MT47H64M16HR-3:G - 1Gb DDR2 SDRAM 333MHz | Micron | 84-FBGA
MPN: MT47H64M16HR-3:G ✓ Hoạt độngMT47H64M16HR-3:G Tóm tắt
DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) is a volatile memory technology that transfers data on both the rising and falling edges of the clock, doubling throughput versus single-data-rate SDRAM. DDR2 builds on DDR1 with a 4n-bit prefetch architecture, on-die termination (ODT), and a lower 1.8 V core and I/O voltage, which reduces power versus 2.5 V DDR1. In the memory hierarchy, DDR2 SDRAM sits between the memory controller and the DRAM array, providing the working memory for embedded processors, networking equipment, and legacy computing platforms.
Key features of the MT47H64M16HR-3:G include a 1 Gbit density in a 64M x 16 configuration, 333 MHz clock (667 MT/s data rate), 450 ps access time, 1.7 V to 1.9 V supply voltage, and an 84-FBGA (8 x 12.5 mm) package. The device supports programmable CAS latency (CL=3 for the -3 speed grade), burst lengths of 4 or 8, and sequential or interleaved burst types. The differential data strobe (DQS/DQS#) improves signal integrity at high data rates, while the 4n-bit prefetch architecture enables high bandwidth with a modest internal clock.
The MT47H64M16HR-3:G uses Micron's DDR2 process technology with an on-chip DLL for clock synchronization and ODT for impedance matching. The 8-bank architecture allows concurrent operations across banks, improving effective bandwidth. The 1.8 V SSTL_18 I/O interface is compatible with JEDEC-standard DDR2 memory controllers, and the 84-FBGA package provides a compact footprint for space-constrained embedded designs.
Typical applications include embedded computing platforms, industrial control systems, networking and telecom equipment, legacy computing and server memory upgrades, and test and measurement instrumentation. The 1 Gbit density and 333 MHz speed make it suitable for designs requiring moderate memory capacity with DDR2-era memory controllers.
When designing with this device, ensure proper termination and impedance matching on the DDR2 bus, and verify that the memory controller supports the -3 speed grade (CL=3, 333 MHz). The 1.8 V supply must be well-regulated and decoupled to maintain signal integrity.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single reference for the MT47H64M16HR-3:G DDR2 SDRAM.
Bộ thay thế dễ dàng lắp đặt cho MT47H64M16HR-3:G — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MT47H64M16HR-3 IT:G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT47H64M16HR-3:H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT47H64M16HR-25E:H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT47H64M16HR-3 L:G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4T1G164QF-BCF7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT47H64M16HR-3:G Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR2 SDRAM |
| Kích thước bộ nhớ | 1 Gbit |
| Tổ chức | 64M x 16 (8 Meg x 16 x 8 banks) |
| Clock Frequency | 333 MHz |
| Tốc độ dữ liệu | 667 MT/s (DDR2-667) |
| Access Time | 450 ps |
| Điện áp cung cấp | 1.7 V to 1.9 V |
| I/O Voltage | 1.8 V (SSTL_18-compatible) |
| Giao diện | Parallel |
| Hộp | 84-FBGA (8 x 12.5 mm) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | 0C to +85C (commercial) |
| Latency CAS | CL=3 (-3 speed grade) |
| Burst Length | 4 or 8 |
| Data Strobe | Differential (DQS, DQS#) |
| Prefetch Architecture | 4n-bit |
| Trạng thái RoHS | Compliant |
Cấu hình chân MT47H64M16HR-3:G
| Chân A1 | VDD — Power supply 1.8 V |
| Chân A2 | VSSQ — I/O ground |
| Chân A3 | DQ0 — Data input/output |
| Chân A4 | VDDQ — I/O power supply 1.8 V |
