K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung
MPN: K9MDG08U5M ✓ Hoạt độngK9MDG08U5M Tóm tắt
NAND flash is a non-volatile memory technology organized as an array of pages and blocks, addressed through a multiplexed 8-bit I/O bus with command, address, and data latched sequentially via CLE, ALE, WE, and RE control signals. Within the memory hierarchy, NAND flash sits under the non-volatile memory family alongside NOR flash, and is typically managed by an ECC engine and flash translation layer in a host controller or SSD/eMMC solution.
Key characteristics of the K9MDG08U5M include its large-block MLC organization, x8 multiplexed address/data bus, stacked dual-die construction doubling capacity within the same TSOP1-48 footprint, and an operating voltage range of 2.7 V to 3.6 V per distributor data (Min Voltage 2.7 V, Max Voltage 3.6 V, 48 terminals).
Architecturally, the die uses Samsung MLC large-block NAND technology: pages are programmed sequentially and blocks must be erased before reprogramming. Because MLC cells have tighter read margins than SLC, system designers must implement ECC (for example BCH or LDPC depending on host capability) and wear-leveling firmware to guarantee data retention and endurance over the product lifetime.
Typical applications include USB flash drives, SD and CF memory cards, embedded storage modules, set-top boxes, and industrial data loggers where high density per dollar is the priority.
A key design consideration: MLC NAND tolerates fewer program/erase cycles than SLC, so endurance-critical designs should reserve spare blocks and monitor block wear. Page read and program timing must follow the datasheet tR/tPROG parameters with ready/busy polling via the R/B pin.
This page synthesizes distributor sourcing data, same-family drop-in alternatives such as K9HCG08U1M and K9LBG08U0M, and practical design notes not found in a single manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho K9MDG08U5M — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K9MDG08U5M (cùng hình factor và footprint) — khác nhau ở Package, Organization, Memory Type, Density, Interface.
K9HCG08U1M
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K9LBG08U0M
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K9LCG08U1M
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K9XXG08U0M
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K9XXG08UXM
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K9MDG08U5M Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | MLC Large Block NAND Flash |
| Density | 16 Gbit (2 GB) |
| Tổ chức | 16G x 8 bit |
| Cell Type | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V |
| Supply Voltage Max | 3.6 V |
| Giao diện | Asynchronous x8 multiplexed address/data |
| Hộp | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Terminals | 48 |
| Circuits | 1 |
| Die Configuration | Dual stacked |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | unknown |
Cấu hình chân K9MDG08U5M
| Chân 1 | R/B — Ready/Busy output (open-drain) |
| Chân 2 | RE — Read enable |
| Chân 3 | CE — Chip enable |
| Chân 4 | NC — Not connected (per datasheet) |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | NC — Not connected (per datasheet) |
| Chân 7 | NC — Not connected (per datasheet) |
| Chân 8 | NC — Not connected (per datasheet) |
| Chân 9 | NC — Not connected (per datasheet) |
| Chân 10 | NC — Not connected (per datasheet) |
| Chân 11 | CLE — Command latch enable |
| Chân 12 | ALE — Address latch enable |
| Chân 13 | WE — Write enable |
| Chân 14 | WP — Write protect |
| Chân 15 | NC — Not connected (per datasheet) |
| Chân 16 | NC — Not connected (per datasheet) |
| Chân 17 | NC — Not connected (per datasheet) |
| Chân 18 | NC — Not connected (per datasheet) |
| Chân 19 | NC — Not connected (per datasheet) |
| Chân 20 | NC — Not connected (per datasheet) |
| Chân 21 | NC — Not connected (per datasheet) |
| Chân 22 | NC — Not connected (per datasheet) |
| Chân 23 | VCC — Power supply (2.7 V to 3.6 V) |
| Chân 24 | VCC — Power supply (2.7 V to 3.6 V) |
| Chân 25 | NC — Not connected (per datasheet) |
| Chân 26 | NC — Not connected (per datasheet) |
