMA1 fits as the switching element in 60-80 V solar micro-inverter and DC power optimizer stages where its 80 V VDS rating handles open-circuit PV panel voltages up to ~50 V with adequate derating margin. The 15.1 mΩ RDS(on) and OptiMOS 6 trench cell technology deliver >98% peak efficiency in synchronous buck-boost topologies, while the PG-TDSON-8 FL package's exposed pad enables efficient bottom-side cooling in IP67 outdoor enclosures. For higher-power strings, parallel multiple ISC151N08NM6ATMA1 devices with matched gate-drive timing to share current without thermal runaway.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC151N08NM6ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC037N12NM6ATMA1 | ISZ230N10NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 80 V | 120 V | 100 V | 60 V |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- OptiMOS 6 platform with >24% lower RDS(on) than prior generation (vsISC037N12NM6ATMA1)
- Wide VDS margin at 80 V for 48 V telecom buses (vsISC015N06NM5LF2ATMA1)
- PG-TDSON-8 FL package with exposed thermal pad (vsBSC019N08NS5ATMA1)
Ghi chú thiết kế
Estimated: at continuous TC=25 °C with 48 W power dissipation and Infineon's published PG-TDSON-8 FL thermal resistance of ~50 °C/W junction-to-case, the junction temperature reaches the 175 °C maximum with only ~25 °C margin. Designers must de-rate to TC=85 °C or lower for reliability (industry rule: keep Tj ≤ 125 °C at full load). Mount the exposed pad onto a copper area of at least 100 mm² with thermal vias to the inner layer for proper heat extraction. The 3 W ambient rating implies the device dissipates only ~3 W before reaching Tj=150 °C in still air without a heatsink - always check thermal in actual PCB geometry.
Minimize the source-loop inductance between the ISC151N08NM6ATMA1 source pins and the gate-driver ground return to prevent gate overshoot and ringing during switching transients. Use a 4.7 Ω to 10 Ω gate resistor to damp parasitic oscillation without slowing the switching edge excessively. Keep the drain-source snubber loop area under 10 mm² to limit VDS overshoot below 100 V (20% above the 80 V rating) during hard turn-off events.
Do not operate the ISC151N08NM6ATMA1 with VGS below 8 V - the RDS(on) specification of 15.1 mΩ assumes VGS=10 V. At VGS=4.5 V the device may still turn on but RDS(on) increases 2-3x, causing thermal runaway in high-current designs. Add a 10-100 kΩ gate-source resistor to prevent unintended turn-on from Miller current during the complementary FET's switching edge in half-bridge topologies. Finally, verify that the exposed pad is properly soldered - a dry joint can increase thermal resistance by 30-50%.
Thông tin tuân thủ
RoHS compliant per Infineon product page and DigiKey listing. Standard grade - not AEC-Q100 qualified; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. REACH compliance per EU declaration.