| Chân A5 | DQ2 — Data input/output |
| Chân A6 | VSSQ — I/O ground |
| Chân A7 | DQ4 — Data input/output |
| Chân A8 | VDDQ — I/O power supply 1.8 V |
| Chân A9 | DQ6 — Data input/output |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ1 — Data input/output |
| Chân B3 | VSSQ — I/O ground |
| Chân B4 | DQ3 — Data input/output |
| Chân B5 | VSSQ — I/O ground |
| Chân B6 | DQ5 — Data input/output |
| Chân B7 | VSSQ — I/O ground |
| Chân B8 | DQ7 — Data input/output |
| Chân B9 | VSSQ — I/O ground |
| Chân C1 | VDDQ — I/O power supply 1.8 V |
| Chân C2 | DQS — Data strobe |
| Chân C3 | VSSQ — I/O ground |
| Chân C4 | DQ8 — Data input/output |
| Chân C5 | VDDQ — I/O power supply 1.8 V |
| Chân C6 | DQ10 — Data input/output |
| Chân C7 | VSSQ — I/O ground |
| Chân C8 | DQ12 — Data input/output |
| Chân C9 | VDDQ — I/O power supply 1.8 V |
| Chân D1 | DQS# — Differential data strobe |
| Chân D2 | VSSQ — I/O ground |
| Chân D3 | DQ9 — Data input/output |
| Chân D4 | VSSQ — I/O ground |
| Chân D5 | DQ11 — Data input/output |
| Chân D6 | VSSQ — I/O ground |
| Chân D7 | DQ13 — Data input/output |
| Chân D8 | VSSQ — I/O ground |
| Chân D9 | DQ15 — Data input/output |
| Chân E1 | VDD — Power supply 1.8 V |
| Chân E2 | DQ14 — Data input/output |
| Chân E3 | VDDQ — I/O power supply 1.8 V |
| Chân E4 | LDQS — Lower data strobe |
| Chân E5 | VDDQ — I/O power supply 1.8 V |
| Chân E6 | UDQS — Upper data strobe |
| Chân E7 | VDDQ — I/O power supply 1.8 V |
| Chân E8 | LDQS# — Lower differential data strobe |
| Chân E9 | VDDQ — I/O power supply 1.8 V |
| Chân F1 | VSS — Ground |
| Chân F2 | UDQS# — Upper differential data strobe |
| Chân F3 | VSSQ — I/O ground |
| Chân F4 | VREF — Reference voltage |
| Chân F5 | VSSQ — I/O ground |
| Chân F6 | CK — Clock input |
| Chân F7 | VSSQ — I/O ground |
| Chân F8 | CK# — Differential clock input |
| Chân F9 | VSSQ — I/O ground |
| Chân G1 | VDDQ — I/O power supply 1.8 V |
| Chân G2 | CKE — Clock enable |
| Chân G3 | VDDQ — I/O power supply 1.8 V |
| Chân G4 | A0 — Address input |
| Chân G5 | VDDQ — I/O power supply 1.8 V |
| Chân G6 | A2 — Address input |
| Chân G7 | VDDQ — I/O power supply 1.8 V |
| Chân G8 | A4 — Address input |
| Chân G9 | VDDQ — I/O power supply 1.8 V |
| Chân H1 | VSS — Ground |
| Chân H2 | A1 — Address input |
| Chân H3 | VSSQ — I/O ground |
| Chân H4 | A3 — Address input |
| Chân H5 | VSSQ — I/O ground |
| Chân H6 | A5 — Address input |
| Chân H7 | VSSQ — I/O ground |
| Chân H8 | A6 — Address input |
| Chân H9 | VSSQ — I/O ground |
| Chân J1 | VDD — Power supply 1.8 V |
| Chân J2 | A7 — Address input |
| Chân J3 | VDDQ — I/O power supply 1.8 V |
| Chân J4 | A8 — Address input |
| Chân J5 | VDDQ — I/O power supply 1.8 V |
| Chân J6 | A9 — Address input |
| Chân J7 | VDDQ — I/O power supply 1.8 V |
| Chân J8 | A10 — Address input |
| Chân J9 | VDDQ — I/O power supply 1.8 V |
| Chân K1 | VSS — Ground |
| Chân K2 | BA0 — Bank address input |
| Chân K3 | VSSQ — I/O ground |
| Chân K4 | BA1 — Bank address input |
| Chân K5 | VSSQ — I/O ground |
| Chân K6 | BA2 — Bank address input |
| Chân K7 | VSSQ — I/O ground |
| Chân K8 | A11 — Address input |
| Chân K9 | VSSQ — I/O ground |
| Chân L1 | VDDQ — I/O power supply 1.8 V |
| Chân L2 | A12 — Address input |
| Chân L3 | VDDQ — I/O power supply 1.8 V |
| Chân L4 | CS# — Chip select |
| Chân L5 | VDDQ — I/O power supply 1.8 V |
| Chân L6 | RAS# — Row address strobe |
| Chân L7 | VDDQ — I/O power supply 1.8 V |
| Chân L8 | CAS# — Column address strobe |
| Chân L9 | VDDQ — I/O power supply 1.8 V |
| Chân M1 | VSS — Ground |
| Chân M2 | WE# — Write enable |
