K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung
MPN: K4B4G1646E-BYMA ✓ Hoạt động| Số lượng | Giá đơn vị | Phụ |
|---|---|---|
| 1 | $24.5455 | $24,55 |
| 10 | $17.7273 | $177,27 |
| 100 | $15.6818 | $1.568,18 |
| 500 | $15 | $7.500,00 |
| 1.000 | $14.3182 | $14.318,20 |
K4B4G1646E-BYMA Tóm tắt
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, embedded systems, and networking equipment.
Key features include a 4Gb density organized as 256M x 16, a 1.35V power supply (with 1.28V to 1.575V range), a 933 MHz clock frequency, and a typical operating current of 14mA. The device supports auto precharge, asynchronous reset, and dynamic on-chip termination, enhancing performance and ease of use. The FBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646E-BYMA uses Samsung's advanced E-die process technology, providing high-speed operation with low power. It features programmable CAS latency, burst length, and output drive strength, allowing system designers to optimize performance. The device includes a temperature sensor for thermal management and supports on-die termination (ODT) for improved signal quality.
Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, industrial computing systems, and embedded applications requiring high-density, low-power memory. Its 1.35V operation makes it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for optimal operation.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646E-BYMA — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646E-BYMA (cùng hình factor và footprint) — khác nhau ở Package, Supply Voltage, Data Rate, Burst Length, CAS Latency.
Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:
K4B4G1646E-BCNB
✗ Hết hàng
$13.5227 / Đơn vị
Xem tài liệu →K4B4G1646E-BYK000
Liên hệ để biết giá
Xem tài liệu →K4B4G1646E-BCMA
✓ Còn hàng
$3.7734 / Đơn vị
Xem tài liệu →MT41K512M16HA-125
📋 Tham chiếu thay thế (không có trong danh mục)
H5TQ4G63CFR-PBC
📋 Tham chiếu thay thế (không có trong danh mục)
AS4C256M16D3LC-10BCN
📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646E-BYMA Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gb |
| Tổ chức | 256M x 16 |
| Điện áp cung cấp | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | 933 MHz |
| Tốc độ dữ liệu | 1866 Mbps/pin |
| Nhiệt độ hoạt động | 0°C to +95°C |
| Operating Current | 14 mA |
| Standby Current | 2 mA, 3 mA |
| Hộp | FBGA-96 |
| Kiểu lắp đặt | Surface Mount |
| RoHS | Compliant |
| Số lượng chân | 96 |
Cấu hình chân K4B4G1646E-BYMA
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân B1 | VDDQ — DQ power supply |
| Chân B2 | DQ2 — Data input/output 2 |
| Chân B3 | DQ3 — Data input/output 3 |
| Chân B4 | VSSQ — DQ ground |
| Chân C1 | VREFCA — Reference voltage for command/address |
| Chân C2 | A0 — Address input 0 |
| Chân C3 | A1 — Address input 1 |
| Chân C4 | A2 — Address input 2 |
Ứng dụng tiêu biểu
K4B4G1646E-BYMA phù hợp cho 6 Áp dụngs: Laptop Memory Modules, Networking Equipment, Industrial Computing, Embedded Systems, Data Center Servers, Consumer Electronics.
Laptop Memory Modules
The K4B4G1646E-BYMA's 1.35V operation and 4Gb density make it ideal for DDR3L SO-DIMMs in laptops and ultrabooks. Its low power consumption extends battery life, while the 1866 Mbps data rate supports demanding multitasking. The FBGA-96 package allows compact module designs. When used in SO-DIMMs, it pairs with a DDR3L controller and requires careful routing to maintain signal integrity at high speeds.
Được đề xuất
Networking Equipment
In routers and switches, the K4B4G1646E-BYMA provides high-bandwidth packet buffering with low latency. Its 1866 Mbps data rate handles high-throughput traffic, while the 1.35V supply reduces power in always-on equipment. The device's on-die termination and ZQ calibration ensure signal quality on dense PCBs. It is often paired with a network processor and requires proper decoupling for stable operation.
Được đề xuất
Industrial Computing
The K4B4G1646E-BYMA operates over 0°C to +95°C, suitable for industrial PCs and embedded systems. Its 4Gb density supports applications like machine vision and process control. The 1.35V operation reduces heat generation, important in sealed enclosures. The FBGA-96 package withstands vibration, and the device's auto precharge simplifies memory management. It works with industrial-grade controllers and benefits from conformal coating in harsh environments.
Được đề xuất
Embedded Systems
For embedded applications like medical devices and point-of-sale terminals, the K4B4G1646E-BYMA offers a balance of density, speed, and power. Its 4Gb capacity supports complex software, while 1.35V operation is compatible with battery-powered designs. The device's small FBGA-96 footprint saves board space. It is typically used with an application processor and requires careful power sequencing.
Được đề xuất
Data Center Servers
In servers, the K4B4G1646E-BYMA can be used in DDR3L RDIMMs or UDIMMs for cost-effective memory expansion. Its 1866 Mbps speed supports high-bandwidth workloads, and the 1.35V supply reduces power in large memory arrays. The device's E-die technology ensures reliability under continuous operation. It is often paired with server chipsets and requires thermal management in high-density configurations.
Được đề xuất
Consumer Electronics
The K4B4G1646E-BYMA is used in smart TVs, set-top boxes, and gaming consoles for main memory. Its 4Gb density supports HD video streaming and gaming, while 1.35V operation keeps power low. The FBGA-96 package enables slim device designs. It works with SoCs and requires proper ESD protection in consumer environments.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646E-BYMA — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646E-BYK000 | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Samsung E-die process technology (vsMT41K512M16HA-125)
- 1.35V low-power operation (vsH5TQ4G63CFR-PBC)
- Long-term availability from Samsung (vsAS4C256M16D3LC-10BCN)
Ghi chú thiết kế
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within 100 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. Follow the layout guidelines in the Samsung datasheet to minimize crosstalk and signal reflection.
The K4B4G1646E-BYMA requires a stable 1.35V supply with low ripple. Use a dedicated DDR3L power regulator with adequate current capability (at least 1A for a single device). Ensure the VREFCA and VREFDQ voltages are generated from a precision divider and filtered with a 0.1uF capacitor. Power sequencing should follow JEDEC standards: apply VDD before VDDQ, and VDDQ before VREF.
The device operates up to +95°C, but for reliable long-term operation, keep the junction temperature below 85°C. In high-density applications, ensure adequate airflow or use a heatsink. The FBGA-96 package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Calculate power dissipation as VDD * IDD (typical 14mA) plus switching losses.
Thông tin tuân thủ
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
