2ED21064S06JXUMA1 vs 1EBN1001AEXUMA1 比較
詳細並排比較 2ED21064S06JXUMA1 由 Infineon 與 1EBN1001AEXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ 啟用中規格比較
| 參數 | 2ED21064S06JXUMA1 | 1EBN1001AEXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 功能 | High-Side and Low-Side Gate Driver | — |
| Configuration | Half-Bridge (2 outputs, non-inverting) | High-Side / Low-Side (non-inverting booster) |
| 拓撲 | High-Side, Low-Side with integrated bootstrap diode | — |
| Maximum Offset / Boot Voltage | 650 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typical) | 0.29 A | — |
| Sink Current (typical) | 0.7 A | — |
| Rise Time (typical) | [DATA_NEEDED: rise time] | — |
| Fall Time (typical) | [DATA_NEEDED: fall time] | — |
| Propagation Delay (typical) | 100 ns | — |
| Channel-to-Channel Delay Match | [DATA_NEEDED: channel-to-channel delay match] | — |
| Under-Voltage Lockout | Yes (both channels) | — |
| Bootstrap Diode | Integrated | — |
| Input Logic Compatibility | 3.3 V / 5 V CMOS | — |
| 工作溫度 | -40C to +125C | -40 °C to +125 °C (automotive grade) |
| 封裝 | PG-DSO-14 (14-pin SOIC) | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | ROHS3 Compliant | Compliant |
| Negative Gate Drive Robustness | -0.7 V | — |
| Product Type | — | Isolated single-channel IGBT/MOSFET gate driver booster |
| Series | — | EiceDRIVER™ Boost (1EBN family) |
| 輸出數量 | — | 2 (separate source and sink paths) |
| Peak Output Current | — | ±15 A |
| Number of Drivers | — | 1 |
| Input Signal | — | ASC input, active-clamping disable |
| Active Clamping | — | Yes (very fast reaction time) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Target Switching Stage | — | Motor drives > 10 kW (up to 400 A modules) |