| Chân M3 | VSSQ — I/O ground |
| Chân M4 | ODT — On-die termination |
| Chân M5 | VSSQ — I/O ground |
| Chân M6 | NC — Not connected (per datasheet) |
| Chân M7 | VSSQ — I/O ground |
| Chân M8 | NC — Not connected (per datasheet) |
| Chân M9 | VSSQ — I/O ground |
| Chân N1 | VDD — Power supply 1.8 V |
| Chân N2 | VSS — Ground |
| Chân N3 | VDD — Power supply 1.8 V |
| Chân N4 | VSS — Ground |
| Chân N5 | VDD — Power supply 1.8 V |
| Chân N6 | VSS — Ground |
| Chân N7 | VDD — Power supply 1.8 V |
| Chân N8 | VSS — Ground |
| Chân N9 | VDD — Power supply 1.8 V |
Ứng dụng tiêu biểu
MT47H64M16HR-3:G phù hợp cho 6 Áp dụngs: Embedded Computing Platforms, Industrial Control Systems, Networking and Telecom Equipment, Legacy Computing and Server Memory Upgrades, Test and Measurement Instrumentation, Consumer Electronics and Set-Top Boxes.
Embedded Computing Platforms
The MT47H64M16HR-3:G provides 1 Gbit of DDR2 working memory for embedded processors and SoCs that use DDR2 memory controllers. Its 333 MHz clock and 667 MT/s data rate deliver sufficient bandwidth for embedded operating systems, while the 64M x 16 organization matches the 16-bit data bus common on embedded memory controllers. The 1.8 V SSTL_18 interface is directly compatible with JEDEC-standard DDR2 PHYs, and the 84-FBGA package saves board space. Designers should verify that the SoC memory controller supports the -3 speed grade (CL=3) and provide proper ODT and termination on the DDR2 bus to maintain signal integrity at 667 MT/s.
Được đề xuất
Industrial Control Systems
The MT47H64M16HR-3:G is used in industrial control and automation equipment that requires reliable DDR2 memory for program and data storage. Its 1 Gbit density supports control algorithms, data logging, and HMI buffers, while the 333 MHz speed provides adequate bandwidth for real-time control loops. The commercial temperature grade (0C to +85C) suits controlled factory environments; for extended-temperature installations, the MT47H64M16HR-3 IT:G variant is recommended. The 84-FBGA package and 1.8 V supply simplify integration into existing DDR2-based industrial boards, and the JEDEC-standard interface ensures compatibility with common industrial memory controllers.
Được đề xuất
Networking and Telecom Equipment
The MT47H64M16HR-3:G provides packet buffer and routing-table memory for networking and telecom equipment such as routers, switches, and gateways. The 667 MT/s data rate supports line-rate packet processing at moderate throughputs, while the 1 Gbit density accommodates forwarding tables and queue buffers. The differential DQS/DQS# strobes improve signal integrity on the DDR2 bus, which is critical in dense networking PCBs with multiple memory devices. The 1.8 V supply and 84-FBGA package align with standard networking board designs. Designers should ensure adequate decoupling and controlled-impedance routing to meet DDR2 timing margins at 333 MHz.
Được đề xuất
Legacy Computing and Server Memory Upgrades
The MT47H64M16HR-3:G serves as a replacement or upgrade memory device for legacy computing platforms and servers that use DDR2 SDRAM. Its 1 Gbit density and 333 MHz speed match the requirements of DDR2-era memory controllers, enabling repair and maintenance of existing systems. The 64M x 16 organization is compatible with standard DDR2 DIMM and SO-DIMM architectures, and the 84-FBGA package is the industry-standard footprint for DDR2 components. As DDR2 is a legacy technology, availability may be limited; designers should verify stock and consider the MT47H64M16HR-3 IT:G for extended-temperature server environments.
Được đề xuất
Test and Measurement Instrumentation
The MT47H64M16HR-3:G is used in test and measurement instruments for waveform capture, data buffering, and analysis. The 1 Gbit density provides sufficient storage for high-sample-rate acquisition buffers, while the 667 MT/s data rate supports fast data transfer to the instrument processor. The 1.8 V SSTL_18 interface and differential DQS/DQS# strobes maintain signal integrity in mixed-signal instrument designs. The 84-FBGA package allows compact layouts. Designers should pay attention to power supply decoupling and ground plane integrity to minimize noise coupling into sensitive analog measurement circuits.
Được đề xuất
Consumer Electronics and Set-Top Boxes
The MT47H64M16HR-3:G provides system memory for consumer electronics such as set-top boxes, digital TVs, and media players that use DDR2 memory. The 1 Gbit density supports operating systems, video buffers, and application data, while the 333 MHz speed handles standard-definition and moderate high-definition video processing. The 1.8 V supply reduces power versus DDR1, and the 84-FBGA package fits compact consumer PCBs. The commercial temperature grade suits indoor consumer environments. Designers should verify the SoC memory controller compatibility and provide adequate thermal relief for the FBGA package in enclosed consumer devices.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT47H64M16HR-3:G — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT47H64M16HR-3 IT:G | MT47H64M16HR-3:H | MT47H64M16HR-25E:H | K4T1G164QF-BCF7 |
|---|---|---|---|---|---|
| Package | 84-FBGA (8 x 12.5 mm) | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA (8 x 12.5 mm) - same | FBGA-84 - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Organization | 64M x 16 | 64M x 16 | 64M x 16 | 64M x 16 | 64M x 16 |
| Clock Frequency | 333 MHz | 333 MHz | 333 MHz | 400 MHz | 333 MHz |
| Supply Voltage | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V |
| Operating Temperature | 0C to +85C (commercial) | -40C to +85C (industrial) | 0C to +85C (commercial) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| CAS Latency | CL=3 | CL=3 | CL=3 | CL=4 | CL=3 |
| Access Time | 450 ps | 450 ps | 450 ps | 400 ps | 450 ps |
| Data Rate | 667 MT/s | 667 MT/s | 667 MT/s | 800 MT/s | 667 MT/s |
Bảo phân biệt quan trọng
- Commercial temperature grade at lower cost (vsMT47H64M16HR-3 IT:G)
- Standard 333 MHz DDR2-667 speed grade (vsMT47H64M16HR-25E:H)
- Micron DDR2 reliability and JEDEC compliance (vsK4T1G164QF-BCF7)
Ghi chú thiết kế
Route DDR2 data and strobe traces with controlled 50 ohm single-ended impedance and match trace lengths within each byte lane to within +/- 5 mm. The differential DQS/DQS# pairs should be routed as 100 ohm differential pairs with matched intra-pair skew. Keep the DDR2 bus away from sensitive analog or RF traces to avoid coupling. Use a solid ground plane under the DDR2 bus for return current control.
Decouple the 1.8 V VDD and VDDQ supplies with 0.1 uF ceramic capacitors placed as close as possible to each power ball, plus bulk 10 uF capacitors per device. The VREF pin requires a stable reference, typically generated by a resistor divider from VDDQ with a 0.1 uF bypass capacitor. Estimated: at 667 MT/s, the device draws approximately 200-300 mA depending on access patterns; size the regulator accordingly.
Do not exceed the 1.9 V maximum supply voltage, as this can damage the DDR2 SDRAM. Verify that the memory controller supports the -3 speed grade (CL=3, 333 MHz) before designing in this part. The ODT (on-die termination) pin must be properly controlled by the memory controller; incorrect ODT settings cause signal integrity failures at 667 MT/s. For extended-temperature applications, use the MT47H64M16HR-3 IT:G variant.
Thông tin tuân thủ
RoHS compliant per distributor data. Not AEC-Q100 qualified; commercial and industrial temperature grades available. Halogen-free status not confirmed in provided data.
