IRLL024ZTRPBF - 55V 5A 60mΩ N-Ch MOSFET SOT-223 | Infineon
MPN: IRLL024ZTRPBF ✓ Hoạt độngIRLL024ZTRPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (in this case, an N-channel enhancement-mode structure) to modulate current flow between drain and source. HEXFET is a trench-gate technology from International Rectifier (now Infineon) that places the gate electrode inside vertical trenches, dramatically lowering RDS(on) per unit silicon area. Within the broader taxonomy, this part sits at: HEXFET power MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key features of the IRLL024ZTRPBF include a logic-level gate drive threshold that allows direct control from 3.3 V or 5 V microcontroller GPIO pins, an operating junction temperature up to 150 °C, fast switching speed, and an improved repetitive avalanche rating. The SOT-223 (TO-261-4) footprint offers three active pins (Gate, Drain, Source) plus a large tab lead that doubles as the drain connection and a thermal pad. Per distributor listings, continuous power dissipation is 1 W at TA=25 °C with the tab soldered to a minimum 1 square-inch copper pour.
Technically, the device uses Infineon's latest-generation HEXFET process that combines extremely low on-resistance per silicon area with optimized gate charge (typical Qg = 7 nC), allowing fast turn-on/turn-off transitions at moderate switching frequencies. The logic-level VGS(th) eliminates the need for a gate-driver IC when driven directly from MCU I/O.
Typical applications include DC load switching in industrial 24 V systems, low-side switches in synchronous buck converters, motor and solenoid drivers up to 5 A, battery protection circuits in 1S-3S Li-ion packs, and replacement of relays with solid-state switches. The wide VDS rating also makes it useful for hot-swap controllers in 12 V and 24 V backplanes.
When designing with the IRLL024ZTRPBF, ensure the tab/lead 4 thermal pad is soldered to at least 1 square inch of copper area on the PCB. Switching inductive loads such as solenoids or motors requires a flyback diode across the load. Verify that the upstream gate signal can both source and sink at least 1 µA to charge and discharge the gate capacitance.
This page synthesizes distributor pricing, drop-in alternatives sourced from Infineon's SOT-223 N-channel MOSFET family, and practical PCB-layout and thermal notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IRLL024ZTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLL024ZTRPBF (cùng hình factor và footprint) — khác nhau ở Technology, Package, Operating Temperature Range, FET Type, MSL Level.
IRLL024ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLL024ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLL024ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSS214NWH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP125H6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLL024ZTRPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (trench-gate) |
| FET Type | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | 55 V |
| Gate-Source Voltage (VGS) max | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | 7 nC |
| Power Dissipation (PD) at TA=25°C | 1 W |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C |
| Hộp | SOT-223 (TO-261-4) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (unlimited floor life) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IRLL024ZTRPBF
| Chân 1 | Gate — MOSFET gate input; logic-level drive from 3.3 V or 5 V source |
| Chân 2 | Drain — MOSFET drain; internally connected to tab (pin 4) |
| Chân 3 | Source — MOSFET source; connect to circuit ground |
| Chân 4 | Tab / Drain — Drain connection and primary thermal pad; solder to copper pour |
Khu vực hoạt động an toàn (SOT-223, TC=25°C)
Ứng dụng tiêu biểu
IRLL024ZTRPBF phù hợp cho 7 Áp dụngs: 24V Industrial DC Load Switching, Low-Side Switch in Synchronous Buck Converters, Battery Protection in 1S-3S Li-ion Packs, Solid-State Relay Replacement, LED Driver Low-Side PWM Dimming, Hot-Swap / Inrush Limiting in 12V Backplanes, Small DC Motor and Solenoid Driver.
24V Industrial DC Load Switching
The IRLL024ZTRPBF is well suited for 24 V industrial DC load switching because its 55 V VDS rating provides a comfortable 2× safety margin above 24 V bus transients, and its 5 A continuous ID handles typical relay coils, solenoid valves, and indicator loads. The logic-level VGS(th) of 1.0-2.5 V allows direct drive from a 3.3 V or 5 V PLC output module without an external gate-driver IC. Place a flyback diode across inductive loads such as solenoids; the device's 150 °C TJ max and HEXFET avalanche rating tolerate the inductive kickback. At 5 A the RDS(on) of 60 mΩ causes about 1.5 W conduction loss, requiring the SOT-223 tab to be soldered to at least 1 square inch of copper pour.
Được đề xuất
Low-Side Switch in Synchronous Buck Converters
The IRLL024ZTRPBF works as the low-side switch in low-power synchronous buck converters up to 5 A output. Its low total gate charge (Qg typical 7 nC) keeps switching losses low at frequencies up to 500 kHz, while the low RDS(on) of 60 mΩ at 10 V VGS maintains high efficiency at full load. The logic-level gate threshold allows direct PWM drive from a 3.3 V controller output. In a typical 12 V to 3.3 V / 5 A buck topology, this part pairs with a P-channel or N-channel high-side switch; design trade-off vs dedicated gate-driver ICs is that switching above 500 kHz may require a driver to overcome the input capacitance quickly.
Được đề xuất
Battery Protection in 1S-3S Li-ion Packs
The IRLL024ZTRPBF is a cost-effective choice for low-side battery protection MOSFETs in 1S-3S Li-ion packs (4.2 V to 12.6 V nominal). Its 55 V VDS rating easily covers the maximum charge voltage of a 3S pack (12.6 V), and the 5 A ID handles the typical discharge current of consumer battery packs. Logic-level drive simplifies the BMS controller interface. For high-side protection, an N-channel MOSFET would need a charge pump; a P-channel alternative is typically preferred in that position. Verify the battery management IC can source/sink enough gate current for the 7 nC Qg at the required switching frequency.
