1EDN7136UXTSA1 vs 2EDN7533RXTMA1 比較

詳細並排比較 1EDN7136UXTSA1 由 Infineon 與 2EDN7533RXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 啟用中

規格比較

參數 1EDN7136UXTSA1 2EDN7533RXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 High-side / Low-side gate driver IC Dual-channel low-side gate driver
Driven Device Type GaN HEMT, N-channel MOSFET —
輸出數量 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
工作溫度範圍 -40 C to +150 C —
封裝 TSNP-6 with exposed pad (PG-VSON-1) PG-TSSOP-8 (HTSSOP) with exposed pad
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
無鹵素 Yes (per Infineon product family convention) —
MSL 等級 [DATA_NEEDED: MSL rating] —
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
工作接面溫度 — -40 C to +150 C

資料表與資源

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