| Chân 27 | NC — Not connected (per datasheet) |
| Chân 28 | NC — Not connected (per datasheet) |
| Chân 29 | I/O0 — Data input/output bit 0 |
| Chân 30 | I/O1 — Data input/output bit 1 |
| Chân 31 | I/O2 — Data input/output bit 2 |
| Chân 32 | I/O3 — Data input/output bit 3 |
| Chân 33 | VSS — Ground |
| Chân 34 | I/O4 — Data input/output bit 4 |
| Chân 35 | I/O5 — Data input/output bit 5 |
| Chân 36 | I/O6 — Data input/output bit 6 |
| Chân 37 | I/O7 — Data input/output bit 7 (also used for status/ID) |
| Chân 38 | NC — Not connected (per datasheet) |
| Chân 39 | NC — Not connected (per datasheet) |
| Chân 40 | NC — Not connected (per datasheet) |
| Chân 41 | VSS — Ground |
| Chân 42 | VSS — Ground |
| Chân 43 | NC — Not connected (per datasheet) |
| Chân 44 | NC — Not connected (per datasheet) |
| Chân 45 | NC — Not connected (per datasheet) |
| Chân 46 | NC — Not connected (per datasheet) |
| Chân 47 | NC — Not connected (per datasheet) |
| Chân 48 | NC — Not connected (per datasheet) |
Ứng dụng tiêu biểu
K9MDG08U5M phù hợp cho 6 Áp dụngs: USB Flash Drives, SD and CF Memory Cards, Industrial Data Loggers, Set-Top Boxes and Embedded Storage, Firmware and Boot Storage, Consumer Electronics Backup Storage.
USB Flash Drives
The K9MDG08U5M provides 16 Gbit of MLC storage in a compact TSOP1-48 dual-stacked package, giving USB drive makers 2 GB per chip without stacking separate dies on the PCB. Its 2.7 V to 3.6 V single supply matches USB-powered controller rails directly through a 3.3 V LDO. The x8 multiplexed bus interfaces to standard USB NAND controllers with CLE/ALE/WE/RE handshake. The dual-stacked construction halves the number of solder joints versus two single-die packages, improving reliability at equivalent capacity. MLC economics keep the bill of materials competitive for consumer drives, provided the controller implements ECC and wear-leveling appropriate for MLC endurance limits.
Được đề xuất
SD and CF Memory Cards
Memory card controllers pair naturally with the K9MDG08U5M because its 16 Gbit dual-stacked MLC density matches the 2 GB card generation in a single 48-pin TSOP1 footprint (12 mm x 20 mm) that fits card PCB height limits. The 2.7 V to 3.6 V range supports both 3.3 V card operation and dual-voltage controller designs. The asynchronous x8 NAND interface with ready/busy polling via R/B allows card controllers to optimize read-ahead and background erase. Because MLC read margins tighten over life, card firmware should schedule periodic data refresh. Designers should reserve spare blocks from the 2 GB array to sustain capacity after wear-out of defective blocks.
Được đề xuất
Industrial Data Loggers
Veswin distributor data specifies the K9MDG08U5M-PCB0 over -40C to +105C (TA), enabling industrial data loggers deployed outdoors or in machinery enclosures to record sensor histories at 2 GB per chip. The 3.3 V class supply integrates with industrial 3.3 V microcontroller rails, and the WP pin provides write protection during brownout events, protecting log integrity at power failure. MLC endurance is adequate for logging applications where write frequency is moderate and wear-leveling spreads writes evenly. Extended-temperature retention should be verified against Samsung datasheet figures, and power-fail recovery logic should rely on the R/B ready/busy line to abort cleanly mid-page.
Được đề xuất
Set-Top Boxes and Embedded Storage
Set-top box platforms use NAND like the K9MDG08U5M for firmware and PVR storage. Its 16 Gbit capacity comfortably holds bootloader, kernel, and application images with room for recording buffers, while the standard x8 asynchronous interface connects to common SoC NAND controllers without glue logic. The dual-stacked die is transparent to software beyond device-ID-based block addressing, allowing one PCB design to be populated with different densities from the same K9XXG08UXM family (for example K9LBG08U0M or K9HCG08U1M) to create product tiers. Firmware must implement BCH-class ECC because MLC read margins are tighter than SLC, plus bad-block management and boot-block mirroring for field reliability.
