BSC035N04LSGATMA1 vs BSC059N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC035N04LSGATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active
Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC035N04LSGATMA1 BSC059N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.39
Manufacturer Infineon Technologies β€”
Series OptiMOS 3 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
RDS(on) Max at VGS=10V 3.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) β€”
Power Dissipation (Pd) at Ta=25Β°C 2.5 W β€”
Power Dissipation (Pd) at Tc=25Β°C 69 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Mounting Type Surface Mount Surface Mount
Package PG-TDSON-8-1 (8-pin, exposed drain pad) PG-TDSON-8-5 (SuperSO8 5x6 mm)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Technology β€” OptiMOS 3 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) β€” 73 A
Continuous Drain Current (ID, Ta=25C) β€” 16 A
On-State Resistance RDS(on) max @ VGS=10V β€” 5.9 mOhm
Power Dissipation (Tc=25C) β€” 50 W
Power Dissipation (Ta=25C) β€” 2.5 W
Gate-Source Threshold Voltage VGS(th) β€” 1.2 V to 2.0 V (typ)
Total Gate Charge Qg β€” [DATA_NEEDED: Qg total, typical nC]
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (per JEDEC J-STD-020)
REACH Status β€” Compliant
Channel Type β€” N-Channel

Datasheets & Resources

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