BSC027N04LSGATMA1 vs BSC0504NSIATMA1 比較

詳細並排比較 BSC027N04LSGATMA1 由 Infineon 與 BSC0504NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC027N04LSGATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
電晶體類型 N-Channel MOSFET N-channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
功率耗散 (TC=25°C) 83 W —
工作溫度範圍 -55°C to +150°C [DATA_NEEDED: operating temperature range]
封裝 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6
安裝類型 Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
MSL 等級 1 —
RoHS 狀態 Compliant unknown
無鹵素 Yes —
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
腳位數 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
閘極臨界電壓 — [DATA_NEEDED: gate threshold voltage]
熱阻 — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

資料表與資源

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