BC817-40-SNR vs BC817-40 比較

詳細並排比較 BC817-40-SNR 由 Nexperia 與 BC817-40 由 Nexperia. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Nexperia
BC817-40-SNR BC817-40-SNR - 45V 500mA NPN Transistor SOT-23 | Nexperia

BC817-40-SNR - 45V 500mA NPN Transistor SOT-23 | Nexperia

BC817-40-SNR ✓ 啟用中

規格比較

參數 BC817-40-SNR BC817-40
品牌 Nexperia Nexperia
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN NPN Bipolar Junction Transistor (BJT)
封裝 SOT-23 (TO-236AB) SOT-23 (TO-236AB), 3 pins
安裝類型 Surface Mount Surface Mount
集極-射極電壓 (Vceo) 45 V 45 V
集極-基極電壓 (Vcbo) 50 V 50 V
射極-基極電壓 (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) 1000 mA [DATA_NEEDED: ICM value]
功率耗散 (Ptot) 250 mW —
轉換頻率 (ft) 100 MHz 100 MHz
DC Current Gain (hFE) 250 to 630 (at VCE=2V, IC=100mA) —
hFE Bin -40 (high gain bin) —
工作溫度 -65 C to +150 C —
Pin Configuration 1-Base, 2-Emitter, 3-Collector (SOT-23 standard) —
RoHS 狀態 Compliant Compliant
MSL 等級 MSL 1 1
Complement (PNP) BC807-40 —
Packaging Suffix /SNR (SOT-23, Tape and Reel, 3000 pcs) —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
工作接面溫度 — -65 C to +150 C
Complementary PNP Part — BC807-40

資料表與資源

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