Được đề xuất
Solid-State Relay Replacement
The IRLL024ZTRPBF can directly replace electromechanical relays in low-current DC switching applications, eliminating mechanical bounce, contact wear, and audible click. Its 5 A continuous ID covers most signal-relay and small-power-relay loads up to 30 V DC, and the HEXFET process provides fast sub-microsecond switching compared to millisecond relay actuation times. Drive the gate directly from an MCU GPIO at 3.3 V or 5 V logic. For AC loads or high-voltage DC (>30 V), use a dedicated solid-state relay IC; the IRLL024ZTRPBF is not rated for AC line switching without additional isolation and snubber circuitry.
Được đề xuất
LED Driver Low-Side PWM Dimming
The IRLL024ZTRPBF handles low-side PWM dimming of LED strings up to 5 A continuous, including high-brightness automotive LED strips, architectural lighting, and indicator panels. Logic-level gate drive allows direct connection to a 3.3 V microcontroller PWM output, eliminating gate-driver stages. At 1 kHz PWM frequency with 5 nC Qg, switching losses are negligible (well under 10 mW). The SOT-223 package dissipates the 60 mΩ × I² heat load efficiently when the tab is properly soldered. Place a gate-series resistor (10-100 Ω) to slow the switching edge and reduce EMI; add a pull-down resistor (10-100 kΩ) from gate to source to prevent false turn-on during MCU reset.
Được đề xuất
Hot-Swap / Inrush Limiting in 12V Backplanes
The IRLL024ZTRPBF works as an inrush-limiting MOSFET in 12 V hot-swap backplane applications, controlling the rate of capacitor charging when a card is plugged into a live bus. The 55 V VDS provides comfortable margin above 12 V plus transients, and the 5 A continuous ID handles typical card supply currents. The logic-level gate threshold allows direct drive from a hot-swap controller IC. For sustained operation above 3 A, use the SOT-223 with substantial copper thermal relief; the part dissipates approximately I² × RDS(on) watts during normal operation. Pair with a dedicated hot-swap controller IC for current monitoring and fault protection.
Được đề xuất
Small DC Motor and Solenoid Driver
The IRLL024ZTRPBF is a cost-effective low-side driver for small DC motors, solenoid valves, and relays up to 5 A. The HEXFET process delivers fast switching (sub-100 ns) for PWM speed control of brushed DC motors, while the 55 V VDS and 150 °C TJ max handle the inductive flyback of brushed motor windings when paired with a flyback diode. Logic-level gate drive simplifies interface to 3.3 V or 5 V microcontrollers. For bidirectional motor control (H-bridge), use two IRLL024ZTRPBF devices in a low-side configuration plus high-side switches; for single-direction applications, a half-bridge with one IRLL024ZTRPBF and one P-channel MOSFET is common.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLL024ZTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLL024ZTRPBF (auto-grade) | IRLL024ZPBF | BSS214NWH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| FET Type / Polarity | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel depletion-mode (verify polarity) |
| Gate Threshold VGS(th) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | Logic-level (verify exact range) | Depletion-mode (different VGS control) |
Bảo phân biệt quan trọng
- Logic-level gate drive from 3.3V / 5V MCU GPIO without gate-driver IC (vsIRFZ44N (standard 10V gate-threshold))
- Lower RDS(on) per mm² silicon area than previous-generation HEXFET (vsIRLL024N (older generation))
- SOT-223 footprint enables smaller PCB layouts than D-PAK alternatives (vsIRLR024N (D-PAK / TO-252))
Ghi chú thiết kế
Estimated: the IRLL024ZTRPBF SOT-223 package dissipates 1 W at TA=25 °C only when the tab (pin 4) is soldered to at least 1 square inch (645 mm²) of copper pour. Without adequate copper, thermal resistance rises and the 5 A continuous current rating cannot be achieved. For applications sustaining >3 A, add thermal vias under the tab to inner copper planes or use a D-PAK/TO-252 alternative such as IRLR024N. Maximum junction temperature is 150 °C; derate linearly above 25 °C ambient.
Place a 10-100 Ω gate-series resistor to limit ringing and slow the switching edge, reducing EMI. Add a 10-100 kΩ gate-to-source pull-down resistor to prevent false turn-on during MCU reset or power-up. The tab (pin 4) must be soldered to copper for both electrical connection to the drain and thermal dissipation; do not rely on pin 2 alone for the drain connection in high-current paths. Keep the gate trace short to minimize parasitic inductance that can cause gate-oscillation in fast-switching applications.
Driving inductive loads such as solenoids, motors, or relay coils requires a flyback diode across the load - omitting the diode causes voltage spikes that exceed the 55 V VDS rating and destroys the MOSFET. Do not exceed VGS of ±16 V; ESD-sensitive gates can be damaged by static discharge during handling. Verify VGS(th) is below the MCU GPIO logic-high level (typically 3.3 V or 5 V) before assuming direct drive is possible. The SOT-223 tab is internally connected to the drain - never assume it is floating.
Estimated: at 5 A continuous load, conduction loss = I² × RDS(on) = 25 × 0.06 = 1.5 W. This already approaches the 1 W package rating at 25 °C ambient without thermal derating. For sustained 5 A operation, either reduce duty cycle, lower the load current, or use a larger package (D-PAK). Switching losses at low PWM frequencies (<10 kHz) are negligible; above 100 kHz, switching loss (estimated 0.5 × VDS × ID × tr × fsw) becomes significant and a gate-driver IC is recommended.
Thông tin tuân thủ
RoHS compliant per Infineon product page (Pb-free 'PBF' suffix). Standard industrial grade; AEC-Q100 qualified variants available separately under same MPN with auto-grade screening. Halogen-free status not explicitly stated in verified data - marked unknown.
