BSC027N10NS5ATMA1 vs BSC146N10LS5ATMA1 比較
詳細並排比較 BSC027N10NS5ATMA1 由 Infineon 與 BSC146N10LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC027N10NS5ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | NRND | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 (logic-level) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 214 W | 52 W |
| 封裝 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj min/max] | -55 C to +150 C (TJ max) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (typ. ~1.7 V) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |