IQE018N06NM6SCATMA1 - 60V 1.8mΩ OptiMOS 6 N-MOSFET | Infineon
MPN: IQE018N06NM6SCATMA1 ✓ Hoạt độngIQE018N06NM6SCATMA1 Tóm tắt
What is an N-channel power MOSFET? An N-channel MOSFET is a four-terminal voltage-controlled switch (Gate, Drain, Source, Body) that conducts electrons when a positive gate-to-source voltage exceeds its threshold. Within the broader hierarchy, this device is a discrete semiconductor -> power MOSFET -> N-channel MOSFET -> silicon enhancement-mode part of Infineon's OptiMOS 6 family, optimized for low RDS(on) and high figure-of-merit (FOM = RDS(on) × Qg) for switching power-conversion applications.
Key features include a 3.3 V typical gate threshold, very low total gate charge, and Soft-switching optimization per the Infineon OptiMOS 6 datasheet. The 2.5 W power dissipation at TA and 125 W at TC provide designers with generous thermal headroom for high-current rails. Compared to OptiMOS 5, the 60 V OptiMOS 6 family offers >37% lower RDS(on) and ~25% higher FOM (Qg × RDS(on)) per Infineon's family marketing claims.
Architecture-wise, the IQE018N06NM6SC uses Infineon's latest trench-cell silicon process, balancing ultra-low on-resistance with reasonable switching performance. The PG-WHSON-8-1 package provides an exposed drain pad for superior thermal spreading, reducing thermal resistance and enabling compact high-current PCB layouts.
Typical applications include 48 V eFuse / hot-swap circuits, OR-ing FETs in telecom and server power supplies, 12 V to 48 V DC-DC converter synchronous rectification, motor-drive H-bridges, and high-current automotive load switches. The 60 V rating also leaves adequate headroom for 48 V industrial and telecom bus architectures.
When designing with this MOSFET, pay close attention to gate-drive voltage (10 V VGS recommended for full RDS(on) enhancement), PCB copper area for heatsinking, and SOA derating at high VDS / continuous ID. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IQE018N06NM6SCATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQE018N06NM6SCATMA1 (cùng hình factor và footprint) — khác nhau ở Operating Temperature Range, Package, Technology, Product Family.
IQE018N06NM6CGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ072N06NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS5C612NL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SiRA80DP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IQE018N06NM6SCATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A |
| Continuous Drain Current (ID) at TC | 178 A |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 125 W |
| Kiểu lắp đặt | Surface Mount |
| Hộp | PG-WHSON-8-1 (5x6 mm) |
| Khoảng nhiệt độ hoạt động | -55 °C to +175 °C (TJ) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IQE018N06NM6SCATMA1
| Chân 1 | Source — Source terminal (Kelvin source for gate return) |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Gate — Gate drive input (10 V VGS typical for full RDS(on)) |
| Chân 5 | Source — Source terminal |
| Chân 6 | Source — Source terminal |
| Chân 7 | Source — Source terminal |
| Chân 8 | Drain — Drain terminal (also exposed pad on bottom of package) |
Khu vực hoạt động an toàn (DC, T_C = 25 °C)
Ứng dụng tiêu biểu
IQE018N06NM6SCATMA1 phù hợp cho 6 Áp dụngs: 48 V Telecom Hot-Swap / eFuse, OR-ing FET in Server / Telecom Power, 12 V to 48 V DC-DC Synchronous Rectification, Automotive 48 V Mild-Hybrid Load Switch, Brushless DC Motor Drive H-Bridge, Battery Management System (BMS) Protection FET.
48 V Telecom Hot-Swap / eFuse
The IQE018N06NM6SCATMA1 is a strong fit for 48 V telecom hot-swap and eFuse circuits where its 60 V VDS rating provides a comfortable margin above the 48 V nominal bus, and its 1.8 mΩ RDS(on) limits steady-state conduction loss to under 1 W at 25 A. Used as the main pass element behind a hot-swap controller like the LM5060 or ADM1270, it allows inrush limiting via gate ramping while keeping the forward voltage drop low. The 178 A TC current rating supports brief inrush transients during PCB insertion into a live backplane, while the PG-WHSON-8-1's exposed drain pad conducts heat directly into the PCB copper for thermal spreading. Compared to OptiMOS 5 parts, the OptiMOS 6 generation offers >37% lower RDS(on), directly reducing heat dissipation and improving system efficiency.
