BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSZ0501NSIATMA1 ✓ Hoạt độngBSZ0501NSIATMA1 Tóm tắt
What is an N-Channel Power MOSFET? An N-Channel MOSFET is a voltage-controlled semiconductor switch in which a positive gate-source voltage creates an n-type conduction channel between drain and source. Power MOSFETs are widely used as switching elements in DC-DC converters, motor drivers, and load switches, sitting in the hierarchy: N-Channel MOSFET -> power MOSFET -> discrete semiconductor -> active component. The OptiMOS 5 generation specifically targets synchronous-rectification, OR-ing, and hot-swap applications in computing, telecom, and consumer systems.
Key features include ultra-low on-state resistance for reduced conduction losses, a small 3.3 x 3.3 mm PG-TSDSON-8-FL footprint, integrated source-connected Schottky-like body diode optimized for synchronous rectification, and a 30 V drain-source rating suitable for 12 V rails and 19 V notebook adapter buses. The combination of low Rds(on) and small package delivers the high power density OptiMOS 5 is known for.
Technically, the device is built on Infineon's advanced trench technology, which minimizes cell pitch and FOM (figure of merit). Compared to the prior OptiMOS 3 generation, this part achieves lower gate charge and switching losses, making it well suited to high-frequency DC-DC converters. The drain pad is the thermal pad, enabling direct PCB heat spreading.
Typical applications include synchronous rectification in 12 V VRM / POL converters, DC-DC buck and boost converters in notebooks and servers, low-voltage motor drive, battery protection and OR-ing in multi-cell battery packs, and high-side / low-side switching in telecom bricks. The 30 V rating also gives headroom for 24 V industrial rails.
Design considerations include keeping the gate drive at 10 V for full enhancement, minimizing gate-loop inductance for clean switching edges, and providing sufficient PCB copper on the exposed drain pad to dissipate up to 2.1 W at ambient (or 50 W with TC heatsinking). Place the gate resistor close to the gate pin to dampen ringing.
This page synthesizes distributor pricing, drop-in alternatives within the same PG-TSDSON-8-FL footprint, and practical design notes not collected in any single manufacturer datasheet, giving procurement and design engineers a single reference for the BSZ0501NSIATMA1.
Bộ thay thế dễ dàng lắp đặt cho BSZ0501NSIATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ0501NSIATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Operating Junction Temperature, Series.
BSZ031NE2LS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0501NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC0502NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSZ017NE2LS5IATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC028N06NSTATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSZ0501NSIATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 |
| Product Family | OptiMOS 5 (25V/30V) |
| FET Type | N-Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Id) at TA=25C | 25 A |
| Continuous Drain Current (Id) at TC=25C | 40 A |
| Power Dissipation (Pd) at TA=25C | 2.1 W |
| Power Dissipation (Pd) at TC=25C | 50 W |
| Operating Mode | Enhancement Mode |
| Configuration | Single with built-in diode |
| Hộp | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Kiểu lắp đặt | Surface Mount |
| Number of Terminals | 8 |
| JESD-609 Code | e3 (matte tin) |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSZ0501NSIATMA1
| Chân 1 | Gate — MOSFET gate drive input |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal (low-impedance path) |
| Chân 4 | Source — Source terminal |
| Chân 5 | Drain (Thermal Pad) — Drain terminal and thermal pad - solder to PCB copper |
| Chân 6 | Drain — Drain terminal |
| Chân 7 | Drain — Drain terminal |
| Chân 8 | Source — Source terminal |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
BSZ0501NSIATMA1 phù hợp cho 7 Áp dụngs: Synchronous Rectification in 12 V VRMs, DC-DC Buck Converters in Notebooks, Battery Protection / OR-ing, Telecom Brick Converters, Low-Voltage Motor Drive, Hot-Swap / In-Rush Protection, USB-PD Power Path Switching.
Synchronous Rectification in 12 V VRMs
The BSZ0501NSIATMA1 fits the synchronous-rectification (low-side) slot of a 12 V VRM or POL converter because its 30 V Vds and 25 A continuous Id comfortably handle 12 V rails with margin, while the small PG-TSDSON-8-FL 3.3 x 3.3 mm footprint maximises power density. Its low Rds(on) and gate charge translate directly to higher converter efficiency at the 300-500 kHz switching frequencies common in multiphase VRMs, and the central exposed drain pad pulls heat directly into the inner copper layer. In a typical 4-phase VRM design, replacing an older OptiMOS 3 part with the BSZ0501NSIATMA1 typically yields 1-2% efficiency gain at full load.
Được đề xuất
DC-DC Buck Converters in Notebooks
The BSZ0501NSIATMA1 is well matched to 19 V-input / 5 V-1 V buck converters in ultrabook and notebook power trees where the 30 V rating gives sufficient transient margin against adapter plug-in spikes. The OptiMOS 5 trench technology minimises switching losses so that the converter can run at 1 MHz+ with high efficiency, shrinking the output inductor and total PCB area. At VIN=19 V, VOUT=5 V, IOUT=10 A the BSZ0501NSIATMA1 dissipates roughly (Rds(on) x I^2) plus switching losses, manageable in the 3.3 x 3.3 mm footprint with 2 oz copper.
