IRFP3710PBF - 100V, 57A N-Channel HEXFET MOSFET | Infineon
MPN: IRFP3710PBF ✓ Hoạt độngIRFP3710PBF Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. Within the broader taxonomy, the IRFP3710PBF belongs to N-channel enhancement-mode MOSFETs, falling under power management semiconductors and discrete transistors. HEXFET is Infineon's (formerly International Rectifier's) proprietary power MOSFET technology, characterized by a hexagonal cell layout that maximizes silicon area utilization, lowering RDS(on) per unit die area. Fifth-generation HEXFETs advanced this by reducing both on-resistance and gate charge simultaneously - a traditional trade-off in MOSFET design.
Key differentiating specifications include 25 mOhm max RDS(on) at VGS = 10 V, fast switching speed, dynamic dv/dt rating, and lead-free TO-247AC construction. The 200 W power dissipation capability at Tc = 25C makes this device particularly suited for high-power converters where thermal performance is critical. The fully avalanche-rated design ensures robustness under inductive switching transients, while the isolated mounting hole of the TO-247AC package simplifies heatsink assembly compared to the older TO-218.
Technical depth: the IRFP3710PBF uses advanced process technology to achieve extremely low on-resistance per silicon area. Its low RDS(on) of 25 mOhm at 57 A conduction yields conduction losses of approximately 81 W at full rated current - requiring substantial thermal management. Gate charge of 66.7 nC typical indicates moderate gate drive requirements, suitable for standard MOSFET drivers without specialized gate current capability.
Typical applications include high-current DC motor drives, synchronous rectifier stages in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and welding equipment. The 100 V rating provides adequate headroom for 48 V telecom buses and industrial 72 V systems. In automotive applications, it is commonly deployed in 12 V/24 V battery switching, electronic load dump protection, and high-current solenoid drivers.
When designing with the IRFP3710PBF, ensure adequate heatsinking to maintain junction temperature below 150C at full load. Use a gate drive voltage of 10 V for guaranteed full enhancement, and incorporate a gate resistor of 10-100 ohm to control switching transients and EMI. The TO-247AC isolated tab allows direct mounting to a heatsink without insulating washers when properly grounded.
This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, cross-referenced drop-in alternatives sourced from web data, and practical design notes not consolidated in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IRFP3710PBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFP3710PBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Lead-Free.
IRF3710PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFB3207ZPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFB4020PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFB4110PBF
✅ Drop-In ⚠️ Thông số chưa được xác minh✓ Còn hàng
$1.55 / Đơn vị
Xem tài liệu →STP55NF06
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
HUF75645P3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFP3710PBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET, Fifth Generation |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 57 A (Tc) |
| Power Dissipation (PD) | 200 W (Tc) |
| On-Resistance RDS(on) Max | 25 mOhm at VGS = 10 V |
| Gate Charge (Qg) Typical | 66.7 nC |
| Gate-to-Source Voltage Max | ±20 V |
| Khoảng nhiệt độ hoạt động | -55C to +175C (Tj) |
| Hộp | TO-247AC (3-pin + tab) |
| Kiểu lắp đặt | Through Hole |
| Avalanche Rating | Fully Avalanche Rated |
| dv/dt Rating | Dynamic dv/dt Rated |
| Lead-Free | Yes |
| Trạng thái RoHS | Compliant |
| Technology | IR MOSFET (HEXFET) |
Cấu hình chân IRFP3710PBF
| Chân 1 | Gate — Gate control input; drives the MOSFET on/off via VGS threshold |
| Chân 2 | Drain — Drain terminal; also electrically connected to the mounting tab |
| Chân 3 | Source — Source terminal; typically connected to circuit ground or low-side return |
| Chân Tab | Drain (Tab) — Mounting tab electrically tied to Drain (pin 2); provides thermal dissipation path to heatsink |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRFP3710PBF phù hợp cho 7 Áp dụngs: High-Current DC Motor Drive, Synchronous Rectifier in SMPS, Solar Inverter Power Stage, Uninterruptible Power Supply (UPS), Welding and Plasma Cutting Equipment, Automotive 12 V/24 V Load Switching, Battery Management and Protection.
High-Current DC Motor Drive
The IRFP3710PBF's 57 A continuous drain current and 25 mOhm RDS(on) make it well-suited for high-current brushed DC motor drive circuits in industrial automation, robotics, and electric vehicle traction subsystems. When used as the low-side switching element in a PWM-driven H-bridge at 24 V or 48 V bus voltages, the device dissipates approximately 81 W at full rated current - so a substantial heatsink with thermal compound is essential. The 100 V VDS rating provides comfortable margin above the typical 48 V bus with inductive flyback transients. Compared to IGBTs, the MOSFET's faster switching enables higher PWM frequencies (>20 kHz) for smoother torque control and reduced audible noise. The TO-247AC isolated mounting tab simplifies mechanical assembly in chassis-mounted motor controllers.