Được đề xuất
OR-ing FET in Server / Telecom Power
For redundant 48 V or 12 V power-supply OR-ing, the IQE018N06NM6SCATMA1's ultra-low 1.8 mΩ RDS(on) directly minimizes forward voltage drop during normal operation — at 30 A the drop is only ~54 mV, reducing power loss to ~1.6 W per OR-ing FET. The 60 V VDS provides ample margin against load-dump transients in automotive or industrial 48 V buses. Fast turn-off behavior from the OptiMOS 6 process isolates a failed supply within microseconds, preventing back-feeding into the redundant rail. The PG-WHSON-8-1 package's low thermal resistance supports continuous high-current operation on a standard 4-layer PCB. Place the FET in the return path of the diode-OR topology with a controller providing fast gate pull-down for reverse-current blocking.
Được đề xuất
12 V to 48 V DC-DC Synchronous Rectification
The IQE018N06NM6SCATMA1 serves as the low-side or high-side synchronous rectifier in isolated or non-isolated 48 V DC-DC converter topologies. Its 1.8 mΩ RDS(on) and low Qg figure-of-merit translate directly into higher converter efficiency at the 200 kHz to 1 MHz switching frequencies typical of 48 V telecom and server bus converters. At 30 A continuous secondary-side current, conduction loss in the synchronous FET is under 5 W, manageable on a PG-WHSON-8-1 footprint with adequate copper area. The 60 V rating provides safe operation in 48 V nominal systems with up to 10 V transient overshoot. Pair with a digital or analog PWM controller such as the UCC25640x family or Infineon's EiceDriver 2EDN series for full-bridge or active-clamp forward topologies.
Được đề xuất
Automotive 48 V Mild-Hybrid Load Switch
In 48 V mild-hybrid automotive systems, the IQE018N06NM6SCATMA1 functions as a high-current load switch for auxiliary loads such as electric turbochargers, active suspension, and e-chassis actuators. The 60 V VDS rating covers the 48 V bus plus load-dump transients up to 60 V, while the 1.8 mΩ RDS(on) keeps conduction loss under 2.5 W at 40 A continuous load — a critical figure for thermal management in the engine bay. The PG-WHSON-8-1's 5x6 mm footprint supports compact module designs. For AEC-Q101-qualified variants of this OptiMOS 6 die, request the AQ-suffix MPN from Infineon. Pair with a high-side gate driver such as the BTS5008-1EKA or a low-side driver from the 2EDN family.
Được đề xuất
Brushless DC Motor Drive H-Bridge
The IQE018N06NM6SCATMA1 is well-suited as the low-side or high-side switch in BLDC motor-drive H-bridges for industrial and e-mobility applications up to 60 V / 25 A continuous per phase. Its 1.8 mΩ RDS(on) minimizes I²R losses during PWM operation, while the 60 V rating supports 48 V battery packs and 24 V industrial servo drives with margin for back-EMF transients. The PG-WHSON-8-1's exposed drain pad simplifies PCB thermal design — a 2 oz copper pour on a 4-layer board keeps the junction temperature rise under 50 °C at 25 A continuous. Pair with a three-phase gate driver such as the TLE9180D-32QK or 6EDL04N02PR for sensorless or sensored FOC control.
