BSC035N04LSGATMA1 vs BSC059N04LSGATMA1 比較
詳細並排比較 BSC035N04LSGATMA1 由 Infineon 與 BSC059N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC035N04LSGATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| RDS(on) Max at VGS=10V | 3.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W | — |
| Power Dissipation (Pd) at Tc=25°C | 69 W | — |
| 工作接面溫度 | -55°C to +150°C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-TDSON-8-1 (8-pin, exposed drain pad) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| 工作溫度範圍 | — | -55 C to +150 C |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |