1EDN7146UXTSA1 vs 2EDN7533RXTMA1 比較

詳細並排比較 1EDN7146UXTSA1 由 Infineon 與 2EDN7533RXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中
Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 啟用中

規格比較

參數 1EDN7146UXTSA1 2EDN7533RXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
上升時間 [DATA_NEEDED: typical rise time ns] —
下降時間 [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
工作溫度範圍 -40C to +125C —
封裝 PG-VSON-1 (6-pin with exposed pad) PG-TSSOP-8 (HTSSOP) with exposed pad
安裝類型 Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
功能 — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
工作接面溫度 — -40 C to +150 C

資料表與資源

瀏覽所有產品 建立 BOM 索取報價