Được đề xuất
Battery Management System (BMS) Protection FET
In a 48 V lithium-ion or LiFePO4 battery management system, the IQE018N06NM6SCATMA1 functions as the charge/discharge protection FET at the pack output. Its 1.8 mΩ RDS(on) reduces steady-state loss during high-current discharge — at 50 A continuous discharge, the pack-level loss is ~5 W, well within BMS thermal budgets. The 60 V VDS rating covers a 48 V nominal pack plus full charge voltage overshoot during regenerative braking. Use two IQE018N06NM6SCATMA1 parts in back-to-back (source-to-source) configuration with separate gate control for true bidirectional blocking, or use a single FET in the high-side with an ideal-diode controller for simplified BMS protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQE018N06NM6SCATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQE018N06NM6CGATMA1 | ISZ072N06NM6ATMA1 | ISC015N06NM5ATMA1 | NTMFS5C612NL | SiRA80DP |
|---|---|---|---|---|---|---|
| Package | PG-WHSON-8-1 (5x6 mm) | PG-WHSON-8-1 (5x6 mm) - same | PG-WHSON-8-1 (5x6 mm) - same | PG-WHSON-8-1 (5x6 mm) - same | SO-8FL (5x6 mm) - pin-compatible footprint | PowerPAK SO-8 (5x6 mm) - pin-compatible footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| RDS(on) max @ VGS=10V | 1.8 mΩ | 1.8 mΩ | 7.2 mΩ (+300%) | 1.5 mΩ (-17%) | 1.8 mΩ (same) | 1.9 mΩ (+6%) |
| Generation / Process | OptiMOS 6 | OptiMOS 6 (CG variant) | OptiMOS 6 | OptiMOS 5 | onsemi N-channel Trench | Vishay TrenchFET Gen IV |
| Approx Unit Price @ 1000pcs (USD, 2026-09-15) | 0.98 | 1.05 | 0.85 | 1.10 | 0.92 | 1.25 |
Bảo phân biệt quan trọng
- Lowest RDS(on) in Infineon OptiMOS 6 60 V PG-WHSON-8-1 family (vsISC015N06NM5ATMA1 (OptiMOS 5))
- Drop-in same-package alternative within Infineon OptiMOS 6 60 V (vsIQE018N06NM6CGATMA1)
- Comparable cross-brand drop-in at lower cost (vsNTMFS5C612NL (onsemi))
Ghi chú thiết kế
Estimated: At VDS=48 V nominal, ID=30 A continuous, and RDS(on)=1.8 mΩ, the steady-state conduction loss is approximately P=I²R = 30² × 0.0018 ≈ 1.62 W. With PG-WHSON-8-1 typical thermal resistance θJA around 50 °C/W on a 1 oz 4-layer PCB with 1 sq inch copper pour, the junction temperature rise is ~80 °C above ambient, allowing safe operation up to ~95 °C ambient. For 50 A continuous operation, expect ~4.5 W dissipation requiring ~2 sq inches of copper or a small heatsink.
Design the PG-WHSON-8-1 land pattern to expose the bottom drain pad to a continuous copper pour on the top layer, with thermal vias (typically 9-16 vias of 0.3 mm drill) stitching the pad to inner-layer copper ground planes. Source pins 1-3, 5-7 should tie together with short, wide traces to minimize source inductance. Place the gate drive return (Kelvin source) on pin 1 or pin 8 directly back to the gate-driver ground, NOT through the high-current source path, to avoid gate-drive ringing.
Minimize the gate-drive loop area by placing the gate driver within 5 mm of the gate pin, with gate series resistor (typically 10-47 Ω) close to the driver output. For switching frequencies above 100 kHz, add a small gate-source pull-down resistor (10-100 kΩ) to keep the FET off during controller start-up. Use a 100 V-rated, 100 nF ceramic bypass capacitor directly across the drain-source of each synchronous FET in half-bridge topologies to suppress voltage ringing from parasitic inductance.
Do NOT operate the IQE018N06NM6SCATMA1 at VGS below 6 V at full load — the RDS(on) curve rises sharply below 6 V, defeating the 1.8 mΩ spec which is specified at VGS=10 V. In low-side applications, ensure the gate-driver ground returns to pin 1 (Kelvin source) not the high-current source trace, otherwise the Miller current will induce false turn-off. Verify SOA at the intended VDS / ID operating point before paralleling multiple FETs — current sharing depends on matched RDS(on) and thermal coupling.
Thông tin tuân thủ
RoHS compliant and lead-free per Infineon product page; standard SCATMA1 suffix is non-automotive grade; AEC-Q101 qualified variants available with 'AQ' suffix ordering code. Halogen-free per JEDEC JS709B standard.