Được đề xuất
Synchronous Rectifier in SMPS
In isolated switch-mode power supply (SMPS) designs such as 48 V-to-12 V telecom bricks and 400 V-to-48 V server converters, the IRFP3710PBF serves as the synchronous rectifier MOSFET on the secondary side. Its 25 mOhm RDS(on) at 10 V VGS delivers conduction efficiency approaching 97% at 30 A load. The 66.7 nC typical gate charge enables switching frequencies up to 100 kHz without excessive gate driver losses. Fully avalanche-rated design absorbs the energy of transformer leakage inductance spikes during dead-time transitions, which is critical for reliability in hard-switched full-bridge topologies. The 175C maximum junction temperature permits operation in compact, fan-less designs with adequate copper heatsink area.
Được đề xuất
Solar Inverter Power Stage
The IRFP3710PBF is commonly deployed in the boost and inverter stages of solar micro-inverters and string inverters operating from 24 V/48 V PV panel arrays. Its 100 V VDS rating accommodates open-circuit panel voltages up to 80 V with adequate transient margin. The low RDS(on) of 25 mOhm minimizes conduction loss during continuous MPPT operation, where panel-to-grid efficiency directly impacts energy yield. The fast switching capability (typical turn-on delay under 30 ns) reduces switching loss at the 50-100 kHz converter frequencies typical of residential solar topologies. The TO-247AC package allows direct mounting to the inverter chassis heatsink, providing the thermal performance required for outdoor continuous-duty operation at ambient temperatures up to 70C.
Được đề xuất
Uninterruptible Power Supply (UPS)
In online UPS systems rated 1-5 kVA, the IRFP3710PBF serves in the battery-to-inverter DC bus switching stage, where it must handle inrush currents during battery cold-crank and overload conditions. The 200 W power dissipation rating provides robust thermal margin for sustained fault-current handling. Its dynamic dv/dt rating ensures reliable operation with the fast-switching gate drivers used in high-frequency UPS inverter bridges operating at 20-40 kHz. The fully avalanche-rated characteristic is essential when switching inductive battery cables with significant parasitic inductance. The TO-247AC through-hole package matches the rugged mechanical construction expected in industrial UPS chassis with bolted-down heatsink assemblies.
Được đề xuất
Welding and Plasma Cutting Equipment
The IRFP3710PBF's 57 A continuous current and 100 V VDS rating make it a workhorse in inverter-based welding power sources operating from single-phase 220 VAC input. In the secondary-side rectifier and chopper stages, the MOSFET handles the high di/dt pulses characteristic of arc welding with low conduction loss. The fully avalanche-rated design absorbs the energy of arc strikes and inductance-induced voltage spikes without failure. The robust TO-247AC package withstands the thermal cycling and mechanical vibration typical of portable welding equipment. Compared to the older IRFP460 and similar 500 V MOSFETs, the IRFP3710PBF's 25 mOhm RDS(on) at 100 V significantly reduces conduction loss in low-voltage secondary chopper stages, improving overall welding efficiency by 2-3%.
Được đề xuất
Automotive 12 V/24 V Load Switching
In automotive ECU and power distribution modules, the IRFP3710PBF switches high-current loads such as glow plugs, starter solenoids, HVAC blower motors, and electric power steering pumps. Its 100 V VDS rating comfortably handles 24 V truck bus transients including load-dump spikes up to 60 V. The -55C to +175C operating junction temperature range covers the full automotive under-hood thermal envelope. While not AEC-Q101 qualified, the standard IRFP3710PBF is widely used in non-safety automotive applications such as aftermarket electronics and heavy-equipment subsystems. The TO-247AC package is favored in commercial-vehicle applications where PCB space is less constrained and direct chassis heatsink mounting simplifies thermal design.
Được đề xuất
Battery Management and Protection
In lithium battery pack protection circuits and battery management systems (BMS), the IRFP3710PBF serves as the main disconnect MOSFET in high-current battery packs (50-100 Ah capacity) for e-bikes, portable power stations, and industrial battery backups. Its 25 mOhm RDS(on) at 50 A conduction adds only ~62 W of loss - manageable with a small PCB copper heatsink area. The low gate charge of 66.7 nC allows simple gate driving directly from the BMS microcontroller's GPIO without specialized driver ICs. The 100 V VDS rating handles battery stacks up to 28S lithium-ion (nominally 116 V) with comfortable headroom. Compared to dedicated battery-protection MOSFETs like the IPD80R600P7ATMA1, the IRFP3710PBF offers much lower RDS(on) for high-current pack designs where conduction loss dominates the discharge efficiency budget.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFP3710PBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRF3710PBF | IRFB3207ZPBF | IRFB4020PBF | IRFB4110PBF | STP55NF06 | HUF75645P3 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Package | TO-247AC | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V (same) | 75 V (-25%) | 200 V (+100%) | 100 V (same) | 60 V (-40%) | 100 V (same) |
| Continuous Drain Current (ID) | 57 A | 57 A (same) | 170 A (+198%) | 18 A (-68%) | 72 A (+26%) | 55 A (-4%) | 75 A (+32%) |
| On-Resistance RDS(on) Max | 25 mOhm | 25 mOhm (same) | 3.6 mOhm (-86%) | 70 mOhm (+180%) | 12 mOhm (-52%) | 18 mOhm (-28%) | 14 mOhm (-44%) |
| Operating Temperature Range | -55C to +175C | -55C to +175C (same) | -55C to +175C (same) | -55C to +175C (same) | -55C to +175C (same) | -55C to +175C (same) | -55C to +175C (same) |
| Lead-Free / RoHS | Yes / Compliant | Yes / Compliant (same) | Yes / Compliant (same) | Yes / Compliant (same) | Yes / Compliant (same) | Yes / Compliant (same) | Yes / Compliant (same) |
Bảo phân biệt quan trọng
- Best-in-class low RDS(on) per die area among 100 V TO-247AC HEXFETs (vsHUF75645P3)
- Fully avalanche-rated design absorbs inductive switching transients (vsSTP55NF06)
- Higher voltage rating than competing high-current alternatives (vsIRFB3207ZPBF)
- Wide -55C to +175C operating junction temperature range (vsIRFB4020PBF)
Ghi chú thiết kế
At full rated current of 57 A with 25 mOhm RDS(on), conduction loss approximates P = I^2 x R = 81 W, which exceeds the practical continuous dissipation capability without a substantial heatsink. With TO-247AC junction-to-ambient thermal resistance of ~62 C/W (free air) or ~0.5 C/W with proper heatsinking, the device requires either (a) a heatsink with thermal resistance below 1 C/W, or (b) derating to 30-40 A continuous. Apply thermal compound between tab and heatsink surface. The TO-247AC tab is electrically tied to drain, so the heatsink may be at drain potential - isolate if needed. Verify Tj < 150C in worst-case operating conditions.
Minimize parasitic inductance in the high-current switching loop by keeping source return, drain connection, and DC bus capacitors physically close together - typically within a 1 cm loop area. Use wide PCB traces or bus bars rated for at least 60 A continuous. For through-hole TO-247AC designs, use 2 oz copper on inner layers and direct bolted bus-bar connections for the drain tab. Add a 10-100 ohm gate resistor to dampen ringing caused by gate-driver inductance and MOSFET input capacitance; for very high di/dt applications, use a ferrite bead in series with the gate. Place a gate-source resistor of 10 kohm or less to keep the device off during floating-gate transients.
Avoid exceeding VGS(max) of ±20 V - gate voltage transients above this destroy the thin gate oxide. Use a gate driver with proper UVLO and gate voltage clamping. Do not operate near the SOA boundary without proper thermal design - pulsed current capability is much higher than DC, but only for short pulses. Verify avalanche energy rating (EAS) for inductive load switching; add a TVS diode or snubber circuit if the application's avalanche energy exceeds the datasheet rating. Finally, the TO-247AC mounting tab is electrically hot (drain potential) - never assume it is isolated or you may short-circuit the drain to chassis ground.
Gate drive circuit design is critical for reliable switching of the IRFP3710PBF. Use a dedicated MOSFET gate driver (e.g., IR2104 or similar) capable of sourcing/sinking 1-2 A peak gate current to achieve <100 ns switching times. Place the gate driver physically close to the MOSFET (within 2 cm) to minimize gate-loop inductance. For high-side applications, use a bootstrap driver or isolated gate driver topology. Add a small gate-source resistor (10-100 kohm) to prevent false turn-on from dv/dt-induced gate voltage spikes in half-bridge configurations.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Lead-free (Pb-free) per PBF suffix. Not AEC-Q100/AEC-Q101 qualified - this is an industrial/commercial grade part. For AEC-Q101 qualified alternatives, consider Infineon's automotive-grade OPTIREG MOSFET family.