Được đề xuất
Firmware and Boot Storage
For embedded boards booting from NAND, the K9MDG08U5M stores bootloader images at low cost with 2 GB available for field-updatable firmware images and settings. Most SoC boot ROMs read the first valid block from NAND using the same command set this device implements (0x00/0x30 read, 0x80/0x10 program, 0x60 erase), so no custom boot code is needed. Dual-stack addressing is handled via standard address cycles. Design practice: mirror the bootloader across two blocks, mark bad blocks in the spare area, and assert WP during power transitions. The 2.7 V to 3.6 V window must be maintained during program operations to guarantee write integrity.
Được đề xuất
Consumer Electronics Backup Storage
Digital photo frames, portable media players, and voice recorders use the K9MDG08U5M as internal backup storage, where 2 GB of MLC NAND covers typical content libraries at minimal cost. The TSOP1-48 dual-stacked package keeps the PCB small for slim enclosures, and its 3.3 V supply operates directly from single-cell Li-ion via a buck/LDO stage. Battery-powered designs benefit from low read-current asynchronous operation; sustained program operations should be budgeted for power consumption estimates. Playback devices tolerate MLC latency because content is buffered in RAM, making the slower tR and tPROG of MLC versus SLC non-critical for this use case.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K9MDG08U5M — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K9HCG08U1M | K9LBG08U0M | K9LCG08U1M | K9XXG08U0M |
|---|---|---|---|---|---|
| Package | 48-pin TSOP1 dual stacked (12 x 20 mm) | 48-pin TSOP1 - same footprint | 48-pin TSOP1 - same footprint | 48-pin TSOP1 - same footprint | 48-pin TSOP1 - same footprint |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Cell Type | MLC (2 bits/cell) | MLC (2 bits/cell) | MLC (2 bits/cell) | MLC (2 bits/cell) | MLC (2 bits/cell) |
| Interface | x8 asynchronous multiplexed | x8 asynchronous multiplexed | x8 asynchronous multiplexed | x8 asynchronous multiplexed | x8 asynchronous multiplexed |
| Device ID / Generation | K9MDG (K9XXG08UXM family) | K9HCG (same family datasheet) | K9LBG (same family datasheet) | K9LCG (adjacent generation) | Series designation |
Bảo phân biệt quan trọng
- Dual-stacked die doubles density per footprint (vsK9LBG08U0M)
- Extended-temperature industrial grade option (vsK9LCG08U1M)
- Same-family pin compatibility for capacity tiering (vsK9HCG08U1M)
Ghi chú thiết kế
Hold VCC within the 2.7 V to 3.6 V window at all times, especially during program and erase operations. Distributor data confirms the 2.7 V min / 3.6 V max range. Add 0.1 uF ceramic decoupling at each VCC pin pair plus 4.7-10 uF bulk near the package, since stacked-die parts draw combined current from both dies during tPROG. Brownout during a program operation corrupts the target page - assert WP low whenever the supervisor detects the supply leaving the valid window, and complete recovery via bad-block checking after power-up.
Never treat this MLC part like SLC: page program must proceed sequentially within a block, partial-page programming is restricted, and read margins require ECC. Read the device ID at boot and configure the flash translation layer for the actual page/block geometry rather than hardcoding, which also makes the design portable across K9HCG08U1M, K9LBG08U0M, and K9LCG08U1M drop-in family parts. Verify the ordering suffix (PCB0 vs PIB0) matches your validated speed grade before release.
Route the 8-bit I/O bus as a matched group with series termination (22-33 ohm) close to the controller to control ringing on the 12 mm x 20 mm TSOP1 stubs. Keep CLE/ALE/WE/RE short and reference a solid ground plane; the R/B pin is open-drain and needs a pull-up (typically 10 kohm) to VCC. Avoid routing I/O lines under the package center where possible, and provide thermal relief vias near VSS pins to handle erase-current spikes from the dual stacked dies.
Thông tin tuân thủ
Compliance status not stated in the provided web data. Verify RoHS/REACH status on the official Samsung product page for the specific ordering suffix (PCB0/PIB0) before design-in.