Được đề xuất
Battery Protection / OR-ing
Battery-pack protection and OR-ing FETs require low Rds(on) at high continuous current and a small footprint; the BSZ0501NSIATMA1's 25 A TA rating and 3.3 x 3.3 mm outline fit 2-3S battery OR-ing designs. The 30 V Vds gives headroom for multi-cell packs and inductive kick-back during hot-swap events. The body diode is suitable for low-frequency switching OR-ing; for high-frequency hot-swap, drive the gate at 10 V with a soft-start circuit. The exposed drain pad bonds directly to the inner copper plane to spread heat during sustained fault-current events.
Được đề xuất
Telecom Brick Converters
In isolated 48 V-input telecom brick converters, the BSZ0501NSIATMA1 is typically used on the secondary-side synchronous-rectifier slot following a planar transformer. While the primary-side FETs require 100 V+ ratings, the secondary 12 V rail is well served by a 30 V part with low Rds(on). The OptiMOS 5 family is specifically characterised for secondary-side rectification, with the body-diode reverse-recovery behaviour optimised for >100 kHz operation. Two BSZ0501NSIATMA1 in parallel can deliver 50 A at TA=70C with proper gate-drive symmetry and source-balancing layout.
Được đề xuất
Low-Voltage Motor Drive
For low-voltage brushless DC (BLDC) or brushed DC motor drive in 12-24 V systems, the BSZ0501NSIATMA1 acts as the low-side switch in a half-bridge with a complementary P-channel or N-channel high-side FET. The 40 A TC rating supports motor-startup inrush up to ~80 A peak, while the 30 V rating covers 24 V industrial supplies with derating. PWM frequencies of 20-50 kHz are typical; the OptiMOS 5 gate-charge profile keeps drive losses modest. Use a gate resistor of 10-47 ohm to control ringing on long motor leads.
Được đề xuất
Hot-Swap / In-Rush Protection
The BSZ0501NSIATMA1 is suitable for 12 V hot-swap / in-rush protection slots in servers, network switches, and industrial plug-in cards where it limits inrush current when a board is inserted into a live backplane. The 30 V Vds gives 1.5x margin above 12 V, and the 25 A continuous Id supports typical card load. The exposed drain pad handles the brief dissipation surge during the inrush-limiting phase. Drive the gate from a soft-start controller (such as the BTS70041EPZXUMA1 high-side switch) to ramp the gate voltage slowly and limit di/dt.
Được đề xuất
USB-PD Power Path Switching
In USB-PD source applications where a 5 V / 9 V / 15 V / 20 V bus must be switched or OR-ed, the BSZ0501NSIATMA1 acts as a low-side load switch or as part of an OR-ing network between two PD sources. The 30 V rating covers 20 V PD contracts with margin, and the 25 A continuous Id supports 100 W PD output (20 V / 5 A) with appropriate thermal management. The small footprint permits placement inside the Type-C connector housing on flex PCB, and the central drain pad supports heat-spreading through inner copper layers.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ0501NSIATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSZ031NE2LS5ATMA1 | BSC0501NSIATMA1 | BSC0502NSIATMA1 | BSZ017NE2LS5IATMA1 | BSC028N06NSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Vds (Drain-Source Voltage) | 30 V | 25 V | 30 V | 30 V | 25 V | 60 V |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Product Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Smaller footprint than D2PAK alternatives at same current rating (vsIPD025N06N)
- Lower switching losses than OptiMOS 3 generation at same Rds(on) (vsBSC0901NS (OptiMOS 3))
- 30 V rating optimised for 12 V and 19 V bus applications (vs40 V generic MOSFETs)
Ghi chú thiết kế
The PG-TSDSON-8-FL package dissipates 2.1 W at TA=25C only when soldered to a copper pour of at least 25 mm squared on a 2 oz outer layer with multiple thermal vias to inner planes. Estimated: at TA=70C ambient, expect derating to ~1.2 W continuous (linear from 2.1 W at 25C to 0 W at 150C Tj). Without the recommended copper area, junction temperature will exceed 100C at full 25 A load. For higher dissipation, consider BSC0502NSIATMA1 in the same footprint but with optimised thermal path.
Place the gate-drive resistor (10-47 ohm) within 5 mm of pin 1 to dampen gate-source ringing. The source pins (2, 3, 4, 8) should be tied together with a low-inductance copper pour that returns directly to the gate-driver ground. Estimated: total source inductance above 5 nH will cause overshoot on Vgs and increase switching loss by 10-20% at >500 kHz. Use a Kelvin connection to pin 4 for the gate-driver return path if possible.
Do not exceed the 30 V Vds rating even transiently; inductor kickback in buck converters can overshoot by 20-30% during load-step transients if the snubber is undersized. The body diode of the BSZ0501NSIATMA1 is not optimised for hard commutation above 1 A/dt - in synchronous rectification the FET should always be turned on before the body diode conducts, not relied upon as a freewheeling diode. Always drive Vgs to 10 V for full enhancement; 4.5 V Vgs will leave the FET in the linear region and cause severe heating.
Keep the power loop (drain to inductor to load to source) area to a minimum - estimated inductance should stay below 5 nH for clean switching at 500 kHz. Place input bypass ceramic (22 uF X5R 25V or higher) within 3 mm of the drain pad. Use 4-oz copper or 2-oz with thermal vias on the drain pad for full 25 A continuous current. Paralleled BSZ0501NSIATMA1 devices should share source inductance symmetrically - route each source directly to the sense resistor.
Thông tin tuân thủ
RoHS compliant per Infineon product page; JESD-609 code e3 (matte tin). Not AEC-Q101 qualified - choose an Infineon AEC-Q101 part for automotive designs.
