AT45DB041E-SSHN2B-T vs AT45DB041D-SU 比較
詳細並排比較 AT45DB041E-SSHN2B-T 由 Renesas Electronics 與 AT45DB041D-SU 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Renesas Electronics
AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
AT45DB041E-SSHN2B-T ✓ 啟用中
規格比較
| 參數 | AT45DB041E-SSHN2B-T | AT45DB041D-SU |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Non-volatile Flash (DataFlash / NOR) | DataFLASH NOR |
| 記憶體容量 | 4 Mbit (4,194,304 bits) | — |
| 組織 | 2,048 pages x 256 bytes (or 264 bytes binary page mode) | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| 介面類型 | SPI (Modes 0 and 3) / RapidS | — |
| 最大時脈頻率 | 85 MHz | 66 MHz |
| Supply Voltage (Vcc) | 1.65 V to 3.6 V | — |
| 工作溫度 | -40 °C to +85 °C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 8-SOIC (SOIC-N 150 mil) | 8-pin SOIC (150 mil, EIAJ) |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | 256 bytes / 264 bytes | — |
| SRAM Buffers | 2 x 256/264 bytes (dual buffer) | — |
| Sector / Block Erase | Page erase as small as 256 bytes | — |
| Write Protection | Hardware, Software, and Absolute write protection | — |
| Power-on Reset | Yes (integrated) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| RoHS 狀態 | Compliant | Compliant |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| 介面 | — | SPI, RapidS (SPI modes 0 and 3) |
| 供應電壓 | — | 2.7 V to 3.6 V |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Endurance | — | 100,000 program/erase cycles per page |
| Data Retention | — | 20 years minimum |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |